IRLML0030TRPbF Product Data sheet - Beriled

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<strong>IRLML0030TRPbF</strong>Electric Characteristics @ T J = 25°C (unless otherwise specified)Symbol Parameter Min. Typ. Max. Units ConditionsV (BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V V GS = 0V, I D = 250µA∆V (BR)DSS /∆T J Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, I D = 1mAR DS(on) Static Drain-to-Source On-Resistance––– 33 40 V GS = 4.5V, I D = 4.2A dmΩ––– 22 27 V GS = 10V, I D = 5.2A dV GS(th) Gate Threshold Voltage 1.3 1.7 2.3 V V DS = V GS , I D = 25µAI DSS ––– ––– 1V DS =24V, V GS = 0VDrain-to-Source Leakage Current µA––– ––– 150 V DS = 24V, V GS = 0V, T J = 125°CI GSS Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20VnAGate-to-Source Reverse Leakage ––– ––– -100 V GS = -20VR G Internal Gate Resistance ––– 2.3 ––– Ωgfs Forward Transconductance 9.5 ––– ––– S V DS = 10V, I D = 5.2AQ g Total Gate Charge ––– 2.6 ––– I D = 5.2AQ gs Gate-to-Source Charge ––– 0.8 ––– nC V DS =15VQ gd Gate-to-Drain ("Miller") Charge ––– 1.1 ––– V GS = 4.5V dt d(on) Turn-On Delay Time ––– 5.2 ––– V DD =15Vdt r Rise Time ––– 4.4 ––– I D = 1.0Anst d(off) Turn-Off Delay Time ––– 7.4 ––– R G = 6.8Ωt f Fall Time ––– 4.4 ––– V GS = 4.5VC iss Input Capacitance ––– 382 ––– V GS = 0VC oss Output Capacitance ––– 84 ––– pF V DS = 15VC rss Reverse Transfer Capacitance ––– 39 ––– ƒ = 1.0MHzSource - Drain Ratings and CharacteristicsSymbol Parameter Min. Typ. Max. Units ConditionsI SContinuous Source Current––– ––– 1.6MOSFET symbolDI SM(Body Diode)showing theAPulsed Source Currentintegral reverse––– ––– 21GS(Body Diode)Ãcp-n junction diode.V SD Diode Forward Voltage ––– ––– 1.0 V T J = 25°C, I S = 1.6A, V GS = 0V dt rr Reverse Recovery Time ––– 11 17 ns T J = 25°C, V R = 15V, I F =1.6AQ rr Reverse Recovery Charge ––– 4.0 6.0 nC di/dt = 100A/µs d2 www.irf.com
I D , Drain-to-Source Current (A)I D , Drain-to-Source Current (A)R DS(on) , Drain-to-Source On ResistanceI D , Drain-to-Source Current (A)(Normalized)<strong>IRLML0030TRPbF</strong>10010VGSTOP 10.0V8.00V4.50V3.50V3.25V3.00V2.50VBOTTOM 2.25V10010VGSTOP 10.0V8.00V4.50V3.50V3.25V3.00V2.50VBOTTOM 2.25V10.12.25V≤60µs PULSE WIDTH Tj = 25°C0.010.1 1 10 100V DS , Drain-to-Source Voltage (V)12.25V≤60µs PULSE WIDTHTj = 150°C0.10.1 1 10 100V DS , Drain-to-Source Voltage (V)Fig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics100V DS = 15V≤60µs PULSE WIDTH2.0I D = 5.2AV GS = 10V101.51T J = 150°CT J = 25°C1.00.11.5 2.0 2.5 3.0 3.5 4.0V GS , Gate-to-Source Voltage (V)0.5-60 -40 -20 0 20 40 60 80 100 120 140 160T J , Junction Temperature (°C)Fig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. Temperaturewww.irf.com 3
Page 1: V DS 30 VV GS Max ± 20 VPD - 96278
Page 5 and 6: Drain Current (A)I D ,IRLML0030TRPb
Page 7 and 8: Gate threshold Voltage (V)V GS(th)
Page 9 and 10: IRLML0030TRPbFMicro3 Tape & Reel In

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