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CURRICULUM VITAE - UNAM

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31173. Sampsa Riikonen, Isabel Romero, and F. J. García deAbajo, Plasmon tunability in metallodielectric metamaterials,Phys. Rev. B 71, 235104 (2005)174. J Toudert, D Babonneau, S Camelio, T Girardeau, FYubero, J P Espinós and A R Gonzalez-Elipe, Usingion beams to tune the nanostructure and optical responseof co-deposited Ag : BN thin films, J. Phys. D:Appl. Phys. 40, 4614 (2007)175. Sánchez-Valencia, J. R.; Borrás, A.; Barranco, A.; Rico,V. J.; Espinós, J. P.; González-Elipe, A. R. Preilluminationof TiO2 and Ta2O5 Photoactive Thin FilmsAs a Tool to Tailor the Synthesis of Composite Materials,Langmuir 24, 9460 (2008).176. Anghinolfi, L; Moroni, R; Mattera, L; Canepa, M;Bisio, F Flexible Tuning of Shape and Arrangementof Au Nanoparticles in 2-Dimensional Self-OrganizedArrays: Morphology and Plasmonic Response, JOUR-NAL OF PHYSICAL CHEMISTRY C 115 (29): 14036-14043 1 2011177. Lazzari, R., Jupille, J. Quantitative analysis of nanoparticlegrowth through plasmonics, Nanotechnology22 (44), art. no. 445703 2011178. Rico-Garcia, JM; Lopez-Alonso, JM; Aradian, A Toymodel to describe the effect of positional blocklikedisorder in metamaterials composites, JOURNALOF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 29 (1):53-67; JAN 2012179. Taylor, RW; Esteban, R; Mahajan, S; Coulston, R;Scherman, OA; Aizpunia, J; Baumberg, JJ SimpleComposite Dipole Model for the Optical Modesof Strongly-Coupled Plasmonic Nanoparticle Aggregates,JOURNAL OF PHYSICAL CHEMISTRY C, 116(47):25044-25051; 10.1021/jp308986c NOV 29 2012180. Pereira, R.M.S., Pereira, P., Smirnov, G., Vasilevskiy,M.I. Probing spatial correlations in a system of polarizablenanoparticles via measuring its optical extinctionspectrum, 2013, EPL 102 (6) , art. no. 67001Artículo:Theory of electron energy loss for anisotropic systems:application to GaN (1010), R. Esquivel-Sirvent y CeciliaNoguez, Physical Review B 58, 7367 – 7372 (1998).Lo citan: (8):181. Gavrilenko VI, Wu RQ, Energy loss spectra of groupIII nitrides Appl Phys Lett 77, 3042 (2000)182. Djurisic AB, Chan Y, Li EH, Progress in the roomtemperatureoptical functions of semiconductors, MatSci Eng R 38, 237 (2002)183. A.B. Djurisic and E.H. Li, Optical functions of III-V nitrides-Calculations, page 115 in ÏII-Nitride Semiconductors:Optical Properties”, Volume II (OptoelectronicProperities of Semiconductors and Superlattices)by Mahmoud Omar Manasreh ,Taylor and Francisbooks, inc (2002)184. S H Yang, S H Ahn, M S Jeong, K S Nahm, E-K Suh, KY Lim, Structural and optical properties of GaN filmsgrown by the direct reaction of Ga and NH3 in a CVDreactor, Solid-State Electronics, Volume 44, Issue 9, 1September 2000, Pages 1655-1661.185. L. Carmella, G. Onida, C. Hogan, Dielectric Responseand Electron energy loss spectra of an oxidizedSi(100)-(2x2) surface, (2006) Proceedings of the 39course of the international school of solid state physics.186. C Hogan, M Palummo, R Del Sole, Theory of dielectricscreening and electron energy loss spectroscopy atsurfaces, Comptes Rendus Physique 10, 560 (2009)187. Caramella, L; Hogan, C; Onida, G; Del Sole, R Oxidationof dimers at the Si(100) surface studied byfirst-principles simulation of high-resolution EELS,PHYSICA STATUS SOLIDI B-BASIC SOLID STA-TE PHYSICS 247 (8): 1946-1950 AUG 2010188. Hogan, C., Caramella, L., Onida, G. Simulation ofthe oxidation pathway on Si(100) using high-resolutionEELS, (2012) Physica Status Solidi (B) Basic Research,249 (6) pp. 1132-1139.Artículo:Spectroscopic theoretical study of the atomic reconstructionof GaN (1010), Cecilia Noguez, PHYS REV B58, 12641 (1998).Lo citan (8):189. Nahm KS, Yang SH, Ahn SH, Structural and opticalcharacterization of thick GaN films grown by the directreaction of metal Ga and NH3 in CVD reactor, KoreanJ of Chemical Eng, 17, 105 (2000)190. Yang SH, Nahm KS, Hahn YB, Lee YS, Jeong MS, SuhEK, High-temperature vapor-phase growth and characterizationof thick GaN by the direct reaction of Gaand NH3, J of the Korean Phys Society 36, 182 (2000)191. Yang SH, Ahn SH, Jeong MS, Nahm KS, Suh EK,Lim KY Structural and optical properties of GaN filmsgrown by the direct reaction of Ga and NH3 in a CVDreactor Solid-Sate Electronics 44, 1655 (2000)192. Alexandrov D, Excitons of the structure in wurtziteInxGa1-xN and their properties J Cryst Growth 246,325 (2002)193. Di Carlo A Microscopic theory of nanostructured semiconductordevices: beyond the envelope-function approximation,Semicond Sci Tech 18, R1 (2003)194. Velasco VR, Gaggero-Sager LM, Tutor J. Tightbindingcalculation of the electronic band structure ofGaN, AlN and BN (001) ideal surfaces, Surf Sci 529,267 (2003)195. A. Pecchia and A. Di Carlo, Atomistic theory of transportin organic and inorganic nanostructures, Rep.Prog. Phys. 67 1497-1561 (2004).196. N. Ouchani, A. Nougaoui, H. Aynaou, D. Bria, E.H.El Boudouti, V.R. Velasco, A. Daoudi, Acoustic wavesin (110) layered structures, Surface Science, 602 2107(2008)Artículo:Electron energy-loss spectra of non-polar GaN surfacesCecilia Noguez, Physica Status Solidi (a) 175, 57(1999).Lo citan (2):197. Gutierrez-Sosa A, Bangert U, Harvey AJ, Flavell WR,Jacobs K, Moermann I, Rizzi A, Localised near-bandgap studies in nitrides via EELS, in Inst Phys ConfSer (169) 255-258: Microscopy of Semiconducting Materials2001, Editors A.G Cullis, J.L Hutchinson Taylor& Francis (2002).198. Gutierrez-Sosa A, Bangert U, Harvey AJ, Fall CJ, JonesR, Briddon PR, Heggie MI, Band-gap-related energiesof threading dislocations and quantum wells ingroup-III nitride films as derived from electron energyloss spectroscopy, Phys Rev B 66, art. no. 035302(2002)Artículo:Substrate effects on the optical properties of a spheroidalnanoparticle, C. E. Román, Cecilia Noguez, R. G.Barrera Phys Rev B, 61, 10427 (2000).Lo citan (23):199. Lazzari R, Simonsen I, Bedeaux D, et al. Polarizabilityof truncated spheroidal particles supported by a substrate:model and applications Eur Phys J B 24: (2)267-284 NOV 2001200. Dvoynenko, M.M., Goncharenko, A.V., Lozovski, V.Z.,Venger, E.F., Optical spectroscopy of small particlesnear a surface , Proceedings of SPIE - The InternationalSociety for Optical Engineering 938, 41 (2001)

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