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Low loss high definition conductor line in LTCC

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III MEASUREMENT APPROACHIII-1 TEST STRUCTURERF measurements were performed on strip<strong>l<strong>in</strong>e</strong> (embedded <strong>l<strong>in</strong>e</strong>). With this k<strong>in</strong>d of structurethe field is conf<strong>in</strong>ed [5]-[7]. This transmission <strong>l<strong>in</strong>e</strong> is particularly adapted for <strong>conductor</strong> <strong>loss</strong>characterisation [8]. So, it was possible to study the follow<strong>in</strong>g parameter effects on the<strong>conductor</strong> <strong>loss</strong>es: DC electrical resistivity, <strong>l<strong>in</strong>e</strong> edge ripple and dielectric-<strong>conductor</strong> <strong>in</strong>terfaceroughness.70 µmAIR180 µmGroundplane<strong>LTCC</strong>Embedded<strong>l<strong>in</strong>e</strong>180 µmFigure 1: strip<strong>l<strong>in</strong>e</strong> structure used for electrical resistivity, <strong>l<strong>in</strong>e</strong> edge ripple and <strong>in</strong>terfaceroughness, as well as electrical <strong>loss</strong>es characterisation.III-2 DC ELECTRICAL RESISTIVITYThe DC electrical resistivity has a significant impact on RF <strong>loss</strong>es. The <strong>l<strong>in</strong>e</strong> resistivity is givenby ρ = R*(S/L) with R the measured resistance, L the <strong>conductor</strong> length and S the <strong>conductor</strong>cross section area. In order to be <strong>in</strong> a similar configuration to that of a strip<strong>l<strong>in</strong>e</strong>, a buriedmeander <strong>l<strong>in</strong>e</strong> hav<strong>in</strong>g 70 µm width and 25 cm length was <strong>in</strong>cluded <strong>in</strong> the test vehicle. Theresistance was measured us<strong>in</strong>g a <strong>high</strong> accuracy four wire ohmmeter Hy-track 100D.S is the average section area, determ<strong>in</strong>ed by mak<strong>in</strong>g 10 cross sections of the <strong>l<strong>in</strong>e</strong> and us<strong>in</strong>g anappropriated image process<strong>in</strong>g tool to calculate the section area.


III-3 LINE EDGE RIPPLEIn addition to the <strong>conductor</strong> DC electricalresistivity, the non regular shape of the <strong>l<strong>in</strong>e</strong><strong>in</strong>troduces electrical <strong>loss</strong>es <strong>in</strong> RF. Wecalled this phenomenon “<strong>l<strong>in</strong>e</strong> edge ripple”.See fig 2. To quantify the <strong>l<strong>in</strong>e</strong> edge ripple,thirty 70 µm buried <strong>l<strong>in</strong>e</strong>s were <strong>in</strong>cluded.Successive sections of these <strong>l<strong>in</strong>e</strong>s wereperformed to measure the correspond<strong>in</strong>gwidths (W 1 , W 2 , …W i, … Wn). The <strong>l<strong>in</strong>e</strong>edge ripple is def<strong>in</strong>ed as the standarddeviation of Wi.Perfect <strong>l<strong>in</strong>e</strong>TOP VIEWWidth W 1Width W 2...Width W iFigure 2: ideal and real <strong>l<strong>in</strong>e</strong>sL<strong>in</strong>e edge ripple affect<strong>in</strong>gelectrical <strong>loss</strong>esIII-4 INTERFACE ROUGHNESSThe topography of the <strong>in</strong>terface between <strong>conductor</strong> and dielectric also contributes <strong>in</strong> RF<strong>loss</strong>es. Most of EM simulation tools takes <strong>in</strong>to account this parameter. In order to characterisethe topography of the <strong>conductor</strong>-dielectric <strong>in</strong>terface, the quadratic roughness Rq has beenmeasured. S<strong>in</strong>ce the transmission <strong>l<strong>in</strong>e</strong> is buried, the substrates were polished follow<strong>in</strong>g the z-axis down to <strong>in</strong>ternal <strong>conductor</strong>s. Then, the silver <strong>conductor</strong>s were chemically dissolved.Thus, it was possible to really measure the roughness (Rq) with a Talysurf Series, RANKTAYLOR HOBSON. A cut-off of 0.8 mm was used and measures were performed on 8 cutoff(6.4 mm).Internal <strong>l<strong>in</strong>e</strong>Internal <strong>l<strong>in</strong>e</strong> afterpolish<strong>in</strong>gInternal <strong>l<strong>in</strong>e</strong> –dielectric<strong>in</strong>terface after dissolutionFigure 3: Method for roughness measurement of <strong>in</strong>ternal <strong>l<strong>in</strong>e</strong>s.


IV CHARACTERISATION RESULTSIV-1 PHYSICAL CHARACTERISATION RESULTSDC electrical ResistivityStd Adv Photo Solid silverresistivity (10 -8 Ω.m) 2.1 1.8 2.0 1.6The DC electrical resistivity is affected by the glass phase ratio and the gra<strong>in</strong> structure of thepaste. The DC electrical resistivity <strong>in</strong>creases with the glass phase ratio. F<strong>in</strong>er gra<strong>in</strong>s <strong>in</strong>creasethe contact surface and consequently improve the conductivity.Paste gra<strong>in</strong> structureStandard (glass + silver) Advanced (pure silver) Photo-imageable (glass + silver)scale (x 5000) : 2 µmPhoto 1: gra<strong>in</strong> structure of the silver powdersThe advanced paste, which has the best conductivity, conta<strong>in</strong>s pure silver and features thef<strong>in</strong>est gra<strong>in</strong>s. The photo-imageable paste has a similar gra<strong>in</strong> structure but conta<strong>in</strong>s glass phase.Its DC electrical resistivity is 11% <strong>high</strong>er than the advanced one. The standard paste has theworst granulometry and conta<strong>in</strong>s also glass phase. It has the <strong>high</strong>est resistivity: + 17%referr<strong>in</strong>g to the advanced material.L<strong>in</strong>e edge rippleL<strong>in</strong>e edge ripple quantified by thestandard deviation (µm)Std Adv Photo6.43 2.37 2.29


Cross section viewThe smallest <strong>in</strong>terface roughness is obta<strong>in</strong>ed with thephoto-imageable paste while the standard paste givesthe <strong>high</strong>est roughness. The measured values areconsistent with the optical analysis of the cross sections.Photo 3: <strong>conductor</strong>-dielectric <strong>in</strong>terface for the Advanced paste.IV-2 RF CHARACTERISATIONRF measurements were performed with a vector network analyser and two GSG millimeterwavecoplanar probes. Measurements were calibrated with a coplanar SOLT standard kit.0,35Strip<strong>l<strong>in</strong>e</strong> attenuationv. frequency & pastesStdPhotoAttenuation(dB/cm)0,300,250,200,150,10Adv0,051 2 3 4 5 6Frequency(GHz)Figure 4: Attenuation versus frequency for 3 conductive materials.


ATTENUATION (dB/cm)1 GHz 2 GHz 3.5 GHzStd 0.13 0.17 0.24Adv 0.08 0.12 0.18Photo 0.096 0.13 0.2Table 1: Attenuation versus frequency and conductive materials.The measured <strong>loss</strong>es are relatively <strong>high</strong> due to the fact that the characterisation is based on astrip<strong>l<strong>in</strong>e</strong> structure with very f<strong>in</strong>e <strong>l<strong>in</strong>e</strong> (70µm).Over the 1 to 6 GHz frequency range, the two none standard pastes show significantimprovements. Compared to the standard one, the advanced paste reduces RF <strong>loss</strong>es by 29.4%@ 2GHz and the photo-imageable paste reduces RF <strong>loss</strong>es by 23.5% @ 2GHz.IV-3 SYNTHESIS OF PHYSICAL AND RF MEASUREMENTSSome important physical and electrical parameters for <strong>l<strong>in</strong>e</strong> <strong>loss</strong>es were measured:• The DC resistivity gives a measure of the “<strong>in</strong>tr<strong>in</strong>sic” material conductivity.• Accord<strong>in</strong>g to RF current locations, <strong>l<strong>in</strong>e</strong> edge irregularities may have a strong <strong>in</strong>fluence on<strong>l<strong>in</strong>e</strong> <strong>loss</strong>es.• In the upper frequency range, when the sk<strong>in</strong> depth beg<strong>in</strong>s to be very <strong>in</strong>fluential, the<strong>conductor</strong> surface roughness is also a key parameter.These features are summarised <strong>in</strong> the follow<strong>in</strong>g table:Std Adv PhotoResistivity (10 -8 Ω.m) 2.1 1.8 2.0L<strong>in</strong>e edge ripple (µm) 6.43 2.37 2.29Mean Rq (µm) 0.81 0.73 0.63Attenuation (dB/cm @ 2 GHz) 0.17 0.12 0.13Table 2: Measured strip<strong>l<strong>in</strong>e</strong> features.


V ANALYSIS OF RESULTSV-1 ADV AND PHOTO PASTES VERSUS THE STD ONEAs shown <strong>in</strong> table 2, all electrical and physical parameters are most favourable <strong>in</strong> the twonone standard paste case. The most significant difference appears on the <strong>l<strong>in</strong>e</strong> edge ripple.Advanced and photo-imageable materials give far better RF <strong>loss</strong>es <strong>in</strong> comparison with thestandard one. So the <strong>l<strong>in</strong>e</strong> edge ripple seems to be the most sensitive parameter concern<strong>in</strong>g RF<strong>loss</strong>es.V-2 PHOTO VERSUS ADVPhoto-imageable <strong>conductor</strong> RF <strong>loss</strong>es are not as good as expected. The photo-imageableprocess is <strong>in</strong>tended to give very sharp <strong>l<strong>in</strong>e</strong> edges <strong>in</strong> comparison with the screen-pr<strong>in</strong>t<strong>in</strong>gprocess. Nevertheless, <strong>high</strong>-resolution <strong>l<strong>in</strong>e</strong>s achieved with this process suffer from edgedeformations <strong>in</strong>troduced dur<strong>in</strong>g the lam<strong>in</strong>at<strong>in</strong>g phase. In fact, photo-imageable <strong>l<strong>in</strong>e</strong> edges areonly slightly better than the advanced one.The <strong>in</strong>terface roughness is better for the photo-imageable process as well. Neither thisparameter can expla<strong>in</strong> the RF <strong>loss</strong>es difference.The rema<strong>in</strong><strong>in</strong>g advantage of the advanced material is the DC resistivity. Table 3 shows howRF <strong>loss</strong>es <strong>in</strong>crease with 10% more resistivity.10 % resistivity <strong>in</strong>creaseLoss <strong>in</strong>creaseFreq(GHz)v.frequency1 2.4 %4 1.9 %10 1.5 %Table 3: Result on strip<strong>l<strong>in</strong>e</strong> simulation. Loss <strong>in</strong>crease versus frequency for 10 % resistivity<strong>in</strong>crease.


As shown on table 3, the resistivity difference alone cannot expla<strong>in</strong> the RF <strong>loss</strong> differencebetween advanced paste and photo (+10 % measured at 2 GHz). This conclusion opens thequestion on the impact of other parameters on RF <strong>loss</strong>es. We th<strong>in</strong>k the glass phase <strong>in</strong>cluded <strong>in</strong>the photo-imageable paste may have a significant <strong>in</strong>fluence on the RF performance. Indeedthe diffusion of glass first occurs on the <strong>conductor</strong>-dielectric <strong>in</strong>terface. As the frequency<strong>in</strong>creases, the sk<strong>in</strong> depth decreases. Therefore, a larger fraction of the total current is disturbedby the <strong>in</strong>terface roughness and could be disturbed by the glass phase as well. Further analysesare necessary to study <strong>in</strong> details the impact of this glass phase.VI CONCLUSIONThis study demonstrated that the direct screen pr<strong>in</strong>t<strong>in</strong>g process with an advanced paste allowto produce <strong>conductor</strong> <strong>l<strong>in</strong>e</strong>s featur<strong>in</strong>g:• 70µm ± 10µm width,• <strong>l<strong>in</strong>e</strong> edge ripple similar to the photo-imageable process one,• better DC electrical resistivity,• significant reduction of RF <strong>loss</strong>es: 0.12dB/cm @ 2GHz compared to 0.17dB/cm forstandard paste.Moreover, <strong>in</strong> order to study the correlation between physical parameters and RF properties, anew methodology was established allow<strong>in</strong>g to characterise the DC electrical resistivity, the<strong>in</strong>terface roughness and the edge ripple of <strong>conductor</strong> <strong>l<strong>in</strong>e</strong>s.The <strong>l<strong>in</strong>e</strong> edge ripple appears to have the most significant impact on RF <strong>loss</strong>es <strong>in</strong> the 1 to 6GHz range.The considered physical parameters do not allow to fully expla<strong>in</strong> the less good RFperformance of the photo-imageable process. The glass phase <strong>in</strong>cluded <strong>in</strong> the photoimageablepaste may have a significant impact. Further work is planned to verify thisassumption.


REFERENCES[1] R. K. Hoffmann. Handbook of Microwave Integrated Circuits. Norwood, MA; ArtechHouise, 1987.[2] K. C. Gupta, R. Garg and L. J. Babi, Microstrip L<strong>in</strong>es and Slot<strong>l<strong>in</strong>e</strong>s. Norwod, MA; ArtechhOuse, p 51, 1979.[3] J. R. Brews, Transmission <strong>l<strong>in</strong>e</strong> models for <strong>loss</strong>y waveguide <strong>in</strong>terconnections <strong>in</strong> VLSI,IEEE Trans. Electron Devices, vol. ED-33, pp 1356-1365, Sept. 1986.[4] T. C. Edwards, Foundations for Microstrip Circuit Design, New York; Wiley, 1981.[5] C.L. Holloway and E. F. Kuester, Power Loss associated with Conduct<strong>in</strong>g andsuperconduct<strong>in</strong>g rough <strong>in</strong>teraces, IEE tarns. On microwave theory and tech., vol.48,n°10,Oct.2000.[6] M. E. Goldfarb and A. Platzer, Losses <strong>in</strong> GaAs microstrip, IEEE Trans. On microwavetheory and tech., vol 38, n°12, dec.1990[7] P. Troughton; Measurement techniques <strong>in</strong> microstrip, Electronics letters, vol 5, n°2, jan.1969[8] L. Chai and M. Janezic and al., Characerization of <strong>LTCC</strong> material system at microwavefrequencies, IMAPS 2001.

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