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ION MODULATED ORGANIC TRANSISTORS - Doria

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Nikolai KaihovirtaBIBLIOGRAPHY[30] J. D. Yuen, A. S. Dhoot, E. B. Namdas, N. E. Coates, M. Heeney, I.McCulloch, D. Moses, A. J. Heeger. Electrochemical Doping inElectrolyte-Gated Polymer Transistors. J. Am. Chem. Soc. 129, 14367-14371 (2007).[31] J. Lee, L. G. Kaake, J. H. Cho, X.-Y. Zhu, T. P. Lodge, C. D. Frisbie.Ion Gel-Gated Polymer Thin-Film Transistors: OperatingMechanism and Characterization of Gate Dielectric Capacitance,Switching Speed, and Stability. J. Phys. Chem. C 113, 8972-8981(2009).[32] E. Said, X. Crispin, L. Herlogsson, S. Elhag, N. D. Robinson, M.Berggren. Polymer field-effect transistor gated via apoly(styrenesulfonic acid) thin film. Appl. Phys. Lett. 89, 143507(2006).[33] E. W. Paul, A. J. Ricco, M. S. Wrighton. Resistance of PolyanilineFilms as a Function of Electrochemical Potential and the Fabricationof Polyaniline-Base Microelectronic Devices. J. Phys. Chem. 89, 1441-1447 (1985).[34] J. W. Thackeray, H. S. White, M. S. Wrighton. Poly(3-methylthiophene)-Coated Electrodes: Optical and ElectricalProperties as a Function of Redox Potential and Amplification ofElectrical and Chemical Signals Using Poly(3-methylthiophene)-Based Microelectrochemical Transistors. J. Phys. Chem. 89, 5133-5140(1985).[35] S. Chao, M. S. Wrighton. Solid-State Microelectrochemistry:Electrical Characteristics of a Solid-State MicroelectrochemicalTransistor Based on Poly(3-methylthiophene). J. Am. Chem. Soc. 109,2197-2199 (1987).[36] S. Chao, M. S. Wrighton. Characterization of a ”Solid-State”Polyaniline-Base Transistor: Water Vapor Dependent Characteristicsof a Device Employing a Poly(vinyl alcohol)/Phosphoric AcidSolid-State Electrolyte. J. Am. Chem. Soc. 109, 6627-6631 (1987).[37] D. Ofer, R. M. Crooks, M. S. Wrighton. Potential Dependence of theConductivity of Highly Oxidized Polythiophenes, Polypyrroles, andPolyaniline: Finite Windows of High Conductivity. J. Am. Chem. Soc.112, 7869-7879 (1990).52

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