DIODE / THYRISTOR MODULE - Datasheets.pl

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MDS35THERMAL RESISTANCESSymbol Parameter Value UnitRth (j-c) DC Junction to case for DC 1 °C/WRth (c-h) Contact (case to heatsink) (4) 0.05 °C/W(4) With contact grease utilisationGATE CHARACTERISTICS (maximum values)PGM =50W(tp=20µs) PG (AV)= 1W IFGM = 4 A (tp = 20 µs) VRGM = 5V.ELECTRICAL CHARACTERISTICS (SCR)Symbol Test Conditions Value UnitIGT VD=12V (DC) RL=33Ω Tj=25°C MAX 50 mAVGT VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 VVGD VD=VDRM RL=3.3kΩ Tj=125°C MIN 0.2 Vtgt VD=VDRM IG = 500mAdI G /dt = 3A/µsTj=25°C TYP 2 µsI L I G =1.2 I GT Tj=25°C TYP 60 mAMAX 120I H I T = 0.5A gate open Tj=25°C TYP 40 mAMAX 80V TM I TM = 80A tp= 380µs Tj=25°C MAX 1.7 VI DRMIRRMV DRMVRRMRatedRatedTj=25°C MAX 0.05 mATj=125°C MAX 10tq I T = 80A V R =75V V D =67%V DRMdI/dt=30A/µs dV/dt=20V/µs Gate openTj=125°C TYP 100 µsdV/dt *Linear slope up to VD=67%VDRMgate openTj=125°C MIN 500 V/µs* For higher guaranteed values, <strong>pl</strong>ease consult us.ELECTRICAL CHARACTERISTICS (<strong>DIODE</strong>)Symbol Test Conditions Value UnitVF IF=80A Tj=25°C 1.7 VIR VR=VRRM Tj=125°C 10 mATj=25°C 50 µA2/7
Fig. 1 : Maximun Average Power dissipation versusaverage on-state current.(Sinusoidal waveform : Thyristor or Diode)MDS35Fig. 2 : Correlation between maximum average powerdissipation and maximum allowable temperature (Tamb)for different thermal resistances heatsink + contact.(Sinusoidal waveform : Thyristor or Diode)P(av)(W)P(av)(W)=180 o=30 o =60 o =90 o =180 o=120 oRth(c- a)=1.00oC/MRth(c-a)=1.25oC/WoRth(c-a)=0.75 C/WoRth(c-a)=O.50 C/WRth(c.a)=0oC/WIT,IF(av)(A)oTamb( C)Fig. 3 : Maximum average power dissipation versusaverage on-state current.(Rectangular waveform : Thyristor or Diode)Fig.4 : Correlation between maximum average powerdissipation and maximum allowable temperature (Tamb)for different thermal resistances heatsink + contact.(Rectangular waveform : Thyristor or Diode)P(av)(W)=60o =90 o =120o o=180o=30DCI T,IF(av)(A)Fig.5 : Maximum total power dissipation versus outputcurrent on resistive or inductive load.(Single phase bridge rectifier : 2 packages MDS35)Fig. 6 : Correlation between maximum total averagepower dissipation and maximum ambiant allowabletemperature for different thermal resistances heatsink +contact.(Single phase bridge rectifier : 2 packages : MDS35)Ptot.(W)160o=180RESISTIVELOADINDU CTIVELOAD14012010080oRth(c.a)=0 C/WRth(c-a)=O.25oC/WRth(c-a)=0.5 oC/WRth(c-a)=1.0oC/W60Ioutput(A)40 Rth(c-a)=O.75oC/W20Tamb( oC)00 10 30 50 70 90 110 1303/7
Page 1: MDS35DIODE / THYRISTOR MODULE. V DR
Page 5 and 6: Fig.13 : Non repetitive surge peak
Page 7: MDS35Information furnished is belie

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