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Tachyon DDL & Tachyon DPT

Data Sheet (.pdf) - Brion Technologies, Inc.

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<strong>Tachyon</strong> <strong>DDL</strong> & <strong>Tachyon</strong> <strong>DPT</strong><br />

Description<br />

<strong>Tachyon</strong> <strong>DDL</strong> & <strong>Tachyon</strong> <strong>DPT</strong> offer comprehensive low-k 1<br />

computational lithography solutions.<br />

As the semiconductor industry enters the ultra low-k 1<br />

era,<br />

strong resolution enhancement technology (RET) techniques<br />

such as Double Dipole Lithography (<strong>DDL</strong>) and Double<br />

Patterning Technology (<strong>DPT</strong>) are required to continue along<br />

the path of Moore’s Law. Built on <strong>Tachyon</strong>’s high performance<br />

computing platform, <strong>Tachyon</strong> <strong>DDL</strong> and <strong>Tachyon</strong> <strong>DPT</strong>, along<br />

with <strong>Tachyon</strong> OPC+ and <strong>Tachyon</strong> LMC, deliver complete<br />

and production-worthy end-to-end solutions for the low-k 1<br />

computational lithography needs of sub-28 nanometers (nm)<br />

and below devices.<br />

Key Benefits<br />

High performance architecture<br />

<strong>Tachyon</strong> <strong>DDL</strong> and <strong>Tachyon</strong> <strong>DPT</strong> are built on the highly<br />

successful <strong>Tachyon</strong> platform, with proven image-based<br />

computing and focus-exposure modeling (FEM). <strong>Tachyon</strong>’s<br />

industry-leading high performance platform enables fast and<br />

efficient implementation of computationally intensive <strong>DDL</strong><br />

and <strong>DPT</strong> for full-chip advanced logic and memory applications<br />

for sub-28 nm process generations. <strong>Tachyon</strong> <strong>DDL</strong> and<br />

<strong>Tachyon</strong> <strong>DPT</strong> are a complete solution suite for the<br />

production-worthy implementation of <strong>DDL</strong> and <strong>DPT</strong><br />

technology, delivering ultrahigh capacity, fast turnaround<br />

time, and industry-leading accuracy.<br />

Full model-based solution<br />

<strong>Tachyon</strong> <strong>DDL</strong> and <strong>Tachyon</strong> <strong>DPT</strong> use patented model-based<br />

approaches throughout the flow to replace steps that<br />

conventionally would have been rule-based decomposition<br />

method. Accurate model simulations are conducted from<br />

design horizontal and vertical conversion, shielding generation,<br />

optical proximity correction (OPC), mask rule compliance<br />

(MRC) to pattern stitching, delivering the most robust<br />

solutions in one integrated step, thereby eliminating any<br />

guesswork and manual iterations. <strong>Tachyon</strong> <strong>DDL</strong> and<br />

<strong>Tachyon</strong> <strong>DPT</strong> are enabled by highly accurate focusexposure<br />

models and separate etch models.<br />

Leading-edge technology<br />

<strong>Tachyon</strong> <strong>DDL</strong> based on ASML’s patented Double Dipole Lithography<br />

technology which improves resolution while reducing<br />

manufacturing cost. The technology can be applied to different<br />

patterning needs, including logic and memory designs, for both<br />

front-end and back-end processes.<br />

<strong>Tachyon</strong> <strong>DDL</strong> also supports generic double exposure techniques<br />

in which a design is split into two masks that are optimized to<br />

their respective imaging conditions to yield the best possible<br />

process window.<br />

<strong>Tachyon</strong> <strong>DPT</strong> uses innovative algorithms and proprietary methods<br />

to deliver full-chip global coloring, pitch-aware decomposition,<br />

gate and overlay-aware pattern split, stitching, and pattern<br />

density balance. It has a built-in capability to flag native conflicts,<br />

allowing customers to build on their design for manufacturing<br />

(DFM) framework. <strong>Tachyon</strong> <strong>DPT</strong> supports all process technologies<br />

including photo freeze, litho-etch-litho-etch, and spacer<br />

techniques, and supports both positive tone and negative<br />

tone processes.<br />

High quality output<br />

<strong>Tachyon</strong> <strong>DDL</strong> and <strong>Tachyon</strong> <strong>DPT</strong> co-optimize critical quality<br />

metrics including critical dimension (CD) control, mask<br />

error enhancement factors (MEEF), and overlay error<br />

tolerance throughout the entire flow, while carefully<br />

maintaining the mask manufacturing constraints. The<br />

results are reliable production-quality mask designs with<br />

high accuracy and through-process window robustness.<br />

Ready to be deployed<br />

<strong>Tachyon</strong> <strong>DDL</strong> and <strong>Tachyon</strong> <strong>DPT</strong> are complete end to-end<br />

solutions that convert any full-chip design into manufacturable<br />

mask layouts. The resulting output data is ready for <strong>Tachyon</strong><br />

LMC (Lithography Manufacturability Check), fracturing and<br />

mask data preparation. Together with <strong>Tachyon</strong> SMO (Source<br />

Mask Optimization), which optimizes the imaging conditions<br />

for each of the masks, <strong>Tachyon</strong> <strong>DDL</strong> and <strong>Tachyon</strong> <strong>DPT</strong><br />

provide users with a complete, production-worthy computational<br />

lithography optimization suite to provide a cost effective<br />

low-k 1<br />

solution.<br />

Process Window & Process Control


Litho-etch<br />

M1 example:<br />

k 1<br />

= 0.31<br />

NA=1.2<br />

35 DX+DYX,Y<br />

polarization<br />

Litho-etch<br />

Poly example:<br />

k 1<br />

= 0.3<br />

NA=0.93<br />

NA, sigma out/sigma in=0.95/0.71,<br />

60 DX+DY, X,Y<br />

polarization<br />

<strong>Tachyon</strong> <strong>DDL</strong> uses model simulations and innovative algorithms to automatically decompose the design into two optimal masks which provide the best<br />

final image quality and process window robustness. The technique can be applied to both logic and memory style designs to achieve k 1<br />

< 0.3 imaging.<br />

<strong>Tachyon</strong> <strong>DPT</strong> performs global coloring,<br />

pattern split, model-based stitching<br />

compensation, SRAF placement, and<br />

model-based OPC all in one integrated flow,<br />

reducing the development and computational<br />

cost of implementing the technology.<br />

Process Window & Process Control


Functions and Features<br />

Double exposure lithography implementation<br />

• Supports ASML-patented double dipole<br />

lithography technology<br />

• Supports generic double exposure<br />

lithography technology<br />

• Complete model-based full-chip pattern decomposition<br />

• Source polarization for contrast improvement<br />

• Process window optimized SRAF placement and<br />

guaranteed SRAF non-printability<br />

• Binary,attenuated phase shift, and tri-tone masks<br />

• Simultaneous shielding and OPC optimization on<br />

two masks<br />

• Co-optimized shielding for optimal ILS and side<br />

lobe margin<br />

• Intelligent ripple control for complex 2D structures<br />

• Production proven<br />

Double patterning technology implementation<br />

• Full-chip Litho-<strong>DPT</strong> and Spacer-<strong>DPT</strong><br />

• Efficient full-chip global coloring without coloring<br />

conflict propagation<br />

• Programmable geometry specific coloring<br />

• Gate-aware pattern split<br />

• Pitch-aware coloring<br />

• Model-based and rule-based stitching compensation<br />

• Overlay error tolerant and MEEF-aware<br />

stitching compensation<br />

• Process window model-based OPC with resist and/or<br />

etch model<br />

• Automatic density balancing for contact Litho-<strong>DPT</strong><br />

• Native conflict identification and conflict loop analysis<br />

• Native conflict resolution for cell optimization<br />

• Supports positive tone and negative tone <strong>DPT</strong> processes<br />

Red: Pinching without overlay aware stitching<br />

Blue: Optimal contour with overlay aware stitching<br />

5 nm x overlay error 5 nm x and 5 nm overlay error<br />

Without proper overlay error tolerance stitching, small overlay errors<br />

combined with a slight defocus could result in serious pinching, thereby<br />

killing the device yield.<br />

split/stitch<br />

Production-ready quality<br />

• Process window-aware correction<br />

• Built-in MRC for output masks<br />

Efficiency and cycle time performance<br />

• Fully integrated (single step) flow on a common platform<br />

• Fully distributed layout decomposition and modelbased<br />

OPC<br />

• Hierarchical support for higher throughput<br />

• Built-in innovative algorithms for optimal cycle<br />

time performance<br />

Flexibility and ease of use<br />

• Full model-based approach that requires no fine tuning<br />

and maintaining of complex rules<br />

• Complete ready-to-use, built-in algorithms and optimal<br />

mask designs for robust process window<br />

• Fully parameterized user input and script-driven flow<br />

• Programmable customization via easy scripting to meet<br />

users’ special needs<br />

<strong>Tachyon</strong> <strong>DPT</strong> employs overlay error tolerance model-based stitching error<br />

compensation. The resulting design is free of overlay error induced issues under<br />

normal manufacturing conditions.<br />

Process Window & Process Control


22 nm<br />

NA=1.35<br />

sigma out/sigma in=0.77/0.97<br />

60 DX+DY<br />

Regular <strong>DDL</strong> Split and OPC<br />

<strong>DDL</strong> with Intelligent Ripple Control<br />

<strong>Tachyon</strong> <strong>DDL</strong>’s model-based shielding and intelligent ripple control overcomes the difficulty with the traditional rule-based splitting method to control<br />

the ripples in complex 2D structures<br />

<strong>DPT</strong><br />

SPT split<br />

Model-based<br />

OPC with<br />

overlay aware<br />

stitching<br />

<strong>Tachyon</strong><br />

LMC<br />

<strong>Tachyon</strong> <strong>DPT</strong> together <strong>Tachyon</strong> OPC+ and <strong>Tachyon</strong> LMC provides a complete spacer double patterning flow from mask split, mask correction,<br />

and overlay aware verification<br />

© 2010 Brion Technologies, Inc. All rights reserved.<br />

Brion Technologies, Inc. • Phone: +1 (408) 653-1500 • Email: info@brion.com • brion.com<br />

Process Window & Process Control

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