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Selecting eGaN® FET Optimal On-Resistance - EPC

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WHITE PAPER: WP011<br />

Selecting eGaN® FET Optimal On-Resistance<br />

Note that not all devices will have all these loss components, e.g. a synchronous buck converter would have practically no turn-on or turn-off losses in the synchronous<br />

rectifier. Furthermore, to optimize multiple devices in a converter, the losses stemming from the interaction between devices also need to be considered (e.g.<br />

the diode reverse recovery losses of one device may be dissipated in another FET. This occurs in circuits such as synchronous buck converters where synchronous FET<br />

related losses are dissipated in the control FET, but by optimizing the control FET only, this loss component will remain unchanged. Thus for optimization purposes,<br />

this issue is resolved by considering all the losses induced by a device to be relevant for its sizing, regardless of where the power is dissipated.<br />

Die Size Optimization<br />

By considering each of these device loss components in eq. (1) in turn, some conclusions can be drawn:<br />

• The conduction losses (item 1) are frequency independent<br />

• Commutation loss (items 2a and 2b) are both frequency and load current dependent and can be combined as follows:<br />

where:<br />

k k ON<br />

+ k OFF<br />

P<br />

k<br />

= ON<br />

V<br />

2<br />

RG<br />

=<br />

V − V<br />

BUS<br />

COMM<br />

= k ⋅QSW , A<br />

DR<br />

PL<br />

⋅ A⋅<br />

I<br />

R<br />

L<br />

⋅ f<br />

SW<br />

G<br />

k<br />

OFF<br />

= and Q<br />

SW, A<br />

= QGD,<br />

A<br />

+ QGS2, A<br />

VPL<br />

(2)<br />

• Loss components in items 3, 4 and 5 are all frequency dependent, but current independent and can be combined. While Q RR<br />

is current related, MOSFET vendors<br />

neglect to present their characteristic adequately over current, temperature and di/dt to accurately calculate these losses:<br />

(<br />

Q<br />

)<br />

2<br />

OSS,<br />

A<br />

P<br />

CHARGE<br />

= ⋅ VBUS<br />

+ Q<br />

G,A<br />

⋅ VDR<br />

+ QRR<br />

A<br />

⋅ VBUS<br />

⋅ A⋅<br />

f<br />

,<br />

SW<br />

(3)<br />

• Diode losses, item 6, are assumed die size independent (only a weak function of die size) and neglected for the optimization process.<br />

If we now define two new variables ΔI EQ<br />

and ΔI EQRR<br />

as:<br />

∆I<br />

EQ<br />

Q<br />

=<br />

OSS , A<br />

⋅ VBUS<br />

+ 2<br />

V<br />

BUS<br />

⋅ Q<br />

⋅ k ⋅ Q<br />

G,A<br />

SW,<br />

A<br />

⋅ V<br />

DR<br />

(4a)<br />

∆I<br />

EQRR<br />

=<br />

2 ⋅ Q<br />

k ⋅ Q<br />

RR,<br />

A<br />

SW , A<br />

(4b)<br />

Then combining eq. (2) and eq. (3) and substituting eq. (4a) and (4b), the <strong>switching</strong> losses are:<br />

P<br />

SW<br />

=<br />

=<br />

=<br />

[<br />

V<br />

(<br />

Q<br />

k ⋅ Q ⋅ I +<br />

2<br />

2<br />

⋅ V + Q ⋅ V + Q<br />

)]<br />

⋅ V<br />

[<br />

V<br />

V<br />

k ⋅ Q ⋅ I +<br />

2<br />

2<br />

k ⋅ Q ⋅ ( ∆I<br />

+ ∆I<br />

)]<br />

⋅ A⋅<br />

f<br />

[<br />

V<br />

2<br />

k ⋅ Q<br />

]<br />

⋅ ( I + ∆I<br />

+ ∆I<br />

) ⋅ f ⋅ A<br />

= P<br />

BUS<br />

BUS<br />

BUS<br />

SW,<br />

A<br />

⋅ A<br />

SW,<br />

A<br />

SW,<br />

A<br />

SW , A<br />

L<br />

L<br />

L<br />

OSS,<br />

A<br />

BUS<br />

EQ<br />

BUS<br />

SW,<br />

A<br />

EQRR<br />

G,A<br />

EQ<br />

SW<br />

DR<br />

EQRR<br />

RR,<br />

A<br />

BUS<br />

SW<br />

⋅ A ⋅<br />

f<br />

SW<br />

(5)<br />

EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 | | PAGE 2

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