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Supplement Annual Report 2005 - Helmholtz-Zentrum Berlin

Supplement Annual Report 2005 - Helmholtz-Zentrum Berlin

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HMI Publications<br />

Rau B. ; Petter K. ; Brehme S. ; Sieber I. ; Stöger-Pollach M. ; Schattschneider P. ; Lips K. ; Gall S. ; Fuhs W.<br />

Low-temperature epitaxy for thin-film silicon solar cells by ECRCVD - structural and electronic<br />

properties<br />

In: Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - <strong>2005</strong> : Coronado Springs<br />

Resort, Lake Buena Vista, FL, January 3 - 7, <strong>2005</strong><br />

IEEE Operations Center, Piscataway, NJ, <strong>2005</strong>, 1123 - 1126<br />

Rau B. ; Schneider J. ; Conrad E. ; Gall S. ; Fuhs W.<br />

Polycrystalline Si thin-film solar cells with absorber layers grown at temperatures below 600°C by<br />

ECRCVD<br />

In: Technical digest / 15th International Photovoltaic Science and Engineering Conference (PVSEC-15) :<br />

October 10 - 15, <strong>2005</strong>, Shanghai, China<br />

Shanghai Jiao Tong Univ., Shanghai, <strong>2005</strong>, 778 - 779<br />

Saleh R. ; Nickel N.H.<br />

Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films<br />

Surface & Coatings Technology<br />

198 (<strong>2005</strong>) 143 - 147<br />

Saleh R. ; Nickel N.H. ; Maydell K.V.<br />

Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films<br />

Thin Solid Films<br />

487 (<strong>2005</strong>) 89 - 92<br />

Schneider J. ; Heimburger R. ; Klein J. ; Muske M. ; Gall S. ; Fuhs W.<br />

Aluminum-induced crystallization of amorphous silicon: Influence of temperature profiles<br />

Thin Solid Films<br />

487 (<strong>2005</strong>) 107 - 112<br />

Schneider J. ; Klein J. ; Muske M. ; Gall S. ; Fuhs W.<br />

Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si<br />

Applied Physics Letters<br />

87 (<strong>2005</strong>) 031905/1 - 3<br />

Schneider J. ; Klein J. ; Sarikov A. ; Muske M. ; Gall S. ; Fuhs W.<br />

Suppression of nucleation during the aluminum-induced layer exchange process<br />

In: Amorphous and nanacrystalline silicon science and technology - <strong>2005</strong> : symposium held March 28 - April<br />

1, <strong>2005</strong>, San Francisco, California, U.S.A.<br />

MRS, Warrendale, Pa., <strong>2005</strong>, A2.2.1 - A2.2.6<br />

Stöger-Pollach M. ; Walter T. ; Eyidi D. ; Schneider J. ; Gall S.<br />

The role of an alumina membrane and its phase transformations during the layer exchange process<br />

In: Proceedings / Microscopy conference <strong>2005</strong> ; 6. Dreiländertagung : August 28 - September 2, <strong>2005</strong>, Davos<br />

<strong>2005</strong>, 86<br />

Wang Y. ; Van Der Biest O. ; Gordon I. ; Van Gestel D. ; Beaucarne G. ; Poortmans J. ; Stöger-Pollach M. ;<br />

Schattschneider P. ; Gall S.<br />

Antimony induced crystalisation of amorphous silicon<br />

In: Twentieth European Photovoltaic Solar Energy Conference : proceedings of the international conference<br />

held in Barcelona, Spain, 6 - 10 June <strong>2005</strong>, eds. Palz W. [u.a.]<br />

WIP-Renewable Energies, München, <strong>2005</strong>, 1179 - 1181<br />

Weizman M. ; Nickel N.H. ; Sieber I. ; Bohne W. ; Röhrich J. ; Strub E. ; Yan B.<br />

Phase segregation in laser crystallized polycrystalline SiGe thin films<br />

Thin Solid Films<br />

487 (<strong>2005</strong>) 72 - 76<br />

<strong>Annual</strong> <strong>Report</strong> <strong>2005</strong> A 39

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