Supplement Annual Report 2005 - Helmholtz-Zentrum Berlin
Supplement Annual Report 2005 - Helmholtz-Zentrum Berlin
Supplement Annual Report 2005 - Helmholtz-Zentrum Berlin
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HMI Publications<br />
Rau B. ; Petter K. ; Brehme S. ; Sieber I. ; Stöger-Pollach M. ; Schattschneider P. ; Lips K. ; Gall S. ; Fuhs W.<br />
Low-temperature epitaxy for thin-film silicon solar cells by ECRCVD - structural and electronic<br />
properties<br />
In: Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - <strong>2005</strong> : Coronado Springs<br />
Resort, Lake Buena Vista, FL, January 3 - 7, <strong>2005</strong><br />
IEEE Operations Center, Piscataway, NJ, <strong>2005</strong>, 1123 - 1126<br />
Rau B. ; Schneider J. ; Conrad E. ; Gall S. ; Fuhs W.<br />
Polycrystalline Si thin-film solar cells with absorber layers grown at temperatures below 600°C by<br />
ECRCVD<br />
In: Technical digest / 15th International Photovoltaic Science and Engineering Conference (PVSEC-15) :<br />
October 10 - 15, <strong>2005</strong>, Shanghai, China<br />
Shanghai Jiao Tong Univ., Shanghai, <strong>2005</strong>, 778 - 779<br />
Saleh R. ; Nickel N.H.<br />
Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films<br />
Surface & Coatings Technology<br />
198 (<strong>2005</strong>) 143 - 147<br />
Saleh R. ; Nickel N.H. ; Maydell K.V.<br />
Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films<br />
Thin Solid Films<br />
487 (<strong>2005</strong>) 89 - 92<br />
Schneider J. ; Heimburger R. ; Klein J. ; Muske M. ; Gall S. ; Fuhs W.<br />
Aluminum-induced crystallization of amorphous silicon: Influence of temperature profiles<br />
Thin Solid Films<br />
487 (<strong>2005</strong>) 107 - 112<br />
Schneider J. ; Klein J. ; Muske M. ; Gall S. ; Fuhs W.<br />
Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si<br />
Applied Physics Letters<br />
87 (<strong>2005</strong>) 031905/1 - 3<br />
Schneider J. ; Klein J. ; Sarikov A. ; Muske M. ; Gall S. ; Fuhs W.<br />
Suppression of nucleation during the aluminum-induced layer exchange process<br />
In: Amorphous and nanacrystalline silicon science and technology - <strong>2005</strong> : symposium held March 28 - April<br />
1, <strong>2005</strong>, San Francisco, California, U.S.A.<br />
MRS, Warrendale, Pa., <strong>2005</strong>, A2.2.1 - A2.2.6<br />
Stöger-Pollach M. ; Walter T. ; Eyidi D. ; Schneider J. ; Gall S.<br />
The role of an alumina membrane and its phase transformations during the layer exchange process<br />
In: Proceedings / Microscopy conference <strong>2005</strong> ; 6. Dreiländertagung : August 28 - September 2, <strong>2005</strong>, Davos<br />
<strong>2005</strong>, 86<br />
Wang Y. ; Van Der Biest O. ; Gordon I. ; Van Gestel D. ; Beaucarne G. ; Poortmans J. ; Stöger-Pollach M. ;<br />
Schattschneider P. ; Gall S.<br />
Antimony induced crystalisation of amorphous silicon<br />
In: Twentieth European Photovoltaic Solar Energy Conference : proceedings of the international conference<br />
held in Barcelona, Spain, 6 - 10 June <strong>2005</strong>, eds. Palz W. [u.a.]<br />
WIP-Renewable Energies, München, <strong>2005</strong>, 1179 - 1181<br />
Weizman M. ; Nickel N.H. ; Sieber I. ; Bohne W. ; Röhrich J. ; Strub E. ; Yan B.<br />
Phase segregation in laser crystallized polycrystalline SiGe thin films<br />
Thin Solid Films<br />
487 (<strong>2005</strong>) 72 - 76<br />
<strong>Annual</strong> <strong>Report</strong> <strong>2005</strong> A 39