Annual Report 2008 - Institut für Halbleiter - JKU

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8 Research Overview Part A: Semiconductor Physics Group ◦ Photoluminescence setup (Ar ion laser, Nd:Yag laser, grating spectrometer) ◦ CO2 and CO lasers for spectroscopy ◦ Several high-field and low-temperature superconducting magnet systems with He3 cryostat (8 and 16 T, down to 0.3 K) ◦ SQUID-susceptometer for magnetization studies ◦ Parameter analyzer and LCR bridge ◦ On-Wafer Prober
Part A: Semiconductor Physics Group Cleanroom Facility 9 The Cleanroom Facility G. Brunthaler A 230 m² large cleanroom provides the single most important piece of infrastructure at the Institute for Semiconductor and Solid State Physics. It comprises a wide range of installations for nanostructuring and device implementation. The cleanroom is subdivided into four sections with clean room classes ranging from 10000 (MBE-area) to 100 (e-beam lithography). Among the available equipment there are two MBE systems for the growth of Si/Ge and IV- VI/II-VI semiconductor heterostructures, two mask aligners, a wafer bonder, a scanning electron microscope equipped with e-beam lithography, two evaporation systems, a plasma deposition system, two systems for reactive ion etching, a rapid thermal processing unit, and an on-wafer prober with parameter analyzer and L-R-C measurement unit. The cleanroom installations and their capability for nanostructuring and device implementation were essential for most of the projects pursued at the institute, especially for the projects of the SFB025 „IR-ON“, the Nano-Initiative projects „NSI“, „Platon“ and NIL Austria, and the BridgeProjektes LIOPA, as well as for fund raising at FWF, FFG and the EU, and for cooperations with companies. The Christian Doppler Laboratory at the Institute uses the cleanroom for several of its projects, and so does the "Center for Surface and Nanoanalytics” (ZONA) of the TNF faculty. In 2008, the focus of the clean room activities was on the growth of nanostructures prepared by self-organization on planar and prepatterned substrates, on the preparation of colloidal nanostructures, on SiGe quantum dot-based field effect transistors, and on structures for optoelectronic and spintronic investigations. A more detailed account of the 2008 research highlights that were based on the use of cleanroom facilities can be found in Part E of this annual report. In the following a few selected examples for nanostructure preparation in the cleanroom facility are shown. Fig 1 demonstrates a Si microdisk resonator structure, Fig. 2 photonic crystal building blocks on SOI substrates, and Fig. 3 the morphological evolution of self-organized Ge islands grown by MBE on Si(001) substrates that were pit-patterned by e-beam lithography before growth. Figure 1: Si microdisk resonator on SiO2 pedestal defined by e-beam lithography, RIE and selective wet chemical etching. The undercut is necessary to obtain a Si waveguide surrounded by air with its low refraction index. (Work by M. Eibelhuber, G. Langer, S. Bräuer, W. Heiss)
Page 1 and 2: ANNUAL REPORT 2008 INSTITUTE FOR SE
Page 3 and 4: INSTITUT FÜR HALBLEITER- UND FESTK
Page 5 and 6: Annual Report 2008 v Preface Follow
Page 7: Annual Report 2008 vii I would like
Page 10 and 11: Publications 44 published 2008 ....
Page 13 and 14: Part A: Semiconductor Physics Group
Page 17: Part A: Semiconductor Physics Group
Page 43: Part B Abteilung Festkörperphysik
Page 46 and 47: 36 Personnel Part B: Solid State Ph
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Page 50 and 51: 40 Research Overview Part B: Solid
Page 52 and 53: 42 Theses Part B: Solid State Physi
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Part C Christian Doppler Laboratory
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64 Funded Projects Part C: CD Labor
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66 Publications Part C: CD Laborato
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68 Patents Part C: CD Laboratory Fi
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Part D Teaching 71 Winter Semester
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Part D Teaching 73 Summer Semester
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Part D Teaching 75 Winter Semester
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Part D Talks and Seminars 77 Semico
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Part E Selected Publications of the
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Annual Report 2008 - Institut für Halbleiter - JKU

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