Annual Report 2008 - Institut für Halbleiter - JKU

10 Cleanroom Facility Part A: Semiconductor Physics Group
Figure 2: Left: Photonic crystals building blocks implemented on silicon-on-insulator (SOI) substrates
by e-beam lithography in our Leo Supra 35 with Raith Elphy plus attachment and subsequent anisotropic
cryo-etching in our Oxford 100 ICP etcher. The buried oxide was then removed by selective
wet-chemical etching with HF. Right: The cross section of a test sample after oxide removal was imaged
after focused ion beam (FIB) cutting at the faculty's Center for Surface and Nanoanalytics
(ZONA) with a Zeiss XB1540 cross-beam instrument. (Work by R. Jannesari, S. Bräuer, M. Arndt and
F. Schäffler)
Figure 3: Three-dimensional atomic force microscopy micrographs of the morphological evolution of
Ge quantum dots grown on pit-patterned Si(001) substrates. The pattern is written by electron beam
lithography (period 300 nm) and transferred into the Si(001) substrates by reactive ion etching. Hereafter
Ge was deposited on the substrate by means of solid source molecular beam epitaxy. Panel (a)
monitors the pit shape after the growth of a Ge wetting layer. With increasing Ge deposition the morphological
evolution starts from unfacetted pre-pyramids (panel (b)) via {105}-facetted pyramids
(panels (c)-(e)) and transition pyramids (panel (f)) into larger, multi-facetted dots called domes (g),(h).
(Work by M. Grydlik, M. Brehm, and T. Fromherz)
Funding: The cleanroom operation is essentially supported by the Society for Micro- and Nanoelectronics (GME)
Austria.
Corresponding author: Gerhard.Brunthaler@jku.at