Annual Report 2008 - Institut für Halbleiter - JKU
Annual Report 2008 - Institut für Halbleiter - JKU
Annual Report 2008 - Institut für Halbleiter - JKU
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16 Publications Part A: Semiconductor Physics Group<br />
13. M. Meduna, J. Novak, G. Bauer, C. V. Falub, D. Grützmacher Interdiffusion in SiGe alloys<br />
with Ge contents of 25% and 50% studied by x-ray reflectivity, phys. stat. sol. (a)<br />
205, no. 110, p. 2441-2448 (<strong>2008</strong>).<br />
14. S. Danis, V. Holy, J. Stangl, G. Bauer, Diffuse x-ray scattering from graded SiGe/Si layers,<br />
Europhysics Letters 82, 66004/p1-p5 (<strong>2008</strong>).<br />
15. M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, N. Hrauda, W. Jantsch, F. Schäffler,<br />
G. Bauer, Quantitative determination of Ge profiles across SiGe wetting layers on Si<br />
(001), Appl. Phys. Lett. 93, 121901/1-3 (<strong>2008</strong>).<br />
16. Z. Zhong, P. Chen, Z. Jiang, G. Bauer, Temperature dependence of ordered GeSi island<br />
growth on patterned Si (001) substrates, Appl Phys. Lett. 93, 043106/1-3 (<strong>2008</strong>).<br />
17. A. Bonanni, A. Navarro-Quezada, Tian Li, M. Wegscheider, Z. Matej, V. Holy, R. T.<br />
Lechner, G. Bauer, M. Rovezzi, F. D'Acapito, M. Kiecana, M. Sawicki, T. Dietl,<br />
Controlled aggregation of magnetic ions in a semiconductor: an experimental<br />
demonstration, Phys. Rev. Lett. 101, 135502/1-4 (<strong>2008</strong>).<br />
18. K. Koike, T. Itakura, T. Hotei, M Yano, H. Groiss, G. Hesser, and F. Schäffler, Thermal<br />
precipitation of self-organized PbTe quantum dots in CdTe host matrix, physica status<br />
solidi (c) 5, 2746-2749 (<strong>2008</strong>).<br />
19. M. Schramboeck, A.M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, and G.<br />
Strasser, InAs/AlGaAs QDs for intersubband devices, Superlattices and Microstructures<br />
44, 411-415 (<strong>2008</strong>).<br />
20. B. Sanduijav, D. Matei, G. Chen, F. Schäffler, G. Bauer, and G. Springholz, In situ<br />
scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si<br />
(001) substrates, Thin Solid Films 517, 293-296 (<strong>2008</strong>).<br />
21. T.M. Burbaev, V.S. Bagaev, E.A. Bobrik, V.A. Kurbatov, A.V. Novikov, M.M. Rzaev,<br />
N.N. Sibeldin, F. Schäffler, V.A. Tsvetkov, A.G. Tarakanov, and V.V. Zaitsev , Exciton<br />
condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructure,<br />
Thin Solid Films 517, 55-56 (<strong>2008</strong>).<br />
22. D. Pachinger, H. Lichtenberger, G. Chen, J. Stangl, G. Hesser, and F. Schäffler, MBE<br />
growth conditions for Si island formation on Ge (001) substrates, Thin Solid Films 517,<br />
62-64 (<strong>2008</strong>).<br />
23. L. Abtin, G. Springholz, Stabilization of PbSe quantum dots by ultra-thin EuTe and SrTe<br />
barrier layers, Appl. Phys. Lett. 93, 163102/1-3 (<strong>2008</strong>).<br />
24. T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, and W. Heiss,<br />
Temperature-dependent midinfrared photoluminescence of epitaxial PbTe/CdTe quantum<br />
dots and calculation of the corresponding transition energy, Phys. Rev. B 78, 165320/1-9<br />
(<strong>2008</strong>).<br />
25. V. Holy, R.T. Lechner, S. Ahlers, L. Horak, T.H. Metzger, A. Navarro-Quezada, A.<br />
Trampert, D. Bougeard, G. Bauer, Diffuse x-ray scattering from inclusions in<br />
ferromagnetic Ge1-xMnx layers, Phys. Rev. B 78, 144401/1-7 (<strong>2008</strong>).<br />
26. H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss,<br />
K. Koike, T. Ikatura, T. Hotei, M. Yano, T. Wojtowicz, Size-controlled quantum dots<br />
fabricated by precipitation of epitaxially grown, immiscible semiconductor heterosystems,<br />
J. Phys.: Condens. Matter 20, 454216/1-4 (<strong>2008</strong>).
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