Annual Report 2008 - Institut für Halbleiter - JKU

ANNUAL REPORT 2008 

INSTITUTE FOR SEMICONDUCTOR AND 

SOLID STATE PHYSICS

Cover 

Front: GaN nano-crystals grown by catalyst-enhanced metal-organic vapor phase epitaxy on silicon. 

Growth: T. Devillers, SEM image: G. Langer. 

Back: Self-organized SiGe wires on prepatterned Si substrates. Growth: M. Brehm, patterning: M. 

Grydlik. 

Image processing and cover layout: Julian Stangl.

INSTITUT FÜR HALBLEITER- UND 

FESTKÖRPERPHYSIK 

JOHANNES KEPLER UNIVERSITÄT LINZ 

ANNUAL REPORT 

2008 

PART A: Abteilung für Halbleiterphysik 

Semiconductor Physics Group 

PART B: Abteilung für Festkörperphysik 

Solid State Physics Group 

PART C: Christian Doppler Laboratory for 

Surface Optical Methods 

PART D: Lehre, Seminare und Symposia 

Teaching, Seminars, and Symposia 

PART E: Selected Publications 

A-4040 Linz, Altenberger Strasse 69 

Tel.: +43-(0)732-2468-9600 

Fax: +43-(0)732-2468-8650 

e-mail: halbleiterphysik@jku.at 

internet: http://www.hlphys.jku.at

Institut für Halbleiter- und Festkörperphysik 

Institute for Semiconductor and Solid State Physics 

Leiter / Head 

O.Univ.Prof. Dr. Günther BAUER 

e-mail guenther.bauer@jku.at 

Tel. +43-(0)732-2468-9600 

Fax +43-(0)732-2468-8650 

Abteilung für Halbleiterphysik Abteilung für Festkörperphysik 

Semiconductor Physics Group Solid State Physics Group 

Leiter / Head: Leiter / Head: 

O.Univ.Prof. Dr. Günther BAUER Univ.Prof. Dr. Reinhold KOCH 

e-mail: guenther.bauer@jku.at e-mail: reinhold.koch@jku.at 

Tel. +43-(0)732-2468-9601 Tel. +43-(0)732-2468-9640 

Secretary: Secretary: 

e-mail: halbleiter@jku.at e-mail evelyn.rund@jku.at 

Tel. +43-(0)732-2468-9600 Tel. +43-(0)732-2468-9639 

Fax +43-(0)732-2468-8650 Fax +43-(0)732-2468-9696 

Impressum 

ANNUAL REPORT 2008 

Institute for Semiconductor and Solid State Physics 

Johannes Kepler University Linz, Altenberger Straße 69, A-4040 Linz 

Tel.: +43-732-2468-9600; e-mail: halbleiter@jku.at 

Edited by: F. Schäffler, H. Sitter, S. Schwind, E. Rund 

Copying is welcome, provided the source is acknowledged and an archive copy is sent to the above 

address

Annual Report 2008 v 

Preface 

Following the scheme of previous annual reports, we describe in this report the research and 

teaching activities of the Institut für Halbleiter- und Festkörperphysik and its cooperation 

with industry in the year 2008. This report is organized in five parts, one for each of the two 

subdivisions of the Institute, the Abteilung Halbleiterphysik (headed by G. Bauer) and the Abteilung 

Festkörperphysik (headed by R. Koch). The third part presents achievements of the 

Christian Doppler Laboratory for Surface Optical Methods headed by K. Hingerl, the fourth 

part gives an overview on the teaching activities of the institute, and the fifth part is a selection 

of research topics of the institute, which were published in 2008 in journals with high 

impact factor. 

Graduations, scientific achievements 

2008 was a particularly successful year for the Institute. All joint research programs (SFB 

NFN, and Austrian Nano Initiative) in which members of the Institute are involved succeeded 

in being extended for further periods. Seven persons graduated from the institute as “Diplom- 

Ingenieur” and three PhD students finished their studies successfully. They made important 

contributions to the scientific output of the institute 

Alberta Bonanni who had submitted her Habilitation thesis in 2007, was appointed "Universitätsdozentin" 

in 2008. 

In 2008 four papers were published in Physical Review Letters, seven in Applied Physics Letters, 

there were nine PRB’s (one in Rapid Commun.), two in Advanced Materials, one in 

Angew. Chemie (Int. Ed), two in Europhys. Letters, one in Optics Express, and two in the 

ESRF highlights. Institute members filed 5 patents. 

Conference organization 

From September 15 th to September 19 th 2008 Julian Stangl and coworkers organized the 9 th 

Biannual Conference on High Resolution X-ray Diffraction and Imaging in Linz Austria, 

which was attended by about 190 participants from Europe, the US, and Asia. 

Interface- Controlled and Functionalised Organic Films 

Helmut Sitter is the principal investigator of a successful National Research Network entitled 

“Interface- Controlled and Functionalised Organic Films” which was funded by the Austrian 

Science Fund in October 2005 for three years. In this project four groups at the University of 

Linz, one from the University of Graz, two from Montanuniversity Leoben and one from the 

Fachhochschule Wels are involved. The main goal of this NFN is the understanding of fundamental 

processes in organic film formation, their interfaces, as well as their properties and 

their functionalisation. 2008 was governed by writing the reports about the first three years 

and to propose the research program for the next working period. The results achieved in the 

first period of the national research network were presented at a hearing in Vienna in autumn 

2008 to the seven international reviewers from chemistry, physics and computer science. Numerous 

highly ranked publications could be summarized at this occasion, among which most 

results were obtained by two or more research groups in the consortium. The evaluators 

ranked this research network among the best three in this field in all over Europe, and supported 

the extension for the next three years. Based on the prolongation of the NFN at least 5 

PhD positions in physical chemistry, physics and informatics can be financially supported. 

Furthermore, a substantial part of the scientific output of the NFN was presented in a special

vi Annual Report 2008 

symposium of the E-MRS spring meeting in Strasbourg, which was mainly dedicated to the 

topic of this research network. 

NanoScience and Technology 

Friedrich Schäffler is the coordinator of the project cluster “Nanostructured Surfaces and Interfaces” 

(NSI) of the Austrian Nano Initiative, incited by the Austrian Council for Research 

and Technology. In 2008 the NSI consortium submitted a proposal for its last funding period 

03/2009 - 02/2012. Several modifications in the project structure were introduced in order to 

put more emphasis on applied research and nanoanalytics. New partners were recruited, and 

new projects were introduced, while others were phased out, as planned. As an outcome of the 

hearing and the decision of the Austrian Nanoinitiative, funding for NSI was granted in Dec. 

2008 for the final three year period. Total funding for this period will amount to € 3.1M, at a 

total project volume of € 3.6M. 

The third funding period of NSI will bring together five (up from four) research institutions 

and six (up from five) companies. The former comprises Johannes Kepler University, UAR, 

the University and the Technical University of Graz and the Technical University in Vienna. 

The companies are from Upper Austria, Lower Austria and Vienna. 

Spezialforschungsbereich “IRON” 

In July 2008 the prolongation project for the special research program (Spezialforschungsbereich 

SFB 025) entitled “Infrared Optical Nanostructures” was submitted to the FWF. This 

project is a collaboration with groups from the Technical University of Vienna, the Universities 

of Vienna and Jena, and the Technical University of Munich. In December 2008 the project 

evaluation by scientists from the US, from Great Britain, Switzerland. Italy and Germany 

resulted in the strong recommendation to fund this SFB for another three years. Based on this 

recommendation finally in May 2009 the FWF granted the funds for three further years (2009 

– 2012). The principal investigators of five of the eleven granted projects are from this Institute 

in Linz with a project volume of about € 1.6 M. This amount will support the work of 8 

PhD students and 2 post-docs. 

Two new FWF projects P20650-N20 (Heusler-Legierungsschichten auf Halbleiter-Substraten 

and P20773-N20 (ESR-STM von organischen Nanoadsorbaten auf Silizium) were granted to 

Reinhold Koch. Alberta Bonanni is part of a Project granted by the European Research Council 

(ERC) on Functionalisation of diluted magnetic semiconductors. 

Awards 

Patrick Rauter was the recipient of one of the IUPAP young author best paper awards. He received 

this prize during the ICPS-29 in Rio de Janeiro in July 2008. Elisabeth Lausecker and 

Iris Bergmair were the recipients of the Austrian Nano Youth Award in 2008. 

Structure and personnel 

By the end of the year, the Institute had 49 co-workers in the Halbleiterphysik, 47 in Festkörperphysik, 

and 14 in the CD lab, so altogether quite a large number of persons were working 

in the semiconductor physics building of our University.

Annual Report 2008 vii 

I would like to thank all Institute members, students and co-workers for their work and enthusiasm, 

not only in their own projects, but also in all other activities of the institute. Herewith I 

would like to thank also all our partners and colleagues from abroad for their help and collaboration, 

and our sponsors: 

◦ Johannes Kepler Universität, 

◦ Austrian Federal Ministry of Science, Education and Culture, 

◦ Austrian Federal Ministry of Infrastructure, 

◦ Austrian Science Fund (FWF), 

◦ Gesellschaft für Mikro- und Nanoelektronik (GMe), 

◦ Fonds zur Förderung der Gewerblichen Wirtschaft (FFF) 

◦ Oberösterreichische Landesregierung, 

◦ Österreichischer Akademischer Austauschdienst, 

◦ European Union, Brussels. 

Finally, I would like to thank Friedrich Schäffler and Helmut Sitter who accepted the tedious 

task of being editors for this report. 

Guenther Bauer Linz, July 2009

Table of contents 

Preface v 

PART A: Semiconductor Physics Group 11 

Personnel 3 

Scientific staff .................................................................................................................... 3 

Technical and support staff .............................................................................................. 4 

Visiting researchers........................................................................................................... 5 

Research visits of institute members .............................................................................. 5 

Dozent assigned to the institute....................................................................................... 5 

Research Overview 6 

Cleanroom Facility 9 

Research Initiatives 11 

SFB025-IRON (Infrared Optical Nanostructures) .......................................................... 11 

Project Cluster Nanostructured Surfaces and Interfaces (NSI)................................... 12 

Diploma and Doctoral Theses 13 

Diploma theses finished in 2008..................................................................................... 13 

Current diploma theses................................................................................................... 13 

Doctoral theses finished in 2008 .................................................................................... 13 

Current doctoral theses................................................................................................... 13 

Publications 15 

published 2008 ................................................................................................................. 15 

submitted 2008 / in print.................................................................................................. 18 

Talks and Presentations 20 

Invited Talks ..................................................................................................................... 20 

Conference Presentations (Talks and Posters) ............................................................ 21 

Funded Research Projects 27 

Fonds zur Förderung der Wissenschaftlichen Forschung (FWF) ............................... 27 

Österreichische Forschungsförderungsgesellschaft (FFG) ........................................ 28 

European Community...................................................................................................... 29 

GMe ................................................................................................................................... 30 

Extramural Activities 31 

Industrial Collaborations 31 

Organizational, Training, Awards 31 

News Coverage ................................................................................................................ 32 

PART B: Solid State Physics Group 33 

Personnel 35 

Scientific staff .................................................................................................................. 35 

Visiting researchers......................................................................................................... 37 

Research visits of institute members ............................................................................ 38 

Research 39 

Diploma and Doctoral Theses 41 

Current diploma theses................................................................................................... 41


published 2008 ................................................................................................................. 44 

submitted 2008 ................................................................................................................. 47 


Invited Talks...................................................................................................................... 50 

Conference Presentation................................................................................................. 51 

Funded Research Projects 56 

Extramural Activities 59 

Industrial Collaborations 59 

PART C: CD Lab for Surface Optical Methods 61 

Personnel 63 

Running and Accepted Projects 64 



Invited Talks...................................................................................................................... 67 

Conference Presentations (Talks and Posters)............................................................. 67 

Filed and granted patents................................................................................................ 68 

PART D: Teaching, Seminars, and Symposia 69 

Winter Semester 2007/2008 71 

Summer Semester 2008 73 

Winter Semester 2008/2009 75 

Semiconductor Physics Seminar Talks 77 

PART E: Selected Publications 79 

Selected Publications and Research Reports 81

Part A 

Abteilung Halbleiterphysik 

– 

Semiconductor Physics Group

Part A: Semiconductor Physics Group Personnel 3 

Personnel 

The scientific-personnel structure of the semiconductor physics group consists of: 

◦ 2 permanent professor positions (granted by ministry of science), 

◦ 4 permanent scientific member positions (granted by ministry of science), 

◦ 2 full non-permanent scientific member positions (PhDs granted by ministry of science), 

◦ 20 non-permanent scientific member positions (granted by FWF, EC, ÖAD), 

Thus, for each permanent staff member an average of nearly 4 non-permanent research positions 

were acquired through granted research projects. 

Scientific staff 

Researchers funded by ministry of science 

name degree position 

Günther Bauer Dr. O. Univ.-Prof. 

Friedrich Schäffler Dr. Univ.-Prof. 

Gerhard Brunthaler Doz. Dr. Ao.-Prof. 

Gunther Springholz Doz. Dr. Ao.-Prof. 

Julian Stangl Doz. Dr. Ao.-Prof. 

Thomas Fromherz Dr. Univ.-Ass. 

Graduate (PhD) students 

name degree funding graduated 

Laurel Abtin M.Sc. FWF June 2008 

Mateusz Bednorz M.Sc. FFG (LIPOAH) 

Moritz Brehm DI FWF 

Jürgen Danzberger DI (FH). FWF (from Nov. 2008) 

Heiko Groiss DI Univ. Linz 

Martyna Grydlik DI FWF 

Thomas Hörmann DI FWF 

Nina Hrauda Mag. EC (d-DOT FET), FWF 

Reyhaneh Jannesari M.Sc. FWF (from Nov. 2008, 50%funding) 

Mario Keplinger DI FWF (from August 2008) 

Raimund Kirchschlager DI FWF (50%) 

Gregor Langer DI Univ. Linz 

Elisabeth Lausecker DI FWF, FFG (NILquantumdot) 

Dmytro Lugovyy M.Sc. FWF

4 Personnel Part A: Semiconductor Physics Group 

Bernhard Mandl DI EC (SANDiE), FWF (partly working at 

Univ. Lund) 

Dan Gheorgita Matei M.Sc.. FWF 

Rajivsingh Kiran Mundboth M.Sc.. FWF (until March 08, 50% funding) 

Dietmar Pachinger DI FWF 

Patrick Rauter DI FWF 

Aaliya Rehman M.Sc. ÖAD October 2008 

Mathias Simma DI FWF 

Mahmood Ul-Hassan M.Sc. scholarship (Pakistan) 

Eugen Wintersberger DI FWF 

Jianjun Zhang MSc EC (d-DOT FET) 

Post docs 

name degree funding 

Ana Diaz (ESRF Grenoble) Dr. FWF 

Rainer Lechner Dr. FWF 

Herbert Lichtenberger Dr. FWF (until March 2008) 

Rainer Lechner Dr. FWF 

Marie-Ingrid Richard (ESRF Grenoble)Dr. FWF (50% funding, until March 08) 

Bolormaa Sanduijav Dr. FWF 

Diploma students 

name 

Florian Hackl 

graduated 

Elisabeth Lausecker 

Stefan Kriechbaumer 

Dominik Kriegner 

Jan. 2008 

Mario Keplinger March 2008 

Cornelia Reitböck 

Wilhelm Schmelz 

(working at company Profactor) 

Technical and support staff 

name position 

Friedrich Binder mechanic 

Stephan Bräuer clean room technician 

Alma Halilovic laboratory technician

Part A: Semiconductor Physics Group Personnel 5 

Günter Hesser technician 

Ursula Kainz laboratory technician 

Susanne Schwind, Mag. administration 

Alexandra Stangl administration 

Michael Teuchtmann technician (part time) 

Ernst Vorhauer, Ing. (HTL-Elektronik) electronics engineer 

Visiting researchers 

name home institution duration 

Vaclav Holy, Prof. Charles Univ. Prag (CZ) 1 month 

Stanislav Danis, Dr. Charles Univ. Prag (CZ) 1 month 

Mojmir Meduna, Dr. Masaryk Uni. Brno (CZ) 1 month 

Research visits of institute members 

name visit to 

G. Bauer ESRF Grenoble 

T. Fromherz Free-Electron Laser FELIX, Rijnhuizen, NL 

N. Hrauda DESY Hamburg, ESRF Grenoble 

M. Keplinger DESY Hamburg, ESRF Grenoble 

R. Lechner DESY Hamburg, ESRF Grenoble 

B. Mandl University of Lund, Sweden 

P. Rauter Free-Electron Laser FELIX, Rijnhuizen, NL 

J. Stangl DESY Hamburg, ESRF Grenoble 

E. Wintersberger DESY Hamburg, ESRF Grenoble, Masaryk Univ. Brno 

Dozent assigned to the institute 

name permanent address 

Ernest Fantner, Doz. Dr. SCL-Sensor.Tech.GesmbH

6 Research Overview Part A: Semiconductor Physics Group 

Research Overview 

Nanostructures 

Research at the institute is focused on investigation and fabrication of semiconductor heteroand 

nanostructures and it is a major part of the center of “Nanoscience and Technology” of 

the Johannes Kepler University Linz. The research encompasses all aspects of semiconductor 

nanostructures, ranging from nanofabrication, fundamental investigations and modeling of 

physical properties up to the realization of novel nanostructure devices for spintronic and infrared 

optoelectronic applications. Nanostructures are fabricated using advanced lithography 

and processing techniques including electron beam lithography, holographic lithography, as 

well as self-assembled growth of quantum dots using molecular beam epitaxy. For these purposes, 

a class 100 clean room facility with all necessary processing equipment is run at the 

institute. The objective of nanofabrication is to produce defect free structures in the sub 50 nm 

range with good control of shapes and compositions, sharp heterointerfaces and excellent optical 

and electronic properties. A particular emphasis is on the development of site-control 

techniques for positioning of self-assembled nanostructures. 

The research activities are embedded in several large research initiatives and project clusters 

such as the IRON special research program, the NSI Nanostructured Surface and Interface 

project cluster, as well as the SANDiE European network of excellence and several other EU 

funded research projects, more details are given in the other parts of the annual report. 

Physical Properties 

The fundamental structural, electronic, optical and magnetic properties of nanostructures are 

studied using a wide range of techniques. These range from advanced x-ray scattering techniques 

using advanced laboratory as well as synchrotron radiation sources, high-resolution 

electron microscopy, scanning force and scanning tunneling microscopy, optical spectroscopy 

as well as low temperature magnetotransport investigations. An important focus of research is 

to correlate the actual electronic properties of nanostructures with the structural properties determined 

by the fabrication processes, taking advantage of the complementary information 

gained by the wide range of techniques and modeling tools. A strong emphasis is on infrared 

spectroscopy of interband and intersubband electronic transitions in SiGe and narrow band 

gap semiconductors heterostructures, as well as on ballistic and quantum transport studies of 

SiGe and III-V hetero- and nanostructures in the milli-Kelvin temperature regime. In addition, 

the magnetic properties of magnetic semiconductor hetero- and nanostructures are investigated 

and novel tools for nanostructure investigations based on synchrotron light sources are 

developed. 

Devices 

Several research projects are devoted to the fabrication of hetero- and nanostructure devices, 

for mid-infrared intersubband and interband detectors, quantum cascade structures, midinfrared 

vertical cavity surface emitting lasers, resonant cavity detectors as well as transport 

devices such as quantum dot and single electron transistors. In addition, novel spintronic devices 

that take advantage of the spin degree of freedom in order to produce new functionalities 

are developed.

Part A: Semiconductor Physics Group Research Overview 7 

Materials 

From the materials side, a strong focus is on Si/SiGe/SiGeC based hetero- and nanostructures 

for which a large molecular beam epitaxy system is operated in the clean room of the institute 

as well as another system devoted to in situ growth studies using scanning tunneling microscopy. 

The second major group of materials are the narrow gap IV-VI compounds, based on 

PbSe and PbTe as well as the magnetic europium chalcogenide semiconductors. For these materials 

another two molecular beam epitaxy systems are operated at the institute. The fabricated 

samples and structures are also supplied to research groups outside of the institute in the 

framework of long-term international collaborations. On the other hand, also materials and 

structures from outside groups are investigated with techniques developed at our institute. 

Experimental facilities 

Growth of low dimensional semiconductor heterostructures: 

◦ Riber SIVA 45 SiGeC molecular beam epitaxy system 

◦ Riber 1000 and Riber 32 molecular beam epitaxy systems for IV-VI semiconductors 

◦ Varian Gen II molecular beam epitaxy system for IV-VI semiconductors 

◦ UHV system for in situ growth studies of SiGe nanostructure structures using STM 

Processing and fabrication of nanostructures: 

◦ 230 m 2 clean room with areas of class 100 – 10000 

◦ optical lithography (mask aligner) for front and bottom side 

◦ UV-nanoimprint lithography 

◦ holographic lithography 

◦ electron beam lithography 

◦ reactive ion etching (RIE) 

◦ inductively coupled plasma etching (ICP) 

◦ SiO2, Si3N4 plasma deposition 

◦ electron beam evaporation system for metallization 

◦ wafer bonder 

◦ diffusion and annealing ovens 

◦ rapid thermal processing (RTP) 

Surface analysis, structural, optical, electrical, and magnetic investigations: 

◦ UHV-scanning tunneling microscopes 

◦ Atomic force microscopes 

◦ Scanning electron microscope 

◦ Nomarski microscope 

◦ Three high-resolution X-ray diffractometers, one with multilayer x-ray mirror 

◦ Rotating anode X-ray system with four-circle diffractometer 

◦ Two Fourier-transform infrared spectrometers including cryostats and magnet systems

8 Research Overview Part A: Semiconductor Physics Group 

◦ Photoluminescence setup (Ar ion laser, Nd:Yag laser, grating spectrometer) 

◦ CO2 and CO lasers for spectroscopy 

◦ Several high-field and low-temperature superconducting magnet systems with He3 cryostat 

(8 and 16 T, down to 0.3 K) 

◦ SQUID-susceptometer for magnetization studies 

◦ Parameter analyzer and LCR bridge 

◦ On-Wafer Prober

Part A: Semiconductor Physics Group Cleanroom Facility 9 

The Cleanroom Facility 

G. Brunthaler 

A 230 m² large cleanroom provides the single most important piece of infrastructure at the 

Institute for Semiconductor and Solid State Physics. It comprises a wide range of installations 

for nanostructuring and device implementation. The cleanroom is subdivided into four sections 

with clean room classes ranging from 10000 (MBE-area) to 100 (e-beam lithography). 

Among the available equipment there are two MBE systems for the growth of Si/Ge and IV- 

VI/II-VI semiconductor heterostructures, two mask aligners, a wafer bonder, a scanning electron 

microscope equipped with e-beam lithography, two evaporation systems, a plasma deposition 

system, two systems for reactive ion etching, a rapid thermal processing unit, and an 

on-wafer prober with parameter analyzer and L-R-C measurement unit. 

The cleanroom installations and their capability for nanostructuring and device implementation 

were essential for most of the projects pursued at the institute, especially for the projects 

of the SFB025 „IR-ON“, the Nano-Initiative projects „NSI“, „Platon“ and NIL Austria, and 

the BridgeProjektes LIOPA, as well as for fund raising at FWF, FFG and the EU, and for cooperations 

with companies. The Christian Doppler Laboratory at the Institute uses the cleanroom 

for several of its projects, and so does the "Center for Surface and Nanoanalytics” 

(ZONA) of the TNF faculty. 

In 2008, the focus of the clean room activities was on the growth of nanostructures prepared 

by self-organization on planar and prepatterned substrates, on the preparation of colloidal 

nanostructures, on SiGe quantum dot-based field effect transistors, and on structures for optoelectronic 

and spintronic investigations. A more detailed account of the 2008 research highlights 

that were based on the use of cleanroom facilities can be found in Part E of this annual 

report. 

In the following a few selected examples for nanostructure preparation in the cleanroom facility 

are shown. Fig 1 demonstrates a Si microdisk resonator structure, Fig. 2 photonic crystal 

building blocks on SOI substrates, and Fig. 3 the morphological evolution of self-organized 

Ge islands grown by MBE on Si(001) substrates that were pit-patterned by e-beam lithography 

before growth. 

Figure 1: Si microdisk resonator on SiO2 pedestal defined by e-beam lithography, RIE and selective 

wet chemical etching. The undercut is necessary to obtain a Si waveguide surrounded by air with its 

low refraction index. (Work by M. Eibelhuber, G. Langer, S. Bräuer, W. Heiss)

10 Cleanroom Facility Part A: Semiconductor Physics Group 

Figure 2: Left: Photonic crystals building blocks implemented on silicon-on-insulator (SOI) substrates 

by e-beam lithography in our Leo Supra 35 with Raith Elphy plus attachment and subsequent anisotropic 

cryo-etching in our Oxford 100 ICP etcher. The buried oxide was then removed by selective 

wet-chemical etching with HF. Right: The cross section of a test sample after oxide removal was imaged 

after focused ion beam (FIB) cutting at the faculty's Center for Surface and Nanoanalytics 

(ZONA) with a Zeiss XB1540 cross-beam instrument. (Work by R. Jannesari, S. Bräuer, M. Arndt and 

F. Schäffler) 

Figure 3: Three-dimensional atomic force microscopy micrographs of the morphological evolution of 

Ge quantum dots grown on pit-patterned Si(001) substrates. The pattern is written by electron beam 

lithography (period 300 nm) and transferred into the Si(001) substrates by reactive ion etching. Hereafter 

Ge was deposited on the substrate by means of solid source molecular beam epitaxy. Panel (a) 

monitors the pit shape after the growth of a Ge wetting layer. With increasing Ge deposition the morphological 

evolution starts from unfacetted pre-pyramids (panel (b)) via {105}-facetted pyramids 

(panels (c)-(e)) and transition pyramids (panel (f)) into larger, multi-facetted dots called domes (g),(h). 

(Work by M. Grydlik, M. Brehm, and T. Fromherz) 

Funding: The cleanroom operation is essentially supported by the Society for Micro- and Nanoelectronics (GME) 

Austria. 

Corresponding author: Gerhard.Brunthaler@jku.at

Part A: Semiconductor Physics Group Research Initiatives 11 

Research Initiatives 

Special Research Programme SFB025-IRON: „Infrared Optical 

Nanostructures“ 

Günther Bauer 

One of the objectives of this "Spezialforschungsbereich IRON" is to employ semiconductor 

nanostructures in order to overcome the shortage of efficiently functioning optoelectronic 

semiconductor devices in the 2 to 20 �m wavelength range. In order to achieve this goal we 

plan to make significant advances in the understanding and development of novel nanostructures 

for future mid-infrared devices. This SFB involves groups from the Technical University 

of Vienna, the theory groups from the University of Vienna, the Technical University of 

Munich and the University of Jena, and five projects from our institute in Linz. 

IROn’s mission is defined by the following scientific goals: 

1) to obtain new physical insights into carrier and spin dynamics, infrared response, energy 

level schemes and many body effects in quantum confined nanostructures 

2) to advance state of the art nanofabrication through self-assembled growth of quantum dots, 

their ordering on prepatterned substrates, as well as by epitaxial integration of chemically 

synthesized nanocrystals and by modelling growth dynamics 

3) to develop novel infrared quantum dot devices by exploiting and engineering the singular 

density of states, by tuning of the electronic coupling between quantum dots, and by photon 

confinement using photonic band gap structures. 

In 2008 the final report for the first four years was due and an extension project for the next 

funding period (2009-2012) was submitted to the FWF. A hearing took place in December 

2008 in Vienna with referees from the USA, Italy, Switzerland, Great Britain and Germany 

and based on the very positive recommendation of this committee the FWF decided in May 

2009 to grant the further funding. For the five groups in Linz involved in the SFB, funds were 

granted for the employment of 8 PhD students and 2 post-docs for the next three years and 

thus this SFB will continue to have a significant impact on the scientific work carried out at 

this Institute. 

More information: http://www.hlphys.uni-linz.ac.at/hl/IRON_SFB/IRON_SFB.html 

Funding: FWF 

Corresponding Author: Guenther.Bauer@jku.at

12 Research Initiatives Part A: Semiconductor Physics Group 

Project Cluster Nanostructured Surfaces and Interfaces (NSI) 

F. Schäffler 

The project clusters NSI: Nanostructured Surfaces and Interface, is funded by the Austrian 

NanoInitiative since 2005. Work is carried out by a consortium around the Johannes Kepler 

University and Upper Austrian Research (UAR). So far, funding was granted for two-year 

periods, after which a fully refereed new proposal was required. After two funding periods 

(03/2005 - 02/2007 and 03/2007 - 02/2009) in 2008 the proposal and hearing for the third 

funding period was due. Modifications in the funding rules led to an increase of the duration 

of funding periods to three years, while simultaneously limiting the overall duration of a project 

cluster to seven years. On this base the NSI consortium submitted a proposal for its last 

funding period 03/2009 - 02/2012. Several modifications in the project structure were introduced 

in order to put more emphasis on applied research and nanoanalytics. New partners 

were recruited, and new projects were introduced, while others were phased out, as planned. 

As an outcome of the hearing and the decision of the Austrian Nanoinitiative, funding for NSI 

was granted in Dec. 2008 for the final three year period. Total funding for this period will 

amount to € 3.1M, at a total project volume of € 3.6M. 

The third funding period of NSI will bring together five (up from four) research institutions 

and six (up from five) companies. The former comprises Johannes Kepler University, UAR, 

the University and the Technical University of Graz and the Technical University in Vienna.The 

companies are from Upper Austria, Lower Austria and Vienna. NSI is coordinated 

by the Institute for Semiconductor and Solid State Physics (coordinator: F. Schäffler). 

The general purpose of NSI is, to link the expertise and infrastructure in the field of 

NanoScience and Technology, which was systematically developed since the early 1990s in 

Linz and Upper Austria, and to make them available to both the Austrian industry and to education 

inside and outside the university. In this way, NSI is directly related to the aims of the 

Exzellenzschwerpunkt in NanoScience/Technology, which was established in 2003 at Johannes 

Kepler University. NSI covers the main competence areas at Johannes Kepler University, 

namely Biocompatible Nano-structures, Polymers and Nanocomposites, Surfaces and Interfaces 

and Semiconductor Nanostructures. The latter contributes chemical synthesis of semiconducting 

nanocrystals, nanostructuring in the cleanroom of the Institute for Semiconductor 

and Solid State Physics, and nanoanalytics. Additional contributions of the institute to the 

aims of the Austrian Nanoinitiative are made via participation in two other project clusters, 

namely PLATON and NILAustria. 

Besides overall coordination, the Institute for Semiconductor and Solid State Physics is directly 

involved in four of the nine (eight) projects of the second (third) funding period of NSI. 

More Information: www.nanoscience.at 

Funding: Austrian Nano Initiative (FFG, FWF) 

Corresponding Author: Friedrich.Schaffler@jku.at

Part A: Semiconductor Physics Group Theses 13 

Diploma and Doctoral Theses 

Diploma theses finished in 2008 

1. Mario Keplinger 

”Structural investigation of core-shell nanowires” 

Current diploma theses 

1. Florian Hackl 

“Setup for SiGe single dot photocurrent spectroscopy” 

2. Markus Humer 

“Substrates for surface enhanced Raman scattering” 

3. Stefan Kriechbaumer 

“Epitaxial growth of PbTe/CdTe nanocrystals” 

4. Dominik Kriegner 

“X-ray diffraction from InAs/InAsP nanowires” 

5. Cornelia Reitböck 

“Shape memory polymers for imprint lithography” 

6. Wilhelm Schmelz 

“Low dimensional transport in Si/SiGe heterostructures” 

Doctoral theses finished in 2008 

1. M.Sc. Laurel Abtin 

“Shape transitions and intermixing of self-assembled PbSe quantum dots studied by 

Scanning Tunnelling Microscopyy” 

2. M.Sc. Aaliya Rehman Khan 

“Characterization of uniaxially strained SiGe heterostructures using x-ray diffraction” 

3. M.Sc. Rajivsingh Kiran Mundboth 

“X-ray micro-diffraction of single SiGe/Si(001) islands: beyond the ensemble average” 

Current doctoral theses 

1. M.Sc. Mateusz Bednorz 

"Lichtabsorption und Photovoltaik organisch-anorganischer Halbleitergrenzflächen" 

2. DI Moritz Brehm 

“Photoluminescence and x-ray investigations of dots and wires” 

3. DI (FH) Jürgen Danzberger 

"Localization of individual biomolecules on nano-patterned substrates" 

4. DI Heiko Groiss 

“Transmission Electron Microscopy of Semiconductor Heterointerfaces”

14 Theses Part A: Semiconductor Physics Group 

5. DI Martyna Grydlik 

"SiGe nanostructures for optoelectronic applications: advanced detector development and 

growth of novel quantum dot arrays." 

6. DI Astrid Hochreiner 

“IV-VI / II-VI Quantum Dot Nanoprecipitates” 

7. DI Thomas Hörmann 

"Berechnung von elektrischen Transporteigenschaften niedrigdimensionaler Halbleiterstrukturen“ 

8. Mag. Nina Hrauda 

"X-ray diffraction studies of semiconductor nanostructures“ 

9. DI Raimund Kirchschlager 

“Magnetotransport and magneto-optical investigations of magnetic semiconductors” 

10. DI Gregor Langer 

"Spin manipulation in Si/SiGe heterostructures" 

11. DI Elisabeth Lausecker 

“Large area, high density patterns defined by nanoimprint lithography for the sitecontrolled 

deposition of semiconductor nanostructures” 

12. M.Sc. Dmytro Lugovyy 

“Investigation of vertical and lateral ordering in self-organized PbSe quantum dot superlattices” 

13. M.Sc. Dan G. Matei 

“Scanning tunneling microscopy investigations of self-assembled semiconductor nanostructures” 

14. DI Bernhard Mandl 

“MOCVD growth of nanowires” 

15. Dipl.Ing. Dietmar Pachinger 

”High Mobility Si/SiGe Heterostructures for spintronic Applications” 

16. Dipl.Ing. Patrick Rauter 

“SiGe nanostructures for next generation infrared detectors“ 

17. Dipl.Ing. Mathias Simma 

“Photoleitungsuntersuchungen an Quantenpunkten” 

18. M.Sc. Mahmood Ul-Hassan 

“Molecular Beam Epitaxy of feromagnetic GeMnTe” 

19. Dipl.Ing. Eugen Wintersberger 

“Röntgenbeugung und –reflexion an Si/SiGe/GaAs Hetero- und Nanostrukturen” 

20. M.Sc. Jianjun Zhang 

"MBE growth of ordered SiGe islands and their structural characterization”

Part A: Semiconductor Physics Group Publications 15 

published 2008 

Publications 

1. M. Brehm, T. Suzuki, Z. Zhong, T. Fromherz, J. Stangl, G. Hesser, S. Birner, F. Schäffler, 

G. Bauer, Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration, 

Microelectronics Journal 39, 485-488 (2008). 

2. V. Holy, K. Mundboth, C. Mocuta, T. H. Metzger, J. Stangl, G. Bauer, T. Boeck, M. 

Schmidbauer, Structural characterization of self-assembled semiconductor islands by 

three-dimensional x-ray diffraction mapping in reciprocal space, Thin Solid Films 516, 

8022-8028 (2008). 

3. Virginie Chamard, Julian Stangl, Stephane Labat, Bernhard Mandl, Rainer T. Lechner and 

Till. H. Metzger, Evidence of stacking fault distribution along an InAs nanowire using micro-focussed 

coherent x-ray diffraction, J. Appl. Cryst. 41, 272-280 (2008). 

4. M.-I. Richard, G. Chen, T. U. Schülli, G. Renaud, G. Bauer, Coalescence of domes and 

superdomes at a low growth rate or during annealing: towards the formation of “flat-top 

superdomes, Surface Science 602 , 2157-2161 (2008). 

5. V. Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T. Warming, A. 

Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, F. Schäffler, Energy transfer in closepacked 

PbSe nanocrystal films, Phys. Rev. B 77, 085322-1/9 (2008). 

6. I. A. Vartaniants, A. V. Zozulya, K. Mundboth, O. Yefanov, M.-I. Richard, E. 

Wintersberger, J. Stangl, A. Diaz, C. Mocuta, T. H. Metzger, G. Bauer, T. Boeck, M. 

Schmidbauer, Crystal truncation planes revealed by three-dimensional reconstruction of 

reciprocal space, Phys. Rev. B 77,, 115317/1-9 (2008). 

7. G. Chen, G. Vastola, H. Lichtenberger, D. Pachinger, G. Bauer, W. Jantsch, F. Schäffler, 

L. Miglio, Ordering of Ge islands on hill-patterned Si (001) templates, Appl. Phys. Lett. 

92, 113106-1/3 (2008). 

8. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von 

Känel, E. Wintersberger, J. Stangl, G. Bauer, Phonon strain shift coefficients in Si1-xGex 

alloys, J. Appl. Phys. 103, 093521-1/4 (2008). 

9. C. Mocuta, J. Stangl, K. Mundboth, T. H. Metzger, G. Bauer, I. A. Vartaniants, M. 

Schmidbauer, T. Boeck, Beyond the ensemble average: x-ray microdiffraction analysis of 

single SiGe islands, Phys. Rev. B 77, 245425-1/5 (2008). 

10. G. Springholz, Self-organized quantum dot multilayer structures, In: "Handbook of Self- 

Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics”, 

ed. M. Henini, Elsevier, Oxford 2008, p. 1-60. 

11. M. Böberl, M. V. Kovalenko, G. Pillwein, G. Brunthaler, W. Heiss, Quantum Dot Nanocolumn 

Photodetectors for Light Detection in the Infrared, Appl. Phys. Lett. 92, 

261113/1-3 (2008). 

12. A. V. Zozulya, O. M. Yefanov, I. A. Vartanyants, K. Mundboth, C. Mocuta, T. H. 

Metzger, J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer, Imaging of nanoislands in 

coherent grazing-incidence small-angle x-ray scattering experiments, Phys. Rev. B 78, 

121304/1-4(R) (2008).

16 Publications Part A: Semiconductor Physics Group 

13. M. Meduna, J. Novak, G. Bauer, C. V. Falub, D. Grützmacher Interdiffusion in SiGe alloys 

with Ge contents of 25% and 50% studied by x-ray reflectivity, phys. stat. sol. (a) 

205, no. 110, p. 2441-2448 (2008). 

14. S. Danis, V. Holy, J. Stangl, G. Bauer, Diffuse x-ray scattering from graded SiGe/Si layers, 

Europhysics Letters 82, 66004/p1-p5 (2008). 

15. M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, N. Hrauda, W. Jantsch, F. Schäffler, 

G. Bauer, Quantitative determination of Ge profiles across SiGe wetting layers on Si 

(001), Appl. Phys. Lett. 93, 121901/1-3 (2008). 

16. Z. Zhong, P. Chen, Z. Jiang, G. Bauer, Temperature dependence of ordered GeSi island 

growth on patterned Si (001) substrates, Appl Phys. Lett. 93, 043106/1-3 (2008). 

17. A. Bonanni, A. Navarro-Quezada, Tian Li, M. Wegscheider, Z. Matej, V. Holy, R. T. 

Lechner, G. Bauer, M. Rovezzi, F. D'Acapito, M. Kiecana, M. Sawicki, T. Dietl, 

Controlled aggregation of magnetic ions in a semiconductor: an experimental 

demonstration, Phys. Rev. Lett. 101, 135502/1-4 (2008). 

18. K. Koike, T. Itakura, T. Hotei, M Yano, H. Groiss, G. Hesser, and F. Schäffler, Thermal 

precipitation of self-organized PbTe quantum dots in CdTe host matrix, physica status 

solidi (c) 5, 2746-2749 (2008). 

19. M. Schramboeck, A.M. Andrews, P. Klang, W. Schrenk, G. Hesser, F. Schäffler, and G. 

Strasser, InAs/AlGaAs QDs for intersubband devices, Superlattices and Microstructures 

44, 411-415 (2008). 

20. B. Sanduijav, D. Matei, G. Chen, F. Schäffler, G. Bauer, and G. Springholz, In situ 

scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si 

(001) substrates, Thin Solid Films 517, 293-296 (2008). 

21. T.M. Burbaev, V.S. Bagaev, E.A. Bobrik, V.A. Kurbatov, A.V. Novikov, M.M. Rzaev, 

N.N. Sibeldin, F. Schäffler, V.A. Tsvetkov, A.G. Tarakanov, and V.V. Zaitsev , Exciton 

condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructure, 

Thin Solid Films 517, 55-56 (2008). 

22. D. Pachinger, H. Lichtenberger, G. Chen, J. Stangl, G. Hesser, and F. Schäffler, MBE 

growth conditions for Si island formation on Ge (001) substrates, Thin Solid Films 517, 

62-64 (2008). 

23. L. Abtin, G. Springholz, Stabilization of PbSe quantum dots by ultra-thin EuTe and SrTe 

barrier layers, Appl. Phys. Lett. 93, 163102/1-3 (2008). 

24. T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, and W. Heiss, 

Temperature-dependent midinfrared photoluminescence of epitaxial PbTe/CdTe quantum 

dots and calculation of the corresponding transition energy, Phys. Rev. B 78, 165320/1-9 

(2008). 

25. V. Holy, R.T. Lechner, S. Ahlers, L. Horak, T.H. Metzger, A. Navarro-Quezada, A. 

Trampert, D. Bougeard, G. Bauer, Diffuse x-ray scattering from inclusions in 

ferromagnetic Ge1-xMnx layers, Phys. Rev. B 78, 144401/1-7 (2008). 

26. H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, 

K. Koike, T. Ikatura, T. Hotei, M. Yano, T. Wojtowicz, Size-controlled quantum dots 

fabricated by precipitation of epitaxially grown, immiscible semiconductor heterosystems, 

J. Phys.: Condens. Matter 20, 454216/1-4 (2008).


27. V. Holy, J. Stangl, R. T. Lechner, G. Springholz, X-ray scattering from periodic arrays of 

quantum dots, J. Phys.: Condens. Matter 20, 454215/1-6 (2008). 

28. C. Dais, G. Mussler, H. Sigg, T. Fromherz, V. Auzelyte, H. H. Solak, D. Grützmacher, 

Photoluminescence studies of SiGe quantum dot arrays prepared by templated selfassembly, 

Europhys. Lett 84, 67017/1-5 (2008). 

29. P. Rauter, T. Fromherz, S. Winnerl, M. Zier, A. Kolitsch, M. Helm, G. Bauer, Terahertz 

Si:B blocked-impurity-band detectors defined by nonepitaxial methods, Appl. Phys. Lett. 

93, 261104/1-3 (2008). 

30. E. Schierle, E. Weschke, A. Gottberg, W. Söllinger, W. Heiss, G. Springholz, G. Kaindl, 

Antiferromagnetic order with atomic layer resolution in EuTe(111) films, Phys. Rev. Lett. 

101, 267202/1-4 (2008). 

31. T. M. Lu, L. Sun, D. C. Tsui, S. Lyon, W. Pan, M. Mühlberger, F. Schäffler, J. Liu, Y. H. 

Xie, In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe 

quantum wells at 20 mK, Phys. Rev. B 78, 233309/1-4 (2008). 

32. P. Stadler, G. Hesser, T. Fromherz, G. J. Matt, H. Neugebauer, N. S. Sariciftci, Current 

filamentation and negative differential resistance in C60 diodes, phys. statt. sol. (b) 245, 

2300-2302 (2008). 

33. K. Forberich, G. Dennler, M. C. Scharber, K. Hingerl, T. Fromherz, C. Brabec, Performance 

improvement of organic solar cells with moth eye anti-reflection coating, Thin Solid 

Films 516, 7167-70 (2008). 

34. W. Schwinger, E. Lausecker, I. Bergmair, M. Grydlik, T. Fromherz, C. Hasenfuss, R. T. I. 

Schöftner, Fabrication of nano-gold islands with mm spacing using 2.5 dimensional 

PDMS stamps, Microelectronic Engineering 85, 1346-1349 (2008). 

35. V. Zozulya, O. M. Yefanov, I. A. Vartanyants, K. Mundboth, C. Mocuta, T. H. Metzger, 

J. Stangl, G. Bauer, T. Boeck, M. Schmidbauer, Imaging of nanoislands by coherent 

GISAXS experiments, ESRF Highlights 2008, 75-76 (2008). 

36. Bonanni, A. Navarro-Quezada, M. Wegscheider, Z. Matey, V. Holy, R. T. Lechner, G. 

Bauer, M. Rovezzi, F. D'Acapito, M. Kiecana, M. Sawicki, T. Dietl, Controlled Aggregation 

of magnetic cations in a semiconductor nitride matrix, ESRF Highlights 2008, 93-94 

(2008). 

37. M. Eibelhuber, T. Schwarzl, A. Winter, H. Pascher, W. Heiss, and G. Springholz, Midinfrared 

vertical-cavity surface-emitting lasers based on lead salt/BaF2 Bragg mirrors, 

Proc. SPIE 6900, 69000E (2008).

18 Publications Part A: Semiconductor Physics Group 

submitted 2008 / in print 

1. N. Hrauda, J.J. Zhang, J. Stangl, A. Rehman-Khan, G. Bauer, M. Stoffel, O. G. 

Schmidt, V. Jovanovich and L.K. Nanver, X-Ray Investigation of Buried SiGe Islands 

for Devices with Strain-Enhanced Mobility, J. Vac. Sci. Technology B, in print. 

2. N. Hrauda, J. J. Zhang, M. Stoffel, J. Stangl, G. Bauer, A. Rehman-Khan, V. Holy, 

O.G. Schmidt, V. Jovanovic, L.K. Nanver, X-ray diffraction study of the composition 

and strain fields in buried SiGe islands, Eur. Phys. J. Special Topics, in print.. 

3. M. Eibelhuber, T. Schwarzl, G. Springholz, W. Heiss, Lead salt microdisk lasers 

operating in continuous wave mode at 5.3 µm wavelength, Appl. Phys. Lett., in print. 

4. D. Matei, B. Sanduijav, G. Chen, G. Hesser, G. Springholz, Molecular beam epitaxy 

of Si/Ge nanoislands on stripe-patterned Si(001) substrates with different stripe 

orientations, J. Crystal Growth, in print. 

5. J. Stangl, Vermessung einzelner Nanoinseln, Physik in Unserer Zeit, in print. 

6. M.-I. Richard, V. Favre-Nicolin, G. Renaud, T. U. Schülli, C. Priester, Z. Zhong, T.- 

H. Metzger, Multiple scattering effects in strain and composition analysis of nanoislands 

by grazing incidence x-rays, Appl. Phys. Lett, in print. 

7. T. U. Schülli, G. Vastola, M.-I. Richard, A. Malachias, G. Renaud, F. Uhlik, F. 

Montalenti, G. Chen, L. Miglio, F. Schäffler, G. Bauer, Enhanced relaxation and 

intermixing in Ge islands grown on pit-patterned Si(001) substrates, Phys. Rev. Lett., 

in print. 

8. P. Rauter, T. Fromherz, C. Falub, D. Grützmacher, G. Bauer, SiGe quantum well 

infrared photodetectors on pseudosubstrate, Appl. Phys. Lett., in print. 

9. O. M. Yefanov, A. V. Zozulya, I. A. Vartanyants, J. Stangl, C. Mocuta, T. H. Metzger, 

G. Bauer, T. Boeck, M. Schmidbauer, Coherent diffraction tomography of 

nanoislands from grazing-incidence small-angle x-ray scattering, Appl. Phys. Lett., in 

print. 

A. Diaz, C. Mocuta, J. Stangl, B. Mandl, C. David, J. Vila-Comamala, V. Chamard, T. H. 

Metzger, G. Bauer, Coherent diffraction imaging of a single epitaxial InAs nanowire 

using a focused x-ray beam, Phys. Rev B, in print. 

10. P. Rauter, T. Fromherz, N. Q. Vinh´, B. N. Murdin, G. Mussler, D. Grützmacher, and 

G. Bauer, Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled 

Quantum Well Structures, Phys.Rev.Lett., in print. 

11. M.-I. Richard, N. A. Katcho, M. G. Proietti, H. Renevier, V. Favre-Nicolin, Z. Zhong, 

G. Chen, M. Stoffel, O. Schmidt, G. Renaud, T. U. Schülli, G. Bauer, Structural properties 

of Ge/Si(001) nano-islands by diffraction anomalous fine structure and multiwavelength 

anomalous diffraction, Eur. Phys. J. Special Topics, in print. 

12. M. Keplinger, T. Martensson, J. Stangl, E. Wintersberger, B. Mandl, D. Kriegner, V. 

Holý, G. Bauer, K. Deppert, L. Samuelson, Structural investigations of core - shell 

nanowires using Grazing Incidence X-Ray Diffraction, NanoLetters, in print.


13. V. Holy, J. Stangl, G. Bauer, Diffuse x-ray scattering from semiconductor nanostructures, 

In: "Diffuse Scattering in the 21st Century: Emerging Insights into Materials 

Structure and Behavior", eds.: R. Barabash and G. Ice, Oak Ridge National Laboratory, 

in print. 

14. F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. 

von Känel, E. Wintersberger, J. Stangl, G. Bauer, Raman spectroscopy determination 

of composition and strain in Si1-xGex/Si heterostructures, Microelectronic Engineering, 

in print. 

B. Sanduijav, D. Matei, G. Chen, G. Springholz, Surface evolution and island nucleation 

for Si/Ge growth on stripe-patterned Si (001) substrates studied by scanning tunnelling 

microscopy, Appl. Phys. Lett., submitted. 

15. T. Fromherz, J. Stangl, R. T. Lechner, E. Wintersberger, G. Bauer, V. Holy, C. Dais, 

E. Müller, H. Sigg, D. Grützmacher, 3D SiGe quantum dot crsytals: structural 

characterization and electronic coupling, International Journal of Modern Physics B, 

in print.. 

16. G. Springholz, A. Hallbauer, T. Schwarzl, G. Springholz, R. T. Lechner, Molecular 

beam epitaxy of PbSexTe1-x for strain engineering in IV-VI semiconductor 

heterostructures and multi quantum wells, Appl. Phys. Lett., submitted.

20 Talks and Presentations Part A: Semiconductor Physics Group 

Invited Talks 

Talks and Presentations 

1. G. Bauer, Shedding new light on semiconductor nanostructures: structural investigations 

using synchrotron radiation, 2nd International Vienna Symposium: Functional 

Matter: From designer materials to quantum technologies”, 27 June 2008, Vienna. (invited 

talk). 

2. G. Bauer, 3D SiGe quantum dot crystals: structural characterization and electronic 

coupling, 18th International Conference on High Magnetic Fields in Semiconductor 

Physics (HMF-18), Sao Pedro, Brasilien, 3 – 8 August, 2008. (invited talk). 

3. G. Bauer, Präsentation der Großforschungseinrichtung ESRF, Grenoble: 

Nanostrukturen in neuem Licht, Eröffnung der Ausstellung „NanoDialogue“, 

Veranstaltungsreihe „small is beautiful? große Wissenschaft – kleiner Maßstab“, 

Bundesministerium für Wissenschaft und Forschung Wien, Aula der Wissenschaften. 

22.04.2008. 

4. T. Fromherz, G. Matt, M. Bednorz , S.Zamiri , G. Goncalves , C. Lungenschmid, D. 

Meissner, N. S. Sariciftci, Fullerene sensitized silicon for near to mid infrared light 

detection, 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, 

Brazil, 27 July – 1 Aug. 2008 (invited talk). 

5. Martyna Grydlik, Moritz Brehm, Nina Hrauda, Thomas Fromherz, Friedrich Schäffler, 

Günther Bauer, Wetting layer investigations and efforts towards diffusion length determination 

in the SiGe system, University of Milano Bicocca, 7th July 2008 (invited 

talk) 

6. B. Mandl, J. Stangl, G. Bauer, E. Hilner, A. Mikkelsen, A. A. Zakharov, K. Deppert, 

L. Samuelson, M. Huber, SiOx-based growth of InAs1-xPx nanowires, 3rd Nanowire 

Growth Workshop 2008, Duisburg-Essen, 15.-16. Sept. 2008. 

7. B.Sanduijav, D. Matei, G. Chen, G. Springholz, In situ scanning tunneling microscopy 

studies of Ge nano island growth on stripe patterned Si (001) substrate templates, 7th 

International Workshop on Epitaxial Semiconductors on Patterned Substrates and 

Novel Index Surfaces, Les Arcenaulx, Marseille (France), 21-24 April 2008. 

8. G. Springholz, Epitaxial growth of self-assembled IV-VI semiconductor quantum dots, 

15th International Conference on Molecular Beam Epitaxy, 3.-8.8.2008, Vancouver, 

Canada. 

9. G. Springholz, Mid-Infrared Vertical Cavity Surface Emitting Lasers, 9th International 

Conference on Mid-Infrared Optoelectronic Materials and Devices, 7. – 11.9.2008, 

Freiburg, Germany. 

10. G. Springholz, Self-organization and Site-Controll of Semiconductor Nanostructures, 

Colloquium at the Univerisität Magdeburg, 1.4.2008, Magdeburg, Germany. 

11. J. Stangl, Investigation of semiconductor nanostructures by x-ray scattering methods, 

DESY research course New Materials in New Light, Hamburg, 06.03.2008. 

12. J Stangl, C Mocuta, K Mundboth, A Diaz, T H Metzger, G Bauer, A V Zozulya, O M 

Yefanov, I Vartanyants, X-ray diffarction from semiconductor nanostructures: beyond 

the ensemble average, IUMRS-ICEM 2008 Sydney, Australia, 31.07.2008.

Part A: Semiconductor Physics Group Talks and Presentations 21 

13. J. Stangl, Structural properties of self-organized semiconductor nanostructures, Inauguration 

Colloquium of the Karlsruhe Micro and Nano Facility, Forschungszentrum 

Karlsruhe, 14.11.2008. 

Conference Presentations (Talks and Posters) 


K. Koike, H. Harada, M. Yano, T. Wojtowicz, Size control and mid-infrared emission 

of epitaxial PbTe/CdTe quantum dots, 15th International Conference on Molecular 

Beam Epitaxy, Vancouver / CA, Aug. 3-8, 2008. (oral presentation). 

2. Pachinger, H. Groiss, H. Lichtenberger, F. Schäffler, M. Teuchtmann, Surfactantmediated 

reduction of wetting layer thickness during Si island formation on Ge (001) 

substrates, 15th International Conference on Molecular Beam Epitaxy, Vancouver / 

CA, Aug. 3-8, 2008. (oral presentation). 

3. W. Jantsch, H. Malissa, F. Schäffler, Z. Wilamowski, Spin-orbit effects in lowdimensional 

SiGe structures, 29th International Conference on the Physics of Semiconductors 

(ICPS-29), 27.7.-1.8.2008, Rio de Janeiro, Brazil. 

4. Hochreiner, H. Malissa, D. Pachinger, F. Schäffler, Z. Wilamowski, W. Jantsch, Mobility 

enhancement in modulation-doped SiGe quantum well structures, 29th International 

Conference on the Physics of Semiconductors (ICPS-29), 27.7.-1.8.2008, Rio de 

Janeiro, Brazil. 

5. Chen, V. Lavchiev, T. Fromherz, W. Heiss, H. Lichtenberger, C. Hesch, G. Bauer, F. 

Schäffler, W. Jantsch, Pre-patterning - a universal approach to achieve photonic 

strcutures based on ordered quantum dots on Si and SiO2 templates, 29th International 

Conference on the Physics of Semiconductors (ICPS-29), 27.7.-1.8.2008, Rio de 

Janeiro, Brazil. 

6. Dmytro Lugovyy and Gunther Springholz, Self-Assembled PbSeTe Quantum Dots: 

Tensile versus Compressive Strain, Cargèse Summer School “NanoSteps: Selforganized 

nanostructures on crystal surfaces“, June 30 – July 12, 2008, Cargèse, Corsica, 

France. 

7. Springholz, T. Schwarzl, M. Eibelhuber, W. Heiss, J. Fürst, H. Pascher (talk), Midinfrared 

vertical-cavity surface emitting lasers, Photonics West 2008, 18.-26.1.2008, 

San Jose, USA. 

8. M. Simma, D. Lugovyy, T. Fromherz, G. Springholz, G. Bauer, Strain modified optoelectronic 

properties of PbSe/PbTe quantum dots, 18th International Conference on 

High Magnetic Fields in Semiconductor Physics (HMF-18), Sao Pedro, Brasilien, 3 – 

8 August, 2008. (poster presentation). 

9. M. Eibelhuber, T. Schwarzl, G. Springholz, A. Winter, H. Pascher and W. Heiss, Midinfrared 

lasers based on high-reflectivity Bragg mirrors with very broad stop bands 

(poster), 14th International Winterschool on New Developments in Solid State Physics, 

18.-22.2.2008, Bad Hogastein, Austria.


10. G. Grabecki, K. A. Kolwas, J. Wrobel, K. Kapcia, R. Puzniak, E. Janik, M. Aleszkiweicz, 

T. Dietl, G.Springholz and G. Bauer (poster), Electron transport and magnetic 

susceptibility studies of In/PbTe hybrid nanostructures” 14th International Winterschool 

on New Developments in Solid State Physics, 18.-22.2.2008, Bad Hogastein, 

Austria. 

11. R. Kirschschlager, R. T. Lechner, G. Springholz, W. Heiss and G. Bauer (poster), 

Critical temperatures of ferromagnetic GeMnTe epilayers determined from the temperature 

dependent anomalous Hall effect, 14th International Winterschool on New 

Developments in Solid State Physics, 18.-22.2.2008, Bad Hogastein, Austria. 

12. T. Schwarzl, M. Eibelhuber, G. Springholz, and W. Heiss, (poster), High-reflectivity 

dual-band Bragg mirrors grown on Si(111) for the atmospheric windows between 4 - 

5 µm and 6 - 12 µm, 14th International Winterschool on New Developments in Solid 

State Physics, 18.-22.2.2008, Bad Hogastein, Austria. 

13. D. Matei, B. Sanduijav, G. Chen, F. Schäffler and G. Springholz (poster), In situ 

scanning tunneling microscopy study of Ge growth on prepatterned Si (001), 14th International 

Winterschool on New Developments in Solid State Physics, 18.-22.2.2008, 

Bad Hogastein, Austria. 

14. D. Lugovyy and G. Springholz (poster), The Phase Diagrams of Self-Assembled 

PbSeTe Quantum Dot Growth: Tensile versus Compressive Strain, 14th International 

Winterschool on New Developments in Solid State Physics, 18.-22.2.2008, Bad 

Hogastein, Austria. 


K. Koike, H. Harada, M. Yano, T. Wojtowicz (poster), Size control and midinfrared 

emission of epitaxial PbTe/CdTe quantum dot precipitates grown by molecular 

beam epitaxy, 14th International Winterschool on New Developments in Solid 

State Physics, 18.-22.2.2008, Bad Hogastein, Austria. 

16. G. Grabecki, K. A. Kolwas, J. Wróbel, K. Kapcia, R. Puźniak, E. Janik, M. Aleszkiewicz, 

T. Dietl, G. Springholz, and G. Bauer, In/PbTe superconductor/semiconductor 

interface properties studied by electron transport and magnetic 

susceptibility, Jasowiecz 2008. 

17. D. G. Matei, B. Sandujav, G. Chen, F. Schäffler and G. Springholz, In-situ STM studies 

of Ge growth on stripe-patterned Si-(001), NANOSTEPs School on Self-organized 

Nanostructures on Crystal Surfaces, 30.6.-12.7.2008 Cargese, Italy. 

18. Schwarzl, M. Eibelhuber, W. Heiss and G. Springholz (talk), MBE growth and characterization 

of optically pumped mid-infrared microdisk lasers operating in continuous-wave 

mode at 5.3 microns, 15th International Conference on Molecular Beam 

Epitaxy, 3.-8.8.2008, Vancouver, Canada. 


K. Koike, H. Harada, M. Yano, T. Wojtowicz (talk), Size control and mid-infrared 

emission of epitaxial PbTe/CdTe quantum dots, 15th International Conference on Molecular 

Beam Epitaxy, 3.-8.8.2008, Vancouver, Canada. 

20. R. Lechner, R. Kirchschlager, T. Schwarzl, G. Springholz and G. Bauer (talk), Crystallographic 

phase decomposition in the magnetic IV-VI semiconductor Ge1-xMnxTe 

grown by molecular beam epitaxy, 15th International Conference on Molecular Beam 

Epitaxy, 3.-8.8.2008, Vancouver, Canada.


21. R. Lechner, R. Kirchschlager, T. Schwarzl, G. Springholz and G. Bauer (poster), Tuning 

of the magnetic properties of the IV-VI semiconductor GeMnTe, 29th International 

Conference on the Physics of Semiconductors, 27.7.-1.8.2008, Rio de Janeiro, Brazil. 

22. Söllinger, R. Lechner, K. Rumpf, P. Granitzer, H. Krenn, G. Springholz and W. Heiss 

(poster), Distance dependence of exchange interactions in europium monochalcogenide 

magnetic semiconductors, 29th International Conference on the Physics of 

Semiconductors, 27.7.-1.8.2008, Rio de Janeiro, Brazil. 

23. R. Kirchschlager, R. T. Lechner, G. Springholz, W. Heiss and G. Bauer, (poster), 

Critical temperatures of ferromagnetic GeMnTe epilayers determined from temperature 

and magnetic field dependent transport measurements, 29th International Conference 

on the Physics of Semiconductors, 27.7.-1.8.2008, Rio de Janeiro, Brazil. 

24. W. Heiss, H. Groiss, E. Kaufmann, T. Schwarzl, G. Springholz, G. Hesser, F. Schäffler, 

K. Koike, H. Harada, M. Yano, T. Wojtowicz, Tuning the mid-infrared emission 

of epitaxial PbTe/CdTe quantum dot precipitates by controlling the size, ICNNS-2008, 

05.05.-07.05.2008, 

25. M. Eibelhuber, T. Schwarzl, W. Heiss, G. Springholz (talk), Optically pumped midinfrared 

IV-VI microdisk lasers operating in continuous-wave at 5.3 μm, 9th International 

Conference on Mid-Infrared Optoelectronics: Materials and Devices, 7.- 

11.9.2008, Freiburg, Germany. 

26. T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, and W. Heiss 

(poster), Epitaxial PbTe/CdTe quantum dots for the mid-infrared: Temperature dependent 

photoluminescence and calculation of the corresponding transition energy, 

9th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, 

7.-11.9.2008, Freiburg, Germany. 

27. S. Kriechbaumer, T. Schwarzl, H. Groiss, W. Heiss, T. Wojtowicz, and G. Springholz 

(poster), Widely tunable and intense mid-infrared PL emission from epitaxial 

Pb(Sr)Te quantum dots in a CdTe matrix, 9th International Conference on Mid- 

Infrared Optoelectronics: Materials and Devices, 7.-11.9.2008, Freiburg, Germany. 

28. T. Schwarzl, M. Eibelhuber, W. Heiss, G. Springholz, MBE growth and characterization 

of optically pumped mid-infrared microdisk lasers operating in continuous-wave 

mode at 5.3 microns, 15th International Conference on Molecular Beam Epitaxy, 

Vancouver / CA, Aug. 3-8, 2008. (oral presentation). 

29. N. Hrauda, J.J. Zhang, M. Stoffel, J. Stangl, G. Bauer, A. Rehman-Khan, V. Holy, 

O.G. Schmidt, V. Jovanovic and L.K. Nanver, X-Ray Diffraction Study Of The Composition 

And Strain Fields In Buried SiGe Islands, 10th International Conference on 

Surface X-ray and Neutron Scattering (SXNS10), July 2-5, 2008, Paris, F. (poster). 

30. J. J. Zhang, N. Hrauda, M. Stoffel, J. Stangl, A. Rastelli, O. G. Schmidt, V. Jovanovic, 

L. K. Nanver, G. Bauer, Strained Silicon layers on two-dimensionally ordered SiGe islands, 

15th International Conference on Molecular Beam Epitaxy, Vancouver / CA, 

Aug. 3-8, 2008. (oral presentation). 

31. Z. Zhong, P. Chen, G. Bauer, Z. Jiang, Temperature-dependent ordering of GeSi islands 

on patterned Si (001) substrates, 15th International Conference on Molecular 

Beam Epitaxy, Vancouver / CA, Aug. 3-8, 2008. (oral presentation).


32. Sanduijav, D. Matei, G. Chen, G. Hesser, G. Springholz, In-situ Scanning Tunneling 

Microscopy Studies of Ge Nanoisland Growth on 1D-Stripe Patterned Si (001) Substrates, 

15th International Conference on Molecular Beam Epitaxy, Vancouver / CA, 

Aug. 3-8, 2008. (oral presentation). 

33. G. Chen, G. Bauer, W. Jantsch, L. Miglio, D. Pachinger, F. Schäffler, G. Vastola, Selfassembled 

Si1-xGex nanowires on Si(1 1 10) substrates, 15th International Conference 

on Molecular Beam Epitaxy, Vancouver / CA, Aug. 3-8, 2008. (oral presentation). 

34. Julian Stangl, Bernhard Mandl, Virginie Chamard, Mario Keplinger, Thomas Martensson, 

Cristian Mocuta, Ana Diaz, Till H Metzger, Guenther Bauer, Local Probe Xray 

Diffraction from Single Nanowires, MRS Fall Meeting 2008 Boston/USA, 

04.12.2008. 

35. B. Mandl, J. Stangl, T. Mårtensson, E. Hilner, Alex Zacharov, A. Mikkelsen, G. 

Bauer, L. Samuelson, and K. Deppert SiOx based growth of InAs1-xPx nanowires, 29th 

International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 27 

July – 1 Aug. 2008 (oral presentation). 

36. N. Hrauda, J. Zhang, M. Stoffel, J. Stangl, A. Rehman Khan, O. G. Schmidet, V. 

Jovanovic, L. K. Nanver, X-Ray Investigation of Buried SiGe Islands for Devices with 

Strain-Enhanced Electron Mobility, 2008 International Conference on Nanoscience & 

Technology (ICN+T), 21 – 25 July 2008, Keystone, Colorado, USA (oral presentation). 

37. N. Hrauda, J.J. Zhang, M. Stoffel, J. Stangl, G. Bauer, A. Rehman-Khan, V. Holy, 

O.G. Schmidt, V. Jovanovic, L. K. Nanver, X-ray diffraction study of the composition 

and strain fields in SiGe islands capped with Si and SiNx, 9th Biennial Conference on 

High Resolution X-Ray Diffraction and Imaging, University of Linz, Austria, September 

15-19, 2008. (Poster). 

38. S. Danis, V. Holy, J. Stangl, G. Bauer, Diffuse x-ray scattering from graded SiGe/Si 

layers, 9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, 

University of Linz, Austria, September 15-19, 2008. (Poster). 

39. M. Keplinger, D. Kriegner, B. Mandl, M. Mårtensson, J. Stangl, G. Bauer, X-Ray 

based characterisation of nanowires, 9th Biennial Conference on High Resolution X- 

Ray Diffraction and Imaging, University of Linz, Austria, September 15-19, 2008. 

(Poster). 

40. M. Meduna, O. Caha, M. Keplinger, G. Bauer, G. Mussler, D. Grützmacher, Interdiffusion 

in Ge rich SiGe alloys studied by in-situ diffraction, 9th Biennial Conference on 

High Resolution X-Ray Diffraction and Imaging, University of Linz, Austria, September 

15-19, 2008. (Poster). 

41. Navarro-Quezada, T. Li, R.T. Lechner, Z. Matej, V. Holy, B. Faina, M. Wegscheider, 

G. Bauer, A. Bonanni, X-ray powder diffraction studies of Fe-rich phases in 

(Ga,Fe)N, 9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, 

University of Linz, Austria, September 15-19, 2008. (Poster). 

42. R. T. Lechner, V. Holy, S. Ahlers, D. Bougeard, T. H. Metzger, N. Hrauda, E. Wintersberger, 

A. Navarro-Quezada, G. Bauer, Topotaxial relationship with a cubic Ge 

lattice, 9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, 

University of Linz, Austria, September 15-19, 2008. (Poster).


43. M. Ul-Hassan, R. T. Lechner, G. Springholz, H. Groiss, R. Kirchschlager, G. Bauer, 

Structural properties of ferromagnetic Ge1-xMnxTe grown by molecular beam epitaxy, 

9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, University 

of Linz, Austria, September 15-19, 2008. (Poster). 

44. R. T. Lechner, R. Kirchschlager, T. Schwarzl, G. Springholz, G. Bauer, Tuning of the 

magnetic properties of the IV-VI semiconductor GeMnTe, 29th International Conference 

on the Physics of Semiconductors, Rio de Janeiro, Brazil, 27 July – 1 Aug. 2008 

(poster presentation). 

45. M. Bergmair, G. Bauer, K. Hingerl, Surface plasmons and Kramers-Kronig relations 

in thin films and photonic crystals, 29th International Conference on the Physics of 

Semiconductors, Rio de Janeiro, Brazil, 27 July – 1 Aug. 2008 (poster presentation). 

46. M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, F. Schäffler, W. Jantsch, G. 

Bauer, Study of sub-0.1-monolayer dependence of Ge/Si wetting layer instability and 

the island nucleation on unpatterned and patterned Si substrates, 26-30 May 2008, 

Strasbourg, France. 

47. M. Brehm, M. Grydlik, H. Lichtenberger, N. Hrauda , T. Fromherz, W. Jantsch, F. 

Schäffler, G. Bauer, Determination of Ge Profiles in the Wetting Layer and Ge Transfer 

to the Islands Based on Growth Studies with Sub-0.05 Monolayer Precision, 

Nanoelectronic Days 2008, Aachen, May 13-16, 2008. (oral presentation). 

48. M. Grydlik, M. Brehm, H. Lichtenberger, N. Hrauda, T. Fromherz, W. Jantsch, F. 

Schäffler, G. Bauer, SiGe wetting layer to island transformation: systematic study on 

a sub-0.05 monolayer Ge coverage scale, 15th International Conference on Molecular 

Beam Epitaxy, Vancouver / CA, Aug. 3-8, 2008. (oral presentation). 

49. P. Rauter, T. Fromherz, N. Vinh, G. Mussler, D. Grützmacher, G. Bauer, Continuous 

Voltage Tonability of Intersubband Relaxation Times in SiGe Quantum Well Structures, 

29th International Conference on the Physics of Semiconductors, Rio de Janeiro, 

Brazil, 27 July – 1 Aug. 2008 (oral presentation, IUPAP Young Author Best 

Paper Award). 

50. Martyna Grydlik, Moritz Brehm, , Herbert Lichtenberger, Thomas Fromherz, Wolfgang 

Jantsch, Friedrich Schäffler, Guenther Bauer, SiGe wetting-layer-to-island transition 

resolved with sub-0.1-monolayer resolution on unpatterned and patterned Si 

substrates, 5th International Conference on Semiconductor Quantum Dots (QD2008), 

Gyeongju, Korea, 11.-16.05.2008. (oral presentation). 

51. M. Brehm, M. Grydlik, H. Lichtenberger, N. Hrauda, T. Fromherz, W. Jantsch, F. 

Schaffler, and G. Bauer, Quantitative investigations of the SiGe wetting layer - island 

transition with sub - 0.1 monolayer resolution, 29th International Conference on the 

Physics of Semiconductors, Rio de Janeiro, Brazil, 27 July – 1 Aug. 2008. (oral presentation). 

52. T. Fromherz, M. Brehm, M. Grydlik, H. Lichtenberger, T. Suzuki, Z. Zhong, N. 

Hrauda,J. Stangl, S. Birner, F. Schäffler, G. Bauer, Bandstructure and photoluminescence 

of SiGe islands on patterned and unpatterned substrates, 29th Conference on 

the Physics of Semiconductors, Jul 27-Aug, 2008, Rio de Janeiro, Brazil. 

53. P. Rauter, T. Fromherz, G. Bauer, N.Q. Vinh, G. Mussler,D. Grützmacher , Voltage 

Tunability of Intersubband Lifetimes in SiGe Quantum Well Structures, 15th International 

Winterschool on New Developments in Solid State Physics (Mauterndorf 2008) 

18 - 22 Feb, 2008, Bad Hofgastein, Austria.


54. Elisabeth Lausecker, Yifei Huang, Prof. Sigurd Wagner, Prof. James C. Sturm, Multilevel 

Mold for Top-Gate TFT Fabrication by using Self-Aligned Imprint Lithography, 

The 7th International Conference on Nanoimprint and Nanoprint Technology, Kyoto, 

Japan, Oct. 13-15, 2008. (oral presentation).

Part A: Semiconductor Physics Group Funding 27 

Funded Research Projects 

Projects funded by „Fonds zur Förderung der Wissenschaftlichen 

Forschung (FWF)” (Austrian Science 

Foundation) 

P17436-N08 

”STM Untersuchung von ortskontrollierten SiGe Nanoinseln” 

1. Dec. 2004 – 30. Nov. 2008 

Project leader: G. Springholz 

P18125-N16 

“Untersuchung von Versetzungen in Halbleiterepischichten“ 

1. Jan. 2006 – 31. Dec. 2008 

Project leader: J. Stangl 

P 18942-N20 

“Auf GeMnTe basierende ferromagnetische Halbleiterstrukturen” 

1. Aug. 2006 – 31. Juli 2010 

Project leader: R. Lechner 

F 2512-N08 

“IR Emission and Detection by Group IV Nanostructures” 

(part of SFB025 Infrared Optical Nanostructures: IRON) 

01. March 2005 – 29. Febr. 2009 

Project leader: T. Fromherz 

F 2502-N08 

“SiGe Nanostructures” 

(part of the SFB Infrared Optical Nanostructures IRON) 

01. March 2005 – 29. Febr. 2009 

Project leader: F. Schäffler 

F 2504-N08 

“Epitaxial Lead Salt Nanostructures” 


01. March 2005 – 29. Febr. 2009 


F 2507-N08 

“Next Generation X-ray Techniques” 


01. March 2005 – 29. Febr. 2009 

Project leader: J. Stangl, G. Bauer 

P 20970-N20 

Quantenpunkt-Nanoprezipitate in Halbleiter-Heterostrukturen 

01. February 2009-31. January 2012 

Project leader: G. Springholz

28 Funding Part A: Semiconductor Physics Group 

I80-N20 

“FONE-SPINTRA” 

01.01.2007 – 31.12.2009 


Projects funded by „Österreichische Forschungsförderungsgesellschaft 

(FFG)” 

1. Project Cluster Nanostructured Surfaces and Interfaces (NSI) 

1. März 2007 – 28. February 2009 

Coordinator: F. Schäffler 

2. Contract no. 815802/1301-BI 

NILquantumdot – High density, large area, ordered nanostructures on templates defined 

by nano imprint lithography for optoelectronic applications 

In the FFG project cluster contract no. 815802/1300-A NILaustria – Nanoimprint Lithography 

in Austria: enabling emerging high added value applications (Österreichische 

NANO Initiative) 

Participants: Universität Linz, PROFACTOR GmbH Linz 

01.04.2008 – 31.03.2011. 


3. Contract no. 815829: 1352-BII: 

NILstampreplication 

Participants: EV Group E. Thallner, Schärding, A; IMS Nanofabrication AG, Vienna, A; 

Universität Linz, A; Profactor GmbH, Steyr, A; Austrian Research Centers, Vienna, A. 

01.04.2008 – 31.03.2011. 


4. Contract no. 818046/16555 

B1: Lichtabsorption und Photovoltaik organisch-anorganischer Halbleitergrenzflächen 

(LIPOAH) 

Participants: Universität Linz, A; Konarka Austria Forschungs- und Entwicklungs GmbH, 

Linz, A. 

01.08.2008 – 31.07.2011. 

Project leader: T. Fromherz

Part A: Semiconductor Physics Group Funding 29 

Projects funded by the European Community 

1. EC contract No. NMP4-CT-2004-500101 

Self-Assembled Semiconductor Nanostructures for New Devices in Photonics and Electronics 

(SANDIE) 

Participants: Katholieke Universiteit Leuven, B; Universiteit Antwerpen, B; Technische 

Universität Berlin, D; Lunds Universitet, Lund, S; Technische Universiteit Eindhoven, 

NL; University of Sheffield, UK; University of Nottingham, UK; Heriot-Watt University, 

Edinburgh, UK; Centre National de la Recherche Scientifique, Paris, F; Institut-Nationaldes-Sciences-Appliquées 

de Rennes, F; Université Paris-Sud XI, F; Consiglio Nazionale 

delle Ricerche – Instituto dei Materiali per lÈlettronica e il Magnetismo, Parma, I; Universidade 

de Aveiro, Portugal; Universitat de Valencia Estudi General, Valencia, Spain; Universidad 

de Cadiz, Spain; Bookham Technology PLC, Abingdon, UK; Universität Dortmund, 

D; AIXTRON AG, Aachen, D; Consejo Superior de Investigaciones Científicas, 

Madrid, Spain; Technische Universität Wien, A; Toshiba Research Europe Ltd, Cambridge, 

UK; A.F. Ioffe Physico-Technical Institute, St. Petersburg, RU; Fritz-Haber- 

Institut der Max-Planck-Gesellschaft, Berlin, D; NSC Nanosemiconductors GmbH, Dortmund, 

Germany; Johannes Kepler University, Linz, A; 

01 July 2004 – 30 June 2008. 

Project leader: Günther Bauer 

2. EC contract no. 012150 

“Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits” (D-DOT 

FET) 

Participants: Paul Scherrer Institut (PSI) Villigen, CH; Technische Universiteit Delft, NL, 

Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., München, D; Universität 

Linz, Austria; Universita’ degli Studi di Milano – Bicocca, Milano, Italy; Technische Universität 

Wien, Austria; STMicroelectronics (Crolles2) SAS, Crolles, France. 

01 Oct. 2005 – 30 Sept. 2008. 

Project leaders: Günther Bauer, Julian Stangl. 

3. EC contract No. 214814 

“Architectures, Materials and One-dimensional Nanowires for Photovoltaics – Research 

and Applications” (AMON-RA) 

Participants: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschunge.V., 

München, D; Eidgenössische Technische Hochschule Zürich, CH; SOL VOLTAICS AB, 

Lund, Sweden; Danmarks Tekniske Universitet, Kongens Lyngby, Danmark; Universität 

Linz. 

01. Oct. 2008 – 30. Sept. 2012. 

Project leaders: Günther Bauer, Julian Stangl.

30 Funding Part A: Semiconductor Physics Group 

Projects funded by „Gesellschaft für Mikroelektronik” 

1. “Clean Room Linz” 

01 Jan. 2008 – 31 Dec. 2008 

(a part of this amount supporting the group of Prof. W. Jantsch) 

Project Leader: G. Brunthaler

Part A: Semiconductor Physics Group Organizational, Public Work 31 

Extramural Activities 

Gesellschaft für Mikroelektronik (GMe) 

Günther Bauer is vice president of the GMe for the period Jan 2008 to Dec 2008. 

The GMe Vienna supports University-based high technology research in the areas of semiconductor 

technology, microelectronics, optoelectronics, and sensors in Austria. In 2003 the 

funding provided by the Ministerium für Verkehr, Innovation und Technologie for the GMe 

to the institutions at the Technical University of Vienna and at the Johannes Kepler University 

Linz was crucial for maintaining the research infrastructure at the clean rooms. This seed 

money helped to acquire additional funds through a number of projects, which in their total 

amount exceeded the seed money spent by the GMe by about a factor of eight. Quite a number 

of contributions in this annual report would not have been possible without the support 

from GMe. 

The activities of the GMe are documented in the annual report available under the web address 

http://gme.tuwien.ac.at. 

Industrial Collaborations 

1. ST Microelectronics, Crolles, France (within the framework of d-DOT FET), 

2. SOL VOLTAICS AB, Lund, Sweden (within the framework of AMON-RA). 

3. Profactor GmbH, Steyr, Austria (within NSI and PLATON) 

4. EVG GmbH, Schärding, Austria (within PLATON) 

5. Tiger Coatings GmbH, Wels, Austria (within NSI) 

6. ELECTROVAC GmbH, Klosterneuburg, Austria (within NSI) 

7. SCL Sensor GmbH, Wien, Austria (within NSI) 

Conference Organization: 

Conference Organizations 

� 9th Biennial Conference on High Resolution X-Ray Diffraction and Imaging (X-TOP 

2008), Universität Linz, 15.-19. September 2008, Conference Chair: Julian Stangl.

32 Organizational, Public Work Part A: Semiconductor Physics Group 

Patents: 

”Einsatz organischer / inorganischer Grenzflächenzustände zur Infrarotdetektion”, Patent no 

AT 503 818 B1 2008-01-15 

Awards: 

“IUPAP Young Author Best Paper Award“ to DI Patrick Rauter (Iinternational Conference on 

the Physics of Semiconductors 2008, July 27 – August 1, 2008, Rio de Janeiro, Brazil). 

“Austrian Nano Award” to DI Elisabeth Lausecker (studied partly at Princeton University, 

Princeton, NJ, USA) 

Education 

G. Brunthaler, “Creation of new examples for local competitions of the Physics Olympiade in 

Austria”, April 2008. 

News Coverage 

Broadcast report on XTOP Tagung: Ö Regional OÖ., Kulturjournal, 17.09.2008, 18:00 (5 

min). 

TV report on XTOP Tagung: ORF2 OÖ, 16.09.2008, 19:00 (OÖ heute), 2 min. Beitrag. 

J. Stangl, “Extra tiefe Röntgenblicke”, newspaper article in „Oberösterreichische 

Nachrichten“, 27.09.2008, p. 004 (2008). 

Broadcast report on XTOP Interview Peter Fratzl: Ö1 Dimensionen , 26.09.2008, 19:05 (ca 

10 min). 

Broadcast report on XTOP Interview Franz Pfeiffer: Ö1 Dimensionen , 03.10.2008, 19:05 (ca 

10 min). 

„Ein Physiker auf dem Fußballfeld“ (über Vortrag Prof. Metin Tolan, 05.06.2008). 

„Neue Erkenntnisse in Röntgenbeugung – schneller mit Halbleitern“ (Univ.Ass. Dr. Julian 

Stangl) in: JKU Univationen 1/08, S. 15. 

„IUPAP Young Author Best Paper Award“ (DI Patrick Rauter), JKU Univationen 3/08, S. 20. 

„XTOP-PhysikerInnen an der JKU“, JKU Univationen 04/08, S. 20. 

„ZONA: Brücke zwischen angewandter Forschung und Grundlagenforschung“, Campus 

News November 2008, S. 13. 

„Mit Röntgenstrahlen bis in das einzelne Molekül“ (X-TOP 2008), Campus News November 

2008, S. 20.

Part B 

Abteilung Festkörperphysik 

– 

Solid State Physics Group

Part B: Solid State Physics Group Personnel 35 

Personnel 

The scientific-personnel structure of the solid state physics group consist of: 

o 2 permanent professor positions (granted by ministry of science) 

o 3 permanent scientific member positions (granated by ministry of science) 

o 2 non-permanent scientific member positions (granted by ministry of science) 

o 10 non-permanent scientific member positions (granted by FWF, ÖNB, BMfFWK), 

o 5 permanent positions for technical and supporting staff 

Thus, for each scientific staff member granted by ministry of science on average 1 non- 

permanent research position was acquired through granted research projects. 

Scientific staff 

Researchers funded by ministry of science 

name degree position 

Wolfgang Jantsch Dr. Univ.-Prof. 

Reinhold Koch Dr. Univ.-Prof. 

Wolfgang Heiß Doz. Dr. Ao.-Prof. 

Helmut Sitter Doz. Dr. Ao.-Prof. 

Alberta Bonanni Doz. Dr. Univ.-Ass. 

Stefan Müllegger Dr. Univ.-Ass. 

Graduate (PhD) students 


Shaima Abd Al Baqi M.Sc. Austrian Exchange Service 

Tanveer Ashraf M.Sc. Austrian Exchange Service 

Joachim Achleitner DI 

Eugen Baumgartner DI FWF 

Maryna Bodnarchuk M.Sc. FWF 

Martin Eibelhuber DI FWF 

Bogdan Faina M.Sc. FWF 

Marek Havlicek M.Sc. WiMi 

Erich Kaufmann 1 DI FWF 

Raimund Kirchschlager DI FWF 

Ventsislav Lavchiev M.Sc. FWF 

Andrea Navarro-Quezada M.Sc. Scholarship from Mexico 

1 until 07/2008

36 Personnel Part B: Solid State Physics Group 

Stefan Pichler DI FWF 

Jürgen Roither DI FWF 

Gerardo Hernández Sosa M.Sc. Scholarship from Mexico 

Faisal Siraj M.Sc. Scholarship from Pakistan 

Walter Söllinger DI FWF 

Mujeeb Ullah M.Sc. Austrian Exchange Services 

Mathias Wegscheider DI FWF 

Maksym Yarema 1 M.Sc. FWF 

Post docs 


Gang Chen Dr. FWF 

Yanfang Hu Dr. FWF 

Tian Li Dr. FWF 

Hans Malissa Dr. FWF 

Thomas Schwarzl Dr. FWF 

Clemens Simbrunner Dr. FWF 

Diploma students 

name graduated 

Astrid Hochreiner 20.11.2008 

Markus Humer 16.12.2008 

Stefan Minniberger 

Martin Quast 07.07.2008 

Harald Schwinghammer 

Günther Schwabegger 

30.09.2008 

Technical and support staff 

name position 

Svetlana Andreeva laboratory technician 

Elisabeth Burgstaller physics laboratory assistant 

1 since 05/2008

Part B: Solid State Physics Group Personnel 37 

Johanna Firmberger 1 physics laboratory assistant 

Otmar Fuchs technician 

Josef Jägermüller mechanic 

Ekkehard Nusko electronics engineer 

Antonia Praus 2 physics laboratory assistant 

Evelyn Rund administration 

Bianca Wegschaider apprentice 

Visiting researchers 

name home institution 

Mykhailo Sytnyk Institut of Inorganic Chemistry, Univ. Chernivtsi 

Tatjana Djuric TU Graz – Austria 

Ivan Hotovy TU Bratislava – Slovakia 

Jozef Liday TU Bratislava – Slovakia 

Hanka Przybylinska IFPAN Warschau – Poland 

Franz Schauer University of Zlin, Czech Republic 

Peter Vogrincic Slovak University of Technology, Dept. of 

Microelectronics – Slovakia 

Prof.Dr.Zbyslav Wilamowski IFPAN Warschau – Poland 

Hilde Hartdegen Forschungszentrum Jülich – Germany 

Mauro Rovezzi European Synchrotron Radiation Facility, Grenoble, France 

Thomas Höfler Karl Franzens Universität Graz 

Prof. Dr. Tomasz Dietl IFPAN Warschau 

Prof. Dr. Almal K. Das Indian Institute of Technology, Kharagpur 

1 04/2008 

2 Until 03/2008

38 Personnel Part B: Solid State Physics Group 

Research visits of institute members 

name visit to 

Alberta Bonanni IFPAN Warsaw, Poland 

Andrea Navarro-Quezada European Synchrotron Radiation Facility (ESRF, Grenoble) 

Bogdan Faina IFPAN Warsaw, Poland 

Clemens Simbrunner Slovak University of Technology 

Gerardo Hernández Sosa 

TU – Graz 

Slovak University of Technology 

Shaimaa’ Abd Al-Baqi Montanuniversität Leoben 

Stefan Minniberger University of Cagliari, Italy 

Maksym Yarema University Chicago, USA 

Maryna Bodnarchuk University Chicago, USA

Part B: Solid State Physics Group Research Overview 39 

Research Overview 

The main scientific activities at the Solid State Physics Division concern the fabrication, characterization 

and modification of semiconductors, ferromagnetic/semiconductor herero- and 

nanostructures, oligomers, polymers and metals as well as the development of novel devices 

with special focus on epitaxy, optics and spectroscopy, spin- and magnetoelectronics applications 

and ion implantation. The material system investigated and the available experimental 

techniques are listed below: 

Materials presently under investigation (in random order): 

◦ Nanocrystals from CdSe/ZnS, PbSe, PbS, SnTe, Metal-ferrites 

◦ Oligomers 

◦ GaN, InGaN, AlGaN, (Ga,Fe)N, (Ga,Mn)N 

◦ PbTe, EuTe, EuSe, Cd/PbTe, PbSe, Pb1-xSrxSe 

◦ Si, SiGe, GaAs, InAs 

Experimental facilities and techniques (alphabetical order): 

Growth 

◦ Chemical synthesis 

◦ Hot wall epitaxy 

◦ Metal organic vapor phase epitaxy 

◦ Molecular beam epitaxy 

◦ Seeded growth 

Ex-situ characterization 

◦ Atomic force microscopy 

◦ Deep level transient spectroscopy 

◦ Electron microscopy 

◦ Electron spin resonance 

◦ Ellipsometry 

◦ Fourier spectroscopy 

◦ Photoluminescence & excitation spectroscopy 

◦ Raman spectroscopy 

◦ Scanning electron microscopy 

◦ Transport and photoconductivity measurements 

◦ Transmission electron microscopy 

In situ characterization 

◦ Cantilever beam magnetometer 

◦ Reflection difference spectroscopy 

◦ Laser reflectometry

40 Research Overview Part B: Solid State Physics Group 

◦ Low energy electron diffraction (LEED) 

◦ Reflection high energy electron diffraction (RHEED) 

◦ Scanning tunneling microscopy (STM) 

◦ Spectroscopic ellispometry 

Simulation 

◦ Magnetic phase diagrams 

◦ Photonic structures

Part B: Solid State Physics Group Theses 41 

Diploma and Doctoral Theses 

Habilitation finished 2008 

Alberta Bonanni 

“Acceptors and magnetic ions in wide gap semiconductors – homogeneous doping vs. superstructures 

formation” 

Completed May 2008 

Diploma theses finished in 2008 

Martin Quast 

“Transport phenomena in Fe-doped GaN” 

(Supervisor: A. Bonanni) 

Harald Schwinghammer 

“Photoconductivity of nanocrystals and nanowires” 

(Supervisor: W. Heiss) 

Markus Humer 

“Substrates for surface enhanced Raman scattering” 


Astrid Hochreiner 

“Electron Spin Resonance in low diemensional semiconductor systems” 

(Supervisor: W. Jantsch) 

Current diploma theses 

Günther Schwabegger 

“Herstellung und Charakterisierung von Paryleneschichten” 

(Supervisor: H. Sitter) 

Stefan Minniberger 

“Time resolved laser spectroscopy on colloidal nanocrystal heterostructures” 


Doctoral thesis finished in 2008 

Mag. Erich Kaufmann 

“Highly luminescent PbTe/CdTe quantum dots fabricated by lattice-type mismatched 

epitaxy” 

(Supervisor: W. Heiss)

42 Theses Part B: Solid State Physics Group 

Current doctoral theses 

M.Sc. Shaima'a Abd Al-Baqi 

“Growth and Characterization of Rubrene Layers“ 


Dipl.Ing. Joachim Achleitner 

“Simulation magnetooptischer Effekte in EuTe“ 


M.Sc. Tanveer Ashraf 

“Growth and magnetism of epitaxial heusler-films on GaAs (001) “ 

(Supervisor: H. Sitter, R. Koch) 

Dipl. Ing. Eugen Baumgartner 

“Optoelectronic devices based on nanocrystals” 


Mag. Maryna Bodnarchuk 

“Shape controlled core/shell nanocrystals for mangetic applications” 


Dipl. Ing. Martin Eibelhuber 

“Novel IV-VI light emitting devices” 


M.Sc. Bogdan Faina 

“Effect of strong p-d coupling on the Curie temperature of Fe-doped p-type GaN” 


M.Sc. Marek Havlicek 

“Current induced Spin Resonance in systems with spin orbit interaction.” 

(Supervisor:W. Jantsch) 

Dipl. Ing. Raimund Kirchschlager 

“Magnetotransport and magnetooptical properties of GeMnTe” 


M.Sc. Ventsislav Lavchiev 

“Si-based photonic structures” 

(Supervisor: W. Jantsch) 

M.Sc. Andrea Navarro-Quezada 

“Magnetic nanostructures on nitride surfaces for spintronics applications” 


Dipl. Ing. Stefan Pichler 

“Mid infrared laserspectroscopy for molecule detection” 


Part B: Solid State Physics Group Theses 43 

Dipl.Ing. Jürgen Roither 

“Light emitting nanodevices: Novel concepts and their realization” 


Dipl. Ing. Walter Söllinger 

“Monte Carlo simulations of spin-related phenomena in magnetic semiconductor structures” 


M.Sc. Gerardo Hernandez Sosa 

“Growth and Characterization of selforganised organic nanostructures” 


M.Sc. Mujeeb Ullah 

“Organic Field Effect Transistors based on C60 layers grown by Hot Wall Epitaxy” 


Dipl.Ing. Matthias Wegscheider 

“Optical characterization of transition metal doped ferromagnetic nitrides” 


M.Sc.Maksym Yarema 

“Nanocrystals for infrared laser applications” 


44 Publications Part B: Solid State Physics Group 

published 2008 

Publications 

1. E. Schierle, E. Weschke, A. Gottberg, W. Söllinger, W. Heiss, G. Springholz, 

G. Kaindl 

Antiferromagnetic Order with Atomic Layer Resolution in EuTe(111) Films 

Phys. Rev. Lett. 101, 267202 (2008). 

2. M. Eibelhuber, T. Schwarzl, A. Winter, H. Pascher, W. Heiss, G. Springholz 

Mid-infrared vertical-cavity surface-emitting lasers based on lead salt/BaF2 Bragg 

mirrors 

Proceedings of SPIE 6900, 69000E (2008). 

3. M. Böberl, M. V. Kovalenko, G. Pillwein, G. Brunthaler, W. Heiss 

Quantum Dot Nanocolumn Photodetectors for Light Detection in the Infrared 

Appl. Phys. Lett. 92, 261113/1-3 (2008). 

4. Bonanni, A. Navarro-Quezada, Tian Li, M. Wegscheider, Z. Matej, V. Holy, 

R. T. Lechner, G. Bauer, M. Rovezzi, F. D'Acapito, M. Kiecana, M. Sawicki, T. Dietl 

Controlled aggregation of magnetic ions in a semiconductor: an experimental demonstration 

Phys. Rev. Lett. 101, 135502/1-4 (2008). 

5. M. Brehm, M. Grydlik, H. Lichtenberger, T. Fromherz, N. Hrauda, W. Jantsch, 

F. Schäffler, G. Bauer 

Quantitative determination of Ge profiles across SiGe wetting layers on Si (001) 

Appl. Phys. Lett. 93, 121901/1-3 (2008). 

6. G. Chen, G. Vastola, H. Lichtenberger, D. Pachinger, G. Bauer, W. Jantsch, 

F. Schäffler, L. Miglio 

Ordering of Ge islands on hill-patterned Si (001) templates 

Appl. Phys. Lett. 92, 113106-1/3 (2008). 

7. V. Rinnerbauer, H.-J. Egelhaaf, K. Hingerl, P. Zimmer, S. Werner, T. Warming, 

A. Hoffmann, M. Kovalenko, W. Heiss, G. Hesser, F. Schäffler 

Energy transfer in close-packed PbSe nanocrystal films 

Phys. Rev. B 77, 085322-1/9 (2008). 

8. T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, W. Heiss 

Temperature dependent mid-infrared photoluminescence of epitaxial PbTe/CdTe 

quantum dots and calculation of the corresponding transition energy 

Phys. Rev. B 78, 165320 (2008). 

9. J. Roither , M. V. Kovalenko, W. Heiss 

Highly efficient (infra)-red-conversion of InGaN light emitting diodes by nanocrystals, 

enhanced by color selective mirrors 

Nanotechn. 19, 355205 (2008).

Part B: Solid State Physics Group Publications 45 

10. E. V. Shevchenko, M. Bodnarchuk, M. V. Kovalenko, D. V. Talapin, R. K. Smith, 

S. Aloni, W. Heiss, A. P. Alivisatos 

Gold(Core)-Iron Oxide (Hollow Shell) Nanoparticles 

Adv. Mater. 20, 4323 (2008). 

11. M. V. Kovalenko*, D. V. Talapin, M. A. Loi, F. Cordella, G. Hesser, M. I. Bodnarchuk, 

W. Heiss 

Quasi-seeded growth of ligand-tailored PbSe nanocrystals through cation-exchange 

mediated nucleation 

Angewandte Chemie 47, 3029 (2008). 

12. K. P. Hewaparakrama, S. Mackowski, H. E. Jackson, L. M. Smith, W. Heiss, 

G. Karczewski 

Tuning spin properties of excitons in single CdTe quantum dots by annealing 

Nanotechn. 19, 125706 (2008). 

13. Z. Wilamowski, W. Ungier, Wolfgang Jantsch 

Current- versus electric-field-induced electron spin resonance in a two dimensional 

electron gas 

Phys. Rev. B78, 174423 (2008). 

14. W. Jantsch, Z. Wilamowski 

Spin properties of confined electrons in Si 

Spin-related Effects in Semiconductors ed by: M. Dyakonov, Springer Series in 

SOLID-STATE SCIENCES 157 (2008).ISSN 0171-1873. 

15. Tian Li, C. Simbrunner, M. Wegscheider, A. Navarro-Quezada, M. Quast, A. Bonanni 

GaN: δ-Mg grown by MOVPE: structural properties and their effect on the electronic 

and optical behavior 

J. Cryst. Growth 310, 13 (2008). 

16. W. Pacuski, P. Kossacki, D. Ferrand, A. Golnik, J. Cibert, M. Wegscheider, 

A. Navarro-Quezada, A. Bonanni, M. Kiecana, M. Sawicki, T. Dietl 

Influence of strong coupling between holes and localized spins on exchange splitting 

of excitons in (Ga,Fe)N 


17. C. Simbrunner, A. Kharchenko, A. Navarro-Quezada, M. Wegscheider, M. Quast, 

Tian Li, A. Bonanni, J. Bethke, K. Lischka, H. Sitter 

In situ monitoring of periodic structures during MOVPE of III-nitrides 


18. A. Navarro-Quezada, Tian Li, C. Simbrunner, M. Kiecana, G. Hernandez-Sosa, M. 

Quast, M. Wegscheider, M. Sawicki, T. Dietl, A.Bonanni 

Fe ontoGaN(0001) grown in a full MOVPE process 

J. Cryst. Growth 310, 1772 (2008).


19. M. Morana, M. Wegscheider, A. Bonanni, N. Kopidakis, S. Shaheen, D. M. Scharber, 

Z. Zhu, D. Waller, R. Gaudiana, C. Brabec 

Bipolar charge transport in PCPDTBT-PCBM bulk-heterojunctions for photovoltaic 

applications 

Adv. Func. Mat. 18, 1757 (2008). 

20. J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vincze, I. Vavra, A. Satka, G. Ecke, A. 

Bonanni, J. Breza, C. Simbrunner, B. Plochberger 

Investigation of NiOx-based contacts on p-GaN 

J. Mater. Sci: Mater. Electron. 19, 855 (2008). 

21. T. Li, C. Simbrunner, A. Navarro-Quezada, M. Wegscheider, M. Quast, D. Litvitov, 

D. Gerthsen, A. Bonanni 

Phase-dependent distribution of Fe-rich nanocrystals in MOVPE-grown (Ga,Fe)N 


22. M. Wegscheider, C. Simbrunner, Tian Li, R. Jakiela, A. Navarro-Quezada, M. Quast, 

H. Sitter, A. Bonanni 

Periodic Mg distribution in GaN: -Mg and the effect of annealing on structural and 

optical properties 

Appl. Surf. Sci. 255, 731 (2008). 

23. A. Bonanni, A. Navarro-Quezada, Tian Li, M. Wegscheider, Z. Matej, V. Holy, R.T. 

Lechner, G. Bauer, M. Kiecana, M. Sawicki, T. Dietl 

Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration 


24. M. Wegscheider, Tian Li, A. Navarro-Quezada, B. Faina, A. Bonanni, W. Pacuski, 

R. Jakiela, and T. Dietl 

Effects of magnetic ions on optical properties: the case of (Ga, Fe)N', J. 

Phys.: Condens. Matter 20, 454222 (2008). 


K. Koike, T. Ikatura, T. Hotei, M. Yano, T. Wojtowicz 

Size-controlled quantum dots fabricated by precipitation of epitaxially grown, immiscible 

semiconductor heterosystems 

J. Phys.: Condens. Matter 20, 454216 (2008). 

26. F. Quochi, M. Saba, F. Cordella, A. Gocalinska, R. Corpino, M. Marceddu, A. 

Anedda, A. Andreev, H. Sitter, N. S. Sariciftci, A. Mura, G. Bongiovanni 

Temperature tuning of lasing threshold in self-assembled oligophenyl nanofibers under 

nanosecond optical excitation 

Adv. Mat., 2008 DOI.10.1002/adma.20080059.


27. H. Sitter, R. Resel, G. Koller, M. G. Ramsey, A. Andreev, C. Teichert 

Fundamentals of organic film growth and characterization in Organic Nanostructures 

for Next Generation Devices 

Springer Series in Materials Science 101; K. Al-Shamiri, H.-G. Rubahn, H. Sitter 

(Eds.), (Springer Berlin 2008), pp. 3-19. 

28. H. Sitter 

Hot-Wall Epitaxial Growth of Films of conjugated molecules in Organic Nanostructures 

for Next Generation Devices 

Springer Series in Materials Science 101, K. Al-Shamiri, H.-G. Rubahn, H. Sitter 

(Eds.), (Springer Berlin 2008), pp. 89 -119. 

submitted 2008 / in print 

1. V. Holy, R.T. Lechner, S. Ahlers, L. Horak, T.H. Metzger, A. Navarro-Quezada, A. 

Trampert, D. Bougeard, G. Bauer 

Linear temperature dependence of the conductivity in Si two-dimensional electrons 

near the apparent metal-to-insulator transition 

Phys. Rev. B, in print. 

2. D. Pachinger, H. Lichtenberger, G. Chen, J. Stangl, G. Hesser, F. Schäffler 

MBE growth conditions for Si island formation on Ge (001) substrates 

Thin Solid Films, in print. 

3. B. Sanduijav, D. Matei, G. Chen, F. Schäffler, G. Bauer, G. Springholz 

In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pitpatterned 

Si (001) substrates 

Thin Solid Films, in print. 

4. H. Przybylinska, M. Havlicek, K. Swiatec, W. Jantsch 

Ferromagnetic Precipitates in Oxygen Cantaminated GaN:Fe 

International Journal of Modern Physics B World Scientific Publishing Company. 

5. H. Malissa, Z. Wilamowski, W. Jantsch 

Coupled plasmon-cyclotron resonance in ultra-high mobility bulk silicon 

Proc. ICPS 29, Rio de Janeiro, submitted. 

6. A. Hochreiner, H. Malissa, D. Pachinger, F. Schäffler, Z. Wilamowski, W.Jantsch 

Two-Dimensional Plasmons in Si/SiGe quantum well structures and carrier mobility 

Proc. ICPS 29, Rio de Janeiro, submitted. 

7. Z. Wilamowski, H. Malissa, W. Jantsch 

Tuning of Spin Resonance by an Electric Current In a Si Quantum Well 

Materials Science-Poland, Vol. 26, No. 4, 2008, in print.


8. Mihai Irimia-Vladu, Nenad Marjanovic, Angela Vlad, Alberto Montaigne Ramil, Gerardo 

Hernandez-Sosa, Reinhard Schwödiauer, Siegfried Bauer and Niyazi Serdar 

Sariciftci 

Vacuum processed polyaniline – C60 organic field effect transistors 

Advanced Materials, 2008, in print. 

9. G. Hernandez-Sosa, C. Simbrunner, T. Höfler, A. Moser, O. Werzer, B. Kunert, 

G.Trimmel, W.Kern, R.Resel, H. Sitter 

Modification of Para-sexiphenyl layer growth by UV induced polarity changes of 

polymeric substrates 

Chemistry of Materials, submitted. 

10. G. Hernandez-Sosa, C. Simbrunner, T. Höfler, A. Moser, O. Werzer, B. Kunert, 

G. Trimmel, W. Kern, R. Resel, H. Sitter 

Para-sexiphenyl layers grown on light sensitive polymer substrates 

Proceedings of the EMRS spring meeting 2008, accepted. 

11. Mujeeb Ullah, Th. B. Singh, G. J. Matt, C. Simbrunner, G. Hernandez-Sosa, 

S. N. Sariciftci, H. Sitter 

Temperature dependence of charge Transport in C60 based Organic 


12. Sh. M. Abd Al-Baqi, G. Hernandez-Sosa, H. Sitter, B. Th. Singh, Ph. Stadler, 

N. S. Sariciftci 

Rubrene thin film characteristics on mica substrates 


13. A. Kadashchuk, Yu. Skryshevski, I. Beynik, Ch. Teichert, G. Hernandez-Sosa, 

H. Sitter, A. Andreev, P. Frank, A. Winkler 

Spectroscopy of defects in epitaxially grown para-sexiphenyl nanostructures 


14. T. Djuric, H.G. Flesch, M. Koini, Sh. M. Abd Al-Baqi, H. Sitter, R. Resel 

Structural properties of rubrene thin films grown on mica surfaces 


15. A. Paez, Sh. M. AbdAl-Baqi, G. Hernandez-Sosa, A. Andreev, Ch. Winder, 

F. Padinger, C. Simbrunner, H. Sitter 

Crystalline stages of rubrene films probed by Raman spectroscopy 


16. G. Hlawacek, Xiao Ming He, Sh. Abd Al-Baqi, H. Sitter, Ch. Teichert 

Rubrene on mica: from the early growth stage to a late crystallisation 

Proceedings of the EMRS spring meeting 2008, accepted.


17. Kadashchuk, Yu. Skryshevski, Yu. Piryatinski, I. Beynik, C. Teichert, G. Hernandez- 

Sosa, H. Sitter, A. Andreev, P. Frank, A. Winkler 

Origin of the low-energy emission band in epitaxially grown para-sexiphenyl 

nanocrystallites 

J. Chem. Phys. submitted June 2008. 

18. M. Eibelhuber, T. Schwarzl, G. Springholz, W. Heiss 

“Lead salt microdisk lasers operating in continuous wave mode at 5.3 µm wavelength” 

Appl. Phys. Lett., in print.

50 Talks and Presentations Part B: Solid State Physics Group 

Invited Talks 


A. Bonanni 

“Origin and control of ferromagnetism in magnetically doped nitrides. The case of (Ga,Fe)N”, 

5th International Workshop on Nitride Semiconductors (IWN 2008), Montreux - Switzerland, 

6-10.10.2008 

A. Bonanni 

"Fermi-level engineering and effect on the magnetic properties of (Ga,Fe)N", 29th International 

Conference on the Physics of Semiconductors (ICPS 29), Rio de Janeiro - Brazil, 

27.07 – 01.08.2008 

A. Bonanni 

“Fermi-level engineering and resolution of magnetic nanostructures in (Ga,Fe)N” 

International Workshop on High Temporal and Spatial Resolution Studies of Magnetic 

Nanostructures (6th Framework Programme of the EU Marie Curie Action Transfer of 

Knowledge), Augustow - Poland, 27.06-02.07.2008 

A. Bonanni 

“Ferromagnetism in nitrides: from single impurities to multi-component functional systems”, 

Photonics West 2008 – OPTO, San Josè – California, 19-24.01.2008 

A. Bonanni 

“Origin and control of ferromagnetism in magnetically doped nitrides. The case of (Ga,Fe)N”, 

GMe Forum 2008 (Society for Micro-and Nanoelectronics), Vienna - Austria, 13-14.11.2008 

A. Bonanni 

“Ferromagnetism in magnetically doped semiconductors.” 

The case of (Ga,Fe)N”, Istituto di Struttura della Materia - CNR, Roma - Italy,19.12.2008 

W. Heiss 

“Colloidal nanocrystals for electronic applications” 

Colloquium at the Zernike Institute for Advanced Materials, University of Groningen, The 

Netherlands (5. June 2008) 

G. Springholz, T. Schwarzl, M. Eibelhuber, W. Heiss, J. Fürst, A. Winter, H. Pascher 

“IV-VI Vertical Cavity Surface Emitting Lasers” 

9th International Conference on Mid-Infrared Optoelectronics: Materials and Devices 

(MIOMD-IX), Freiburg, Germany, September 7 – 11, 2008 

G. Springholz, D. Lugovyy, L. Abtin, M. Simma, H. Groiss, G. Hesser, F. Schäffler, S. 

Kriechbaumer, E. Kaufmann, T. Schwarzl, W. Heiss, G. Bauer, K. Koike, H. Harada, M. 

Yano, T. Wojtowicz 

“Strain Engineering of Self-Assembled IV-VI Semiconductor Quantum Dots” 

15th International Conference on Molecular Beam Epitaxy (MBE 2008), Vancouver, Canada, 

August 3 – 8, 2008

Part B: Solid State Physics Group Talks and Presentations 51 

W. Jantsch, H. Malissa, F. Schäffler and Z. Wilamowski 

“Spin-orbit effects in low-dimensional SiGe structures” 

29 th Int. Conf. Physics of Semiconductors, Rio de Janeiro, July 2008 

Z. Wilamowski, W. Ungier, H. Malissa, F. Schäffler, W. Jantsch 

“Controlling spins in a Si quantum well” 

18th International Conference on High Magnetic Fields in Semiconductor Physics and 

Nanotechnology - HMF 18, Sao Pedro/SP (Brazil), Aug 3-8, 2008 

Conference Presentation (Talks and Posters) 

A. Navarro-Quezada, Tian Li, M. Kiecana, B. Faina, M. Quast, M. Wegscheider. M. Sawicki, 

T. Dietl, A. Bonanni 

MOVPE growth and characterization of Fe-rich nanocrystals in Fe/GaN and (Ga,Fe)N 

ISGN-2, Second International Symposium on Growth of III-Nitrides, Laforet Shuzenji, Izu – 

Japan, 06-09.07.2008 

M. Wegscheider, T. Li, M. Kiecana, M. Quast, A. Navarro-Quezada, B. Faina, C. Simbrunner, 

M. Sawicki, T. Dietl, A. Bonanni 

Photoluminescence Studies of Si- and Mg-Doped (Ga,Fe)N: Effects of Fe Incorporation on 

the Optical Response 

Jaszowiec 2008, XXXVII International School and Conference on the Physics of Semiconducting 

Compounds, Jaszowiec – Poland, 07-13.06.2008 

A. Navarro-Quezada, Tian Li, M. Wegscheider, M. Quast, and A. Bonanni, M. Kiecana, M. 

Sawicki, T. Dietl 

Fermi level engineering and tuning of the spinodal decomposition in MOVPE (Ga,Fe)N 

ICMOVPE XIV, 14th International Conference on Metal Organic Vapor Phase Epitaxy, 

Metz - France, 01-06.06.2008 

A. Bonanni, A. Navarro-Quezada, Tian Li, Z. Matej, V. Holý, M. Kiecana, M. Sawicki, 

T. Dietl 

Control of selforganized magnetic nanocrystals aggregation in (Ga,Fe)N by co-doping with 

shallow donors and acceptors 

APS 2008, Annual March Meeting of the American Physical Society, New Orleans, 

Louisiana – USA, 10-14.03.2008 

Mauterndorf 2008 

(15 th International Winterschool on New Developments in Solid State Physics), Bad Hofgastein 

– Austria , 18-22.02.2008 

“Fe onto GaN(0001) grown in a full MOVPE process” 

A. Navarro-Quezada, Tian Li, G. Hernandez-Sosa, and A. Bonanni, M. Kiecana, M. Sawicki, 

T. Dietl 

“Fermi-level engineering and tuning of the spinodal decomposition in (Ga,Fe)N” 

A. Navarro-Quezada, Tian Li, M. Quast, M. Wegscheider, B. Faina, and A. Bonanni, 

M. Kiecana, M. Sawicki, T. Dietl


XTOP 2008 

(9 th Biennial Conference on High Resolution X-Ray Diffraction and Imaging), Linz – Austria 

, 15.19.09.2008 

“Synchrotron x-ray powder diffraction of Fe-rich phases in (Ga,Fe)N” 

A. Navarro-Quezada, Tian Li, R.T. Lechner, Z. Matej, V. Holy, B. Faina, M. Wegscheider, G. 

Bauer, A. Bonanni 

M. Eibelhuber, T. Schwarzl, W. Heiss, G. Springholz 

Optically pumped mid-infrared IV-VI microdisk lasers operating in continuous-wave at 5.3 

microns 



S. Kriechbaumer, T. Schwarzl, H. Groiss, W. Heiss, T. Wojtowicz, G. Springholz 

Widely tunable and intense mid-infrared PL emission from epitaxial Pb(Sr)Te quantum dots 

in a CdTe matrix 



T. Schwarzl, E. Kaufmann, G. Springholz, K. Koike, T. Hotei, M. Yano, W. Heiss 

Epitaxial PbTe/CdTe quantum dots for the mid-infrared: Temperature dependent photoluminescence 

and calculation of the corresponding transition energy 



J. Roither, M. V. Kovalenko, W. Heiss 

Highly efficient (infra)-red-conversion of InGaN light emitting diodes by nanocrystals, enhanced 

by color selective mirrors 

Optics+Photonics, Eighth International Conference on Solid State Lighting, 

San Diego, California, USA, August 10-14 (2008) 

T. Schwarzl, M. Eibelhuber, W. Heiss, G. Springholz, 

MBE growth and characterization of optically pumped mid-infrared microdisk lasers operating 

in continuous-wave mode at 5.3 microns 

15th International Conference on Molecular Beam Epitaxy 

Vancouver, Canada, August 3 – 8 (2008) 

H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, K. 

Koike, H. Harada, M. Yano, T. Wojtowicz 

Size control and mid-infrared emission of epitaxial PbTe/CdTe quantum dots: 

15th International Conference on Molecular Beam Epitaxy 

Vancouver, Canada, August 3 – 8 (2008) 

W. Heiss, M. Böberl, M. V. Kovalenko, S. Gamerith, E. J. W. List 

Inkjet printed nanocrystal photodetectors operating up to 3 m wavelength 

NaNaX3, Nanoscience with Nanocrystals 

Lecce, Italy, Mai 21-23 (2008) 

M. I. Bodnarchuk, M. V. Kovalenko, R. T. Lechner, G. Hesser, F. Schäffler, W. Heiss 

Shape-controlled synthesis of iron oxide nanocrystals using fatty acid salts as stabilizers


NaNaX3, Nanoscience with Nanocrystals 

Lecce, Italy, Mai 21-23 (2008) 

K. Szendrei, A. Gocalinska, F.Cordella, M. V. Kovalenko, G. Bongiovanni, W. Heiss, 

P. W. M. Blom, M. A. Loi 

Organic/inorganic hybrids for photodetectors 

E-MRS 2008 Spring Meeting, Advanced organic and/or inorganic functional materials, 

Congress Center, Strasbourg, France, May 26 – 30 (2008) 

T. Raucha, M. Böberl, M. Kovalenko, S. Tedde, E. Zausa, O. Hayden, U. Lemmer, J. Fürst, 

W. Heiss, 

Organic photodetectors sensitized with PbS nanocrystals for the near-infrared 

Organic Optoelectronics and Photonics, Photonics Europe, 

Strasbourg, France, April 7-11 (2008) 

R. T. Lechner, R. Kirchschlager, T. Schwarzl, G. Springholz, W. Heiss, G. Bauer 

Ferromagnetic Ge1-xMnxTe epilayers 

Symposium on Magnetic Excitations in Semiconductors, Buffalo, NY, USA, March 6 – 8, 

2008 

T. Rauch, M. Böberl, M. Kovalenko, S. Tedde, U. Lemmer, J. Fürst, W. Heiss, O. Hayden, 

Near Infrared Sensitivity of PbS Quantum Dot Sensitized Organic Photodiodes 

72. Annual Meeting of the DPG and DPG Spring Meeting of the Condensed Matter Division 

Berlin, February 25-29 (2008) 

M. Humer, W. Heiss 

Silver nanorods on nanoporous alumina substrates for enhanced Raman scattering 

15 th International Winterschool on New Developments in Solid State Physics 

Bad Hofgastein, Austria, February 18-22 (2008) 

S. Pichler, J. Roither, M. V. Kovalenko, W. Heiss 

Highly directional and narrowband emission from colloidal nanocrystals in vertical microcavities 



J. Roither, M. V. Kovalenko, W. Heiss 

Dielectric mirror enhanced (infra)-red-conversion of InGaN light emitting diodes by colloidal 

nanocrystals 



M. Eibelhuber, T. Schwarzl, G. Springholz, A. Winter, H. Pascher, W. Heiss 

Mid-infrared lasers based on high-reflectivity Bragg mirrors with very broad stop bands 



T. Schwarzl, M. Eibelhuber, G. Springholz, W. Heiss 

High-reflectivity dual-band Bragg mirrors grown on Si(111) 

for the atmospheric windows between 4 - 5 µm and 6 - 12 µm




R. Kirchschlager, R. T. Lechner, G. Springholz, W. Heiss, G. Bauer 

Critical temperatures of Ge(1-x)Mn(x)Te epilayers determined by the temperature dependent 

anomalous Hall coefficient 



H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, K. 

Koike, H. Harada, M. Yano, T. Wojtowicz 

Size control and mid-infrared emission of epitaxial PbTe/CdTe quantum dot precipitates 

grown by molecular beam epitaxy 



M. Niedermayr, G. Brunthaler, M. Kovalenko, W. Heiss 

Electrical Conductivity of HgTe Nanocrystals 



G. Springholz, T. Schwarzl, M. Eibelhuber, W. Heiss, J. Fürst, H. Pascher 

Mid-infrared vertical-cavity surface emitting lasers 

Photonics West – Optoelectronics 2008, San Jose, USA, January 19 - 24, 2008 

R. T. Lechner, G. Springholz, T. Schwarzl, R. Kirchschlager, G. Bauer 

Crystallographic phase decomposition in the magnetic IV-VI semiconductor GeMnTe grown 

by molecular beam epitaxy 

15 th International Conference on Molecular Beam Epitaxy (MBE 2008), Vancouver, Canada, 

August 3 – 8, 2008 

W. Heiss, H. Groiss, E. Kaufmann, T. Schwarzl, G. Springholz, G. Hesser, F. Schäffler, K. 

Koike, T. Hotei, M. Yano, T. Wojtowicz 

Tuning the mid-infrared emission of epitaxial PbTe/CdTe quantum dot precipitates by controlling 

their size 

15 th International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 

2008), Natal, Brazil, August 3 – 8, 2008 

R. T. Lechner, R. Kirchschlager, T. Schwarzl, G. Springholz, G. Bauer 

Tuning of the Magnetic Properties of the IV-VI Semiconductor GeMnTe 

29 th International Conference on the Physics of Semiconductors (ICPS 2008), Rio de Janeiro, 

Brazil, July 27 – August 1, 2008


S. Kriechbaumer, T. Schwarzl, H. Groiss, W. Heiss, T. Wojtowicz, G. Springholz 

Widely Tunable and Intense Mid-Infrared PL Emission from Epitaxial Pb(Sr)Te Quantum 

Dots in a CdTe Matrix 

GMe Forum, Vienna, Austria, November 13-14, 2008 

R. Seyrkammer, J. Roither , M. V. Kovalenko, W. Heiss 

Efficient color conversion of III-V light emitting diodes by nanocrystals 

GMe Forum, Vienna, Austria, November 13-14, 2008 

G. Chen, M. V. Kovalenko, M. I. Bodnarchuk, V. Lavchiev, J. Roither, C. Hesch, W. Heiss, 

W. Jantsch 

Fabrication and characterization of CdSe colloidal nanocrystal ring resonator on SiO2 substrate 

E-MRS Spring Meeting, Strasbourg, France, May 26-30, 2008 

H. Malissa, Z. Wilamowski, W. Jantsch 

Coupled plasmon-cyclotron resonance in ultra-high mobility bulk silicon 


A. Hochreiner, H. Malissa, D. Pachinger, F. Schäffler, Z. Wilamowski, W. Jantsch 

Mobility enhancement in modulation-dped SiGe quantum well structures 


G. Chen, V. Lavchiev, T. Fromherz, W. Heiss, H. Lichtenberger, C. Hesch, G. Bauer, 

F. Schäffler, W. Jantsch 

Pre-patterning – a universal approach to achive photonic structures based on ordered 

quantum dots on Si and SiO2 templates 


M. Brehm, M.Grydlik, H. Lichtenberger, N. Hrauda, T. Fromherz, W. Jantsch, F. Schäffler, 

G. Bauer 

Quantitative investigations of the SiGe wetting layer – island transition with sub – 0.1 

monolayer resolution 


H. Przybyliñska, M. Havlicek, A. Navarro-Quezada, A. Bonanni, W. Jantsch 

Ferromagnetic precipitates in O contaminated GaN:Fe 

18th International Conference on High Magnetic Fields in Semiconductor Physics and 

Nanotechnology - HMF 18, Sao Pedro/SP (Brazil), Aug 3-8, 2008 

H. Malissa, Z. Wilamowski, W. Jantsch 

Current induced g-factor shift in modulation doped Si quantum wells 

Int. Symposium on Spin-phenomena in reduced dimensions, Regensburg Sept. 24-26 (2008) 

W. Jantsch, H. Malissa, A. Hochreiner, M. Hawlicek, G. Chen, Z. Wilamowski 

Spin Properties of confined Electrons 

58 th annual Conference of the Austrian Physical Society, 22-26 Sept. 2008, Leoben (Austria)

56 Funded Research Projects Part B: Solid State Physics Division 

Funded Research Projects 

Projects funded by “Fonds zur Förderung der Wissenschaftlichen 

Forschung (FWF)” (Austrian Science Foundation) 

1. F 2505-N08 

“Nanocrystals for mid-infrared photonics” 


01. March 2005 – 29. Febr. 2009 

Project leader: W. Heiß 

2. P18320-N07 

“Ion-beam modification of cuprate superconductors” 

Okt. 2005 – Okt. 2008 

Project leader: W.Lang (Univ. Wien) 

Cooperation: L. Palmetshofer 

3. S9701-N08 

“Coordination of NFN – Interface Controlled and 

Functional Organic Films” 

Feb. 2006 – Jan. 2012 

Project leader: H. Sitter 

4. S9706-N08 

“Organic Fims Grown by HWE” 

Feb. 2006 – Jan. 2012 


5. S9710-N08 

“Organic Solar Cells” 

Feb. 2006 – Jan. 2009 


6. L303-N08 

“Compakte vertikal emittierende Infrarotlaser” 

May 2005 – Apr. 2010 

Project leader: T. Schwarzl 

7. P20065-N20 

“Kontrollierte Bildung von magnetischen Nanokristallen in DMS” 

Jan. 2008 – Dec. 2009 

Project leader: A. Bonanni 

8. P20650-N20 

“Heusler-Legierungsschichten auf Halbleiter-Substraten” 

March 2008 – Febr. 2011 

Project leader: R. Koch 

9. P20773-N20 

“ESR-STM von organischen Nanoadsorbaten auf Silizium”

Part B: Solid State Physics Group Funded Research Projects 57 

June 2008 – Febr. 2012 

Project leader: R. Koch 

10. P20550-N20 

“Spin Eigenschaften von eingeschränkten Elektronen” 

March 2008 – Febr. 2011 

Project leader: W. Jantsch 

11. Nanoiniziative Austria 

“Met Clust Project” 

01. March 2006 – 28. Febr. 2009 

Part-Project leader: A.Bonanni 

12. FWF 1103 N 

“Nanoinitiative Austria - Verbundprojekt Platon 1100 - Silicon Nanophotonics” 

March 2007 – Feb. 2009 

Project leader: W. Jantsch 

13. FWF N110-NAN 

“Shape controlled Nanocrystals for optoelectronic applications” 

March 2007 – Feb. 2009 

Project leader: W. Heiss 

Projects funded by the European Community 

1. European Research Council (ERC) 

Advanced Grant 

“Functionalisation of diluted magnetic semiconductors – Fun DMS” 

01. Jan. 2009 – 31. Dec. 2013 

Local coordinator: A. Bonanni 

Projects funded by ”Bundesministerium für Verkehr, Innovation 

und Arbeit” 

1. START-Preis, Projekt Nr. Y179 

“Nanobauteile für Einzelmolekül-Spektroskopie im mittleren Infrarot” 

1. July 2002 - 31. June 2008 

Project leader: W. Heiß

58 Funded Research Projects Part B: Solid State Physics Division 

Projects funded by “ÖAD ” and “Foreign Institutions” 

NanoQUIT 

Deutsches Bundesministerium für Bildung und Forschung 

Unterprojekt zum BMBF-Projekt des Paul-Drude-Instituts 

01.10.2007 – 31.12.2008 

Subauftragnehmer: R. Koch 

Wissenschaftlich-Technische-Zusammenarbeit 

Österreich-Ukraine (Project Nr. UA 01/2007) 

Inst. of Physics of National Academy of Sciences of Ukraine, 

Dept. “Photoactivity”. 

Project Parnter: H.Sitter 

Wissenschaftlich-Technische-Zusammenarbeit 

Österreich-Tschechien (Project: 13/2006) 

Thomáš Bat’a University in Zlin, Polymer Centre; 

Project Partner: H. Sitter 

Austrian Exchange Service 

Agency for International Cooperation in Education and Research 

- M.Sc. Shaimaa Abd Al Baqi – Irak 

- M.Sc. Ullah Mujeeb – Pakistan 

- M.Sc. Tnaveer Ashraf – Pakistan 

PhD Scholarship in Basic & Natural Sciences 


PhD Scholarship Program Mexico – Conacyd 

- M.Sc. Gerardo Hernandez-Sosa 


PhD Scholarship Program Mexico – Conacyd 

- M.Sc. Andrea Navarro-Quezada 

Project Partner: A. Bonanni

Part B: Solid State Physics Group Organizational, Public Work 59 

Extramural Activities 

Wolfgang Jantsch organized as chairman the E-MRS 2008 Spring Meeting, held in Strasbourg 

(France), from May 26 to May 30, 2008 

Helmut Sitter organized as chairman the Symposium O 

“Interface controlled organic thin films” at the spring meeting of the E-MRS in Strasbourg, 

26.-30.05.2008, France 

Details can be found at: http://www.emrs-strasbourg.com 

Alberta Bonanni was elected as member of the Editorial Board of Semiconductor Science 

and Technology: http://www.iop.org/EJ/journal/-page=board/0268-1242 

NEWS COVERAGE 

Press Release by FWF on occasion of the publication of 2 Science papers as output of the 

NFN “Interface controlled and functionalized organic films”. 

“Nanoscience: Weak Force Strong Effect” 

cited by 42 scientific oriented internet provider 

1. PANalytical 

Almelo, NL 


Industrial Collaborations 

2. Siemens AG, Corporate Technology, Materials & Manufacturing 

Innovative Electronics, Erlangen, Germany 

Project Partner: W. Heiß and K. Hingerl 

3. W.L. Gor & Associates GmbH 

Putzbrunn, Germany 

Project Partner: W. Heiß 

4. IMS Nanofabrication 

Projekt Partner: W. Jantsch

Part C 

Christian Doppler Laboratory for 

Surface Optical Methods 

(CDLOOM)

Part C: CD Laboratory Personnel 63 

Personnel 

The scientific staff at Christian Doppler Laboratory for Surface Science Methods is solely 

paid by research grants: 

University Personnel 

Kurt Hingerl 

Project Personnel 

Univ. Prof. Dipl. Ing. Dr. Head of the CDLOOM 


Martin Arndt 1 Dr. CDG 

Michaela Böberl 2 DI Dr. CDG 

Employed PhD students 

name degree funding graduated 

Michael Bergmair DI CDG 

Babak Dastmalchi 3 M. Sc. CDG 

Roman Holly DI CDG 

Hessam Habibian 4 M. Sc. EU 

Reihaneh Jannessary M. Sc. EU 

Thomas Plach 5 DI Profactor 

Saeed Zamiry M. Sc. EU 

Ahmad Saeed M. Sc. ÖAD- HEC- Pacistan 

Employed MSc. students 

name MSc. /DI thesis funding 

Klaus Nöbauer started July 2008 CDG 

Thomas Plach graduated to Msc. in September 2008 CDG 

External MSc. and PhD students 

name started MSc. / PhD thesis funding / project 

Iris Bergmair 6 Dipl. Ing. Profactor /NILMETA 

1 From April 2008 

2 Until August 2008 

3 From February 2008 

4 Until March 2008 

5 From November 2008 

6 at company Profactor

64 Funded Projects Part C: CD Laboratory 

Running and Accepted Projects 

1. Christian Doppler Laboratory for Surface Optical Techniques CDL OOM 1 

• voestalpine Stahl 

• EVG: wafer bonding 

• Konarka: light management for polymer solar cells, TEM & ultramicrotomy 

2. Nanoimprintlithography Austria: NIL- Austria : NILMETA 2 

3. 7th FWP EC project NANOCHARM 3 

4. 6th FWP EC project N2T2 (Novel nano-template technology and its applications to 

the fabricationof photonic devices) 4 

1 All three modules expire, as also the CDLOOM, at the end of 2009 

2 From April 2008 to March 2011 

3 From Januray 2008 to December 2010 

4 From August 2006 to October 2008

Part C: CD Laboratory Publications 65 

Publications 

The following Publications have been authored or co-authored by ZONA personnel: 

Peer Reviewed articles: 

either printed or in print; (as before, “*” indicates that this work was partially performed at 

HFP and ZONA 

[1] “Energy transfer in close packed PbS nanocrystals” V. Rinnerbauer, H.-J. Egelhaaf, 

and K. Hingerl, P. Zimmer, S. Werner, T. Warming, and A. Hoffmann, M. Kovalenko 

and W. Heiss, G. Hesser and F. Schäffler, Phys. Rev.B77, 085322 (2008) 

[2] “Particle manipulation using 3D ac electro-osmotic micropumps” W. Hilber, B. 

Weiss, M. Mikolasek, R Holly, K Hingerl and B Jakoby, J. Micromech. Microeng. 18 

(2008) 064016 

[3] “Refraction and band isotropy in 2D square-like Archimedean photonic crystal lattices 

”D. Jovanovic, R. Gajic, and K. Hingerl, Optics Express, 16, 4048, (2008) 

[4] “Radiation and scattering from imperfect cylindrical electromagnetic cloaks”, G. 

Isic, R. Gajic, B. Novakovic, Z. V. Popovic, and K. Hingerl, Optics Express 16, 1413 

(2008) 

[5] “Dielectrophoretic particle dynamics in alternating-current electro-osmotic Micropumps” 

B. Weiss, W. Hilber, R. Holly,P. Gittler, B. Jakoby, and K. Hingerl, Appl. Phys. 

Lett. 92, 184101 (2008) 

[6] “Directly Imprinted Surface-Emitting Distributed Feedback Structure Polymer Sensor 

Laser Devices for Enhanced Oxygen Sensitivity” M. Gaal, S. Sax, H. Plank, M. 

Teuchtmann, V. Rinnerbauer, C. Hasenfuß, H Schmidt, K. Hingerl, and E. J. W. List, 

Jpn. J. Appl. Phys. 47 (2008) 304 

[7] “Flat Bands and Surface States in Two-Dimensional Metallic Photonic Crystals” M. 

Bergmair, Ch. Hafner and K. Hingerl, J. Comput. Theor. Nanosci. 5, 717–724 (2008) 

[8] “Realization, characterization, and optical modeling of inverted bulk-heterojunction 

organic solar cells” T. Ameri, G. Dennler, C. Waldauf P. Denk, K. Forberich, M. C. 

Scharber, C. J. Brabec, and K. Hingerl, J. Appl. Phys. 103, 084506, (2008) 

[9] “Equalising stamp and substrate deformations in solid parallel-plate UV-based nanoimprint 

lithography” I. Bergmair, M. Mühlberger, M. Gusenbauer, R. Schöftner, K. 

Hingerl. Microelec. Eng. 85, (2008), 822 

[10] “Towards an integrated IR-absorption microsensor for the online monitoring of fluids”, 

J. Kasberger; A. Saeed; W. Hilber; K. Hingerl, B. Jakoby, Elektrotechnik-und- 

Informationstechnik. 125: (2008), 65 

[11] “Performance improvement of organic solar cells with moth eye anti-reflection 

coating”, K. Forberich, G. Dennler, M. C. Scharber, K. Hingerl, T. Fromherz, C. J. Brabec, 

Thin Solid Films 516: 7167-70 (2008) 

[12] Quantum Optical-Effect-Based Tunable Switches and Delay Lines” G. Manzacca, K. 

Hingerl, G. Cincotti, IEEE Jour. OF Quant. Electr., 44 872, (2008) 

[13] 2D photonic crystals on the Archimedean lattices (tribute to Johannes Kepler (1571- 

1630)) Gajic, R; Jovanovic, D; Hingerl, K, Optical Materials, 30 1065 (2008) 

[14] “Optical properties of GaAs 2D Archimedean photonic lattice tiling with the p4g 

symmetry” Jovanovic D. M Gajic R Hingerl K Sci. of Sintering 40, 167, (2008) 

[15] “Spatial Variability Enhances Species Fitness in Stochastic Predator-Prey Interactions” 

U. Dobramysl, U. C. Täuber, Phys. Rev. Lett. 101, 258102 (2008).

66 Publications Part C: CD Laboratory 

Non Reviewed Articles 

[1] “Effects of a compliant layer in solid parallel-plate UV-based nanoimprint lithography”, 

Bergmair-I; Muhlberger-M; Gusenbauer-M; Schoftner-R; Glinsner-T; Hingerl-K, 

17th International Vacuum Congress (IVC-17), 13th International Conference on Surface 

Science, (ICSS-13) and International Conference on Nanoscience and Technology 

(ICN+T 2007). Stockholm, Sweden. 2-6 July 2007., Journal-of-Physics:-Conference- 

Series 100: 042001, (2008) 

[2] “Fabrication process of 3D-photonic crystals via UV-nanoimprint lithography” 

Glinsner-T; Lindner-P; Muhlberger-M; Bergmair-I; Schoftner-R; Hingerl-K; Schmidt-H; 

Kley-E-B, Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering 

6591: 659103-1-7, (2007) 

[3] “Quality factor optimization of photonic crystal cavities through multiple multipole 

expansion technique and power loss integral”, Jannesary-R; Zamiri-S; Mazaheri-AD; 

Hamidipour-A; Mohtashami-A; Hingerl-K; Zarbakhsh-J, Proceedings-of-the-SPIE-The- 

International-Society-for-Optical-Engineering. April 2008; 6989: 69891B-1-12, (2008) 

[4] “Study of local dispersion in photonic crystal waveguide interfaces and heterostructures”, 

Dastmalchi-B; Kheradmand-R; Monazam-MRA; Hamidipour-A; Mohtashami-A; 

Hingerl-K; Zarbakhsh-J, Proceedings-of-the-SPIE-The-International-Societyfor-Optical-Engineering. 

April 2008; 6989: 698905-1-11, (2008) 

[5] “Coupled surface states in one- and two-dimensional frequency dependent photonic 

crystals”, Bergmair-M; Hingerl-K, Proceedings-of-the-SPIE-The-International-Societyfor-Optical-Engineering. 

April 2008; 6989: 698912-1-11, (2008) 

[6] “Negative index materials fabricated by different methods of nanoimprint lithography” 

I. Bergmair, M. Mühlberger, W. Schwinger, K. Hingerl, R. Schöftner, 34th IN- 

TERNATIONAL CONFERENCE ON MICRO & NANO ENGINEERING Athens 2008 

[7] “Fabrication of 3D Structures by Micro Contact Printing on Topography”, I. Bergmair, 

M. Mühlberger, W. Schwinger, K. Hingerl, R. Schöftner, 7th International Conference 

on Nanoimprint and Nanoprint Technology October , 13-15, 2008, Kyoto, Jp 

[8] “Reversal μCp using Hard Stamps for the Fabrication of negative Index Materials”, 

I. Bergmair, M. Mühlberger, W. Schwinger, K. Hingerl, R. Schöftner, 7th International 

Conference on Nanoimprint and Nanoprint Technology October , 13-15, 2008, Kyoto, Jp 

Book chapters, monographies 

[1] Preface, Guest Editor of the special volume on the EMRS symposium on (strong) light 

matter coupling: Photonic Nanostructures, Fundamentals and Applications (2009), 

K. Hingerl, in print

Part C: CD Laboratory Talks and Presentations 67 

Invited Talks 


*[1] “Flat Bands and Surface States in Two-Dimensional Metallic Photonic Crystals”, 

M. Bergmair, Ch. Hafner and K. Hingerl, Conf. of Computational Electrodynamics, Zürich 

June 2008 

*[2] “Kramers Kronig relatiosn for metallic photonic crystals” M. Bergmair, and K. 

Hingerl, Conf. on Nanostructures, Delhi. IN, Dec. 2008 

Conference Presentations (Talks and Posters) 

[1] “Coupled surface states in one- and two-dimensional frequency dependent photonic 

crystals”, Bergmair-M; Hingerl-K, Proceedings-of-the-SPIE-The-International-Society-for- 

Optical-Engineering. April 2008; 6989: 698912-1-11, (2008) 

[2] “Effects of a compliant layer in solid parallel-plate UV-based nanoimprint lithography”, 

I. Bergmair; M. Muhlberger; Gusenbauer; R. Schoftner; T. Glinsner; K. Hingerl, 17th 

International Vacuum Congress (IVC-17), 13th International Conference on Surface Science, 

(ICSS-13) and International Conference on Nanoscience and Technology (ICN+T 2007). 

Stockholm, Sweden. 2-6 July 2007., 

[3] “Quality factor optimization of photonic crystal cavities through multiple multipole 

expansion technique and power loss integral”, Jannesary-R; Zamiri-S; Mazaheri-AD; 

Hamidipour-A; Mohtashami-A; Hingerl-K; Zarbakhsh-J, SPIE-The-International-Society-for- 

Optical-Engineering. April 2008; Strasbourg, 

[4] “Negative index materials fabricated by different methods of nanoimprint lithography” 

I. Bergmair, M. Mühlberger, W. Schwinger, K. Hingerl, R. Schöftner, 34th INTERNA- 

TIONAL CONFERENCE ON MICRO & NANO ENGINEERING Athens 2008 

[5] “Fabrication of 3D Structures by Micro Contact Printing on Topography”, I. Bergmair, 

M. Mühlberger, W. Schwinger, K. Hingerl, R. Schöftner, 7th International Conference 

on Nanoimprint and Nanoprint Technology October , 13-15, 2008, Kyoto, Jp 

[6] “Reversal μCp using Hard Stamps for the Fabrication of negative Index Materials”, 

I. Bergmair, M. Mühlberger, W. Schwinger, K. Hingerl, R. Schöftner, 7th International Conference 

on Nanoimprint and Nanoprint Technology October , 13-15, 2008, Kyoto, Jp

68 Patents Part C: CD Laboratory 

Filed and granted patents 

[1] „Organischer Photodetektor zur Detektion infraroter Strahlung“, Verfahren zur 

Herstellung dazu und Verwendung, Michaela Böberl et al (4), Linz, Siemens, filed 

[2] „Photovoltaic Cells with a diffractive Layer“ C. Brabec, Gilles dennler, K. Forberich, 

K. Hingerl , Linz, Konarka 

[3] „Verfahren zum Herstellen einer Lichtkopplungseinrichtung „ K. Hingerl, R. Holly, 

R. Merz, P. Hudek, Photeon, granted 

[4] “Thermal radiation device, has radiation surface of crystalline material formed from 

photonic crystal with periodic structure” K. Hingerl, Siemens, granted,

Part D 

Lehre, Seminare und Symposia 

– 

Teaching, Seminars, and Symposia

Part D Teaching 71 

Winter Semester 2007/2008 

Teaching 

322001 SE Seminar aus Nanoscience and -technology 

W. Heiss, G. Springholz 

322002 PR Praktikum Halbleiterphysik I (WL) 

H. Sitter 

322009 PR Praktikum Nanotechnologie I 

G. Langer, D. Brodoceanu, M. Hohage 

322028 VO Grundlagen der Physik III 

G. Bauer, A. Bonanni, T. Fromherz, J. Stangl 

322031 UE Übungen zu Grundlagen der Physik III, 1. Gruppe 

J. Stangl 

322040 VO Halbleiterbauelemente (WV), Grundlagen f. Physiker u. Mechatroniker 

F. Schäffler 

322043 UE Übungen zu Grundlagen der Physik III für LA-Kandidaten 

A. Bonanni 

322066 VO Kristallwachstum I (WV) 

H. Sitter 

322074 VO Festkörperphysik für Lehramt und Biophysik 

W. Jantsch 

322079 VO Halbleiterphysik für Fortgeschrittene (WV) 

F. Schäffler 

322081 SE Seminar aus Halbleiterphysik (SM): Spintronics 

R. Koch 

322091 SE Seminar aus Festkörperphysik (SM): Moderne Optik 

W. Jantsch 

322095 VO Ausgewählte Kapitel aus der Festkörperphysik (SV): Strukturanalyse mit Röntgenstreuung 

J. Stangl 

322096 SE Besprechung neuerer Arbeiten aus Festkörper- u. Halbleiterphysik (LS) 

W. Jantsch, G. Bauer 

322099 UE Festkörperphysik für Lehramt und Biophysik 

W. Jantsch 

322101 UE Übungen zu Grundlagen der Physik III , 2. Gruppe 

T. Fromherz 

322104 VO Physikalische Messverfahren I (WV) 

K. Hingerl 

322112 VO Physik niedrigdimensionaler Systeme 

G. Brunthaler 

322114 VO Charakterisierung von Mikro- und Nanostrukturen I 

G. Springholz 

322115 UE Charakterisierung von Mikro- und Nanostrukturen I 

G. Springholz 

322116 VO Ausgewählte Kapitel aus der Halbleiterphysik (SV): Patente und Schutzrechte für Physiker 

und Ingenieure 

K. Hingerl

72 Teaching Part D 

322127 VO Physik (für Mechatroniker) 

W. Jantsch 

322128 PV Privatissimum für Diplomanden aus Festkörperphysik 

W. Jantsch, W. Heiss, K. Hingerl, R. Koch, H. Sitter 

322132 PR Grundpraktikum III, 1. Gruppe 

A. Bonanni 

322134 VO Festkörperphysik 

R. Koch 

322137 VO Nanoelektronik, Nanooptik und Nanosensorik II 

W. Heiss 

322138 UE Physik für Mechatroniker, 1.Gruppe 

S. Müllegger 


S. Müllegger 


S. Müllegger 


S. Müllegger 

322207 PV Privatissimum für Diplomanden aus Halbleiterphysik 

G. Bauer, G. Brunthaler, F. Schäffler, G. Springholz, J. Stangl 

322208 PV Privatissimum für Dissertanten aus Halbleiter- und Festkörperphysik 

G. Bauer, G. Brunthaler, F. Schäffler, G. Springholz, J. Stangl, W. Heiss, 

K. Hingerl, W. Jantsch, H. Sitter, R. Koch 

322209 VO Moderne Physik I (für Mechatroniker) 

L. Palmetshofer 

322210 UE Moderne Physik I (für Mechatroniker) 


322216 PR Grundpraktikum III 

H. Sitter 

322217 SE Diplomandenseminar Naturwissenschaftliche Methoden I 

R. Koch, S. Bauer 

322220 PR Anleitung zu wissenschaftlichen Arbeiten aus Festkörperphysik 

R. Koch


Summer Semester 2008 

322000 VO Elektronenmikroskopie 

F. Schäffler 

322011 PR Rasterelektronenmikroskopie 

M. Ratajski 

322013 VO Halbleiter-Hetero- und Quantum-Well-Strukturen 

G. Brunthaler 

322060 PR Fortgeschrittenenpraktikum 

J. Stangl, W. Heiss, M. Hohage, S. Lidong 

322082 PR Praktikum II aus Halbleiterphysik 

H. Sitter, G. Springholz, W. Heiss 

322089 VO Herstellung von Mikro- und Nanostrukturen 

A. Bonanni 

322091 SE Seminar aus Festkörperphysik (SM): Röntgenstreuung an Nanostrukturen 

J. Stangl, G. Bauer 

322097 VO Halbleiterbauelemente (Optoelektronik für Physiker und Mechatroniker) 

K. Hingerl 

322098 SE Besprechung neuerer Arbeiten aus Halbleiter- u. Festkörperphysik (LS) 

G. Bauer, W. Jantsch 

322100 PR Praktikum Nanotechnologie II 

H. Sitter, G. Springholz, W. Heiss, M. Hohage, J. Pedarnig, P. Hinterdorfer, S. Bauer, K. 

Piglmayer, G. Schütz 

322116 VO Ausgewählte Kapitel aus der Halbleiterphysik: Si-basierte Heterostrukturen (SV) 

F. Schäffler 

322121 VO Ausgewählte Kapitel aus der Festkörperphysik: Quantenelektronik(SV) 

T. Fromherz 

322123 VO Grundlagen der Halbleiterphysik (WV) 

W. Jantsch 

322124 UE Übungen zu Grundlagen der Halbleiterphysik 

H. Groiss 

322128 PV Privatissimum für Diplomanden aus Festkörperphysik 

W. Jantsch, W. Heiss, K. Hingerl, L. Palmetshofer, H. Sitter, 

322129 VO Physik für Chemiker 

G. Springholz 

322130 UE Übungen aus Physik für Chemiker, 1. Gruppe 

S. Müllegger 

322141 SE Projektseminar Naturwissenschaftliche Methoden 

S. Bauer, R. Koch 

322202 VO Grundlagen der Physik IV 

G. Bauer 

322203 UE Grundlagen der Physik IV, 1. Gruppe 

J. Stangl 


G. Bauer, G. Brunthaler, F. Schäffler, G. Springholz 


G. Bauer, G. Brunthaler, F. Schäffler, G. Springholz, W. Heiss, K. Hingerl, W. Jantsch, L. 

Palmetshofer, H. Sitter


322211 VO Moderne Physik II für Mechatroniker 


322212 UE Moderne Physik II für Mechatroniker 


322214 UE Übungen aus Physik für Chemiker, 2. Gruppe 

H. Malissa 


R. Koch, S. Bauer, K. Hingerl 

322220 PR Anleitung zum wissenschaftlichen Arbeiten aus Festkörperphysik 

R. Koch 

322221 UE Grundlagen der Physik IV, 2. Gruppe 

T. Fromherz 

322223 VO Physikalische Messverfahren II 

S. Müllegger 

322224 VO Ausgew. Kapitel aus Nanoscience & -technology: Nanomagnetismus & Spintronics 

R. Koch


Winter Semester 2008/2009 

322001 SE Seminar aus Nanoscience and -technology 

W. Heiss, G. Springholz 

322002 PR Praktikum Halbleiterphysik I (WL) 

G. Brunthaler 

322009 PR Praktikum Nanotechnologie I 

S. Müllegger 

322040 VO Halbleiterbauelemente (WV), Grundlagen f. Physiker u. Mechatroniker 

F. Schäffler 

322043 UE Übungen zu Grundlagen der Physik III für LA-Kandidaten 

H. Malissa 

322060 PR Fortgeschrittenenpraktikum 

J. Stangl, W. Heiss, M. Hohage, S. Lidong 

322071 UE Grundlagen der Physik I für Lehramtskandidaten 

A. Bonanni 

322074 VO Festkörperphysik für Lehramt und Biophysik 

G. Brunthalerh 

322079 VO Halbleiterphysik für Fortgeschrittene (WV) 

W. Heiss 

322096 SE Besprechung neuerer Arbeiten aus Festkörper- u. Halbleiterphysik (LS) 

W. Jantsch, G. Bauer 

322102 VO Grundlagen der Physik I (Mechanik und Wärmelehre) 

R. Koch 

322103 UE Grundlagen der Physik I (Mechanik und Wärmelehre), 1. Gruppe 

A. Bonanni 

322105 UE Grundlagen der Physik I (Mechanik und Wärmelehre), 2. Gruppe 

S. Müllegger 

322106 VO Grundlagen der Physik III (Wellen, Optik und Photonik) 

W. Jantsch 

322107 UE Übungen zu Grundlagen der Physik III (Wellen, Optik und Photonik), 1. Gruppe 

H. Malissa 

322108 UE Übungen zu Grundlagen der Physik III (Wellen, Optik und Photonik), 2. Gruppe 

G. Langer 

322109 VO Experimentalphysik I für Informationselektroniker 

F. Schäffler 

322110 UE Experimentalphysik I für Informationselektroniker, 1. Gruppe 

H. Groiss 

322114 VO Charakterisierung von Mikro- und Nanostrukturen I 

G. Springholz 

322115 UE Charakterisierung von Mikro- und Nanostrukturen I 

G. Springholz 

322116 VO Ausgewählte Kapitel aus der Halbleiterphysik (SV): Nanocrystals and nanomaterials 

A. Bonanni 

322122 UE Experimentalphysik I für Informationselektroniker, 2. Gruppe 

H. Groiss 

322128 PV Privatissimum für Diplomanden aus Festkörperphysik


W. Jantsch, W. Heiss, K. Hingerl, R. Koch, H. Sitter 

322132 PR Grundpraktikum III, 1. Gruppe 

A. Bonanni 

322140 VO Digitale Signalverarbeitung für Physiker (WV) 

T. Fromherz 


G. Bauer, G. Brunthaler, F. Schäffler, G. Springholz, J. Stangl 


G. Bauer, G. Brunthaler, F. Schäffler, G. Springholz, J. Stangl, W. Heiss, 

K. Hingerl, W. Jantsch, H. Sitter, R. Koch 

322209 VO Moderne Physik I (für Mechatroniker) 


322210 UE Moderne Physik I (für Mechatroniker) 


322216 PR Grundpraktikum III 

H. Sitter 


R. Koch, S. Bauer 

322220 PR Anleitung zu wissenschaftlichen Arbeiten aus Festkörperphysik 

R. Koch

Part D Talks and Seminars 77 

Semiconductor Physics Seminar Talks 

Date Talk 

21.01.2008: Emil List, TU Graz, Austria: “Printed Organic and Inorganic Electronic Devices” 

15.02.2008: Wlodek Zawadzki, IFPAN Warsaw, Poland: „‚Zitterbewegung’ of electrons in 

Graphene“ 

13.03.2008 Achim Trampert, Paul-Drude-Institut für Festkörperphysik Berlin, „Semiconductor 

Nanocolumns“ 

28.03.2008 Vaclav Holy, Charles University, Prague, Czech Republic: “X-ray investigation 

of magnetic semiconductors” 

14.04.2008 Maria Losurdo, Univ. Bari, Italy: “Chemistry and Electronic Phenomena at Surfaces 

& Interfaces: Ellipsometrry highlighting the interplay between material 

processing and properties” 

21.04.2008 Christian Commenda, Voest Alpine Stahl, Linz, Austria: “Electron Backscatter 

Diffraction (EBSD)” 

28.04.2008 Claus E. Ascheron, Springer Science+Business Med, Heidelberg, Germany: 

“Science Citation Index and Impact Factors - Gebrauch und Mißbrauch” 

08.05.2008 Christopher Phillips, Experimental Solid State Physics, Imperial College London, 

“Quantum Optics and Strong Coupling with Quantum Metamaterials” 

15.05.2008 Ana Diaz, ESRF Grenoble, France: 

02.06.2008 Harald Leitner, Dept. Metallkunde Montanuni Leoben, „Atomsonde“ 

05.06.2008 Metin Tolan, Universität Dortmund: „Harte Strahlung trifft weiche Materie: 

Forschung mit Synchrotronstrahlung“ 

09.06.2008 Mauro Rovezzi, ESRF Grenoble, France: “X-ray absorption fine structure approach 

in the study of diluted magnetic semiconductors” 

16.06.2008 Hilde Hardtdegen, Forschungszentrum Juelich: “MOVPE of GaN based structures 

for (spin)electronic applications” 

29.07.2008 Heinz Krenn, Uni Graz, Institut für Physik: „Nanomagnetism - Challenges in 

Research and Application“ 

19.09.2008 Vladimir Kaganer, Paul Drude Institute of Solid State Electronics, Berlin, Germany: 

“Kinetic optimum of Volmer-Weber growth: X-ray diffraction study of 

Fe3Si/GaAs(001) epitaxy” 

22.10.2008 Mildred Dresselhaus, MIT, Cambridge, MA, USA: “Why are we so excited 

about nanocarbons?” 

21.11.2008 Kiran Mundboth, ESRF Grenoble: “X-Ray Micro-Diffraction of Single 

SiGe/Si(001) Islands - Beyond The Ensemble Average” 

28.11.2008 Leo Miglio, Universitá Milano Bicocca, Italy: “Defect Engineering at the Nanoscale: 

Ordering of dislocations inside GeSi epitaxial islands on Si(001)”

78 Talks and Seminars Part D 

28.11.2008 Francesco Montalenti, Universitá Milano Bicocca, Italy: “Nucleation of SiGe 

islands on Si (001) in dependence of the wetting layer thickness” 

12.12.2008 Gilles Renaud, CEA Grenoble, France: “The growth of nanoparticle on surfaces, 

organized or not, investigated by In situ GISAXS and GIXD in UHV”

Part E 

Selected Publications 

of the 

Semiconductor Physics 

& 

Solid State Physics Groups

Part E Selected Publications 81 

Selected Publications and Research Reports 

In this section, extended abstracts of selected papers are collected which are authored or coauthored 

by members of the Institute for Semiconductor and Solid State Physics, and which 

were published in 2008 in high-impact-factor journals. Complete publication lists for the year 

2008 of the Semiconductor and Solid State Groups and of the CD Laboratory are given above 

in sections A, B and C, respectively. 

Growth phenomena 

◦ Quasi-seeded growth of ligand-tailored PbSe nanocrystals through cation-exchange 83 

◦ Gold/Iron Oxide Core/Hollow-Shell Nanoparticle 84 

◦ Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental 85 

◦ Ordering of Ge islands on Hill-Patterned Si (001) Templates 86 

◦ Quantitative determination of Ge profiles across SiGe wetting layers on Si (001) 87 

◦ Stabilization of PbSe quantum dots by ultra-thin EuTe and SrTe barrier layers 88 

Structural, electronic, optical and spin properties 

◦ Temperature Tuning of Nonlinear Exciton Processes in Self-Assembled Oligophenyl 89 

◦ Observation of Strong-Coupling Effects in a Diluted Magnetic Semiconductor Ga1-xFexN 90 

◦ Antiferromagnetic Order with Atomic Layer Resolution in EuTe (111) Films 91 

◦ Tuning spin properties of excitons in single CdTe quantum dots by annealing 92 

◦ Diffuse x-ray scattering from inclusions in ferromagnetic Ge1−xMnx layers 93 

◦ Temperature-dependent mid-infrared photoluminescence of epitaxial PbTe/CdTe quantum 94 

Nanoanalytical Techniques 

◦ Crystal truncation planes revealed by three-dimensional reconstruction of reciprocal 95 

◦ Beyond the ensemble average: X-ray microdiffraction analysis of single SiGe islands 96 

◦ Imaging of nanoislands in coherent grazing-incidence small-angle x-ray scattering 97 

Technology and devices 

◦ Vacuum-Processed Polyaniline–C60 Organic Field Effect Transistors 98 

◦ Bipolar Charge Transport in PCPDTBT-PCBM Bulk-Heterojunctions for Photovoltaic 99

82 Selected Publications Part E 

◦ Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods 100 

◦ Quantum dot nanocolumn photodetectors for light detection in the infrared 101 

◦ Highly efficient (infra)red conversion of InGaN light emitting diodes by nanocrystals 102


Angewandte Chemie - International Edition 47 (2008) 3029 

Quasi-seeded growth of ligand-tailored PbSe 

nanocrystals through cation-exchange mediated 

nucleation 

Maksym V. Kovalenko 1 �, Dmitri V. Talapin 2 , Maria Antonietta Loi 3 , Fabrizio Cordella 3 , 

Günter Hesser 1 , Maryna I. Bodnarchuk1, and Wolfgang Heiss 1 

For the first time, an unusually fast cation-exchange at nanoscale is demonstrated to be an efficient 

tool for precise controlling the nucleation of nanocrystals. As a model system, 3.2 to 

14 nm large PbSe nanocrystals were produced via the nucleation reaction of Pb 2+ with transient 

SnSe nuclei. Furthermore, the new synthesis allows a convenient surface derivatization 

of the PbSe NCs with various ligands. 

Top: Schematic illustration of the cation-exchange mediated nucleation of PbSe NCs followed 

by their growth. Bottom: SEM image of a 3D nanocrystal superlattice of 13.8 nm large PbSe 

NCs formed upon evaporation of concentrated colloidal solution on H-terminated Si substrate. 

Affiliation: 

1 

Solid State Physics Division, Johannes Kepler University Linz, Austria. 

2 

Department of Chemistry, University of Chicago, Chicago, IL 60637 (USA) 

3 

Physics of Organic Semiconductors, Zernike Institute for Advanced Materials, University of Groningen, 9747 AG Groningen 

(The Netherlands) 

Funding: 

FWF 

Corresponding author: Wolfgang.Heiss@jku.at


Advanced Materials 20 (2007) 4323 

Gold/Iron Oxide Core/Hollow-Shell 

Nanoparticles 

Elena V. Shevchenko 1 , Maryna I. Bodnarchuk 2 , Maksym V. Kovalenko 2 , Dmitri 

V. Talapin 1 , Rachel K. Smith 3 , Shaul Aloni 1 , Wolfgang Heiss 2 , and A. Paul Alivisatos 1 

An approach to synthesize binary colloidal nanoparticles, consisting of gold nanoparticles encapsulated 

in a hollow iron oxide shell, is described. The growth of such structures is based 

on random nucleation of iron on the preformed gold nanoparticles. Subsequent oxidation of 

the iron shell by oxygen leads to the formation of the hollow oxide shell. Adjustments of the 

gold particle–particle interaction by adding subsequent organic molecules to the reaction solution 

makes it possible to encapsulate several gold cores inside one iron oxide shell. Optical 

data indicate a significant shift of the frequency of the plasmon resonance of gold nanoparticles 

as a result of the deposited iron oxide shell. Imminent control over the porosity and 

thickness of the oxide shell can make the use of such nanoparticles as a catalyst in carbon 

monoxide conversion possible. Magnetization measurements reveal the superparamagnetic 

behavior of the gold/iron oxide core/hollow-shell nanoparticles at room temperature. Shifted 

hysteresis loops after field-cooling shows an exchange bias, originating from the presence of a 

spin-glass-like layer at the nanoparticle surface. 

a–d) Transmission electron microscopy (TEM) images of gold/iron oxide (core/hollow-shell) 

nanoparticles synthesized with different amounts of oleic acid. Molar ratio of 

oleylamine/oleic acid: a) 1:0, b) 1:0.1, c) 1:0.3, and d) 1:1. e) Optical spectra of 4.5nm Au 

without and with 2.5 and 3.3nm iron oxide hollow shells, and Fe core (4.5 nm)/iron oxide 

shell (2.5 nm) nanoparticles. Inset in (a) gives the electron energy loss (Fe) spectrum of 

Au/iron oxide (core/hollow-shell) nanoparticle acquired in scanning TEM (STEM) 

Affiliation: 

1 The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (USA) 

2 Solid State Physics Division, Johannes Kepler University Linz, Austria. 

3 Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (USA) 

Funding: 

FWF, Austrian Nanoinitiative 



Phys. Rev. Lett. 101 (2008) 135502 

Publication selected for the Virtual Journal of Nanoscale Science & Technology 18 (2008) 

and as ESRF highlight 2008 

Controlled Aggregation of Magnetic Ions in a Semiconductor: 

An Experimental Demonstration 

A. Bonanni 1 , A. Navarro-Quezada 1 , Tian Li 1 , M. Wegscheider 1 , Z. Matěi 2 , V. Holý 2 , R.T. 

Lechner 1 , G. Bauer 1 , M. Rovezzi 3 , F. D’Acapito 3 , M. Kiecana 4 , M. Sawicki 4 ,and T. Dietl 4 

The control on the distribution of magnetic ions into a semiconducting host is crucial for the 

functionality of magnetically doped semiconductors. By combining TEM and synchrotron 

XRD with SQUID we have identified three distinct ways by which Fe incorporates into the 

GaN lattice: (i) substitutional Fe 3+ diluted ions accounting for the paramagnetic response [1], 

(ii) Fe-rich (Ga,Fe)N wurtzite nanocrystals commensurate with and stabilized by the GaN 

host lattice, and (iii) hexagonal -Fe3N precipitates. The formation of nanocrystals containing a 

large density of the magnetic constituent elucidates the origin of the ferromagnetic features 

persisting up to above room temperature. Importantly, the doping with either Si or Mg hampers 

the nanocrystal assembling. Since, quite generally, the binding energy of TM pairs depends 

on the valency of the open d shells, there are grounds to suppose that the Fermi-level 

engineering [2] evoked here for (Ga,Fe)N:Si,Mg can serve to control the magnetic ion aggregation 

in a number of semiconductors and oxides, providing a way to the self-organized fabrication 

of multicomponent systems with tailored magnetic, magneto-optical, and magnetotransport 

properties at the nanoscale. 

Fig. 1: Bright-field images (a),(g), TEM with mass contrast (b),(d),(f ),(h),( j),(l), and Fourier 

filtered images with strain mapping (c),(e),(i),(k) of (Ga,Fe)N revealing the presence of Fe3N 

precipitates (a)–(e), spinodal decomposition (g)–(k), and the effect of codeposition of either Si 

(f),(l) or Mg (d),(e),( j),(k) preventing the formation of the Fe-rich regions. 

References: 

[1] A. Bonanni et al., Phys. Rev. B 75 (2007) 125210. 

[2] T. Dietl, Nature Mater. 5 (2006) 673 

Affiliation: 

1 


2 

Department of Condensed Matter Physics, Charles University, Prague, Czech Republic. 

3 

INFM-OGG, c/o GILDA CRG-ESRF, Grenoble, France. 

4 

Institute of Physics, Polish Academy of Sciences, and Institute of Theoretical Physics, University of Warsaw, Poland 

Funding: 

FWF, ERC 

Corresponding author: alberta.bonanni@jku.at


Appl. Phys. Lett. 92, 113106 (2008) 

Ordering of Ge islands on Hill-Patterned Si (001) Templates 

Gang Chen 1 , H. Lichtenberger 1 , D. Pachinger 1 , G. Bauer 1 , W. Jantsch 1 , F. Schäffler 1 , G. 

Vastola 2 , and Leo Miglio 2 

We studied the nucleation and ordering mechanism of Ge islands on hill-patterned Si (001) 

templates. Like in the case of pit-patterned substrates [1], the initial Ge wetting layer decorates 

the inclined surfaces of the hill pattern with corrugations consisting entirely of {105} 

faceted prisms and {001} terraces. Upon further Ge deposition, islands nucleate as pairs in the 

V-shaped troughs between neighboring hills, and subsequently merge into a single island near 

the center of each trough. Finite element calculations [2] show that island nucleation and the 

subsequent movement toward the center of the trough are governed by elastic energy minimization. 

Figure 1 (a): 3D AFM image of a hill-patterned sample 

after deposition of 3 ML Ge at 570°C; (b): corresponding 

image after Laplace filtering, which enhances the radial 

("R") and tangential ("T") corrugations that form upon Ge 

deposition. The former result from prismatic, {105} terminated 

Ge structures that are the equivalent of degenerate 

Ge islands on a surface that has the same inclination as the 

intersection line between adjacent {105} planes. (c): 3D 

image after 5 ML Ge at 620°C, showing domes at the center 

of the troughs between adjacent hills; (d): corresponding 

Laplace filtered image. 

References 

[1] Gang Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler, Phys. Rev. B 74, 035302 (2006). 

[2] Zhenyang Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio, Phys. Rev. Lett. 98, 

176102 (2007). 

1 Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University Linz, Austria. 

2 L-NESS and Department of Materials Science, University of Milano Bicocca, Via Roberto Cozzi 53, 20125 Milano, Italy 

Funding: FWF, GME 

Corresponding author: friedrich.schaffler@jku.at 

Figure 2 (a): Large-area, Laplace-filtered 

AFM image for a period of 350 nm; (b): 

enlarged 3D image; (c): island volume distribution 

of (a); (d): large area, Laplacefiltered 

AFM image for a period of 250 

nm; (e): zoom-in; (f) bimodal island volume 

distribution of (d). White � symbols in 

(a), (d) and (e) mark the hill positions, 

dashed lines in (e) the troughs between 

hills.



Quantitative determination of Ge profiles across 

SiGe wetting layers on Si (001) 

M. Brehm 1 , M. Grydlik 1 , H. Lichtenberger 1 , T. Fromherz 1 , N. Hrauda 1 , W. Jantsch 1 , F. 

Schäffler 1 , G. Bauer 1 

The peak positions in photoluminescence (PL) spectra of Ge wetting layers (WL) deposited at 

700°C were measured versus the Ge coverage with an extremely high relative resolution of 

0.025 monolayers. A nearly linear redshift of the peaks with increasing Ge coverage is observed. 

We derived quantitative WL composition profiles by fitting this shift, and its dependence 

on the deposition temperature of the capping layer (Tc), to results of band structure calculations 

[1]. Despite the high growth temperature, the Ge content in the WL exceeds 80%. It 

is shown that the composition profile is dominated by surface segregation of Ge on Si. 

Figure: Left: Dependence of the WL PL energies on Ge coverage.(a) Peak positions of WL no phonon 

(NP) emission vs. Ge coverage for three Tc (black squares, red triangles, and blue circles). Black diamonds: 

peak positions of the Si bulk lines. Full lines: calculated PL energies based on the Ge profiles 

shown in the right panel. An excellent agreement between calculation and experiment is achieved for 

all Tc‘s using only one adjustable parameter as described below. Inset: calculated dependence of the 

WL NP emission over a wide range (0–30 ML) of Ge coverages. (b) Dependence of WL PL spectrum 

on Ge coverage for a sample capped at Tc=500 °C. Spectra were normalized to the intensities of the 

bulk Si lines. Right: Calculated Ge profile across the WL for Tc of (a) 300, (b) 500, and (c) 700 °C for 

the different Ge coverages indicated in the plot. These profiles were used in the calculation of the PL 

energies. The top QW interface is smeared out due to the segregation of Ge on Si during the growth of 

the capping layer at elevated temperatures [2]. Since for all QW structures all growth temperatures 

except Tc were the same, the only parameter varied in the calculations of the Ge profiles and the PL 

energies was the surface segregation constant �2 that describes the smearing of the top QW interface 

and its dependence on Tc. (��1;3.7; 4.8 Å for Tc=300; 500; 700 °C).� 

References 

[1] T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. F. Nützel, G.Abstreiter, Phys. Rev. B 50, 15073 (1994). 

[2] A. Benedetti, D. J. Norris, C. J. D. Hetherington, A. G. Cullis, D. J. Robbins, and D. J. Wallis, J. Appl. Phys. 93, 3893 

(2003), and references therein. 

1 

Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University Linz, Austria. 

Funding: FWF, GME. 

Corresponding author: thomas.fromherz@jku.at



Stabilization of PbSe quantum dots by ultrathin 

EuTe and SrTe barrier layers 

L. Abtin and G. Springholz 

Overgrowth of self-assembled quantum dots usually changes their shape and com-position 

due to surface exchange reactions and redistribution of adatoms. As shown for PbSe dots, 

these transformations can be completely suppressed by cov-ering the dots with ultra-thin 

EuTe or SrTe barrier layers due to the resulting blocking of adatom exchange, which is based 

on the large EuTe and SrTe binding energies. The model is supported by annealing experiments 

that show that these barrier layers also suppress the usual coarsening and Ostwald ripening 

process. 

Fig. 1: Scanning tunnelling microscopy images 

of 5 monolayers (ML) PbSe dots with initial 100 

Å dot height after capping with different layer 

sequences: (a) 60 Å PbTe, (b) 0.1 ML EuTe followed 

by 60 Å PbTe, (c) to (f) 0.5 ML EuTe followed 

by 80, 120 and 160 Å, respectively. Image 

size: 0.3 x 0.3 µm 2 , except for (c) 0.l x 0.1 µm 2 . 

References 

[1] L. Abtin, G. Springholz and V. Holy, Phys. Rev. Lett. 97, 266103 (2006). 

[2] G. Springholz, L. Abtin and V. Holy, Appl. Phys. Lett. 90, 113119 (2007). 

Funding: FWF, GME, EU. 

Corresponding author: gunther.springholz@jku.at 

Fig. 2: Intensity evolution of the (004) reflection 

high-energy electron diffraction (RHEED) spot 

during (a) PbSe growth and (b) following PbTe 

overgrowth after predeposition of different EuTe 

barrier layers with thicknesses increasing from 

nEuTe = 0 to 1 ML. The inserts show the RHEED 

patterns after 5 ML PbSe (a) and 100 Å PbTe 

deposition (b). Panels (c) and (d) show the same 

(004) intensity evolution for SrTe barrier layers 

with nSrTe varying from 0 to 0.5 ML. In (d) the 

RHEED trace for 1 ML EuTe barrier is shown 

for comparison.


Adv. Mater. 20, 3017 - 3021(2008) 

Temperature Tuning of Nonlinear Exciton Processes in 

Self-Assembled Oligophenyl Nanofibers under Laser 

Action 

Francesco Quochi 1 , Michele Saba 1 , Fabrizio Cordella 1 , Agnieszka Gocalinska 1 , 

Riccardo Corpino 1 , Marco Marceddu 1 , Alberto Anedda 1 , Andrei Andreev 2 , Helmut Sitter 2 , 

Niyazi Serdar Sariciftci 3 , Andrea Mura 1 , and Giovanni Bongiovanni 1 

Organic semiconductors have long been investigated for their potential of enhancing laser 

technology owing to their large conversion efficiency, gain cross-section, and bandwidth.[1] 

Oligophenylene-based p-conjugated materials represent an important class of organic semiconductors 

for which amplified spontaneous emission (ASE) and low-threshold lasing action 

have been achieved in single crystals and ordered thin films.[2] 

We studied laser action in epitaxially-grown oligophenyl nanofiber films under both femto- 

and nanosecond-pulsed excitation conditions at cryogenic and room temperature. Lasing 

threshold is almost independent of lattice temperature for femtosecond excitation, but is reduced 

by about two orders of magnitude when nanofibers are cooled from 300 to 80K under 

slowly varying excitation conditions. 

This behaviour primarily results from the dependence of exciton mobility on lattice temperature; 

as exciton mobility generally reduces with crystal cooling, the low-temperature improvement 

of lasing threshold is expected to be observable in other organic crystals. Inhibition 

of singlet bimolecular recombination at 80K enables laser action in the monomolecular 

regime. 

Emission spectra of p-6P nanofibers kept at 

T=80 K and excited by 4 ns long pulses at 380 

nm. Excitation intensities are 3.6, 7.2, 14, 18, 29, 

and 72 kW cm -2 . Inset: Temporal profiles of the 

pump intensity (dotted curve) and gate window 

(shaded curve). 


3 LIOS, Institute for organic solar cells, University of Linz 

Funding: 

FWF 

Corresponding author: helmut.sitter@jku.at 

References: 

[1] I. D. W. Samuel, G. A. Turnbull, Chem. Rev. 2007, 107, 1272. 

[2] F. Quochi, F. Cordella, R. Orru` , J. E. Communal, P. Verzeroli, A. 

Mura, G. Bongiovanni, A. Andreev, H. Sitter, N. S. Sariciftci, Appl. 

Phys. Lett. 2004, 84, 4454. 

Affiliation: 

1 Dipartimento di Fisica, Università degli Studi di Cagliari 

I-09042 Monserrato (Italy)



Observation of Strong-Coupling Effects in a Diluted 

Magnetic Semiconductor Ga1-xFexN 

W. Pacuski 1,2 , P. Kossacki 1 , D. Ferrand 2 , A. Golnik 1 , J. Cibert 2 , M. Wegscheider 3 , A. 

Navarro-Quezada 3 , A. Bonanni 3 ,M. Kiecana 4 , M. Sawicki 4 , and T. Dietl 4,5,6 

A strong hybridization between anion p states and open d shells of transition metals is known 

to account for the spin-dependent properties of magnetic insulators, semiconductors, and 

superconductors, such as antiferromagnetic superexchange, and hole-mediated Zener 

ferromagnetism. Furthermore, the corresponding exchange splitting of the bands gives rise to 

giant magneto-optical and 

magnetotransport phenomena. It has 

been suggested [1] that due to the 

strong p-d coupling, the virtual crystal 

approximation breaks down in oxides 

and nitrides, making the apparent 

exchange splitting small and of opposite 

sign. To check the above model, we 

have studied magnetization and 

magneto-reflectivity in the free exciton 

region for (Ga,Fe)N epilayers. Giant 

Zeeman splitting has been observed by 

magneto-reflectivity for the A, B, and C 

excitons in Ga1-xFexN. The spectra are 

well described by the exciton model 

valid for diluted magnetic 

semiconductors with the wurtzite 

structure. The determined sign and 

magnitude of the apparent p-d exchange 

energy constitutes an important 

verification of the above mentioned 

recent theory [1]. 

Fig. 1: Reflectivity of Ga1-xFexN in 

Faraday configuration at 1.6 K for x=0.21% (a) and 0.11% (c). Panels (a,c): experimental data 

(symbols) and their fitting with the polariton model (solid lines). Symbols in (b,d): exciton 

energies obtained from the fitting at various magnetic fields; solid lines: expectation of the 

exciton model for the exciton and exchange parameters 

References: 

[1] T. Dietl, Phys. Rev. B 77 (2008) 085208. 

Affiliation: 

1 

Institute of Experimental Physics, University of Warsaw, Poland 

2 

Institut Néel/CNRS-Université J. Fourier, Grenoble, France 

3 


4 

Institute of Physics, Polish Academy of Sciences, and Institute of Theoretical Physics, University of Warsaw, Poland 

Funding: 

FWF, ERC 

Corresponding author: alberta.bonanni@jku.at



Antiferromagnetic Order with Atomic Layer 

Resolution in EuTe (111) Films 

E. Schierle, 1 E. Weschke, 1 A. Gottberg, 1 W. Söllinger, 2 W. Heiss, 2 G. Springholz, 2 G. Kaindl 1 

Resonant soft x-ray scattering at the Eu-M5 resonance 

using synchrotron radiatio was used as a highly 

sensitive tool for investigation of antiferromagnetic 

EuTe epilayers consisting only of a few atomic layers. 

From virtually background-free magnetic diffraction 

patterns recorded around the antiferromagnetic 

(½ ½ ½) Bragg reflection showing pronounced 

Laue oscillations (see Fig. 1), the temperature dependence 

of the magnetic order parameter could be 

determined for each individual atomic layer of the 

sample (see Fig. 2). The results reveal that the magnetic 

properties of the thin films are drastically 

changed at the interfaces, an issue that has been long 

addressed in numerous theoretical studies. Our measurements 

show that the temperature-dependent decay 

of the magnetization at the interface is quite different 

from that of the inner layers and in particular 

show a quite different power law exponent. The results 

from the scatting experiments are modelled by 

Monte Carlo calculations taking Heisenber gtype 

nearest and next nearest exchange interactions into 

account. Thereby it is demonstrated that even a minute intermixing of the interfaces extending 

only over the first 1-2 monolayers sensitively affect the magnetic properties of the interfaces. 

Fig. 2: (a) Experimental magnetization profiles (dots) of a 20 ML EuTe film for various temperatures, 

and (b) temperature dependence of layer magnetization of the atomic layers at the interface (0, 1, 2 and 

3) and of the central layer (10). The solid lines are from Heisenberg model calculations taking 

PbTe/EuTe intermixing into account as shown by the insert. 

1 Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany 

2 Institut für Halbleiterphysik, Johannes Kepler Universität, A-4040 Linz, Austria 


Corresponding author: gunther.springholz@jku.at 

Fig. 1: Magnetic x-ray scattering around 

the antiferromagnetic (½ ½ ½) reflection 

of a 20 ML EuTe film as a function 

of temperature above (dashed) and below 

(solid) the Neel point of 12.8 K. 

Comparison of measurement (dots) and 

simulation (solid lines) is shown in (b).


Nanotechnology 19 (2008) 125 706 

Tuning spin properties of excitons in single 

CdTe quantum dots by annealing 

K. P. Hewaparakrama 1 , S. Mackowski 1,2 , H. E. Jackson 1 , L. M. Smith 1 , 

W. Heiss 3 and G. Karczewski 4 

Using polarization-resolved photoluminescence imaging in external magnetic fields we measure 

statistically significant distributions of exchange splitting, diamagnetic shift and effective 

g-factor of excitons in tens of single CdTe quantum dots. Comparison between the as-grown 

and annealed structures shows strong suppression of ensemble inhomogeneities, with the average 

exchange splitting reduced by half and significant narrowing of the g-factor distribution. 

Remarkably, the average value of the excitonic g-factor remains unchanged. This unique ability 

to yield highly uniform quantum dot ensembles without hampering the exciton Zeeman 

splitting makes annealing a highly attractive means for tuning the spin properties of quantum 

dot excitons. 

Intensity [arb. units] 


X [�m] 

� 

X 

� 

Y 

annealed CdTe QD 

T=6K 

�E~0 

2,078 2,079 2,080 

X [�m] 

� 

X 

� 

Y 

Energy [eV] 

Affiliation: 

1 Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011, USA 

2 Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5, 87-100 Torun, Poland 


2 Institute of Physics Polish Academy of Sciences, Lotnikow 32/46, 02-668Warsaw, Poland 

Funding: 

ÖAD 

Corresponding author: Wolfgang.Heiss@jku.at 

Y [�m] 

Y [�m] 

2,089 2,090 

Energy [eV] 

�E=480�eV 

(a) 

(c) 


X [�m] 

� 

X 

� 

Y 

�E=-310�eV 

2,107 2,108 2,109 

Energy [eV] 

Low-temperature (T = 6 K) photoluminescence 

spectra of three individual CdTe QDs 

annealed at T = 420 C measured at two orthogonal 

linear polarizations: πX (gray) and 

πY (black). The dots feature negative (a), 

positive (b) and almost no (c) exchange 

splitting. In the insets 2 μm by 2 μm spatial 

maps of these dots are shown. The gray 

scale and dark-line scale correspond to πX 

and πY polarizations, respectively. 

Y [�m] 

(b)


Phys. Rev. B 78, 144401 (2008) 

Diffuse x-ray scattering from inclusions in 

ferromagnetic Ge1−xMnx layers 

V. Holý 1 , R. T. Lechner 2 , S. Ahlers 3 , L. Horák 1 , T. H. Metzger 4 , A. Navarro-Quezada 2 , 

A. Trampert 5 , D. Bougeard 3 , and G. Bauer 2 

Magnetic properties of Ge1−xMnx epitaxial layers with a Mn content of a few percents are substantiallyinfluenced 

by inhomogeneities in the distribution of Mn atoms in the Ge lattice. Depending 

on the substrate temperature during molecular-beam epitaxial fabrication, apparently 

cubic, coherent Mn-rich clusters or incoherent precipitates consisting of the hexagonal, intermetallic 

Mn5Ge3 phase can occur in a defect free, diamond lattice Ge matrix. In this work, we 

apply synchrotron x-ray diffraction in grazing-incidence geometry to probe the diffuse scattered 

intensity of the distorted Ge host lattice. Based on a theoretical description of the scattered 

intensity we derive quantitative information on the lattice mismatch between the Mn inclusions 

and the Ge lattice, as well as on the average size of the inclusions and the average 

Mn content within the inclusions. 

Figure: Left: Two-dimensional intensity maps of samples #1 and #2 (coherent clusters) measured 

(black) and calculated (red) in a broad range around the RELPs 220 and 400 with the incidence 

angle of 0.3°. The reciprocal qrqa plane is parallel to the sample surface. Right: 2D-maps for the sample 

#3 (precipitates) measured at two different incidence angles: 0.3° and 0.45°, i.e. 10 nm and 1�m 

penetration depth. The asymmetry in (b) is related to the hexagonal Mn5Ge3 (300) precipitate peak. 

Table: 

Ge1−xMnx 

samples with their fabrication and fit parameters. x represents the nominal average Mn content, TS the 

substrate temperature, and Mn incorporation the type of inclusions. The fit parameters are Rincl, the 

average inclusion radius, �incl the relative lattice polarizability, fincl the relative lattice misfit between 

inclusion and Ge host, and xincl the Mn content within the inclusions. 

1 2 

Charles University, Faculty of Mathematics and Physics, Praha, Czech Republic. Institut für Halbleiter- und 

Festkörperphysik, 3 WSI, Technische Universität München, Germany 4 ESRF, Grenoble Cedex, France, 5 P. Drude Institut für 

Festkörperelektronik, Berlin, Germany 

Funding: FWF (P18942-N20) 

Corresponding author: rainer.lechner@jku.at 

# 3


Phys. Rev. B 78 (2008) 165320 

Temperature-dependent mid-infrared photoluminescence 

of epitaxial PbTe/CdTe quantum dots and calculation 

of the corresponding transition energy 

T. Schwarzl 1 , E. Kaufmann 1 , G. Springholz 1 , K. Koike 2 , T. Hotei 2 , M. Yano 2 , and W. Heiss 1 

We present the temperature dependence of continuous-wave mid-infrared photoluminescence 

of PbTe quantum dots in a CdTe matrix. The quantum dots are formed by epitaxial precipitation 

of a two-dimensional PbTe layer upon thermal annealing [1, 2]. A strong shift of the 

emission to longer wavelengths with decreasing temperature is found. This shift is not only 

caused by the strong temperature dependence of the band gap of PbTe but also by the strain in 

the dot as well as by the change in quantization energies, both being temperature dependent 

due to the thermal expansion mismatch between PbTe and CdTe, and via the effective masses 

of PbTe. At low temperatures, we observed an increase in the emission intensity with rising 

temperature, depending on dot size. This is attributed to the presence of a dark ground state, 

as was also observed for lead salt nanocrystals. The influence of the excitation power on the 

emission spectra at various temperatures indicates carrier redistribution between the dots. Furthermore, 

an analytical calculation of the ground-state transition energy in the dots is performed 

using a spherical dot shape, and including the temperature-dependent strain in the dots 

and the matrix as well as the temperature dependence of the effective masses of PbTe. From 

these model calculations, a good agreement to the experimental data is obtained over the 

whole temperature range from 20 to 300 K. 

Left: Temperature-dependent 

continuous-wave PL spectra for 

PbTe/CdTe quantum dots formed 

by an initially (a) 3 nm and 

(b) 5 nm thick PbTe layer. The 

arrows depict the calculated 

ground state transition energy 

for different dot diameters DQD. 

Right: Peak energy of the PL 

spectra as a function of temperature 

(symbols) for (a) 3 nm 

and (b) 5 nm PbTe. The full, 

dashed and dash-dotted lines 

depict the calculation of the 

ground state transition energy for a DQD of (a) 22 nm and (b) 32 nm, the band gap of 

isotropically strained PbTe, and the band gap of unstrained PbTe, respectively. 

References: 

[1] W. Heiss, et al., Appl. Phys. Lett. 88 (2006) 192109. 

[2] W. Heiss, et al., J. Appl. Phys. 101 (2007) 081723. 

Affiliation: 

1 Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Austria. 

2 Osaka Institute of Technology, Asahi-ku Ohmiya, Osaka, Japan. 

Funding: 

FWF 

Corresponding author: thomas.schwarzl@jku.at



Crystal truncation planes revealed by threedimensional 

reconstruction of reciprocal space 

I. A. Vartanyants, 1 A. V. Zozulya, 1 K. Mundboth, 2,3 O. M. Yefanov, 1 M.-I. Richard, 2 

E. Wintersberger, 3 J. Stangl, 3 A. Diaz, 2,3 C. Mocuta, 2 T. H. Metzger, 2 G. Bauer, 3 T. Boeck, 4 

M. Schmidbauer 4 

For studying surface properties of nanocrystals, we present an approach based on a combination 

of the grazing incidence small angle x-ray scattering (GISAXS) technique and tomographic 

methods. In this approach, GISAXS data from a micro- or nanometer sized object are 

collected successively at different azimuthal angular positions, which makes it possible to 

measure the whole three-dimensional (3D) intensity distribution in reciprocal space. As an 

example, the full 3D reciprocal space intensity originating from the truncated epitaxially 

grown {111} facetted SiGe pyramids with a square base on (001) Si substrate was measured. 

This technique enables us to observe and explain crystal truncation planes which originate 

from scattering on the edges of the nanocrystals. 

(a) (b) 

Figure: (a) 3D plot of an isointensity surface in the reciprocal space obtained from a set of calculated 

2D diffraction patterns in the DWBA approximation. Diffraction patterns were calculated at azimuthal 

angle positions with an increment of 1°. Red-green-blue colors correspond to the z projection of isosurface 

normal. Gray arrows indicate the directions along crystallographic planes (001) top and {111} 

on the sides. Black arrows indicate the qx ,qy ,qz directions in reciprocal space. The length of each 

black arrow corresponds to 0.1 nm −1 . (b) The equivalent plot for the measured data. Althoug fine detail 

is lost due to a small but finite size distribution of the islands, the main features, i.e., streaks due to the 

island facets and the crystal truncation planes spanned between the streaks are clearly visible. These 

CTPs are normal to the edges of the pyramid-shaped SiGe islands. 

1 HASYLAB at DESY, Hamburg, Germany 

2 ESRF, Grenoble, France 

3 Institut für Halbleiterphysik, Johannes Kepler Universität Linz, Austria 

4 Leibniz Institute for Crystal Growth, Berlin, Germany. 

Funding: FWF, BMWF, EU. 

Corresponding author: julian.stangl@jku.at



Beyond the ensemble average: X-ray microdiffraction 

analysis of single SiGe islands 

C. Mocuta, 1 J. Stangl, 2 K. Mundboth, 1,2 T. H. Metzger, 1 G. Bauer, 2 I. A. Vartanyants, 3 

M. Schmidbauer, 4 and T. Boeck 4 

X-ray microdiffraction is used to analyze strain and composition profiles in individual micron-sized 

SiGe islands grown by liquid phase epitaxy on Si(001) substrates. From the variation 

of the scattered intensity while scanning the sample through a focused x-ray beam of few 

µm size, an image of the island distribution on the sample is created. Using this image it is 

possible to identify particular islands and select them for analysis one by one. The Ge and 

strain distribution within each island is obtained from the intensity distribution in reciprocal 

space. The detailed shape of each measured island is obtained from scanning electron microscopy. 

Apart from truncated pyramid-shaped islands, we detect and characterize a small number 

of flat islands and show that they represent an earlier growth stage of the pyramidal 

shaped ones. This analysis is only possible by combining the local x-ray diffraction with 

scanning electron microscopy on exactly the same islands. 

Figure: (a) Method illustration: elastic scattering from the spot illuminated by a focused x-ray beam is 

detected (ki and kf are the scattering vectors). The x-rays illuminate either the area in-between islands 

(b) or a single island (c). Only in the latter case, a broad x-ray diffraction signal due to lattice spacing 

distribution inside the SiGe island is observed. Tuning in reciprocal space to a position characteristic 

for the island [blue dot in (b), (c)] and scanning the sample laterally, higher intensity is observed 

whenever an island is illuminated by the x-ray spot, leading to an image of the island distribution (d). 

Overlaid to it are the island positions (squares) extracted from an optical microscopy image (e). (f) 

Similar to (d) for the (115) reciprocal lattice point. 








Phys. Rev. B 78, 121304(R) (2008) 

Imaging of nanoislands in coherent grazing-incidence 

small-angle x-ray scattering experiments 

A. V. Zozulya, 1 O. M. Yefanov, 1 I. A. Vartanyants, 1 K. Mundboth, 2,3 C. Mocuta, 2 

T. H. Metzger, 2 J. Stangl, 3 G. Bauer, 3 T. Boeck, 4 M. Schmidbauer 4 

Coherent x-ray scattering in a grazing-incidence geometry was used to image SiGe nanoislands 

grown by liquid phase epitaxy on Si(001). Due to their narrow size distribution, identical 

shape, and orientation, the total scattered intensity obtained in this geometry represents a 

coherent diffraction pattern from an average island. Iterative phase retrieval techniques [1,2] 

were used for the reconstruction of the projected electron density of hundred nanometer size 

islands, with a resolution of 10–15 nm so far unprecedented by other x-ray imaging methods. 

Figure: Left: GISAXS diffraction patterns measured for different island sizes (a) 50 nm, (b) 140 nm, 

(c) 200 nm, and (d) 1000 nm. SEM images of the samples with different magnification are presented 

in the insets. In panels (a)–(c) two diffraction patterns measured with a large beamstop and a small 

beamstop are superimposed. Each diffraction pattern is background subtracted. The logarithmic color 

scale corresponds to a dynamic range of 10 5 –10 6 . Right: (a) and (c) Results of the reconstruction of the 

island electron-density projections for 140 and 200 nm islands obtained from experimental GISAXS 

data. (b) and (d) For comparison, the reconstruction of a single island electron density obtained from a 

simulated GISAXS pattern is also shown. The size of the rectangular support region used in each reconstruction 

is indicated by a black line. The color gradient in arbitrary units is shown in the inset. The 

length scale is the same for all four figures but is different in vertical and horizontal directions. 

References 

[1] J. R. Fienup, Appl. Opt. 21, 2758 (1982). 

[2] V. Elser, J. Opt. Soc. Am. A 20, 40 (2003). 








Adv. Mater. 20 (2008) 3887 

Vacuum-Processed Polyaniline–C60 Organic 

Field Effect Transistors 

Mihai Irimia-Vladu 1 , Nenad Marjanovic 2 , Angela Vlad 3 , Alberto Montaigne Ramil 2 , 

Gerardo Hernandez-Sosa 4 , Reinhard Schwödiauer 1 , Siegfried Bauer 1 

and Niyazi Serdar Sariciftci 5 

We have developed evaporation processed polyaniline and C60 OFETs, with insulating polyaniline 

evaporated from precursor emeraldine base. The characteristics of the transistors are 

stable and reproducible and the fabrication method offers the versatility to adjust the operating 

voltage accordingly to the thickness of the deposited organic dielectric material. Operating 

voltages down to 2 V and on-off ratios of up to 3 orders of magnitude were measured. The 

ease of fabrication and the low cost of the precursor materials recommend the evaporation 

method as suitable for large-scale industrial production of OFETs such as roll to roll. 

Transfer and output characteristics 

of transistors featuring 

650nm polyaniline and 75nm 

C60; the top and bottom aluminum 

electrodes are 60nm thick 

(a,b). Transfer and output characteristics 

of transistors displaying 

100nm polyaniline and 25nm 

C60; the top and bottom aluminum 

electrodes are 40 and 60nm 

thick respectively (c,d). 

Affiliation: 

1 

Department of Soft Matter Physics, Johannes Kepler University Linz, Austria. 

2 

Plastic Electronic GmbH, Linz, Austria. 

3 

Institute of Applied Physics, Johannes Kepler University Linz, Austria. 

4 

Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Austria. 

5 

Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Austria. 

Funding: 

This work has been financially supported by the Austrian Science Foundation ‘‘FWF’’ within the National Research Network 

on Interface Controlled and Functional Organic Films, projects : NFN-S09712, NFN-S09706, and NFN-S9711. 

Corresponding author: mihai.irimia-vladu@jku.at


Adv. Func. Mat. 18 (2008) 1575 

Bipolar Charge Transport in PCPDTBT-PCBM 

Bulk-Heterojunctions for Photovoltaic Applications 

M. Morana 1 , M. Wegscheider 2 , A. Bonanni 2 , N. Kopidakis 3 , S. Shaheen 3 , M. Scharber 1 , Z. 

Zhu 4 , D. Waller 4 , R. Gaudiana 4 , and C. Brabec 1 

We study experimentally the transport properties of a low-bandgap conjugated polymer giving 

high photovoltaic quantum efficiencies in the near infrared spectral region. Using a organic 

thin film transistor geometry, we demonstrate a relatively high in-plane hole mobility, 

and quantify the electron mobility on a SiO2 dielectric. In addition, singular contact behavior 

results in bipolar quasi-Ohmic injection both from low and high workfunction metals like 

LiF/Al and Au. X-ray investigations revealed a degree of interchain p-stacking that is probably 

embedded in a disordered matrix. Disorder also manifests itself in a strong positive field 

dependence of the hole mobility from the electric field. In blends made with the electron acceptor 

methanofullerene [6,6]-phenyl C61 butyric acid methyl ester (PCBM), the transistor 

characteristics suggest a relatively unfavorable intermixing of the two components for the application 

to photovoltaic devices. We attribute this to a too fine dispersion of [C60]-PCBM in 

the polymer matrix, that is also confirmed by the quenching of the photoluminescence signal 

measured in PCPDTBT [C60]-PCBM films with various composition. We show that a higher 

degree of phase separation can be induced during the film formation by using 1,8octanedithiol 

(ODT), which leads to a more efficient electron percolation in the [C60]-PCBM. 

In addition, the experimental results, in combination with those of solar cells seem to support 

the correlation between the blend morphology and charge recombination. We tentatively propose 

that the drift length, and similarly the electrical fill factor, can be limited by the recombination 

of holes with electrons trapped on isolated [C60]-PCBM clusters. Ionized and isolated 

[C60]-PCBM molecules can modify the local electric field in the solar cell by build-up 

of a space-charge. The results also suggest that further improvements of the fill factor may be 

limited by a strong electrical-field 

dependence of the hole transport. 

Fig. 1 Photoluminescence spectra of 

PCPDTBT:[C60]-PCBM films 

prepared using a different fullerene 

content in the range 0–80 wt %, plot 

in the range 700–1100 nm. The 

legend shows the values of the 

relative polymer: fullerene ratios: 

pristine polymer, 1:0.1, 1:0.3, 1:0.5, 

1:0.7, 1:1, 1:2, 1:3, and 1:4. 

Affiliation: 

1 Konarka Austria GmbH, Linz, Austria. 


3 Konarka Technologies Inc., Lowell MA (USA).. 

4 National Renewable Energy Laboratory Bolden, CO (USA). 

Funding: 

FWF 

Corresponding author: matthias.wegscheider@jku.at



Terahertz Si:B blocked-impurity-band detectors defined 

by nonepitaxial methods 

P. Rauter 1 , T. Fromherz 1 , S. Winnerl 2 , M. Zier 2 , A. Kolitsch 2 , M. Helm 2 , G. Bauer 1 

The molecular beam epitaxial (MBE) fabrication of blocked-impurity-band detectors (BIB) 

[1] has been a technologically complex and delicate matter ever since its demonstration in 

silicon, and has not been adapted for other material systems offering detection onsets at lower 

terahertz frequencies. We report the fabrication and characterization of a vertical Si:B BIB, 

circumventing the intrinsically troublesome MBE growth of an ultrapure blocking layer by 

employing ion implantation. We present a thorough characterization of our device, which exhibits 

highly competitive figures of merits. Our results not only increase the accessibility of 

BIB fabrication tools for ultrasensitive terahertz detection but also open a road to other material 

systems. 

Figure: Left: Spatial variation in energy bands and impurity levels in a biased, slightely compensated 

boron doped Si (Si:B) BIB structure. The thick lines show the calculated bending of the valence (VB) 

and conduction band (CB) of the BIB detector at an externally applied voltage of 1.88 V. The thin 

lines indicate the impurity-band edges. The minus and plus symbols represent the ionized acceptor 

and donor atoms, respectively. Gain is achieved due to impact ionization of neutral acceptors within 

the depletion zone by free holes excited by the THz radiation from neutral acceptors of the impurity 

band into the VB. In our work, a BIB detector fabrication scheme that allows to establish these vertical 

acceptor and donor profiles by ion-implantation of Si-on-insulator (SOI) wafers was developed. The 

inset sketches a vertical cross section of the device together with the fabrication steps as developed in 

this work. Right: Responsivity and number of charge carriers per incident photon (external quantum 

efficiency) of the BIB detector at a THz photon energy of 50 meV. The detector exhibits high peak 

responsivity values of 65 A/W and external quantum efficiencies of up to 3, although in this regime 

dark currents (shown on an arbitrary ordinate axis) are high due to dark current gain. However, the 

onset of high dark current is shifted from the onset of PC gain by 70 mV. Within this work-point window, 

external quantum efficiency exceeds 0.5, while dark current is still insignificant, qualifying this 

structure for competitive BIB operation. 

References 

[1] M. D. Petroff, M. G. Stapelbroek, and W. A. Kleinhans, Appl. Phys. Lett. 51, 406 (1987). 

1 

Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University Linz, Austria. 

2 

Institute of Ion Beam Physics and Materials Research, Forschunsgzentrum Dresden-Rossendorf, Germany 


Corresponding author: thomas.fromherz@jku.at


Appl. Phys. Lett. 92 (2008) 261113 

Quantum dot nanocolumn photodetectors for 

light detection in the infrared 

M. Böberl 1 , M. V. Kovalenko 1 , G. Pillwein 1 , G. Brunthaler 1 , W. Heiss 1 

Colloidal quantum dots absorbing in the infrared are filled into nanoporous alumina membranes 

to form narrow columns with aspect ratios of 300:1. The columns define the charge 

carrier path vertical through the ordered pore structure of the membrane. Electrical transport 

and photocurrent of various quantum dot column photodetectors based on two different 

nanomaterials, namely HgTe and PbS quantum dots with different quantum dot sizes are investigated. 

Photocurrents up to long wavelengths of 3 �m are demonstrated. 

a) Scheme of the fabricated QD nanocolumn photodetectors. The QDs are filled into the pores 

of an alumina membrane and the photocurrent is measured through the membrane along the 

pores. The top view and cross sectional SEM images of an empty porous alumina membrane 

are shown in (b) and (c), respectively, and the and a top view and cross sectional image of a 

membrane filled with HgTe QDs with a size of 4 nm is shown in (d) and (e). The scale bars 

are 200 nm in (b) and (d) and 10 �m in (c) and (e). 

Affiliation: 


Funding: 

FWF, GME 



Nanotechnology 19 (2008) 355205 

Highly efficient (infra)red conversion of InGaN 

light emitting diodes by nanocrystals, enhanced 

by color selective mirrors 

J. Roither, M. V. Kovalenko, and W. Heiss 

The high quantum yield and environmental stability of colloidal nanocrystals (NCs), together 

with their high flexibility in terms of emission wavelength tuning and processability [1] 

makes them very favorable as nano-phosphors. White light is commercially obtained from 

light emitting diodes based on III-V nitride compound semiconductors by color conversion 

with cerium-based phosphors. The resulting color rendering index is, however, rather moderate 

in the low color-temperature region. To compensate this shortcoming, we introduce colloidal 

NCs as an alternative nano-phosphor. In particular, NC-polymer blends are deposited in 

form of films onto the enclosure of commercial InGaN light emitting diodes (LEDs) to operate 

as precisely color-tunable nano-phosphors for color conversion with high color stability. 

Dependent on the choice of the materials, either CdSe/ZnS or PbS NCs are applied, the diode 

emission is converted to the red or to infrared light, with similar quantum efficiencies. The 

color conversion is further improved by dielectric mirrors (DBRs) with high reflectivity at the 

emission band of the NCs, resulting in an almost doubling of the NC light extraction from the 

devices, which increases the NC device efficiency up to 19.1 %. 

(a) Emission spectra from sample series S1 

(solid lines) and S2 (dashed lines, full circles) 

for different deposited CdSe-NC quantities 

(NNCs). For S2, DBRs markedly improve the 

overall performance of the devices for color 

conversion, by redirecting the backward 

directed part of the NC emission into the halfspace 

in front of the device. For 9.85×10 12 , 

4.92×10 13 and 1.97×10 14 NCs, respectively, the 

color of the emission is given by the 

photographs taken from the top of the devices. 

(b) Spectrally integrated InGaN (squares) and 

NC emission (solid line) as a function of the 

LED forward current. The constant ratio across the whole operation range approves the 

excellent color stability. Operation over several days did not lead to any change of the red– 

blue ratio at all. The inset shows a photograph of the device with a PbS–PMMA film 

deposited on top. (c) Absorption spectrum (dashed line) of PbS NCs in solution, used as 

active material for near-IR color conversion. Emission spectrum (solid line) of a PbS LED 

device covered by 9.85×10 13 NCs. 

References: 

[1] J Lee, V C Sundar, J R Heine, M G Bawendi, and K F Jensen, Adv. Mater. 12 (2000) 1102. 

Affiliation: 


Funding: 

Financial support from the Austrian Science Foundation FWF (Project START Y179 and SFB 25-IRON) and the GME is 

gratefully acknowledged. 

Corresponding author: juergen.roither@jku.at

Annual Report 2008 - Institut für Halbleiter - JKU

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