The OTIS Reference Manual - Hasylab
The OTIS Reference Manual - Hasylab
The OTIS Reference Manual - Hasylab
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Table 7: <strong>OTIS</strong>1.2 DNL measured before and after the irradiation test.<br />
Figure 21: <strong>OTIS</strong>1.2 DNL measured before and after the irradiation test.<br />
summarises the single channels DNL measurement for both chips before and after the irradiation<br />
test. Like above, no significant perfoermance degradation is observed. <strong>The</strong> <strong>OTIS</strong> chip thus fulls<br />
the LHCb specifications (2 Mrad).<br />
8 List of Known Limitations<br />
�<strong>OTIS</strong>1.0<br />
– <strong>The</strong> data output pads (pads number 13 to 28) are implemented as LVDS pads though<br />
the serialiser chip GOL [2] requires single ended CMOS.<br />
– <strong>The</strong> memory self test shows a temperature dependency.<br />
– <strong>The</strong> dependency between the measured drift times and the arrival time of the detector<br />
signals is non-linear.<br />
�<strong>OTIS</strong>1.1<br />
– <strong>The</strong> bunch crossing counter shows erratic behavior due to underestimated driver strengths.<br />
– Big offset spread for ASD threshold voltages.<br />
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