計畫詳細資料 - NSRRC User Portal

計畫詳細資料
Beamtime Type: [PEC] [ ]線上申請
主持人/協同主持人 馮哲川 單位 國立台灣大學光電所
計畫期別 2009-2 申請日期 2009/01/12
計畫編號 2009-2-009-1 計畫領域 Surface, Interface and Thin Films
計畫名稱
經費來源
光束線編號 類別
20A1 / BM - (H-
SGM) XAS
參與實驗人員:
將使用之材料:
Soft x-ray absorption spectroscopy investigation on advanced semiconductor and oxide materials for
Taiwan industry and development
[ ] 國科會專題計畫
計畫編號: NSC 97-2221-E-002 -026
計畫名稱: 功率與微電子應用與發展之塊狀與磊晶碳化矽的創新研究(III)
本期申請時段 總時段 特殊需求
理想 最小 核可 申請 核可 已使用 光束線排程 實驗站
V 12 6 0 60 0 0
參與成員 擔任角色 職稱 單位
馮哲川 主持人 教授 國立台灣大學光電所
吳于立 協助實驗 碩士生 國立台灣大學光電所
吳宗翰 協助實驗 碩士生 國立台灣大學光電所
林澤暘 協助實驗 碩士生 國立台灣大學光電所
楊喻丞 協助實驗 碩士生 國立台灣大學光電所
藍右任 協助實驗 碩士生 國立台灣大學光電所
材料類別 材料名稱 攜帶量 預計使用量 單位
樣品 GaN, SiC, ZnO, Al2O3 100 60 piece
樣品 CNT,SiC,ZnMnO,ZnO 30 15 piece
將使用之主要設備:
BL20A1
無!!
設備名稱
陳錦明(Chen, Jin-Ming)
# 光束線發言人審核意見:
危害特性
無 毒性 易燃性 腐蝕性 氧化性 生化 其他
無 低溫冷凍 加熱設備
設備特性
高壓 雷射 高電壓 鈹窗 其他
� 20A1 - BM - (H-SGM) XAS: (X)同意 ( )不同意
# 安全組審核意見:
(X)同意 ( )不同意
# PEC 審查:
� VUV
# 審查意見: 無!!
安全考慮與防範措施
合作對象
計畫背景
審查意見
備註

A proposal to NSRRC:
Soft X-Ray Absorption Spectroscopy Investigation on Advanced Semiconductor
and Oxide Materials for Taiwan Industry and Development (Beamline: BL20A)
{from 馮哲川教授,國立台灣大學光電所,台北市 106 羅斯福路四段一號
Prof. Zhe Chuan Feng, Graduate Institute of Photonics & Optoelectronics and Department of
Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC
Office: Barry Lam Hall-417 (博理館 417 室); Tel: 886-2-3366-3543, Fax: 886-2-2367-7467
E-mail: fengzc@cc.ee.ntu.edu.tw; zhechuan_feng@yahoo.com;
Web: http://gipo.ntu.edu.tw/; http://www.ee.ntu.edu.tw/}
(A) Background
The principal investigator (P.I.), Z. C. Feng (馮哲川), and students at National Taiwan
University (NTU) had previously performed a proposal research with NSRRC, “Soft X-Ray
Near-Edge Absorption Fine Structure Spectroscopy Investigation on Semiconductor Materials”,
using Beamline of BL20A. Within the first exploration beam times of 8.3 shifts in 2008 July
29-August 1, we have obtained some useful data on ZnMnO, GaN/Si and related materials.
A1. Our preliminary data using BL20A
Soft X-Ray Absorption Spectroscopy (SXAS) data using BL20A have been obtained and
typical data near oxygen (O) K-edge and Zn L-edge are shown below.
Intensity
10000
5000
file: Zo-undoped
XAS Intensity
25000
20000
15000
10000
5000
O K-edge
ZnO bulk, undoped
520 530 540 550 560 570
O K-edge
Energy (eV)
ZnO:Co-doped
bulk
520 530 540 550 560 570
Energy (eV)
file: Zo-Co
Intensity
Intensity
1
30000 O K-edge
25000
20000
15000
10000
file:Zo-Ho
20000
15000
10000
5000
ZnO:Ho-doped, bulk
520 530 540 550 560 570
Energy (eV)
25000 O K-edge
file: Zo-Ga
ZnO:Ga-doped, bulk
520 530 540 550 560 570
Energy (eV)

Intensity
XAS Intensity
Intensity
40000
30000
20000
10000
file: Z130Sap
Intensity
20000
15000
10000
5000
O K-edge
ZnO on sapphire (Al O ) 2 3
MOCVD
520 530 540 550 560 570
O K-edge
Energy (eV)
520 530 540 550 560 570
Energy (eV)
Zn L-edge:
100000 Zn L-edge
80000
60000
40000
20000
60000
40000
20000
ZnO:Cu on Si
PECVD
ZnO+Cu(1) 2Pa T-R 30min (A-1)
1000 1010 1020 1030 1040 1050
Energy (eV)
Zn L-edge
ZnO:Cu on Si
PECVD
A-1,ZnO+Cu(1) 2Pa 205u 600C T-R 25min
ZnO on Sapphire
MOCVD
1000 1010 1020 1030 1040 1050
file: Z130Sap
Energy (eV)
Intensity
Intensity
2
30000 O K-edge
25000
20000
15000
10000
5000
file: Z130Si
Intensity
Intensity
20000
15000
10000
5000
file: Hf01d
100000
50000
60000
40000
20000
0
ZnO on Si
MOCVD
520 530 540 550 560 570
Energy (eV)
O K-edge
Nano-scale
HfO2 layer on Si
520 530 540 550 560 570
Zn L-edge
Energy (eV)
ZnO:Co-doped
bulk
0
1000 1010 1020 1030 1040 1050
Energy (eV)
file: Zo-Co
Zn L-edge
ZnO on Si
MOCVD
1000 1010 1020 1030 1040 1050
Energy (eV)
file: Z130Si

Intensity
100000
80000
60000
40000
20000
Zn L-edge
ZnO:Ho-doped
bulk
0
1000 1010 1020 1030 1040 1050
Energy (eV)
file: Zo-Ho
Intensity
3
120000
100000
80000
60000
40000
20000
Zn L-edge
ZnO :Mg:Li
co-doped bulk
0
1000 1010 1020 1030 1040 1050
Energy (eV)
file: Zo-MLb
The BL20A HSGM Beamline covers energy range of 60-1250 eV. It is suitable to perform
Soft X-Ray Absorption Spectroscopy (SXAS) measurements on not only above O K-edge (537 eV),
Zn L-edge (1020, 1043 and 1194 eV), but also C K-edge (284 eV) and N K-edge (402 eV). These
would be very useful for our research on wide gap semiconductors GaN, ZnO, SiC and oxides as
well as alloys/structure. Students are going on studying the program fitting and simulations on
above and future data. But our students may need to get more help and training from BL20A
experts on program fitting and simulations.
A2. Some useful reference works from literature
Fig. 1 displays C K-edge XANES spectra of N-CNTs with and without chlorine treatment and
the highly oriented pyrolytic graphite (HOPG) as a reference. The feature with the maximum
intensity at approximately 285.5 eV for HOPG was attributed to the π* antibonding state
originated from the out-of-plane bonds in the sp 2 bonding configuration. The positions of π*
resonance feature in the C (1s) XANES spectra of N-CNTs and N-CNTs: Cl located at ~286.4 and
286.7 eV, respectively, which are shifted by ~0.9 eV for N-CNTs and 1.2 eV for N-CNTs: Cl with
respect to that of HOPG (285.5 eV), correspond to the 1s→π*(e2u) transition as in the pyridinelike
sp 2 C–N structure. Fig. 2 displays the N K-edge XANES spectra of the N-CNTs and N-CNTs: Cl
samples. The two main features centered at ~403.2 and ~409.5 eV are associated with transitions
into unoccupied π* and σ* orbitals, respectively [1].
Fig. 3 shows the absorption spectra of all three investigated samples after normalization to the
same edge height: cubic GaN (a), nitrided GaAs (b), and hexagonal GaN (c). The angle of incidence
was chosen to be 38°. At this angle close to the so-called ‘‘magic angle’’ the spectra are directly
comparable because for surfaces with at least threefold symmetry the spectra are independent of the
orbital orientation. Fig. 4 shows the dependence of the absorption spectra on the angle of incidence
and thus on the direction of the polarization vector with respect to the sample surface. The aim of
these measurements is to determine the orientation of the a-GaN crystallites. The arrows in the
figure indicate the development of the intensities for increasing θ [2].

FIG. 1. C K-edge XANES spectra of FIG. 2. N K-edge XANES spectra of
unchlorinated/chlorinated N-CNTs and unchlorinated/chlorinated N-CNTs.
reference HOPG. The inset highlights The inset highlights the π* region [1].
the π* region [1].
FIG. 3. X-ray absorption spectra of hexagonal FIG. 4. Polarization dependent x-ray absorption
GaN (a), nitrided GaAs (001) (b), and cubic GaN (c). spectra of hexagonal GaN for angles of incidence
The angle of incidence was 38°, which is close to Θ between 0° and 64°. The geometry is sketched
the magic angle. Absorption features are marked in the upper right comer. The development of the
by vertical bars and labeled P1–P8. The bottom intensities for increasing off normal angles is
curve (d) represents the difference between given by the arrows [2].
spectrum (b) and a weighted average of the
spectra (a) and (b) with weighting factors of
0.2 and 0.8, respectively [2].
4

The TEY XANES spectra measured at different incident angles were shown in Fig. 5. The
sharp excitons at 285.4 and 291.5 eV are attributed to the dipolar transition of core level 1s electron
into the C–C π* and C–C σ* states in the conduction band, respectively. Two other σ*
transitions from 292 to 298 eV and broad (π+σ) transitions from 301 to 309 eV are also observed.
Two small peaks in 287–290 eV can be assigned to the oxygenated surface functionalities perhaps
associated with the defects of the nanotubes. The angular dependence of the π* and σ* excitations
can be understood by studying the electronic structure [3].
FIG. 5. Angle-resolved TEY XANES spectra of SWNT forest grown on silicon wafer. The inset shows the
incident geometry of π* vector orbitals and σ* planes for a vertical SWNT tube axis (along z) on Si wafer
with respect to the incident beam and the electric field vector E which remains perpendicular to the incident
x-ray beam [3].
The annealing-temperature dependence in valence-band photoemission spectra and O K -edge
absorption spectra for poly- Si/HfO2 /Si and HfO2 /Si are shown in Fig. 6 and Fig. 7 respectively.
Broad structures from EF to 4 eV and from 4 to 10 eV are derived from Si and O 2p components,
respectively. By the annealing at 700 °C, the intensity of SiO2 is increased due to the SiO2
formation at the upper interface. On the other hand, the decrease in the SiO2 component by 750 °C
annealing is related to the SiO2 consumption by the chemical reaction. Without the poly-Si layer,
the crystallization temperature of the HfO2 layer is not changed as shown in Fig. 7. It suggests that
the poly-Si layer does not affect the crystallization temperature of HfO2 [4].
5

FIG. 6. Annealing-temperature dependence of FIG. 7. Annealing-temperature dependence of
poly-Si/HfO2 /Si structures in (a) valence-band HfO2 /Si structures in (a) valence-band
photoemission spectra and (b) O K-edge absorption photoemission spectra and (b) O K-edge
spectra. Double peaks in XAS are assigned as HfO2 absorption spectra. Peak in XAS are assigned
and SiO2 [4]. as HfO2 and SiO2 [4].
FIG. 8 Normalized O K-edge XANES spectra of Zn1−xCoxO
and Zn1−xMgxO nanorods. The upper inset shows magnified
view of A1 and B1 features of the Zn1−xCoxO and Zn1−xMgxO
nanorods. The lower inset presents normalized Zn L3-edge
spectra of Zn1−xCoxO and Zn1−xMgxO nanorods [5].
Fig. 8 presents normalized O K-edge XANES
spectra of Zn1−xCoxO and Zn1−xMgxO nanorods.
Features A1–E1 of Zn1−xCoxO and Zn1−xMgxO are
attributable to electron transition from O 1s to
2pσ(along the bilayer) and O 2pπ(along the c axis)
states. The fact that the intensities of these features are
lower than those of ZnO (clearly seen in the upper inset)
shows that the number of unoccupied O 2p-derived
states is reduced, which can be interpreted as transfer of
electrons from Co and Mg dopants to O 2p states due to
6

O 2p–Co 3d and O 2p–Mg 3sp hybridizations in Zn1−xCoxO and Zn1−xMgxO nanorods, respectively.
Fig. 9(a) presents normalized Mg K-edge XANES spectra of Zn1−xMgxO nanorods, MgO, and Mg
metal. Spectral line shapes of the Mg metal clearly differ from those of the Zn1−xMgxO and MgO
samples hybridization. Fig. 9(b) presents normalized Co L3,2-edge XANES spectra of Zn1−xCoxO
nanorods, CoO, and Co metal, for transition of electrons from Co 2p3/2 (L3) and 2p1/2 (L2) states
to unoccupied Co 3d and 4s states. The general line shapes of the Co L3,2-edge XANES spectra of
the Zn1−xCoxO nanorods are similar to those of polycrystalline Zn1−xCoxO bulk/film [5].
FIG. 9. (a) Normalized Mg K-edge XANES spectra of Zn1−xMgxO nanorods, MgO, and Mg metal. (b) shows
Co L3,2-edge spectra of Zn1−xCoxO nanorods, CoO, and Co metal [5].
A3. Attractive works of soft XAS reported in 2008 from literature
FIG. 10. Several soft XAS spectra of Sr2FeMoO6
with additional total fluorescence yield (TFY).
Multiplet calculations for different Fe 2+ and Fe 3+
ratios are also shown in red lines [6].
7
Fig. 11. A series of C Kα RXES spectra from CDO
acquired at 298 eV, 289 eV, 287 eV, 286 eV and
280.5 eV for (i) to (v) respectively [7].

Quite recently, several attractive papers, using synchrotron radiation soft X-ray absorption
emission spectroscopy technology, have been just published in 2008, “Fe valence state of
Sr2FeMoO6 probed by x-ray absorption spectroscopy: The sample age matters” [6], “Electronic
structure characterization of ultra low-k carbon doped oxide using soft X-ray emission
spectroscopy” [7], “Transition layers at the SiO2 /SiC interface” [8], “Control of oxidation and
reduction reactions at HfSiO/Si interfaces through N exposure or incorporation” [9] and “Charge
transfer across the molecule/metal interface using the core hole clock” [10].
Figure 10 shows several soft XAS spectra taken for Sr2FeMoO6 with additional total
fluorescence yield (TFY) spectra recorded. Multiplet calculations for different Fe 2+ and Fe 3+ ratios
are also shown in red lines [6]. Fig. 11 gives a series of C Kα RXES spectra from CDO acquired at
298 eV, 289 eV, 287 eV, 286 eV and 280.5 eV for (i) to (v) respectively [7]. CDO (Carbon doped
oxide) is a ultra low-k (ULK) material with its k value less than 2.5, which is a good candidate for
new generation semiconductor IC application for dimension less than 50nm.
Fig. 11 shows (a) Z-contrast STEM image, (b) Si-L2,3 edge (99 eV) and (c) C-K edge (284 eV)
from the SiO2 /4H-SiC interface [8]. Fig. 12 shows photoemission spectra of (a) Hf 4f and (b) Si 2p
from the HfSiON film with the N2 partial pressure (PN2) dependence [9].
Fig. 11 (a) Z-contrast STEM image, (b) Si-L2,3
edge (99 eV) and (c) C-K edge (284 eV) of the SiO2
/4H-SiC interface [8].
8
Fig. 12. (a) Hf 4f and (b) Si 2p photoemission
spectra of the HfSiON film with the N2 partial
pressure (PN2) dependence [9].

P.I.’s long term collaborator, Prof. Andrew Thye Shen Wee (National University of Singapore)
and collaborators, have recently publish a good long review report “Charge transfer across the
molecule/metal interface using the core hole clock”, at Surface Science Reports [10]. Fig. 13 shows
Core-hole clock spectra for (a) a conjugated polymer of poly(para-phenylenevinylene) and (b)
BFF-SAM on Au(111) across the N k-edge absorption threshold [10]. Fig. 14 shows (a)
Synchrotron-based high-resolution C 1s core level PES spectrum of BFF-SAM on au(111)
measured with photon energy of 350 eV, and (b) corresponding C k-edge NEXAFS spectrum. The
right panel in Fig. 14 presents the detailed molecular structure of BFF-SAM with different carbon
species [10].
Fig. 13. Core-hole clock spectra for (a) a
conjugated polymer of poly(para-phenylenevinylene)
and (b) BFF-SAM on Au(111) across the N k-edge
absorption threshold [10].
9
Fig. 14. (a) Synchrotron-based high-resolution C
1s core level PES spectrum of BFF-SAM on Au(111)
measured with photon energy of 350 eV, and (b)
corresponding C k-edge NEXAFS spectrum. The
right panel shows the detailed molecular structure
of BFF-SAM with different carbon species [10].
A4. Some useful related works from other research groups in Taiwan
Prof. J. M. Chen, collaborators and others had performed a series of X-Ray Absorption
Spectroscopy (XAS) studies for superconductors and other materials. Two plots below showed the
Co L2,3-edge and O K-edge XNEAS and fits for superconductor [(Bi,Pb2Ba2O4±ω)]0.5CoO2 [11].
Soft-XAS using BL20A with Mn-L2,3 and (b) Sn-M3 for LSnMO film was studied [12].

Ref. [12]: FIG. 3. The x-ray absorption spectra of (a) Mn-L2,3 and (b) Sn-M3 for LSnMO film, respectively.
Spectra for various standard reference compounds are also displayed for comparison.
Below show the Cu L3,2-edge for LiCu2O2 [13] and Fe L3,2-edge for Sr2FeMo1−xNbxO6 [14] soft
X-ray absorption near edge spectra. In particular, ref. [14] is published in 2009 just a few days ago
as P.I. prepare this proposal.
10

(B) significance, objective, and expected outcome of the proposal
1. Significance
Research and development on wide energy gap semiconductors and structures for
optoelectronic and electronic applications have been very active in recent years [15-20]. III-nitride
semiconductors possess large direct band gaps, extremely high hardness, very large heterojunction
offsets, high thermal conductivity and high melting temperature. Great breakthroughs have been
achieved in recent years for their materials growth and device manufactures in applications in
blue-UV light emitting diode (LED), laser diode (LD) and other optoelectronic and electronic
devices. Taiwan industry for III-Nitride and III-V based LEDs have occupied an important position
in the world range, which has provided most of materials studied in this proposal. We hope to serve
for the further development of Taiwan industry in this field through our penetrating research
including by help of powerful synchrotron radiation facilities.
High energy and high intensity synchrotron radiation technology can be a powerful tool for
materials fundamental research. It is worthy to perform more wide and extended investigation on
those wide gap semiconductors, GaN, AlN, ZnO, SiC and oxides. To our previous experiences
(even not very many) Soft X-ray Near-Edge Absorption Fine Structure Spectroscopy can play an
11

important rule to promote research in this filed. A part of evidences have been presented in the
section (A).
2. Objective
We plan to use NSRRC Soft X-ray Absorption Spectroscopy end station at BL20A to perform
SR XAS and XES investigations on wide range of nano-structural materials and samples. Each
material will include samples of undoped, n-type and p-type doped with different doping levels,
varied compositions or growth conditions. These SR XAS and XES studies will be combined with
many other optical, structural and other materials analytical measurements to reach comprehensive
and penetrating understanding and control of materials properties.
3. Research distinguishing feature
The distinguishing features of the proposed research include: to get great potential in future
spintronics applications on ZnMnO and related materials, to use the most advantages of synchrotron
radiation technology which are unable to realize by ordinary XPS techniques. Using soft X-ray
absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES), we can obtained in depth
the knowledge and information about the electronic structures and states, electronic properties of
the surface and interface, chemical bonding states, oxidation states and Fermi level pinning on
ZnMnO, wide gap semiconductors, GaN, InN, AlN, InGaN, AlGaN, AlInGaN, SiC, ZnO, ZnMgO
and oxides of HfO2, Al2O3, Ga2O3, Si3N4, as well as related materials.
4. Expected Outcome
We’ve gotten all Near-edge X-ray absorption fine structure spectroscopy (NEXAFS) data for
planed materials. Data analyses and processing will be performed. The corresponding information
on the electronic structures and states, electronic properties of the surface and interface, chemical
bonding states, crystallite size, strain analysis and extended defects can be obtained. Their effects
from doping, composition and growth conditions should be gained, in combination with other
results from optical and structural measurements on these samples. These provide in-depth
knowledge on these advanced nano-semiconductors which are very useful to the R&D on these new
generation materials. We should get 2-3 good papers for high SCI level journals or important
international academic conferences per year. The work will lay a good foundation for further
extensive R&D on other materials using synchrotron radiation technology.
(C) Why Synchrotron Radiation is Needed
The principal investigator (P.I.), Z. C. Feng (馮哲川), and collaborators including students
have devoted in the research and exploration on various semiconductors and structures. We have
performed multiple optical and structural investigations on different semiconductors with high
values of outputs, for example, within only recent 3-years of 2006-2008, produced 25 SCI journal
12

papers, selectively listed as [21-26]. However, the ordinary optical and structural techniques are
limited in the exploration of materials properties in depth, which hindered the investigation in depth
on these materials. The experimental techniques of synchrotron radiation high energy XPS and
SR-XRD have been employed by us for further studies on semiconductor materials with significant
results [27-29]. Near-Edge X-ray Absorption Fine Structure Spectroscopy (NEXAFS) using
NSRRC beamline 17C for CdSeTe and CdZnTe alloys and MOCVD grown GaN on Si have been
recently leaded to a series of significant conference papers and reports [30-32], which will be soon
further going to make for high level journal papers. Also, NSRRC BL16A has been shown very
suitable for our wide gap semiconductor SiC materials for the Si K-edge NEXAFS measurements
[33]. High energy NEXAFS using BL17C with photon energy between 4-15 keV is suitable for
K-edges of Ga, Zn, Se, Ge, Mn, Fe, Cu etc. The BL20A with photon energy in 60-1250 eV is
powerful for soft x-ray near-edge absorption fine structure spectroscopy measurements on K-edges
of elements O, N, C, and L-edges of Zn and lighter elements, which have been approved by our
preliminary practice, listed in section A1, and others researches (A2, A3 and A4). So, we would have
NSRRC above three powerful beamlines for entire energy spectral range of our wide gap
semiconductors and oxides.
Soft x-ray near-edge absorption fine structure spectroscopy on semiconductors and related
materials can determine clearly their bulk electronic structure, electronic properties of the surface,
near edge x-ray absorption fine structure, electronic states in valence and conduction bands with
high energy resolution and advantage of the linear polarization of the synchrotron radiation and
careful crystallographic orientation of the samples, to reveal the concentration of oxidation states, to
identify the chemical bonding states of the buried silicon carbide layers and hydrogen-terminated
surfaces as well as the Fermi level pinning. These are very significant to understand these advanced
semiconductor materials. Near-edge X-ray absorption fine structure spectroscopy (NEXAFS) is a
particularly useful and effective technique for simultaneously probing the surface chemistry, surface
molecular orientation, degree of order, and electronic structure of III-Nitride, SiC- and ZnO-based,
various oxides and other materials which are extremely needed for our research.
(D) An estimate of the number of shifts required and the reason for using the beamline
We propose to use the beamline BL20A for K-edge XAS measurements on elements N, C and
O, and L-edge XAS for Zn, Mn, Co, Al, Mg, from our various advanced materials of GaN, InN,
AlN, SiN, CNTs, SiC (3C-, 4H- and 6H-polytypes), nano-HfO2 and Al2O3 on Si, ZnO, ZnMgO,
ZnMnO, ZnCoO, Ga2O3/GaAs and related materials. We propose to make a 2-years plan for a total
of 36-shifts, with 6-shifts per 4-months. We can adjust, increase or decrease the use of shifts per
4-months. After measurements, we perform data processing and theoretical analyses. And this study
is useful to further deepen our understanding for the physical and chemical properties of these wide
energy gap semiconductors and oxides.
13

(E) List of publications relevant to NSRRC beamlines during the preceding year
1. Publications (cited in above text)
[1] S. C. Ray, C. W. Pao and H. M. Tsai ed. “Electronic structures and bonding properties of chlorine-treated
nitrogenated carbon nanotubes: X-ray absorption and scanning photoelectron microscopy studies” Appl.
Phys. Lett. 90, 192107 (2007).
[2] M. Lubbe, P.R. Bressler and W. Braun ed. “Near edge x-ray absorption fine structure characterization of
polycrystalline GaN grown by nitridation of GaAs (001)” J. Appl. Phys. 86, 209 (1999).
[3] Zhongrui Li, Liang Zhang and Daniel E. Resasco ed.”Angle-resolved x-ray absorption near edge
structure study of vertically aligned single-walled carbon nanotubes” Appl. Phys. Lett. 90, 103115
(2007).
[4] H. Takahashi, J. Okabayashi and S. Toyoda ed. ”Mechanism of Hf-silicide formation at interface
between poly-Si electrode and HfO2 /Si gate stacks studied by photoemission and x-ray absorption
spectroscopy” J. Appl. Phys. 99, 113710 (2006).
[5] J. W. Chiou, H. M. Tsai and C. W. Pao ed. ”Comparison of the electronic structure of Zn1-xCoxO and
Zn1-xMgxO nanorods using x-ray absorption and scanning photoelectron microscopies” Appl. Phys. Lett.
89, 043121 (2006).
[6] K. Kuepper, M. Raekers, C. Taubitz, H. Hesse, M. Neumann, A. T. Young, C. Piamonteze, F. Bondino,
and K. C. Prince, “Fe valence state of Sr2FeMoO6 probed by x-ray absorption spectroscopy: The sample
age matters”, J. Appl. Phys. 104, 036103 (2008).
[7] I. Reid, Y. Zhang, A. DeMasi, G. Hughes, K.E. Smith, “Electronic structure characterization of ultra
low-k carbon doped oxide using soft X-ray emission spectroscopy”, Thin Solid Films 516, 4851 (2008).
[8] Tsvetanka Zheleva, Aivars Lelis, Gerd Duscher, Fude Liu, Igor Levin, and Mrinal Das, “Transition layers
at the SiO2 /SiC interface”, Appl. Phys. Lett. 93, 022108 (2008).
[9] H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda,
“Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or
incorporation”, Appl. Phys. Lett. 93, 212903 (2008).
[10] Li Wang, Wei Chen, Andrew Thye Shen Wee, “Charge transfer across the molecule/metal interface
using the core hole clock”, Surface Science Reports 63, 465–486 (2008).
[11] K. Sakai, M. Karppinen, J. M. Chen, R. S. Liu, S. Sugihara and H. Yamauchi, “Pb-for-Bi substitution
for enhancing thermoelectric characteristics of [(Bi,Pb2Ba2O4±ω)]0.5CoO2”, Appl. Phys. Lett. 88,
232102 (2006).
[12] T. Y. Cheng, C. W. Lin, L. Chang, C. H. Hsu, J. M. Lee, J. M. Chen, J.-Y. Lin, K. H. Wu, T. M. Uen, Y.
S. Gou, and J. Y. Juang, “Magnetotransport properties, electronic structure, and microstructure of
La0.7Sn0.3MnO3 thin films”, Phys. Rev. B 74, 134428 (2006).
[13] C. L. Chen, K. W. Yeh, D. J. Huang, F. C. Hsu, Y. C. Lee, S. W. Huang, G. Y. Guo, H.-J. Lin, S. M.
Rao, and M. K. Wu, “Orbital polarization of the unoccupied states in multiferroic LiCu2O2”, Phys. Rev.
B 78, 214105 (2008).
[14] B.-G. Park, Y.-H. Jeong, and J.-H. Park, J. H. Song, J.-Y. Kim, H.-J. Noh, H.-J. Lin and C. T. Chen,
“Physical properties and electronic evolution of Sr2FeMo1−xNbxO6 (0

[23] K. Y. Lo, Y. J. Huang, J. Y. Huang, Z. C. Feng, W. E. Fenwick, M. Pan and I. T. Ferguson, “Reflective
Second Harmonic Generation from ZnO thin films: A study on the Zn-O bonding”, Appl. Phys. Lett. 90,
161904 (2007).
[24] S. J. Wang, Nola Li, E. H. Park, Z. C. Feng, A. Valencia, J. Nause and I. T. Ferguson, “Metalorganic
Chemical Vapor Deposition of InGaN Layers on ZnO Substrates”, J. Appl. Phys. 102, 106105 (2007).
[25] Z. C. Feng, S. C. Lien, J. H. Zhao, X. W. Sun and W. Lu, “Structural and Optical Studies on
Ion-implanted 6H-SiC Thin Films”, Thin Solid Films, 516, no.16, 5217-5226 (2008).
[26] S. Sun, G. S. Tompa, C. Rice, X. W. Sun, Z. S. Lee, S. C. Lien, C. W. Huang, L. C. Cheng and Z. C.
Feng, “Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire”,
Thin Solid Films, 516, no.16, 5572-5277 (2008).
[27] Z.C. Feng, L.C. Cheng, C.W. Huang and Y.L. Wang, “Synchrotron Radiation X-ray Photoelectron
Spectroscopy and X-ray Diffraction Investigation on Si-based Structures for Sub-micron Si-IC
Applications”, TAIWAN-INDIA CONFERENCE ON NANOMATERIALS, Taoyuan, Taiwan, OS-07,
9-pages (2006).
[28] L. C. Cheng, F. C. Hou, Z. C. Feng, C. C. Tin, C. H. Kuan, Y. W. Yang, “Raman Scattering and X-ray
Photoelectron Spectroscopy Studies of Cubic Silicon Carbide grown on Si(100) by Chemical Vapor
Deposition”, International Workshop on Widegap Semiconductors (IWWWS) 2007, 6-pages, CD-1.
[29] S. Sun, G. S. Tompa, C. Rice, X. W. Sun, Z. S. Lee, S. C. Lien, C. W. Huang, L. C. Cheng and Z. C.
Feng, “Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire”,
Thin Solid Films, 516, no.16, 5572-5277 (2008).
[30] Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, Ian Ferguson, and Weijie Lu, “X-ray Absorption
Fine-structure Spectroscopy Investigation on CdSeTe Alloys for Photovoltaic Application”, International
Electron Devises and Materials Symposia (IEDMS) 2008, 4-pages, CD-496.
[31] Yi-Li Tu, Yen-Ting Chen, Zhe Chuan Feng, N.C. Chen, Jyh-Fu Lee, “X-ray Absorption Fine-Structure
Spectroscopy Investigation of GaN Thin Films on Si”, International Conference on Optics and Photonics
in Taiwan (OPT) 2008, Taipei, 4-pages, CD Sat-S32-02.
[32] Yen-Ting Chen, Yu Li Wu, Zhe Chuan Feng, Jyh-Fu Lee, and Weijie Lu, “X-ray Absorption
Fine-structure Spectroscopy on CdZnTe Ternary Alloys”, International Conference on Optics and
Photonics in Taiwan (OPT) 2008 & International Symposium on Solar Cell Technology (ISSCT) 2008,
Taipei, 4-pages, CD Sat-S26-02.
[33] Yi-Li Yu, Tse-Yang Lin, Zhe Chuan Feng, Ling-Yun Jang, and Weijie Lu, “Synchrotron Radiation
X-Ray Absorption Spectroscopy Investigation on Bulk SiC Materials”, NSRRC 2008 user meeting and
symposia.
2. abstract title for NSRRC users' meeting
Synchrotron radiation Soft X-ray absorption spectroscopy investigation on advanced
semiconductors and oxides for Taiwan industry application.
2. abstract title for
Soft X-ray absorption spectroscopy studies on advanced semiconductors and oxides for LED
industry application by help of synchrotron radiation technology.
(F) List of publications relevant to synchrotron radiation within past five years
1. from others:
[1-14] listed in E1 already, not repeated.
2. from our own works:
[29-33] listed in E1 already, not repeated.
15

Appendix PI’s Brief bibliography
Prof. Zhe Chuan FENG, received the BS and M.S. from Peking University, engaged in
semiconductor growth, process, devices fabrication, test, semiconductor lasers and waveguide
optics, college teachings till 1982 in China. Since late 1982, he has moved to USA and has been a
US citizen. He studied and got the Ph. D in University of Pittsburgh, 1987. He had worked at
Emory University (1988-92), National University of Singapore (92-94), Georgia Tech (95),
EMCORE Corporation (95-97), Institute of Materials Research & Engineering, Singapore
(98-2001), Axcel Photonics (2001-02) and Georgia Tech (2002-03), in all places with fruitful
results and achievements. Since August 2003, Feng has joined National Taiwan University as a
professor at Graduate Institute of Electro-Optical Engineering & Department of Electrical
Engineering, currently focusing on MOCVD growth and investigation of wide energy gap and
nano-structural semiconductors of III-Nitrides, SiC and ZnO, as well as III-V and other
semiconductor and oxides materials and devices.
Feng has edited and published seven review books on advanced compound semiconductors
and microstructures, porous Si, SiC and III-Nitrides materials, devices and nano-engineering, and
published ~380 scientific/technical papers with ~150 selected by Science Citation Index and cited
>1500 times. He has been symposium organizer and invited speaker in different international
conferences and universities, Guest Editors of two international journals: Thin Solid Films, and
Surface & Coatings Technology, for two special issues (2006), a reviewer of Physics Review
Letters, Physics Review B, IEEE Photonics Technology Letters and several other international
journals. He is currently the 理事 of 台灣鍍膜科技協會 http://www.tact.org.tw/, a member of
International Organizing Committee of Asian Conferences on Chemical Vapor Deposition, and
visiting/Guest professors at Nankai University, Tianjin Normal University and Huazhong University
of Science & Technology. Details can be seen from his webs in: http://www.ee.ntu.edu.tw/;
http://www.gipo.ntu.edu.tw/.
16