Power Electronics Packaging Solutions for Device Junction ...
Power Electronics Packaging Solutions for Device Junction ...
Power Electronics Packaging Solutions for Device Junction ...
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Page 1<br />
EPRC – 12<br />
Project Proposal<br />
<strong>Power</strong> <strong>Electronics</strong> <strong>Packaging</strong><br />
<strong>Solutions</strong> <strong>for</strong> <strong>Device</strong> <strong>Junction</strong><br />
Temperature over 220 o C<br />
15 th August 2012<br />
IME Proprietary
Page 2<br />
Motivation<br />
• Increased requirements of high power semiconductor device module <strong>for</strong> future<br />
automotive, aerospace and green & renewable energy industry<br />
• Emerging wide band gap power devices : SiC and GaN can be operated >220 o C<br />
Renewable energy<br />
Aerospace<br />
Electronic Vehicle<br />
Hybrid Vehicle<br />
Source: Nissan<br />
Electronic Railway<br />
Source: Toyota<br />
2<br />
Source: Infineon<br />
IME Proprietary<br />
Source: Yole
Page 3<br />
Technology Trends<br />
• Technology trends <strong>for</strong> high power module and discrete :<br />
� High temperature endurable materials >220 o C (silver sintering, encapsulations)<br />
� High reliable and low stress interconnections (foil interconnects, ultrasonic bonding)<br />
� Thermal cooling solution (Dual-side cooling / micro-channel cooling )<br />
Source: Yole<br />
3<br />
IME Proprietary
Page 4<br />
4<br />
Challenges to be Addressed<br />
<strong>Power</strong> Module<br />
Encapsulation Materials Plastic case<br />
• Thermal endurance >220C<br />
• Void free processing<br />
Encapsulations<br />
• Lower stress (CTE, Modulus)<br />
• High power insulation<br />
Diode<br />
IGBT<br />
• Moisture barrier<br />
• Delamination free<br />
DBC substrate<br />
<strong>Power</strong> <strong>Device</strong> Attach<br />
• Thermal endurance >220C<br />
• Void free processing<br />
• Lower stress (CTE, Modulus)<br />
• Electrical conductive<br />
• Die backside metallization<br />
<strong>Power</strong> Source Interconnection<br />
• <strong>Power</strong> cycling endurance<br />
• Temp cycle endurance<br />
• Process optimization<br />
• inter-metallic diffusion<br />
• Thermal & Electrical properties<br />
Substrate (DBC)<br />
• Temp cycling endurance<br />
• Adhesion with Encapsulation<br />
• Adhesion between Cu/Ceramic<br />
• Surface finish<br />
• Thermal & Electrical properties<br />
Base plate<br />
<strong>Power</strong> Discrete<br />
Wire<br />
IGBT<br />
Heat spreader<br />
Base plate (system board)<br />
Reliability testing methodologies<br />
• Reliability test spec<br />
• Reliability testing method<br />
• Failure Analysis / reliability model<br />
Wire<br />
Passive<br />
Lead frame<br />
IME Proprietary<br />
Passive component attach<br />
• Thermal endurance >220C<br />
• Void free processing<br />
• Temp cycle endurance<br />
• Electrical conductive<br />
• Metallization > 220C<br />
Thermal interface materials<br />
• Thermal endurance > 220C<br />
• Temp cycle endurance<br />
• Delamination & fracture<br />
• Thermal conductivity<br />
Modeling and predictions<br />
• Thermal characterization<br />
• Mechanical characterization<br />
• Electro-thermal-mechanical coupling<br />
• Reliability model (power cycling)
Page 5<br />
Objective<br />
Project Proposal<br />
IME Proprietary<br />
Development and characterization of power semiconductor packages <strong>for</strong> high junction<br />
temperature endurable (>220 o C) solutions <strong>for</strong> next generation devices, including the following:<br />
Material solutions <strong>for</strong> TV1 and TV2<br />
� High temperature endurable die attach (Ag sintering, TLP bonding, Cu-Cu bonding)<br />
� DBC surface finish option (Ni/Au finish, ENIG )<br />
� High temperature endurable encapsulation materials (High T g EMC)<br />
� Cu based interconnection through EMWLP RDL process<br />
Thermal management solutions <strong>for</strong> TV1 and TV2<br />
� Dual side cooling structure package development and packaging process optimization<br />
� High temperature endurable, high conductive TIM materials ( Ag sintering )<br />
Package characterization and Reliability <strong>for</strong> TV1 and TV2<br />
� Mechanical &Thermal modeling and characterization<br />
� <strong>Power</strong> cycling modeling : electro-thermal- mechanical coupled analysis<br />
� Reliability and failure analysis<br />
Conventional <strong>Power</strong> Module<br />
Diode<br />
Plastic case<br />
Encapsulations<br />
DBC substrate<br />
Wire<br />
Base plate<br />
IGBT<br />
IGBT<br />
Base plate (system board)<br />
Wire<br />
Passive<br />
Conventional <strong>Power</strong> discrete *<br />
Lead frame<br />
TV1* : Novel Dual side cooling <strong>Power</strong> Module<br />
Top RDL layer<br />
Diode<br />
Heat spreader<br />
Heat spreader<br />
Heat spreader IGBT<br />
* Conventional test vehicle with new material option can be considered<br />
as project test vehicle on the basis of members assembly support<br />
* To be finalized with members input<br />
IGBT<br />
TV2* : Novel Dual side cooling <strong>Power</strong> Discrete<br />
Heat spreader<br />
Heat spreader
Page 6<br />
Design Optimization and Reliability Prediction <strong>for</strong><br />
<strong>Power</strong> Module/Discrete with Dual Side Cooling<br />
� Structural modeling and interconnection<br />
life prediction <strong>for</strong> novel dual side cooling<br />
power module<br />
� <strong>Power</strong> source/gate/drain RDL design<br />
optimization <strong>for</strong> stress minimization<br />
� Interconnection fatigue life prediction (plastic<br />
constitutive model <strong>for</strong> Cu RDL)<br />
� <strong>Packaging</strong> material properties effect on the<br />
investigation<br />
� Electro-thermo-mechanical coupled power<br />
cycling impact modeling<br />
� Thermal modeling and characterization<br />
� Thermal resistance modeling <strong>for</strong> selected<br />
material set and design<br />
� Experimental Thermal resistance<br />
Rth jc characterization<br />
� Liquid based active cooling investigation<br />
IME Proprietary<br />
Ref. Hua Lua et al. “Lifetime Prediction <strong>for</strong> <strong>Power</strong> <strong>Electronics</strong><br />
Module Substrate Mount-down Solder Interconnect”<br />
Proceedings of HDP’07<br />
Ref. Institute of Microelectronics<br />
Dual side cooling effect T jmax decreased compared with<br />
single side cooling
� High Temperature <strong>Power</strong> <strong>Device</strong><br />
interconnection development<br />
� High temperature endurable die attach (drain)<br />
� Micro/Nano Ag sintering (pressure less)<br />
� TLP bonding : Cu-Sn(415 o C), Ag-Sn(480 o C)<br />
� Direct Cu-Cu ultrasonic bonding<br />
� <strong>Device</strong> backside metallization<br />
� Substrate surface finish option (Ni/Au finish, ENIG)<br />
� <strong>Power</strong> source and gate interconnect through<br />
Electrolytic Cu Patterning<br />
� High Temperature Endurable Compounds<br />
Development<br />
� High glass transition temperature (T g >200 o C)<br />
� High thermal conductive compounds (~3W/m-K )<br />
� Compatible with Wafer level fan-out process<br />
� Investigation on thermal degradation (< 3%wt) with<br />
continuous exposure to 220 o C<br />
� Low stress, low thermal mismatch<br />
Page 7<br />
High Temperature Endurable Materials <strong>for</strong> <strong>Power</strong><br />
Module with Tjmax> 220oC Ref. Institute of Microelectronics<br />
Micro Ag particles sintered by pressure less process<br />
IME Proprietary<br />
TLP bonding (Cu-Sn) used in Infineon XT modules in 2010<br />
Chin-Lung Chiang et.al “Thermal stability and degradation<br />
kinetics of novel organic/inorganic epoxy hybrid…”<br />
Thermochimica Acta 453 (2007)<br />
thermal degradation<br />
kinetics <strong>for</strong> epoxy
Page 8<br />
High Temperature Endurable Materials <strong>for</strong> <strong>Power</strong><br />
Module with T jmax> 220 o C<br />
� Thermal Interface Material investigation<br />
� High conductive /temperature endurable<br />
� Metallic TIM (Ag sintering) with high power insulation<br />
layer (Al 2O 3)<br />
� Polymeric TIM with conductivity > 4W/m-K<br />
� Thickness control<br />
� Thermal per<strong>for</strong>mance consistency investigation after<br />
reliability test<br />
� High Temperature Endurable Dielectric<br />
passivation layer<br />
� High glass transition temperature (T g >200 o C)<br />
� BCB, Polyimide photo sensitive PR<br />
� Compatible with Wafer level fan-out process<br />
� Investigation on thermal degradation (< 3%wt) with<br />
continuous exposure to 220 o C<br />
� Low stress, low thermal mismatch<br />
Source : Danfoss<br />
Ag sintering <strong>for</strong> TIM<br />
TIM layer crack propagation<br />
Source : Danfoss<br />
IME Proprietary
Page 9<br />
Dual Side Cooling <strong>Power</strong> Module Process<br />
Optimization and Reliability Assessment<br />
� Dual side Cooling <strong>Power</strong> Module Assembly<br />
Process development<br />
� Cu clip (Ag plated) attachment / alignment<br />
� Evaluation of molding material Liquid, Granular<br />
� Process condition (Temperature, time, pressure)<br />
� Module shift analysis & control<br />
� Die/ module pick & place tolerance<br />
� Minimum clearance between die<br />
� Warpage control<br />
� Heat spreader attach and TIM process<br />
� Reliability Assessments <strong>for</strong> High <strong>Power</strong><br />
Application<br />
� Temperature cycling (Test condition : TBD* 1 )<br />
� High Temperature Storage ( 220 o C/ 1000 hrs )<br />
� HAST (non-biased)<br />
� <strong>Power</strong> Cycling test (optional* 2 )<br />
� Failure analysis<br />
*1 To be finalized with members input<br />
*2 Need member’s support on actual SiC wafer and testing<br />
IME Proprietary<br />
IME’s Novel Dual side Cooling <strong>Power</strong><br />
Module Assembly Process<br />
Tilo Poller et al. “Influence of thermal cross-couplings on<br />
power cycling lifetime of IGBT power modules” CIPS 2102<br />
<strong>Power</strong> cycling : IGBT with 300W,10Hz
Page 10<br />
IME Proprietary<br />
� Thermal and Structural optimization and life prediction <strong>for</strong> novel dual<br />
side cooling power module<br />
� Interconnection fatigue life prediction (plastic constitutive model <strong>for</strong> Cu RDL)<br />
� <strong>Packaging</strong> material properties effect on the test vehicle<br />
� Thermal modeling characterization <strong>for</strong> selected material set and test vehicles<br />
� Electro-thermo-mechanical coupled power cycling impact analysis<br />
� T jmax >220 o C : High Temperature Endurable <strong>Power</strong> <strong>Device</strong> <strong>Packaging</strong><br />
material <strong>Solutions</strong> (interconnect/encapsulation/TIM)<br />
� High temperature endurable die attach material characterization using Micro/Nano<br />
Ag sintering, TLP bonding, Direct Cu-Cu ultrasonic bonding<br />
� <strong>Power</strong> source and gate interconnect through Electrolytic Cu Patterning<br />
� Wafer level Fan-out compatible compounds characterization<br />
� TIM process optimization <strong>for</strong> dual side application<br />
� Dual side Cooling <strong>Power</strong> Module Assembly Process development<br />
� Copper clip (Ag plated) attachment / alignment<br />
� Mold Process condition optimization (Temperature, time, pressure)<br />
� Heat spreader attach and TIM process<br />
� Reliability Assessments & F/A <strong>for</strong> Novel High <strong>Power</strong> Module<br />
� Temperature cycling<br />
� High Temperature Storage / Low Temperature Storage<br />
� HAST (non-biased)<br />
� <strong>Power</strong> Cycling test (optional)<br />
� Failure analysis<br />
* To be finalized<br />
Possible Research Outcome*
Page 11<br />
Members Inputs<br />
Thermal Modeling &<br />
Simulation Analysis<br />
TV1,2 Dual cooling effect<br />
<strong>Power</strong> cycling modeling<br />
Electro-Thermo-mechanical<br />
Project Time line and<br />
schedule :<br />
Nov 2012 to June 2014<br />
Project Flow<br />
Finalize Project scope and test vehicles<br />
specifications<br />
Identify high thermal endurable<br />
materials and evaluation<br />
(Members to provide inputs)<br />
Mechanical Modeling &<br />
Simulation Analysis on stress and<br />
reliability<br />
Test methodologies<br />
(Thermal and Reliability )<br />
TV1 Thermal per<strong>for</strong>mance sample matrix<br />
TV2 Thermal per<strong>for</strong>mance sample matrix<br />
TV2 Reliability test sample matrix<br />
TV1 Reliability test sample matrix<br />
Thermal per<strong>for</strong>mance testing<br />
Dual side cooling effect analysis<br />
with active cooling<br />
Initial Material evaluation and quick<br />
reliability test<br />
<strong>Power</strong> module EWLP Assembly<br />
process optimization. <strong>Device</strong> chip*<br />
(fabrication/purchase)<br />
Reliability testing<br />
Failure analysis and report writing<br />
IME Proprietary<br />
Scope Planning<br />
Material investigation<br />
Process and assembly<br />
Modeling & characterization<br />
Final reliability<br />
EWLP process<br />
modeling –<br />
flow/Warpage<br />
Note: * Electric testing will be carried<br />
out based on device chip availability
Page 12<br />
IME Proprietary
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