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BES - SLAC Group/Department Public Websites - Stanford University

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FYO7 <strong>SLAC</strong> S CIENCE AND T ECHNOLOGY S ELF E VALUATION<br />

function of the bias energy; (2) Proposed a way to eliminate spin decay in semiconductors due to<br />

spin-orbit coupling, in the process discovering a new type of SU(2) spin rotation symmetry. Both the<br />

theory and the experimental papers have been published in Phys. Rev. Lett.; (3) Predicted a new<br />

topological quantum phase transition between a conventional insulator and a Quantum Spin Hall<br />

state. The latter is characterized by a single pair of helical edge states. The group proposed to look<br />

for this effect in HgTe/CdTe semiconductor quantum wells. This paper has been published in<br />

Science.<br />

Using Local Probes for the Study of Nanoscale Phenomena in Complex Materials (A.<br />

Kapitulnik, H. Manoharan, K.A. Moler): In magneto optics, the Polar Kerr effect (PKE) in the<br />

spin-triplet superconductor Sr2RuO4 was measured with high precision using a Sagnac interferometer<br />

with a zero-area Sagnac loop. This material is presently of wide interest to the theory community as<br />

both an unconventional superconductor and a candidate material for quantum computation. PKE is<br />

sensitive to time reversal symmetry (TRS) breaking since it measures the existence of an<br />

antisymmetric contribution to the real and imaginary parts of the frequency-dependent dielectric<br />

tensor. Our results imply a broken time reversal symmetry state in the superconducting state<br />

Sr2RuO4. While our experiment determines that TRS is broken, coupled with other experiments it is<br />

strong evidence in favor of p+ip order parameter. Physics Today and Science featured the results. In<br />

Magnetic Imaging, a He-3 based scanning Hall probe microscope with a new generation of Hall<br />

probes with 100 nm spatial resolution was developed. An instrumentation paper on this topic was<br />

submitted to Applied Physics Letters. In High Resolution STM Studies, we observed the<br />

propagation of localized phonon modes through a 2D electron gas on the surface of Cu(111) by using<br />

molecular impurities, atomic manipulation, and inelastic tunneling spectroscopy. In addition,<br />

inelastic tunneling measurements were performed on diamondoid solids to look for vibrational<br />

structure. Mapping of electronic structure of diamondoid monolayers as a function of molecule<br />

packing arrangement was completed. In the area of scanning tunneling spectroscopy (STS) on<br />

ordered electronic structures, we used STS to study the unidirectional CDW system TbTe3. Using<br />

large area scans in a wide range of bias-voltage, a previous ambiguity was resolved regarding the size<br />

of the CDW wave-vector. Evidence was shown of the fully incommensurate nature of the CDW.<br />

Topographic data at different bias-voltage highlight two spontaneous symmetry-breaking effects in<br />

breaking the lattice point group symmetry by forming the 1D CDW, and the effect of dimerization,<br />

both demonstrated in real space for the first time.<br />

Behavior of Charges, Excitons and Plasmons at Organic/Inorganic Interfaces (M. D. McGehee,<br />

N. Melosh, M. Brongersma): As electronic device dimensions shrink to nanometer scales and the<br />

range of desirable applications grows, two trends are emerging. First, the range of materials under<br />

serious development is growing and many device structures consist of both organic and inorganic<br />

building blocks. Second, many physical phenomena that were heretofore only observed within<br />

academic experiments are becoming important for technologically relevant devices. Consequently,<br />

many technical issues need to be solved before these new possibilities become technologically<br />

viable. These include reproducible device performance on this length scale, sample heterogeneity,<br />

interface state control, defect properties, thermal transport and surface roughness. In addition,<br />

physical phenomena such as electron tunneling, Förster coupling, and plasmon-excitation quenching<br />

begin to severely impact device behavior at length scales less than 10 nm. This is particularly true<br />

within the emerging subset of structures that utilize both organic and inorganic materials, such as<br />

solar cells, electronic paper, molecular electronics, and organic light emitting displays. Our team has<br />

identified the need to understand excited state behavior within organic species close to inorganic<br />

surfaces as a key problem for future applications of these materials.<br />

Excited state phenomena within organic materials are often complicated by the multiple length<br />

scales, morphology, multiple competing decay processes, and inorganic surface interactions that<br />

affect the overall behavior of the system. Current studies of realistic devices are complicated by<br />

simultaneous excitation decay via a number of different processes within different regions of the<br />

F I N A L P A G E 2 7

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