高濃度ボロンドープ試料の角度分解X線光電子分光による濃度分布解析

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p +

K. Tsutsui et al., JAP, 104 (2008) 093709.

hν=500eVXXPS

(SPring-8 BL27SU)

B1s

B1s, Si2p 3/2

IMFP1nm

B

Si0.5nm

XPSB

30nmSIMS

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Technology Scaling and Roadmap for 22nm CMOS and beyond

RRAM - An Emerging Non-volatile Memory Technology

Effect of Post Metallization Annealing for La 2 O 3 Thin Film

Lg Plasma Doping SIMS profiles of plasma doped (PD) samples K. Tsutsui et al., JAP, 104 (2008) 093709. w/o RTA Anneal Diffusion Xj after spike-RTA year 2011 2012 2013 2014 2015 L g (nm) 24 22 20 18 17 Xj (nm) 10.5 9.5 8.7 8.0 7.3 (ITRS 2010 update, High performance) +FLA 2

p + K. Tsutsui et al., JAP, 104 (2008) 093709. hν=500eVXXPS (SPring-8 BL27SU) B1s B1s, Si2p 3/2 IMFP1nm B Si0.5nm XPSB 30nmSIMS 3

Page 1: X Concentration depth profiling of
Page 5 and 6: (abruptness) Undrestimation of surf
Page 7 and 8: O 3 HF (0.5nm) XPS c c 0 = ( z) TO
Page 9 and 10: B1sSi2p Intensity (Arb. Units) Inte
Page 11 and 12: Intensity ratio (Arb. Units) I(BO)
Page 13 and 14: Si B concentration (cm -3 ) (x10 21

高濃度ボロンドープ試料の 角度分解X線光電子分光による 濃度分布解析

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高濃度ボロンドープ試料の角度分解X線光電子分光による濃度分布解析