Datasheet / Datenblatt DD800S17H4_B2 - Infineon

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
DD800S17H4_B2
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
Spitzenverlustleistung
Maximumpowerdissipation
Mindesteinschaltdauer
Minimumturn-ontime
Tvj = -40°C
Tvj = 25°C
Tvj = 150°C
VorläufigeDaten
PreliminaryData
VRRM
1570
1700
1700
IF 800 A
tP = 1 ms IFRM 1600 A
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
I²t
105
95,0
V
kA²s
kA²s
Tvj = 125°C PRQM 800 kW
ton min 10,0 µs
CharakteristischeWerte/CharacteristicValues min. typ. max.
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
IF = 800 A, VGE = 0 V
IF = 800 A, VGE = 0 V
IF = 800 A, VGE = 0 V
IF = 800 A, - diF/dt = 6500 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
IF = 800 A, - diF/dt = 6500 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
IF = 800 A, - diF/dt = 6500 A/µs (Tvj=150°C)
VR = 900 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
IRM
Qr
Erec
1,80
1,90
1,95
900
1000
1050
190
320
360
110
200
230
2,10
2,10
proDiode/perdiode RthJC 48,0 K/kW
proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
RthCH 33,0 K/kW
Tvj op -40 150 °C
preparedby:WB
approvedby:PL
dateofpublication:2013-11-05
revision:2.2
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