VIII.2. A Semiconductor Device Primer

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If the majority carrier concentration is much greater than the concentration due to minority injection (“low-level injection”), the hole concentration at the edge of the p-region remains essentially at the equilibrium value. Consequently, the enhanced pn-product increases the electron concentration. n p ( 0) = n p0 q V / k Correspondingly, the hole concentration in the n-region at the edge of the depletion zone becomes p ( 0) = p n n0 Introduction to Radiation Detectors and Electronics Copyright © 1998 by Helmuth Spieler VIII.2.a. A Semiconductor Device Primer, Doping and Diodes e e e B q V / k e B T T
Energy band diagrams showing the intrinsic Fermi level Ψ, the quasi-Fermi levels for electrons Φn and holes Φp , and the carrier distributions for forward (a) and reverse bias conditions (b). p n p n forward bias reverse bias (from Sze) Introduction to Radiation Detectors and Electronics Copyright © 1998 by Helmuth Spieler VIII.2.a. A Semiconductor Device Primer, Doping and Diodes
Page 1 and 2: VIII.2. A Semiconductor Device Prim
Page 3 and 4: The number of occupied electron sta
Page 5 and 6: With these simplifications the numb
Page 7 and 8: 2. Carrier Concentrations in Doped
Page 9 and 10: It is often convenient to refer all
Page 11 and 12: Equilibrium is attained when the tw
Page 13 and 14: As either NA or ND increases relati
Page 15 and 16: 4. The Forward-Biased p-n Junction
Page 17 and 18: This yields the solution n p ( x) =
Page 19: Since the two electron currents mus
Page 23 and 24: Since the equilibrium concentration
Page 25 and 26: Note that in the diode equation a)
Page 27 and 28: However, on a logarithmic scale it
Page 29: The discrepancies between the measu

VIII.2. A Semiconductor Device Primer

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