VIII.2. A Semiconductor Device Primer
VIII.2. A Semiconductor Device Primer
VIII.2. A Semiconductor Device Primer
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It is often convenient to refer all of these quantities to the intrinsic<br />
level Ei , as it accounts for both Ec and Ev. Then<br />
n =<br />
p =<br />
N<br />
N<br />
and the Fermi level<br />
E<br />
F<br />
c<br />
v<br />
e<br />
e<br />
−(<br />
Ec−<br />
EF<br />
) / kBT<br />
−(<br />
EF<br />
−Ei<br />
) / k<br />
= nie<br />
−(<br />
EF<br />
−Ev<br />
) / kBT<br />
−(<br />
Ei<br />
−E<br />
= nie<br />
N<br />
− E = −k<br />
T log<br />
i<br />
B<br />
Variation of Fermi level with doping and temperature, including<br />
narrowing of the band gap with temperature:<br />
(from Sze)<br />
Introduction to Radiation Detectors and Electronics Copyright © 1998 by Helmuth Spieler<br />
<strong>VIII.2.</strong>a. A <strong>Semiconductor</strong> <strong>Device</strong> <strong>Primer</strong>, Doping and Diodes<br />
A<br />
i<br />
F<br />
− N<br />
n<br />
B<br />
) / k<br />
D<br />
B<br />
T<br />
T