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VIII.2. A Semiconductor Device Primer

VIII.2. A Semiconductor Device Primer

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It is often convenient to refer all of these quantities to the intrinsic<br />

level Ei , as it accounts for both Ec and Ev. Then<br />

n =<br />

p =<br />

N<br />

N<br />

and the Fermi level<br />

E<br />

F<br />

c<br />

v<br />

e<br />

e<br />

−(<br />

Ec−<br />

EF<br />

) / kBT<br />

−(<br />

EF<br />

−Ei<br />

) / k<br />

= nie<br />

−(<br />

EF<br />

−Ev<br />

) / kBT<br />

−(<br />

Ei<br />

−E<br />

= nie<br />

N<br />

− E = −k<br />

T log<br />

i<br />

B<br />

Variation of Fermi level with doping and temperature, including<br />

narrowing of the band gap with temperature:<br />

(from Sze)<br />

Introduction to Radiation Detectors and Electronics Copyright © 1998 by Helmuth Spieler<br />

<strong>VIII.2.</strong>a. A <strong>Semiconductor</strong> <strong>Device</strong> <strong>Primer</strong>, Doping and Diodes<br />

A<br />

i<br />

F<br />

− N<br />

n<br />

B<br />

) / k<br />

D<br />

B<br />

T<br />

T

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