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VIII.2. A Semiconductor Device Primer

VIII.2. A Semiconductor Device Primer

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Since the equilibrium concentrations<br />

the components of the diffusion current due to holes and electrons<br />

are<br />

The total current is the sum of the electron and hole components<br />

where<br />

J<br />

J<br />

n<br />

p<br />

J<br />

n<br />

p0<br />

e<br />

e<br />

2<br />

i<br />

n<br />

=<br />

N<br />

= q D<br />

n<br />

= q D<br />

J<br />

=<br />

0<br />

J<br />

n<br />

p<br />

+ J<br />

= q n<br />

e<br />

A<br />

2<br />

i<br />

n<br />

N L<br />

A<br />

D<br />

2<br />

i<br />

n<br />

n<br />

N L<br />

2<br />

i<br />

p<br />

=<br />

and<br />

p<br />

J<br />

Introduction to Radiation Detectors and Electronics Copyright © 1998 by Helmuth Spieler<br />

<strong>VIII.2.</strong>a. A <strong>Semiconductor</strong> <strong>Device</strong> <strong>Primer</strong>, Doping and Diodes<br />

p<br />

n0<br />

2<br />

i<br />

n<br />

=<br />

N<br />

qeV<br />

/ kBT<br />

( e −1)<br />

qeV<br />

/ kBT<br />

( e −1)<br />

0<br />

⎛<br />

⎜<br />

Dn<br />

⎜<br />

⎝ N AL<br />

( e<br />

n<br />

q V / k T<br />

+<br />

e<br />

N<br />

B<br />

D<br />

D<br />

p<br />

L<br />

−1)<br />

p<br />

⎞<br />

⎟<br />

⎠<br />

D

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