VIII.2. A Semiconductor Device Primer
VIII.2. A Semiconductor Device Primer
VIII.2. A Semiconductor Device Primer
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However, on a logarithmic scale it becomes apparent that both<br />
diodes pass current at all voltages >0.<br />
Forward Current [A]<br />
1.0E-01<br />
1.0E-02<br />
1.0E-03<br />
1.0E-04<br />
1.0E-05<br />
1.0E-06<br />
1.0E-07<br />
1.0E-08<br />
1.0E-09<br />
1.0E-10<br />
1.0E-11<br />
Si vs. Ge Diode - Forward Bias<br />
0 200 400 600 800 1000<br />
Forward Voltage [mV]<br />
The reverse current shows why the Ge diode shows greater<br />
sensitivity at low voltages (smaller band-gap ⇒ increased ni).<br />
Reverse Current [A]<br />
1.0E-05<br />
1.0E-06<br />
1.0E-07<br />
1.0E-08<br />
1.0E-09<br />
Ge<br />
Si<br />
Si vs. Ge Diodes - Reverse Bias<br />
Si<br />
0 2 4 6 8 10<br />
Reverse Voltage [V]<br />
Introduction to Radiation Detectors and Electronics Copyright © 1998 by Helmuth Spieler<br />
<strong>VIII.2.</strong>a. A <strong>Semiconductor</strong> <strong>Device</strong> <strong>Primer</strong>, Doping and Diodes<br />
Ge
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