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The Red Brick Wall of Traditional Semiconductor Electronics The ...

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SiGe:C Heterojunction Bipolar Transistor<br />

f T or f max (GHz)<br />

75<br />

70<br />

65<br />

60<br />

55<br />

50<br />

45<br />

40<br />

35<br />

30<br />

- First realization with MBE 1997 -<br />

10 -3<br />

f max<br />

V CE = 2 V<br />

Emitter Area 0.5 x 5 µm²<br />

R SBi = 2.3 kΩ<br />

f T<br />

Collector Current (A)<br />

10 -2<br />

Ring Oscillator Delay<br />

CML-type, FI/FO = 1<br />

25 HBTs, 0.9 x1.3 µm²<br />

td ± σ =<br />

(12.9 ± 0.2) ps<br />

best value: 12.6 ps<br />

Osten et al. IEDM 97<br />

Meanwhile both frequencies are above 200 GHz<br />

Si-based analog circuits for mobile communication

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