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Master Equation - Based Numerical Simulation in a Single Electron ...

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252<br />

6. Examples of simulated results<br />

<strong>Numerical</strong> <strong>Simulation</strong>s of Physical and Eng<strong>in</strong>eer<strong>in</strong>g Processes<br />

Two examples will be used to demonstrate the numerical solution of <strong>Master</strong> equation <strong>in</strong><br />

s<strong>in</strong>gle electron transistor.<br />

Example 1:<br />

Figures 5(a) dan (b) shows current-dra<strong>in</strong> voltage characteristic of the SET and its dI/dV<br />

curve. The parameter values are C1= 1.0x10-20 F, C2= 2.1x10-19 F, CG= 1.0x10-18 F, R1= 15 MΩ<br />

and R2=250 MΩ. The calculation was carried out for an operat<strong>in</strong>g temperature of 10 K, VG= 0<br />

V and Q0= 0. As shown <strong>in</strong> Fig. 5(a), at small source-dra<strong>in</strong> voltage V there is no current,<br />

<strong>in</strong>dicat<strong>in</strong>g the suppression of the current which is known as the Coulomb blockade. In this<br />

region, any tunnel<strong>in</strong>g event would lead to an <strong>in</strong>crease of the total energy and also the<br />

tunnel<strong>in</strong>g rate is exponentially low. There is also evident that the I-V curve has staircase<br />

shape, which is called as Coulomb staircases.<br />

(a) (b)<br />

Fig. 5. (a) The current – dra<strong>in</strong> voltage characteristics for SET and (b) dI/dV curve with the<br />

device parameters are C1= 1.0x10 -20 F, C2= 2.1x10 -19 F, CG= 1.0x10 -18 F, R1= 15 MΩ, R2=250<br />

MΩ and the external parameters are VG= 0 V and T=10 K.<br />

The Coulomb staircase can be understood simply <strong>in</strong> terms of simulation model <strong>in</strong> equation<br />

(28). Initially at dra<strong>in</strong> voltage V=0, we have ρ(N=0)=1, and Γ1 +(N=0)= Γ2 +(N=0)=0. When<br />

V=Vt (Vt is threshold voltage), the rates Γ1 +(N=0) and Γ2 +(N=0) jump sharply allow<strong>in</strong>g charge<br />

to flow through the junction capacitances, so that ρ(n=1)>0. When V=Vt+e/2C∑ there is<br />

jump <strong>in</strong> Γ1 +(N=1) produc<strong>in</strong>g the next another step <strong>in</strong> I-V characteristics. Such steps happen<br />

due to each <strong>in</strong>crease of V by e/2C∑. <strong>Simulation</strong> result <strong>in</strong> Fig. 5 has values of C2>C1 and<br />

R2>R1. Accord<strong>in</strong>g to Fig. 5(b), the width of the steps is ~131 mV, which is determ<strong>in</strong>ed by<br />

e/2C∑.<br />

Example 2:<br />

The current-gate voltage characteristics of SET is plotted <strong>in</strong> Fig. 6. The parameter values are<br />

C1= 4.2x10-19 F, C2= 1.9x10-18 F, CG= 1.3x10-18 F, R1= 150 MΩ, R2=150 MΩ, T=10 K and V= 10<br />

mV. The program source for this I-V curve can be seen below, which is modified from the<br />

previous source.

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