George Konstantinidis - Microwave & Fiber Optics Laboratory

CURRICULUM VITAE
GEORGE KONSTANTINIDIS
EMPLOYMENT RESIDENCE
Microelectronics Research Group (MRG) 41 M. Merkouri str.
Institute of Electronic Structure & Laser (IESL) Iraklio, 71305, Crete
Foundation for Research & Technology - Hellas (FORTH) Tel: (+30 2810) 313248
VASSILIKA VUTON
P.O. BOX 1527
IRAKLIO 71110
CRETE
GREECE
Tel: (+30 2810) 394103
Mob: 6972 402166
Fax: (+30 2810) 394106
e-mail :aek@physics.uoc.gr
Personal Data
Place - Date of birth : Athens, Greece - 28/08/1960
Nationality : Greek
Marital Status : Married, two children
Higher Education
(Ph.D), Solid State Electronics, University of Salford (UK), 1987
(M.Sc by research), Solid State Electronics, University of Salford (UK), 1985
(M.Sc by course), Solid State Electronics, UMIST (UK), 1983
(B.Sc), Applied Physics, University of Salford (UK), 1982
Main Research Activities
Lithography
UV, DUV, e-beam
Polyimides, SU8
Resists for PBG applications
E-beam nanolithography
III-V Semiconductors
Electrical Contacts
Wet etching
Reactive ion etching techniques
Fabrication of FETs, HEMTs, PHEMTs
Fabrication of MMICs
Fabrication of Optoelectronic devices
Radiation detectors
Wide Band Gap Semiconductors
Electrical Contacts for SiC and III-Nitrides
Reactive Ion Etching of SiC and III-Nitrides
Fabrication of SiC devices (IMPATT, Zener, MESFET)
Fabrication of GaN devices (HEMTs, Sensors, Acoustic
devices such as FBAR,SAW)
MicroElectroMechanical Systems (MEMS)
(Activity initiator)
Biomedical devices
High frequency circuits on thin membranes
RF MEMS Switches
Metamaterials
Left handed structures,
Photonic structures

WORK EXPERIENCE
PERIOD EMPLOYER OCCUPATION
FEB 88 - MAY 88 MRG/IESL/FORTH Postdoctoral Researcher
MAR 89 - NOV 89 National Defense Research
Center
Software Developer
DEC 89 - MAY 90 Eltrans International
Software Developer
Transport SA
MAY 90 -JULY 95 MRG/IESL/FORTH Postdoctoral Researcher
JULY 95 - JULY 98 MRG/IESL/FORTH Development & Technology Scientist (C')
JULY 98 - today MRG/IESL/FORTH Development & Technology Scientist (B')
APRIL 2004-today MRG/IESL/FORTH Director of Applications
ADMINISTRATIVE EXPERIENCE
PERIOD EMPLOYER POSITION
APR 09 - today MRG/IESL/FORTH MRG facility manager
OCT 91 - today MRG/IESL/FORTH Head of Processing Unit
JAN 96 - today MRG/IESL/FORTH Head of the External Services Laboratory of
MRG (EPYM)
JAN 97 - today MRG/IESL/FORTH Facilities Manager
JUN 00 - today MRG/IESL/FORTH ISO 9001 quality system manager
TECHNICAL (CO)-SUPERVISION OF STUDENT THESES
YEAR STUDENT DEGREE/TITLE
2001 Mr. V. Manouselis M.Sc./"Ion gun in situ cleaning of
semiconductor surfaces"
2001 Mr. A. Kostopoulos M.Sc./"Fabrication of GaN HEMTs"
2001 Mr. G. Drakakis M.Sc/"Contact technology to GaN"
2001 Mr. N. Boulamatsis B.Sc/"Electroplating for IC"
2003 Mr. F. Kalaitzakis M.Sc./"QN laser diodes:
2004 Mr. T. Kereces Traineeship "Schottky diodes on GaN"
2004 Mr. A. Pantazis M.Sc/”Micromachined Yagi-Uda antennae”
2004 Mr. Y. Psychias M.Sc/” Design, fabrication and
characterization of RFMEMS switches on
GaAs”
2006 Mr. A. Stavrinidis M.Sc/”Design and fabrication of microwave
receivers for the U-band”
2007 Mr. J. Alifragis Ph.D/”Development of GaN based chemical
sensors”
2008 Mr. A. Pantazis Ph.D/”Lamb wave biosensors” (on going)
PARTICIPATION IN CONCLUDED RESEARCH PROGRAMS
(G.K as MRG responsible person for the processing tasks)
PERIOD PROGRAM MAIN TASK
JAN 89 - DEC 91 ESPRIT 2289 (OLIVES) FET (GaAs/Si) fabrication
JAN 89 - DEC 91 ESPRIT 2035 (GIANTS) PHEMT fabrication
JAN 89 - DEC 91 ESPRIT 3086 (Basic Research) HEMT (InGaAs/InAlAs/InP) fabrication
JAN 90 - DEC 92 ESPRIT 5018 (COSMIC) Novel contacts to GaAs
FET, HEMT fabrication
JAN 90 - DEC 92 ESPRIT 5031 (MORSE) HEMT(GaAs/AlGaAs) fabrication
JAN 91 - JUN 94 ESPRIT 5692 (HVLSI-DPE) MMIC fabrication
DEC 93 - DEC 95 ESPRIT 9500 (SISGAL) MESFET (GaAs/Si) fabrication
FEB 93 - FEB 96 BRITE/EURAM 5416
(TECSICA)
Contact technology to 3C-SiC
RIE of 3C-SiC
1

JAN 95 - SEP 98 EPET II 100 (ENDOS) MEMS fabrication
JAN 95 - DEC 98 EPET II 476
(MICROELECTRONICS)
MMIC fabrication
JUN 97 - DEC 00 MICROELECTRONICS
Infrastructure upgrading
SERVICES LABORATORY
ISO 9001 certification
Quality control management
OCT 98 - OCT 01 INCO COPERNICUS, III-V membrane fabrication for MMIC
"MEMSWAVE"
passive elements, RF MEMS
JUN 98 - OCT 01 WEAG "THALIS" Passive and active MMIC element
fabrication, via holes
FEB 99 - DEC 02 NATO sfp "HP/HF Devices" α-SiC processing technologies
MAY 01 - MAY 02 IST FET ASSESS "QN" Processing of quaternary nitrides
JAN 03 - DEC 04 IST FET ASSESS "QNII" Processing of quaternary nitrides
SEP 02 – SEP 04 NATO sfp "SICPIN" p-i-n and IMPATT diodes fabrication
SEP 02 – DEC 05 IST FET "DALHM" Left handed photonic materials
JAN 04 – DEC 06 NMP STREP "GANANO" AlGaN based HEMTs & sensors
JAN 05 – DEC 08 ICT “ULTRAGAN” AlGAn, InALN, AlN HEMTs
PARTICIPATION IN CURRENT MAIN RESEARCH PROGRAMS
(G.K as MRG responsible person for the processing tasks)
PERIOD PROGRAM MAIN TASK
since MAY 2008 NMP IP “MORGAN” GaN based devices on diamond
since NOV 2007 ESA -GREECE Niride based RDTs
since FEB 2008 ESA-GREECE SiC based PDs
since FEB 2008 ESA-GREECE SIC based JFETs
Since JAN 2009 ENIAC –“SE2A” Real ground speed sensor, gas sensor, SiC
Zener diodes
FUNDED PROPOSALS (G. Konstantinidis as Scientific co-ordinator from MRG)
YEAR PROGRAM DIRECT FUNDING
(Euro)
1994 ΕPΕΤ ΙΙ, "ENDOS" (GSRT) 103,000
1996 FUNDING FOR THE ESTABLISHMENT OF
LABORATORY SERVICES (GSRT)
600,000
1996 GREEK-HUNGARIAN BILATERAL COOPERATION
6,200
(GSRT)
1996 GREEK-ROMANIAN BILATERAL COOPERATION (GSRT) 11,000
1998 INCO COPERNICUS, "MEMSWAVE" (EU) 85,000
2000 "Microelectronics human network" (GSRT) 4,500
2000 GREEK-ROMANIAN BILATERAL COOPERATION (GSRT) 12,000
2001 NATO SfP "SICPIN" (with Dr. K. Zekentes) 75,000
2002 GREEK-ROMANIAN BILATERAL COOPERATION (GSRT) 12000
2003 NoE "AMICOM" 350,000
2003 NoE "TARGET" 230,000
2004 GREEK-HUNGARIAN BILATERAL COOPERATION
12000
(GSRT)
2007 ESA-GREECE CALL FOR IDEAS 30000
2009 GREECE-CYPRUS PROJECT 30000
2009 ENIAC “SE2A” 350000
2009 ENIAC “NEPTUNE” 350000
2

RECENT DISTINCTIONS
1. MRG Leader in the project INCO-COPERNICUS "MEMSWAVE" (co-ordinated by IMT
Bucharest), that was among the 10 finalists for the 2002 Descartes prize.
It has been clearly acknowledged that the key to the success of this project was the
technology developed at MRG related to the fabrication of monolithically integrated
micromachined Schottky diodes.
2. Prize "Tudor Tanasescu" of the Romanian Academy of Sciences for the work in the the
project INCO-COPERNICUS "MEMSWAVE" (2003)
3. Elected to the Board of Directors of the European Microwave Association (EuMA)
representing section 5 (2003 -2006)
4. Elected as Vice President of the Greek Micro and Nano Society (2004) and re-elected in
the same position in 2007.
5. Key-Member of the research team of FORTH (project DALHM) that won one of the
Descartes prizes (2005)
6. Co-author in the article “Near room temperature GaAs polariton LED” just published in
Nature
Refereed Journal Publications
1. Konstantinidis G., R.D. Tomlinson, H. Neumann
"Microhardness of CuInSe2",
Philosophical Magazine Letters, Vol.57, No.2, p. 91, (1988).
2. M. Yakushev, Konstantinidis G., M. Imaneh, R.D. Tomlinson
"The observation of near-surface deviations from stoichiometry in CuInSe2 crystals following
chemical etching",
Solid State Communications, Vol.65, p. 1079, (1988).
3. Georgakilas, A. Dimoulas, Konstantinidis G., K. Tsagaraki, A. Iliadis, A. Christou
"Molecular beam epitaxy of InGaAs on Si",
Crystal Properties and Preparation, Vols. 36-38, p. 407, (1991).
4. Paloura, A. Ginoudi, Konstantinidis G., G. Kiriakidis
"Deep level analysis of undoped Ga xIn1-x P/GaAs single heterojunctions grown by MOMBE and
MOVPE",
Sensors and Actuators A, Vol. 33, p. 63, (1992).
5. Ginoudi, E. Paloura, Konstantinidis G., G. Kyriakidis, Ph. Maurel, J.C. Garcia, A. Christou
"Low temperature dc characteristics of S- and Si- doped Ga 0.51 In 0.49 P/GaAs high electron
mobility transistors grown by metalorganic molecular beam epitaxy",
Appl. Phys. Lett. 60 (25), p. 3162, (1992).
6. J. Kuzmik, K. Michelakis, Konstantinidis G., N. Papanicolaou
"Reactive ion etching of β-SiC in CCl2F2 / O2",
IEE Electronics Letters, Vol. 29, No. 1, p. 18, (1993).
7. Georgakilas, G. Halkias, A. Christou, C. Papavassiliou, G. Perantinos, Konstantinidis, G., P.
Panayotatos
"Microwave performance of GaAs-on-Si MESFETs with Si buffer layer",
IEEE Trans. Electron Devices, Vol. 40, No. 3, p. 507, (1993).
8. Georgakilas, G. Halkias, A. Christou, N. Kornilios, C. Papavassiliou, K. Zekentes,
Konstantinidis G., F. Peiro, A. Cornet, S. Ababou, A. Tabata, G. Guillot
"A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT
technology",
J. Electrochem. Soc., Vol. 140, p. 1503, (1993).
9. K. Zekentes, M. Kayambaki, Konstantinidis G.
"Electron traps in beta-SiC grown by chemical vapour deposition on silicon (100) substrates",
Applied Physics Letters, 66(22)., p. 66, (1995).
10. M. Kayambaki, R. Callec, Konstantinidis G., C. Papavassiliou, N. Papadakis, A. Georgakilas
3

"Investigation of Si-substrate preparation for GaAs on Si MBE growth",
J. Crystal Growth 157, p. 300, (1995).
11. N. Arpatzanis, M. Papastamatiou, G. Papaioannou, Z. Hatzopoulos, Konstantinidis G.
"On the Gamma Ray Radiation Effects in High Electron Mobility Transistors",
Semiconductor Science and Technology, 10, p.1, (1996).
12. T. Lalinsky, J. Osvald, Z. Mozolova, J. Sisolak, Konstantinidis G.
"Ir-Al/GaAs Schottky diodes - The effect of barrier height controlling",
Vac. Sci. Technol. B14, p.658, (1996).
13. A.Georgakilas, C. Papavassiliou, Konstantinidis G., K. Tsagaraki, H. Krasny, E. Lochterman
" Effect of Si(100) tilting angle and prelayer conditions on GaAs/Si heterostructures",
Appl. Surf.Sci. 102, p. 67, (1996).
14. Konstantinidis G., N. Kornilios, K. Zekentes, J. Stoemenos
"High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition",
Material Science&Engineering B46, p. 176, (1997).
15. N. Kornilios, Konstantinidis G., M. Kayambaki, K. Zekentes, J. Stoemenos
"Diffusion of Au in 3C-SiC grown on Si: structure characterisation",
Materials Science& Engineering B46, p.189, (1997).
16. Konstantinidis G., K. Michelakis, J. Kuzmic
"Schottky barrier contacts on reactive ion etched 6H-SiC",
Diamond and Related Materials 6, p. 1459, (1997).
17. T. Feng, A. Dimoulas, A. Christou, Κonstantinidis G., Z. Hatzopoulos
“Failure mechanisms of GaAs MESFETs with Cu/Refractory metallized gates" Microelectron.
Reliab. Vol. 37, No. 10/11, p.1699-1702, (1997)
18. N. Arpatzanis, R. Vlastou, Konstantinidis G., M. Papastamatiou, E. Gazis, G. Papaioannou
"Ion irradiation induced defects in epitaxial GaAs layers"
Solid State Electronics 42/2, p. 277, (1998).
19. Konstantinidis G., K. Michelakis, J. Kuzmic
"Schottky contacts on CF4/H2 reactive ion etched β-SiC"
Solid State Electronics 42/2, p. 253, (1998).
20. N. Chaniotakis, E. Moschou, Konstantinidis G.
"Highly selective-ion-carrier chemically modified FETs",
Microelectronic Engineering 41/41, p. 481, (1998).
21. Konstantinidis G., B. Pecz, K. Tsagaraki, M. Kayambaki, K. Michelakis
"Improvements in Pt-based Schottky contacts to 3C-SiC",
Materials Science&Engineering B61-62, p. 406, (1999)
22. K. Vassilevski, Konstantinidis G., N. Martin, K. Zekentes
"Investigation of annealing conditions to the formation of ohmic contacts to p-type SiC",
Materials Science&Engineering B61-62, p. 296, (1999)
23. Georgakilas, M. Androulidaki, K. Tsagaraki, K. Animer, Konstantinidis G., N. Pelekanos, M.
Calamiotou, Zs. Czigany, B. Pecz
" Influence of MBE growth temperature on the properties of cubic GaN grown on GaAs substrates"
Phys. Stat. Sol. (a) 176, p. 525, (1999)
24. K. Vassilevski, K. Zekentes, Konstantinidis G., A. Strel'chuk
"Fabrication and electrical characterization of 4h-SiC p+-n-n+ diodes with low differential
resistance"
Solid State Electronics 44, p. 1173, (2000)
25. Muller, S. Iordanescu, I. Petrini, V. Avramescu, G. Simion, D. Vasilache, Konstantinidis G., R.
Marcelli, G. Bartolucci
"Polyimide based GaAs micromachined Millimeter wave structures"
Journal of Micromechanics & Microengineering 10, p. 130 (2000)
26. Petrini, A. Muller, V. Avramescu, G. Simion, D. Vasilache, Konstantinidis G.
"Resistive pressure sensing structures on polyimide membranes on GaAs substrate"
Journal of Micromechanics & Microengineering 10, p.218 (2000)
27. N. Arpatzanis, G.J. Papaioannou, Konstantinidis G., C. Michelakis
"On the He-ion irradiation induced traps in GaAs and their annealing kinetics"
Phys. Stat. Sol (a) 180, p. 569, (2000)
28. M. Lagadas, S. Mikroulis, M. Androulidaki, M. Kayambaki, Konstantinidis G., K. Michelakis, Z.
Hatzopoulos, E. Paloura, J. Kalomiros
4

"Hydrogenetion of PHEMT structures"
Romanian Journal of Information Science and technology, V.3, N.1, p.57, (2000)
29. A.Georgakilas, K. Tsagaraki, E. Makarona, Konstantinidis G., M. Androulidaki, M. Kayambaki, E.
Aperathitis and N.T. Pelekanos
"Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters",
Materials Science in Semiconductor Processing 3, p. 511, (2000).
30. K. Vassilevski, K. Zekentes, Konstantinidis G., N. Papanicolaou, I.P. Nikitina, A. I. Babanin
"Structural and morphological characteristics of Al/Ti based ohmic contacts on p-type 4H-SiC annealed
under various conditions"
Materials Science Forum 338-3, p. 1017, (2000)
31. M. Papastamatiou, N. Arpatzanis, G.J. Papaioannou, Konstantinidis G., C. Michelakis, Z.
Hatzopoulos
“On the alpha particle irradiation effects of MESFETs”
Physica Status Solidi A- Applied Research 180 (2), pp. 569-584, (2000)
32. K. Vassilevski, K. Zekentes, K. Tsagaraki, Konstantinidis G., and P. Nikitina,
"Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts to 4H-SiC"
Materials Science&Engineering B80, p.370, (2001)
33. B. Szentpali, V.V. Tuyen, Konstantinidis G., M. Lagadads
"GaAs planar doped diodes"
Materials Science&Engineering B80, p.257, (2001)
34. K. Animer, A. Georgakilas, M. Androulidaki, K. Tsagaraki, M. Pavelescou, Konstantinidis
G., J. Abriol, A. Cornet, M. Calamiotou, J. Kuzmik, V. Yu Davidov
"Study of the correlation between GaN material properties and the growth conditions of RF
plasma-assisted MBE"
Materials Science&Engineering B80, p.304, (2001)
35. A. Muller, Konstantinidis G., M. Lagadas, G. Deligeorgis, S. Iordanescu, I. Petrini, D. Vasilache,
P. Blondy, D. Dascalu
"Micromachined filters for 38 GHz and 77 GHz supported on thin GaAs/AlGaAs membranes"
Journal of Micromechanics & Microengineering 11, p.305, (2001)
36. M. Zervos, A. Kostopoulos , Konstantinidis G., M. Kayambaki and A. Georgakilas
"An investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double
heterostructures by self consistent Poisson-Schrödinger calculations and capacitance-voltage
profiling"
Journal of Applied Physics,Vol.91(7), p.4387, (2002)
37. M. Zervos, A. Kostopoulos , Konstantinidis G., M. Kayambaki, S. Mikroulis, N. Flytzanis and A.
Georgakilas
"The pinch-off behaviour and charge distribution in AlGaN-GaN-AlGaN Double heterostructure Field
Effect Transistors"
Phys. Stat. Sol. (a) 188, No. 1, p. 259, (2001)
38. T. Loukakos, C. Kalpouzos, Z. Hatzopoulos, M. Sfendourakis, Konstantinidis G., and C.
Fotakis
"The role of As precipitates on ultrafast electron trapping in low-temperature-grown GaAs and
AlGaAs alloys",
Journal of Applied Physics, Vol. 91 (12), p. 9863, (2002)
39. Konstantinidis G., A. Muller, D. Necoloiu, G. Deligeorgis, M. Lagadas
"GaAs membrane supported millimeter wave receiver structures"
Journal of Micromechanics & Microengineering 13, p.353, (2003)
40. F. Kalaïtzakis, M. Androulidaki, N. T. Pelekanos, E. Dimakis, E. Bellet-Amalric, D. Jalabert,
D. Cengher, K. Tsagaraki, E. Aperathitis, Konstantinidis G, and A. Georgakilas
"Field-compensated quaternary InAlGaN/GaN quantum wells"
Phys. Stat. Sol (b),240 (2). p.301, (2003)
41. N. Camara, Constantinidis G. and K. Zekentes
"Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion
Etching of 6H - and 4H-SiC"
Mat. Sci. For. 433-436, pp. 693-696, (2003)
42. E.Dimakis, G. Konstantinidis, K. Tsagaraki, A. Adikimenakis, E. Iliopoulos,A. Georgakilas
“The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted
molecular beam epitaxy”
5

Superlattices and Microstructures 36 (2004), 497-507
43. J. Kuzmik, G. Konstantinidis, S. Harasek, S. Hascik, E. Bertagnolli, A. Georgakilas, D.
Pogany
“ZrO2/(Al)GaN metal-oxide-semiconductor structures: characterization and application, Semicond.
Sci. Technol. 19 (2004), 1364-1368
44. N. Chaniotakis, Y. Alifragis, G. Konstantinidis, A. Georgakilas
”Gallium nitride based potentiometric anion sensor”,
Anal. Chem. 76, 5552-5556, (2004)
45. N. Chaniotakis, Y. Alifragis, G. Konstantinidis, A. Georgakilas
“Anion selective potentiometric sensor based on gallium (iii) nitride crystalline membrane”,
Electroanalysis, 17 no.5-6, 527-531, (2005)
46. N. Katsarakis, G. Konstantinidis, A. Kostopoulos, S. Penciu, T. Gundogdu, T. Koschny, M.
Kafesaki, E.N. Economou, C.M. Soukoulis
“Magnetic response of split-ring resonators in the far infrared frequency regime”,
Optics Letters, 30, no.11, 1348-1350, (2005)
47. A. Pantazis, D. Neculoiu, Z. Hatzopoulos, D. Vaschilache, M. Lagadas, M. Dragoman, C.
Buiculescu, I. Petrini, G. Konstantinidis, A. Muller
“Millimeter-wave passive circuit elements based on GaAs micromachining”, J. Micromech.
Microeng., 15, 1-7, (2005)
48. E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis, A. Georgakilas
“Active nitrogen species dependence on radiofrequency plasma source operating parameters and
their role in GaN growth”
Journal of Crystal growth 278, 426-430, (2005)
49. Y.Alifragis, A. Georgakilas, G. Konstantinidis, E. Iliopoulos, A.Kostopoulos, N.A.
Chaniotakis
“Response to anions of AlGaN/GaN high-electron mobility transistors”
Applied Physics Letters 87, 253507-1 253507-3, (2005)
50. N.A. Chaniotakis, Y.Alifragis, A. Georgakilas, G. Konstantinidis
“GaN based anion selective sensor: Probing the origin of the induced electrochemical potential”
Applied Physics Letters 86 (16), 164103, (2005)
51. J. Osvald, J. Kuzmik, G. Konstantinidis, P. Lobotka, A. Georgakilas
“Temperature dependence of GaN Schottky diodes I-V characteristics”
Microelectronic Engineering 81, 181-187, (2005)
52. V.G. Theonas, M. Exarchos, G. Konstantinidis, G.J. Papaioannou
“RF MEMS sensitivity to electromagnetic radiation”
Journal of Physics: Conference series 10, 313-316, (2005)
53. K. Minoglou, ED Kyriakis-Bitzaros, E. Grivas, S. Katsafouros, A. Kostopoulos, G.
Konstantinidis, G. Halkias
“Metallic bonding of optoelectronic dies to silicon wafers”
Journal of Physics: Conference series 10, 393-396, (2005)
54. F.G. Kalaitzakis, G. Konstantinidis, K. Tsagaraki, M. Androulidaki, N.T. Pelekanos
“Optical cavity formation on GaN using conventional RIE system”
Phys. Stat. Sol. C, Current topics in solid state physics, pp.1798-1802, (2006)
55. J. Kuzmik, A. Kostopoulos, G. Konstantinidis, J-F Carlin, A. Georgakilas, D. Pogany
“InAlN/GaN HEMTs: A first insight into technological optimization”
IEEE TED, Vol.53, 3, 422-426 (2006)
56. K. Zekentes, I. Zergioti, A. Klini, G. Konstantinidis
“Via hole formation in Silicon Carbide by laser micromachining”
Materials Science Forum Vols. 527-529 pp. 1119-1121, (2006)
57. G.J. Papaioannou, M. Exarchos, V. Theonas, G. Konstantinidis, S. Psychias, D. Vasilache, A.
Muller, D. Neculoiu
“Effect of space-charge polarization in RF-MEMS capacitive switches dielectric charging”
Applied Physics Letters 89, 084103, (2006)
58. T. F. Gundogdu, I. Tsiapa, A. Kostopoulos, G. Konstantinidis, and N. Katsarakis, R. S.
Penciu, M. Kafesaki, E. N. Economou, Th. Koschny and C. M. Soukoulis
“Experimental demonstration of negative magnetic permeability, in the far-infrared frequency
regime”
Applied Physics Letters 89, 084103, (2006)
6

59. A. Müller, D. Neculoiu, D. Vasilache, D. Dascalu, G. Konstantinidis, A. Kostopoulos, A.
Adikimenakis, A. Georgakilas, K. Mutamba, C. Sydlo, H. L. Hartnagel, A. Dadgar
“GaN micromachined FBAR structures for microwave applications”
Superlattices and Microstructures 40 (4-6), pp.426-431, (2006)
60. D. Neculoiu, A. Muller, G. Konstantinidis
“Electromagnetic modeling of GaAs membrane supported mm-wave receivers”
Journal of Physics: Conference Series 34, pp.28-33, (2006)
61. V. Theonas, G.J. Papaioannou, G. Konstantinidis
“RF MEMS dielectric sensitivity to electromagnetic radiation”
Sensors and Actuators A-Physical 132 (1), pp.25-33, (2006)
62. M. Dragoman, A. Muller, D. Neculoiu, G. Konstantinidis, K. Grenier, D. Dubuc, L. Bary, R.
Plana
“High performance thin film bulk acoustic resonator covered with carbon nanotubes”
Applied Physics Letters 89 (14), 142122, (2006)
63. Y. Alifragis, A. Volosirakis, N. A. Chaniotakis, G. Konstantinidis, A. Adikimenakis, A.
Georgakilas,
“Potassium selective chemically modified field effect transistors based on AlGaN/GaN twodimensional
electron gas heterostructures”,
BIOSENSORS AND BIOELECTRONICS 22 (2007), 2796–2801
64. E. Dimakis, E. Iliopoulos, M. Kayiambaki, K. Tsagaraki, A. Kostopoulos, G. Konstantinidis,
and A. Georgakilas
“Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure”
Journal of ELECTRONIC MATERIALS, Vol. 36, No. 4, (2007), 373-377
65. F. G. Kalaitzakis, N. T. Pelekanos, P. Prystawko, M. Leszczynski, G. Konstantinidis
“Low resistance as-deposited Cr/Au contacts on p-type GaN”
APPLIED PHYSICS LETTERS 91, 261103 , (2007)
66. Y. Alifragis, A. Volosirakisa, N.A. Chaniotakis, G. Konstantinidis, E.iliopoulos, A.
Georgakilas”
“AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions”
PHYS. STAT.SOL (a) 204, No.6, 2059 (2007)
67. J. Kuzmik, J.-F. Carlin, M. Gonschorek, A. Kostopoulos, G. Konstantinidis, G. Pozzovivo, S.
Golka, A. Georgakilas, N. Grandjean, G. Strasser and D. Pogany
“Gate-lag and drai-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs”
PHYS. STAT.SOL (a) 204, No.6, 2019 (2007)
68. S. Tsintzos, P.G. Savvidis, G. Konstantinidis, Z. Hatzopoulos, N.T.Pelekanos
“Towards electrically-pumped microcavity polariton lasers”
PHYS. STAT.SOL (c) 5, No.12, 3594, (2008)
69. A. Müller, G. Konstantinidis, M. Dragoman,,D. Neculoiu, A. Kostopoulos, M.
Androulidaki, M. Kayambaki, and D. Vasilache
“GaN membrane metal–semiconductor–metal ultraviolet photodetector”
APPLIED OPTICS, VOL.47, No.10, 1453 (2008)
70. S.I. Tsintzos, N.T. Pelekanos, G. Konstantinidis, Z. Hatzopoulos, P.G. Savvidis
“Near room temperature GaAs polariton LED”
NATURE, V.453, 372, (2008)
71. V. Theonas, G. Konstantinidis, G. Papaioannou
“Estimation of metallic contact effects on the performance of (SI) GaAs soft X-ray radiation
detectors”
PHYS. STAT.SOL (c) 5, No.12, 3638 (2008)
72. G. Dialynas, S. Tsintzos, E. Trichas, P. Savvidis, G. Konstantinidis, J. Renard, B. Gayral, Z.
Hatzopoulos, N Pelekanos
“Anti-binding of biexcitons in (211) B InAs/GaAs piezoelectric quantum dots”
Physica E, 2113, (2008)
73. P. Robogiannakis, K. Minoglou, S. Katsafouros, G. Halkias, E.D. Kyriakis-Bitzaros, A.
Kostopoulos, G. Konstantinidis
“Metallic bonding methodology for heterogeneous integration of optoelectronic dies to CMOS
circuits”
Microelectronic engineering, Vol. 85, n.4, 727, (2008)
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74. T. F. Gundogdu, N. Katsarakis, M. Kafesaki, R. S. Penciu, G. Konstantinidis, A.
Kostopoulos, E. N. Economou, and C. M. Soukoulis,
“Negative index short-slab pair and continuous wires metamaterials in the far infrared regime”
Opt. Expr. 16, pp. 9173, (2008).
75. H.Koliakoudakis, G.Konstantinids, K. Zekentes
“Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques”
Phys. Stat.Sol (c) 5, No.12, 2536, (2008)
76. P. Pursula, T. Vaha_Heikkila, A. Muller, D. Neculoiu, G. Konstantinidis, A. Oja, J. Tuovine
”Millimeter wave identification-new radio system for low power, high data rate and short range”
IEEE transactions on microwave theory and techniques,Vol.56, n.10, 2221, (2008)
77. M. Dragoman, G. Konstantinids, A. Kostopoulos, D. Dragoman, D. Neculoiu, R. Buiculescu, R. Plana, H.
Hartnagel
“Multiple negative resistances in trenched structures bridged with carbon nanotubes”
Applied Physics Letters 93, 043117, (2008)
78. P. Georgakakos, G. Papaioannou, G. Konstantinidis, Z. Hatzopoulos
“Study of the influence of α-particles irradiation on AlGaAs/GaAs heterojunction structures”
Phys. Stat.Sol (c) 5, No.12, 3740, (2008)
79. G.E Dialynas, A. Pantazis, Z. Hatzopoulos, M. Androulidaki, K. Tsagaraki, G. Konstantinidis, C.
Xenogianni, E. Trichas, S. Tsintzos, P.G. Savvidis, N.T Pelekanos
“InAs nanostructures on polar GaAs surfaces”
International Journal on Nanotechnology, Vol.6, 124, (2009)
80. A. Muller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayiambaki, A.
Stavrinidis, D. Vaschilache, C. Buiculescu, I. Petrini, A. Kostopoulos, D. Dascalu
“GaN membrane supported UV photodetectors fabricated using nanolithographic processes”
Microelectronics Journal 40, 319, (2009)
81. A. Muller, D. Neculoiu, D. Vaschlache, A. Cismaru, M. Danila, M. Dragoman, G. Konstantinidis, A.
Stavrinidis, G. Deligeorgis, K. Tsagaraki
“6.3 GHz film bulk acoustic resonator structures based on a gallium nitride/silicon thin membrane”
IEEE Electron Device Letters 30, Vol.8, 799, (2009)
82. A. Adikimenakis, K.E. Aretouli, E. Iliopoulos, A. Kostopoulos, K. Tsagaraki, G. Konstantinidis, A.
Georgakilas
“High electron mobility transistors based on the AlN/GaN heterojunction”
Microelectronics Engineering, 86, 1071 (2009)
83. N. Arpatzanis, G. Konstantinidis
“Rapid thermal annealing temperature dependence of noise properties in Au n-GaAs Schottky diodes with
embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells”
Phys. Stat. Sol. B 246, No,4, 880, (2009)
84. T. Prodromakis, C. Papavassiliou, G. Konstantinidis, C. Toumazou
“Application of gold nanodots for Maxwell-Wagner Loss Reduction”
Micro & Nano Letters, June 2009 -- Volume 4, Issue 2, p. 80-83
85. G. Deligeorgis, M. Dragoman, D. Neculoiu, G. Konstantinidis, A. Cismaru, R. Plana
“Microwave propagation in Graphene”
Appl. Phys. Lett.,95, 073107, (2009)
86. M. Dragoman, D.Dragoman, G. Deligeorgis, , G. Konstantinidis, D. Neculoiu, A. Cismaru, R. Plana
“Current oscillations in a wide grapheme sheet”
J. Appl. Phys., 106, 044312, (2009)
87. D. Neculoiu, A. Muller, G. D. Deligeorgis, A. Dinescu, A. Stavrinidis, D. Vaschilache, A. Cismaru, G.E. Stan,
G. Konstantinidis
“AlN on silicon based surface acoustic wave resonators operating at 5 GHz”
Electronic Letters 45, 1196 (2009)
88. M. Dragoman, G. Konstantinidis, A. Cismaru, D. Vasilache, A. Dinescu, D. Dragoman, D. Neculoiu, R.
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“Negative differential resistance in GaN nanowire network”
Appl. Phys. Lett. 96, 053116 (2010)
89. G. Deligeorgis M. Dragoman, D. Neculoiu, D. Dragoman, G. Konstantinidis, A. Cismaru, R. Plana
“Microwave switching of grapheme field effect transistor at and far from the Dirac point”
Appl. Phys. Lett. 96, 103105 (2010)
90. A.K. Pantazis, E. Gizeli, G. Konstantinidis,
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“A high frequency GaN Lamb-wave sensor device
Appl. Phys. Lett. 96, 053116 (2010)
91. T. Prodromakis, G. Konstantinidis, C. Papavassiliou, C. Toumazou
“Interfacial polarization on gallium arsenide membranes”
Micro & Nano letters, 5,3, p. 178-180 (2010)
92. M. Dragoman, D. Neculoiu, G. Deligeorgis, G. Konstantinidis, D. Dragoman A. Cismaru,
A.A. Muller, R. Plana
“Millimeter wave generation via frequency multiplication in graphene”
Appl. Phys. Lett. 97, 093101 (2010)
93. A. Muller, D. Neculoiu, G. Konstantinidis, G. Deligeorgis, A. Dinescu, A. Stavrinidis, A. Cismaru, M.
Dragoman, A. Stefanescu
“SAW devices manufactured on GaN/Si for frequencies beyond 5GHz”
IEEE Electron Device Letters , Vol., (2010)
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