Charalambos Lontos

Prof. C. A. LONDOS
DEPARTMENT OF PHYSICS
SOLID STATE PHYSICS SECTION
PANEPISTIMIOPOLIS ZOGRAFOS
ATHENS 157 84, GREECE
Tel: 003 210 7276726
Fax: 003 210 7276711-003 210 7276726
Electronic address: hlontos@phys.uoa.gr
Name: Charalambos Londos
Date of birth: December 1st, 1947
Place of birth: Athens, Greece
Marital status: Married with one child
UNIVERSITY OF ATHENS
CURRICULUM VITAE
Studies: Bsc, University of Athens (1970)
MSc, in Meteorology, University of Athens (1976)
MSc, in Radio-electrology, University of Athens (1981)
PhD, University of Athens (1979),
Entitled: “X-Ray Raman Scattering in Graphite”.
Employment: I am working in Athens University since 1974.
Present position: Associate professor in the Solid State Physics Section of the
Physics Department of the Athens University.
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Athens October 2010
Director of the Solid State Section (5/2/1997-31/8/2000) and (1/9/2003-2009)
Research activities:
a) Studies of point defects in semiconductors using the methods Deep-Level Transient
Spectroscopy (DLTS) and Infrared Absorption Spectroscopy (IR),
b) Studies of lattice defects in ionic crystals using the methods of Ionic Thermocurrents
(ITC) and the Dielectric Losses (DL),
c) Studies of high-Temperature Superconductors,
d) Studies of problems in classical physics especially in the fields of Electromagnetism and
Waves.
e) Studies of Implantation induced damage in Semiconductors
f) Studies of the characteristics of Liquid-metal ion sources

International Collaborations:
I have worked in England for fifteen months (University of Reading, Dr.P.C.Banbury), and for
seven months (Imperial College, Prof.R.C. Newman), in Hungury for three months (National
Academy of Science, Dr.G. Ferenczi) and for one month in Germany (Research Institute for
Semiconductor Physics, Dr.K.Schmalz).
In the last years I have common projects and collaborations with the:
i) Ioffe Physicotechnical Institute of the Russian Academy of Sciences, St. Petersburg ,Russia
(Prof. V. V. Emtsev),
ii) the Institute of Electron Technology of the Polish Academy of Sciences, Warsaw,Poland
(Prof. A. Misiuk),and
iii) the Kumamoto National College of Technology Kumamoto, Japan
(Prof.H.Ohyama)
International Projects
1) TEMPUS JEP-083331-94
2) TEMPUS JEP-1143-96
3) NATO Collaborative research grant SA (HTECH CRG 974588 ) (chief coordinator)
4) NATO-INTAS (2001-00468)
5) SIXTH FRAMEWORK PROGRAM, project CADRES (contract no: 506962)
6) RUSERA EXE PROJECT (2008)
Teaching in foreign Institutions
Vth EUROPEAN FRAMEWORK PROGRAM ‘Physics and fabrication of low-
dimensional structures for technologies of future generations (CELDIS)’
I stayed in Warsaw, Poland for a month (September-October 2002) and gave 4 lectures of one
hour duration each ,with the general title ‘ Infrared Spectroscopy Studies of Defects is Silicon’ in
the framework of the program CELDIS.
The particularly titles of the lectures were the following:
i) Point defects in Si
ii) Infrared studies of point defects in silicon
iii) Multivacancy-multioxygen (VmOn) defects in silicon
iv) The effect of high temperature-high pressure on the evolution of the VO
defect in Si
Teaching and Laboratory Experience:
A) Graduate Level
a) Teaching of Electromagnetism
b) Teaching of Wave Physics
c) Teaching of Spectroscopic methods in Solid States Physics
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d) Tuition in General Physics
e) Supervision of Laboratory exercises in
i) General Physics, ii) Wave Physics iii) Solid State Physics, iv)Construction of
Laboratory exercises, v) Co-responsible for the organization and functioning of the
Laboratory of the Physics of Waves.
f) Supervision of Graduate Theses (about 50 Theses).
B) Postgraduate Level
a) Electromagnetism
b) Spectroscopic Methods in Solid State Physics
c) Advanced Laboratory in Solid State Physics
d) Supervision of MSc Theses (about 15)
e) Supervision of PhD Theses (6 see below)
1) E. Valamontes (1992)
“Microanalysis of thin films in solid background. Quantitization of the method and
resolution ability”
2) E.Fytros (2000)
“Study of point defects in crystalline Si by means of IR Spectroscopy”
3) G.Antonaras (2006)
“Study of point defects in irradiated silicon subjected to high hydrostatic pressure”
4) M.Potsidi (2007)
“Study of the effect of high hydrostatic pressure on the properties of defects in silicon”
5) A. Andrianakis (2009)
“Study of point defects in electron irradiated Ge-doped Si”
6) E. Sgourou (In progress)
“Study of point defects in Si and Si1-xGex “
Author’s activities:
I have written the following books (in Greek):
1) “Static Electricity” by C.A.Londos
2) “Laboratory Exercises in Wave Physics” by A.Dova,K.Eftaxias,
C.A.Londos and B.Hadjicontis
3) “Electromagnetic waves” by C.A.Londos
4) «Spectroscopic Methods in Solid State Physics» by C.A.Londos
5) «Notes for the Advanced Laboratory in Solid State Physics»
Citations: I have over 500 references in my research work which is quoted below.
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Α. Publications in International Journals
1) C.N.Koumelis,G.E.Zardas,C.A.Londos and D.K.Leventouri
"Internal strain of GaAs.II Transverse case".
Acta Crystall.A32,306 (1976).
2) C.A.Londos and C.N.Koumelis
"An anomaly of the X-Ray spectrum of graphite in the region of the Raman band".
Sol.Stat Commun.31,735 (1979).
3) C.N.Koumelis and C.A.Londos
"X-Ray Raman scattering in colloidal and polycrystalline graphite".
Can.J.Phys.58,1507 (1980).
4) C.N.Koumelis,C.A.Londos, Z.I.Kavogli, D.K.Leventouri, A.B.Vassilikou and
G.E.Zardas
"On a mosaic graphite spectometer without collimators".
Can.J.Phys.60,1241 (1982)
5) A.N.Andriotis and C.A.Londos
"Angular dependence of the X-Ray Raman Scattering from polycrystals".
Sol.Stat.Commun.49,213 (1983).
6) C.A.Londos
"Room temperature irradiation of p-type silicon".
phys.stat.sol.(a) 92,609 (1985).
7) A.B.Vassilikou,J.G.Grammatikakis and C.A.Londos
"Thermally stimulated depolarization currents in LiF+Be2+"
J.Phys.Chem.Sol.47,727 (1986).
8) C.A.Londos
"Electron irradiation-induced defects in p-type Silicon"
J.Phys.Chem.Sol.47,1147 (1986).
9) C.A.Londos
"Charge-dependent defect traces in the DLTS and MCTS spectra of Silicon"
phys.stat.sol.(a)96,637 (1986).
10) C.A.Londos
"Capacitance transient studies of a metastable defect in Silicon"
Phys.Rev.B34,1310 (1986).
11) C.A.Londos and P.C.Banbury
"Defect studies in electron irradiated boron-doped Silicon"
J.Phys.C20,645 (1987).
12) C.A.Londos
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"An anomalous feature on the DLTS spectrum of Silicon"
Sol.Stat.Commun.62,719 (1987).
13) C.A.Londos
Deep-Level transient spectroscopy studies of the interstitial carbon defect in Silicon"
Phys.Rev.B35,6295 (1987).
14) C.A.Londos
"The divacancy production in low-temperature irradiated Silicon"
Phys.Rev.B35,7511 (1987).
15) C.A.Londos
"Annealing studies of defects pertinent to radiation damage in Si:B"
phys.stat.sol.(a)102,639 (1987).
16) C.A.Londos
"The effect of Oxygen on the migration of the Carbon interstitial defect in Silicon"
Phys.Rev.B37,4175 (1988).
17) G.Ferenczi,C.A.Londos,T.Pavelka,M.Somogyi and A.Martens
"Correlation of the concentration of the carbon associated damage levels with the total
carbon concentration in Silicon"
J.Appl.Phys.63,183 (1988).
18) V.Hadjicontis,C.A.Londos and K.Eftaxias
"Correlation of the diffusivities of various elements in Silicon"
phys.stat.sol.(a)105,K87 (1988).
19) C.A.Londos
"Some aspects on defects reactions related to the carbon impurity in Silicon"
Jap.J.Appl.Phys.27,2089 (1988).
20) C.A.Londos and J.Grammatikakis
"Notes on the carbon-associated deep level complex in irradiated Si"
phys.stat.sol.(a)109,421 (1988).
21) J.Grammatikakis and C.A.Londos
"Compressibilities of Niobium alloys"
J.Phys.Chem.Sol.49,1465 (1988).
22) C.A.Londos
"Defect states in electron-bombarded n-type Silicon"
phys.stat.sol.(a)113,503 (1989).
23) J.Grammatikakis,C.A.Londos,V.Katsika and N.Bogris
"Migration enthalpy of the cation vacancies in LiF+Be2+"
J.Phys.Chem.Sol.50,845 (1989).
24) K.Eftaxias,C.A.Londos and Ph.Valianatos
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"An alternative treatment of the problem of the image formation of an object through
plain interfaces"
Am.J.Phys.58,771 (1990).
25) C.A.Londos,K.Eftaxias and V.Hadjicontis
"Correlation of Solubities of various elements in Silicon"
phys.stat.sol.(a)118,K13 (1990).
26) C.A.Londos
"Carbon-related radiation damage centers and processes in p-type Silicon"
Semicond.Sci.Technol.5,645 (1990).
27) C.A.Londos
"Charge-state-controlled behaviour of the interstitial carbon defects in
Czochralski-grown Silicon"
J.Phys.Chem.Sol.51,1301 (1990).
28) C.A.Londos and T.Pavelka
"DLTS investigation of deep levels in bulk GaAs under uniaxial stress"
Semicond.Sci.Techn.5,1100 (1990).
29) N.Guskos, C.A.Londos, Ch.Trikalinos, S.M.Paraskevas, A.Koufoudakis,
C.Mitros, H.Gamari-Seale and D.Niarchos
"EPR measurements on the Cu2+ ions in the high-Tc superconductors MBa2Cu3O7-δ
phys.stat.sol (b) 165,249 (1991)
30) N.Guskos, W.Likodimos, C.A.Londos, Ch.Trikalinos, A.Koufoudakis, C.Mitros,
H.Gamari-Seale, D.Niarchos and S.M.Paraskevas
"Investigation of the Samarium role in the physical properties of
Sm0.5Re0.5Ba2Cu3O7-δ compounds in the orthorombic and tetragonal structures"
Mod.Phys.Let.B 5,969 (1991)
31) N.Guskos, M.Calamiotou, C.A.Londos, V.Likodimos, A.Koufoudakis, C.Mitros,
H.Gamari-Seale and D.Niarchos
"Temperature dependence of the EPR spectra of EuBa2Cu3O7-δ compounds in
orthorombic and tetragonal phases"
J. Phys. Chem. Sol. 53,211 (1992)
32) C.A.Londos, N.Guskos, J.Grammatikakis, N.Bogris, A.Kyritsis, and
A.Papathanassiou
"ITC studies of relaxation phenomena in CaF2:Gd3+ crystals"
J.Phys.Chem.Sol. 53,249 (1992)
33) N.Guskos, C.A.Londos, V.Likodimos, M.Calamiotou, A.Koufoudakis, C.Mitros,
H.Gamari-Seale and D.Niarchos
"EPR studies of the oxygenated and non-oxygenated LaBa2Cu3O7-δ compounds"
J.Phys.Condensed Matter 4,4261 (1992)
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34) N.Guskos, V.Likodimos, C.A.Londos, W. Windsch, H.Metz, A.Koufoudakis,
C.Mitros, H.Gamari-Seale, D.Niarchos
"Low T-dependence of the EPR spectra of Gd0.5Ba2Cu3O7-δ compounds in
tetragonal phase"
phys.stat.sol.(b) 170,597 (1992)
35) C.A.Londos
"The production and the evolution of A-centers and Divacancies in Silicon"
phys.stat.sol.(a) 132,43 (1992)
36) C.A.Londos, A.Vassilikou-Dova, G.Georgiou and L.Fytros
"Infrared studies of natural topaz"
phys.stat.sol.(a) 133,473 (1992)
37) C.A.Londos
"Investigation of a new metastable defect in boron-doped Cz-Si."
phys.stat.sol.(a) 133,429 (1992)
38) N.Guskos, V.Likodimos, C.A.Londos, Ch.Trikalinos, S.M.Paraskevas,
A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos
"An EPR study of Ceramics Pr0.5Re0.5Ba2Cu3O7-δ in orthorombic and tetragonal phase"
Journal of Superconductivity 5,457 (1992)
39) N.Guskos, V.Likodimos, C.A.Londos, H.Gamari-Seale, A.Koufoudakis and
D.Niarchos
"Experimental studies of the EuB2-xEuxCu3O7-δ compound in the tetragonal phase"
J.Phys.Condens.Matter 5,229 (1993)
40) C.A.Londos, M.J.Binns, A.R.Brown, S.A.McQuaid and R.C.Newman
"Effect of oxygen concentration on the kinetics of thermal donor formation in Silicon at
temperatures between 3500C and 5000C"
Appl.Phys.Let.62,1525 (1993)
41) C.A.Londos
"Note on the identity of the Ev+0.34eV level in float-zone Si"
J.Appl.Phys.75,645 (1994)
42) C.A.Londos, G.I.Georgiou, L.G.Fytros and K.Papastergiou
"Interpretation of infrared data in neutron-irradiated silicon"
Phys.Rev.B 50, 11531 (1994)
43) S.A.McQuaid, M.J.Binns, C.A.Londos, J.H.Tucker, A.R.Brown and R.C.Newman
"The kinitics of oxygen dimer formation in Czochralski Silicon and the effects of preheating in
hydrogen gas"
J.Appl.Phys 77,1427 (1994)
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44) N.Guskos, V.Likodimos, C.A.Londos, V.Psycharis, C.Mitros, A.Koufoudakis,
H.Gamari-Seale, W.Windsch and H.Metz
“Structural, Magnetic and EPR Studies of BaCuO2+x”
J.Sol.Stat.Chem. 119,50 (1995)
45) N.Sarlis, G.Kalkanis, C.A.Londos, S.S.Sklavounos and P.Tsakonas
"A calculation of the surface charges and the electric field outside steady
current-carrying conductors"
Eur.J.Phys. 17, 37 (1996)
46) C.A.Londos, N.V.Sarlis, L.G.Fytros and K.Papastergiou
“Precursor Defect to the Vacancy - dioxygen center in Si”
Phys.Rev. B 53,6900 (1996)
47)M.J.Binns, C.A.Londos, S.A.McQuaid, R.C.Newman, N.G.Semaltianos and i J.H.Tucker
“Novel aspects of oxygen diffusion in Silicon”
J.Mat.Sci: Mat. in Electronics,7 ,347 (1996)
48) N.V.Sarlis, C.A.Londos, L.G.Fytros
“Idendification of Infrared bands in neutron-irradiated Silicon”
J.Appl.Phys 81, 1645 (1997)
49) C.A.Londos, N.V.Sarlis, and L.G.Fytros
‘Isochronal annealing studies of the oxygen-vacancy Centers in neutron irradiated Si’
phys.stat.sol (a) 163, 325 (1997)
50) C.A.Londos, N.V.Sarlis, and L.G.Fytros
‘IR studies of defects formed during postirradiation anneals of Cz-Si’
J.Appl.Phys 84, 3569 (1998)
51) F.Gaiseanou, D. Tsoukalas, C.A. Londos, J. Stoemenos, C.A. Dimitriadis, J. Esteve, C
Postolache and M. Berku
‘Oxygen related transport phenomena near the polysilicon/SiO2 interface on Silicon during
phosphorus diffusion’
Rom. Journ. Phys. 43, 593 (1998)
52) A. Vassilikou-Dova, I.M. Kalogeras, B. Mecalik and C.A. Londos
‘Polarising field orientation and thermal treatment effects on the dielectric behavior of
fluroapatite’
J.Appl. Phys. 85, 352, (1999)
53) C.A.Londos, N.V.Sarlis, and L.G.Fytros
‘A shoulder at 887 cm -1 infrared band in neutron irradiated Si’
J.Appl.Phys 85, 8074 (1999)
54) C.A.Londos, L.G.Fytros and G.I.Georgiou
‘IR Studies of Oxygen-Vacancy Related Defects in Irradiated Silicon’
Defect And Diffusion Forum, Vols 171-172, 1 (1999)
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(Invited review article). in the journal “Defects and Diffusion in Semiconductors”. An annual
retrospective II, ed. D.J. Fisher SCITEC Publications
55) C.A.Londos and L.G.Fytros
‘Investigation of the two IR bands at 1032 and 1043 cm -1 in neutron irradiated silicon’
J. Appl. Phys. 89, 928 (2001)
56) V.V. Emtsev Jr, C.A. J. Ammerlaan, B.A. Andreev, V.V. Emtsev, G.A. Oganesyan, A. Misiuk
and C.A. Londos
‘Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic
pressure’
Journal of Materials Science: Materials in Electronics 12, 223 (2001)
57) C.A. Londos, I.V. Antonova, M. Potsidou, A. Misiuk, J. Bak-Misiuk and A. K. Gutakovskii
“Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform
stress conditions”
J. Appl. Phys. 91, 1198 (2002)
58) C.A. Londos, M. S. Potsidi, A. Misiuk, J. Ratajczak, V. V. Emtsev, G. Antonaras
“Complementary infrared and transmission electron microscopy studies of the effect of high
temperature-high pressure treatments on oxygen-related defects in irradiated silicons”
J. Appl. Phys. 94, 4363 (2003)
59) I. V. Antonova, C. A. Londos, J. Bak-Misiuk, A. K. Gutakovskii, M. S. Potsidi and A. Misiuk.
“Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons”
phys. stat. sol. (a) 199, 207 (2003)
60) C.A. Londos, M. S. Potsidi, J. Bak-Misiuk, A. Misiuk, and V. V. Emtsev
“Pressure assisted evoluion of defects in silicon”
Cryst. Res. Technol. 38, 1058 (2003)
61) L. Bischoff, G. L. R. Mair, C. J. Aidinis, C.A. Londos, Ch. Akhmadaliev and Th. Ganetsos
“A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental
properties and mechanisms”
Ultramicroscopy , 100,1 (2004)
62) C.J. Aidinis, G.L.R. Mair, L. Bischoff, C.A. Londos, Ch Akhmadaliev and Th. Ganetsos
“The temperature dependence of the energy distribution of the beam emitted by a Au82Si18 liquid
metal field-ion emitter.
Nuclear Instruments and Methods in Physics Research B, 222, 627 (2004)
63)G. L. R. Mair, L. Bischoff, C.A. Londos, Th. Ganetsos, Ch. Akhmadaliev and C. J. Aidinis
“An in-depth investigation into the temperature dependence of the mass spectra of the beam
produced by Au82Si18 liquid metal field emitter: mechanisms of ion and cluster emission”
Appl. Phys. A, 81, 385 (2005)
64) I.V. Antonova, A. Misiuk, C. Londos, B. Surma, S. A. Smagulova, A. Bukowski, W. Jung, A.
Barcz
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“Pressure-induced formation of electrically active centers in irradiated silicon: comparison of
electron and neutron irradiation”
Vacuum 77, 507 (2005)
65) C.A.Londos, G.J.Antonaras, M.S. Potsidi, A. Misiuk, I.V.Antonova and V.V. Emtsev
“Production and evolution of defects in neutron-irradiated Si sudjected to termal pre-treatments
under hydrostatic pressure”
J. Phys.: Condens. Matter, 17, S2341 (2005)
66) L.I.Murin, J.L.Lindström, V.P. Markevich, A. Misiuk and C.A.Londos
“Termal double donor annihilation and oxygen precipitation at around 650 o C in Czohraskigrown
Si: local vibrational mode studies”
J. Phys.: Condens. Matter, 17, S2237 (2005)
67) W.Jung, A Misiuk, C.A Londos
“Pressure stimulated creation of oxygen-related defects in oxygen-implated and neutronirradiated
silicon”
Vacuum 78, 199 (2005)
68) I.V.Antonova, A.Misiuk, C.A.Londos
“Electrical properties of multiple-layer structures formed by implementation of nitrogen or oxygen and
annealed under high pressure”
J Appl. Phys. 99, 033506 (2006)
69) M.S.Potidi and C.A.Londos
“The CiCs (SiI) defect in silicon: An infrared spectroscopy study”
J Appl. Phys. 100, 033523 (2006)
70) C.A.Londos, G.D.Antonaras, M.S.Potidi, D.N.Aliprantis, A.Misiuk
“Infrared absorption spectra of defects in carbon doped neutron-irradiated Si”
J.Mater.Sci.: Mater. Electr., 18, 721(2007)
71) C. A. Londos, A. Andrianakis, V. Emtsev and H. Ohyama
“Radiation-induced defects in Czochralski-grown silicon containing carbon and
germanium”
Semicond. Sci. Technol. 24, 075002 (2009)
72) C. A. Londos, A. Andrianakis, V. Emtsev, and H. Ohyama
“Radiation effects on the behavior of carbon and oxygen impurities and the role of
Ge in Czochralski grown Si upon annealing.”
J. Appl. Phys. 105, 123508 (2009)
73) A.Chroneos and C. A. Londos
“Interaction of A-centers with isovalent impurities in silicon”
J. Appl. Phys. 107, 093518 (2010)
74) C. A. Londos, A. Andrianakis,E.N.Sgourou,V. V. Emtsev, and H. Ohyama
“Effect of germanium dopingon the annealing characteristicis of oxygen and carbon-related
defects in Czochralski sSilicon.”
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J. Appl. Phys. 107, 093520 (2010)
Articles in Books
Invited, review article entitled:
“INFRARED STUDIES OF CARBON-RELATED DEFECTS IN IRRADIATED SILICON”
C.A. Londos and M.S.Potsidi
in the book “ Progress in Condensed Matter Physics” ,NOVA SCIENCE PUBLISHERS pp 53-81
(2007)
B: Publications in International Conferences
1) G.Ferenczi,C.A.Londos,T.Pavelka,M.Somogyi and A.Martens
"Identification of the Carbon associated damage levels in Silicon"
14th International Conference on Defects in Semiconductors, 18-22 August,
1986 Paris-France, Edited by H.J. von Bardeleben Trans Tech Publications,
Switzerland.
Mater. Sci. Forum,Vol.10-12,947 (1986).
2) C.A.Londos
"The influence of oxygen on the migration of the carbon interstitial defect in Silicon"
Proceedings "Gettering and Defect Engineering in the Semiconductor
Technology"-GADEST '87, 9-13 October 1987
Edited by H.Richter Acad. Sci. GDR,Frankfurt (Oder) GDR, p.109 (1987)
3) C.A.Londos
"DLTS investigations of the Carbon-related centers in Si"
Proceedings "Gettering and Defect Engineering in the Semiconductor Technology"
GADEST '89, 9-13 October 1989,
Edited by M.Kittler, Sci-Tech Publications,
Solid State Phenomena, Vol.6&7,443 (1989).
4) C.A.Londos
"Diffusivities and Solubilities of various elements in Si",
Proc."Diffusion in Materials", Assuis, France, March 12-25, 1989,
Edited by A.L.Laskar, J.L.Bocquet, G.Brebec and C.Monty, Kluwer
Academic Publishers, NATO ASI Series E:Applied Sciences, Vol 179,665 (1990).
5) C.A.Londos
"Observation of a configurationally unstable defect in Si"
16th International Conference on Defects in Semiconductors Bethlehem-USA,
22-26 July 1991, Edited by M.Stavola and G.G.DeLeo Trans Tech Publications,
Mater. Sci. Forum, Vol.83-87,351 (1992)
6) C.A.Londos
"A search on the identity of the Ev+0.34eV C-related defect in P-Si"
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Proceedings "Gettering and Defect Engineering in the Semiconductor
Technology" GADEST '91, 13-19 October 1991, Germany,
Edited by M.Kittler, Sci-Tech Publications,
Solid State Phenomena, Vol.19-20,247 (1991)
7) W.Licodimos, N.Guskos, C.A.Londos, S.M.Paraskevas, A.Koufoudakis,
C.Mitros, H.Gamari-Seale, D.Niarchos.
"EPR spectrum of Tm(2+) ions in the tetragonal phase of (La,Tm)-Ba-Cu-O
compound"
International conference on Magnetism, 2-6 September Edinburgh,
England,1991.
J. Magnet. Magnetic Mater.104-107, 563(1992)
8) K.Eftaxias, C.A.Londos and P.Dovas
"On the number of repetitive measurements in a laboratory experiment"
1st General Conference of the Balkan Physical Union,
26-28 September 1991, Thessaloniki, Greece,
Edited by K.M.Paraskevopoulos, Vol I, 57-59 (1992)
9) C.A.Londos, A.Vasilikou-Dova, G.Georgiou, L.Fytros
"Spectroscopic investigation of natural Topaz"
1st General Conference of the Balkan Physical Union,
26-28 September 1991, Thessaloniki, Greece,
Edited by K.M.Paraskevopoulos, Vol II, 956-958 (1992)
10) N.Gouskos, W.Likodimos, C.A.Londos, S.M.Paraskevas, A.Koufoudakis,
C.Mitros, H.Gamari-Seale and D.Niarchos
"EPR, XRD and Magnetic measurements of the ceramic YbBa2Cu3O7-δ in the
orthorhombic and tetragonal phase"
1st General Conference of the Balkan Physical Union,
26-28 September 1991, Thessaloniki, Greece,
Edited by K.M.Paraskevopoulos, Vol II, 990-992 (1992)
11) H.Richter, K.Schmalz, C.A.Londos
"Estimation of Carbon Substtitutional Concentration in Czochralski-grown
Silicon by means of Deep-Level Transient Spectroscopy and Infrared
Measurements"
Third German-Greek Workshop on "Materials Research for Information
Technology", Edited by G.Kaiser and N.Constantopoulos, Thessaloniki,
26-27 September 1991. Bilateral Seminars of the International Bureau, Vol.7,27
(1992)
12) N.Guskos, V.Likodimos, C.A.Londos, H.Gamari-Seale, A.Koufoudakis and
C.Mitros
"Zero-field splitting of the ground state of Eu ions in EuBa2Cu3O7-δ compound
with large oxygen deficiency"
26th Congress Ampere on Magnetic Materials, 6-12 September 1992, Athens,
Greece.
Edited by A.Anagnostopoulos, F.Milia, A.Simopoulos, Athens (1992), p.66
12

13) C.A.Londos, S.A.McQuaid, M.J.Binns, R.C.Newman and J.H.Tucker
"Effect of oxygen concentration on the kinetics of oxygen loss and thermal
donor formation in Silicon at temperatures between 350 o C and 500 o C"
Proceedings "Gettering and Defect Engineering in the Semiconductor
Technology" GADEST '93, 9-11 October 1993, Edit. by M.Kittler, Sci-Tech Publications,
Solid State Phenomena, Vol.32-33,161 (1993)
14) S.A.McQuaid, C.A.Londos, M.J.Binns, R.C.Newman and J.H.Tucker
"The kinetics of oxygen loss and Thermal donor formation in Silicon at
temperature between 350 o C and 500 o C"
17th International Conference of Defects in Semiconductors,
18-24 July 1993, Gmunden-Austria, Edited by W.Jantch, Trans Tech
Publications, Switzerland.
Mater.Sci.Forum,Vols.143-147,963 (1994)
15)C.Newman, M.J.Binns, C.A.Londos, S.A.McQuaid and J.H.Tucker
“Oxygen Aggregation Phenomena in Silicon”
Proceedings "Gettering and Defect Engineering in the Semiconductor
Technology" GADEST '95, 2-7 September 1995, Germany
Edited by M.Kittler, Sci-Tech Publications,
Solid State Phenomena, Vol.47-48, 247 (1996)
16) C.A.Londos, G.Georgiou, L.G.Fytros and N.Sarlis
“New Infrared bands in neutron-irradiated Si”
Proceedings "Gettering and Defect Engineering in the Semiconductor
Technology" GADEST '95, 2-7 September 1995, Germany
Edited by M.Kittler, Sci-Tech Publications,
Solid State Phenomena, Vol.47-48, 281 (1996)
17) C.A.Londos, N.V.Sarlis and L.G.Fytros
“An isochronal annealing study of the kinetics of VO and VO2 in neutron -
irradiated Si”
Proceedings - NATO Advanced Research Workshop - “Oxygen ‘96”
“Early stages of Oxygen Precipitation in Silicon, Exeter, UK 26-29 March 1996
Vol. 17, 477 (1996)
18) N.V.Sarlis and C.A.Londos
“Infrared bands association with multivacancy-oxygen defects in Silicon”
CAS ‘96 Proceedings,IEEE, 1996 International Semiconductor Conference,
19th edition October 9-12,1996, Sinaia, ROMANIA. Vol I, 53 (1996)
19) C.A.Londos, N.V.Sarlis and L.G.Fytros
“An IR study of the annealing behaviour of A-center in Silicon”
Proceedings “Gettering and Defect Engineering in the Semiconductor
Technology” GADEST ‘97, 5-10 October 1997,Spa (Belgium)
Edited by C.Claeys,J.Vanhellemont,H.Richter and M.Kittler
Solid State Phenomena Vols 57-58, 245 (1997)
13

20) N.V.Sarlis, C.A.Londos and L.G. Fytros
“Correlations of vibrational frequencies with VO4 defect in irradiated Silicon”
CAS ‘97 Proceedings, IEEE, 1997 International Semiconductor Conference,
20th edition October 7-11, 1997, Sinaia, ROMANIA, Vol I, 59 (1997)
21) C.A Londos, N. Guskos, M. Wabia and J. Grybos
“General aspects of solar cells and photovoltaic systems (PV) used in Greece”
6 th Intern. Symposium on Heat exchange and renewable energy sources,
Szczecin-Swinoujcie (POLAND), 7-9.09.1998, p. 257 (1998) (Invited)
22) F. Gaisenau, D. Tsukalas, J.Stoimenos, C.A. Dimitriadis, C.A Londos, J. Esteve, C. Postoleche
“Atomistic transport phenomena near the polysilicon/SiO2 interface on silicon during the
phosphorus diffusion” Abstract No 526
193 rd Electrochemical Society meeting, May 3-8, (1998), San Diego
23) A. Vassilikou-Dova, B. Macalik, J.M Kalogeras, M. Kalamiotou, C.A. Londos and L.G. Fytros
«TSDS probe of anisotropic polarizability in fluroapatite single crystals”
Intern. Conf. Eurodim’98, 6-12 July 1998, Keele (U.K)
Rad. Eff. Def. Solids 149, 279 (1999)
24) L.G. Fytros, G. I. Georgiou C.A. Londos and V.V. Emtsev
“An infrared investigation of the 887 cm -1 band in Czochralski Silicon”
20 th Intern. Conf. On Defects in Semiconductors, 26-30 July 1998, Berkley-
U.S.A
Physica B 273-274, 312 (1999)
25) V. V. Emtsev Jr, C.A. J. Ammerlaan, B.A Andreev, V.V. Emtsev, G.A. Oganesyan, A. Misiuk,
C.A Londos
“Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic
pressure”
Third Intern. Conf. On Materials for Microelectronics, 16-17 October 2000, Ireland, 123 (2000)
26) A. Misiuk, J. Bak-Misiuk, A. Barcz, A. Romano-Rodriguez, I.V. Antonova, V.P. Popov, C.A.
Londos and J. Sun
“Effect of annealing at argon pressure up to 1.2 Gpa on hydrogen-plasma etched and hydrogen –
implanted single-crystalline Silicon.”
Proceedings of the Conf.‘Hydrogen Materials Science and Chemistry of Hydrides, ICHMS’ 99,
Katsively, Ukraine 2-8/9/1999.
Intern. Journal of Hydrogen Energy, 26, 483 (2001)
27) C.A. Londos, L. G. Fytros , A. Misiuk, J. Bak-Misiuk, M. Prujsczczy , M. Potsidou
“The effect of high pressure-high temperature treatment on neutron irradiation induced defects
in Czochralski silicon”
Intern. Conf. On Solid State Crystals-Materials Science and Applications (9/10-13/10/2000,
Zakopane, Poland (ICSS’ 2000),
SPIE Proceedings, 4412 , 91 (2001)
28) V.V. Emtsev Jr, V. V. Emtsev, G.A. Organesyan, A. Misiuk, C.A. Londos
14

“Peculiarities of the thermal donor formation in Czochralski grown silicon under high
hydrostatic pressure”
Intern. Conf. On Solid State Crystals-Materials Science and Applications (9/10-13/10/2000,
Zakopane, Poland (ICSS’ 2000), SPIE Proceedings, 4412, 81 (2001)
29) N. Sarlis, H. Londos, G. Kalkanis
“Teaching Transverse (but not Longitudinal?) Electromagnetic Waves-The Underlying Reasons
and an Instructional Approach ”
Third International Conference on Science Education Research in the Knowledge Based Society
Proceedings, Vol. II, 609 (2001)
30) J. Bak-Misiuk, C. A. Londos, A. Misiuk, L.G. Fytros, H. B. Surma, J. Trela, K. Papastergiou, J.
Domagala
“Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon”
E-MRS 2000 Proceedings (30/5-2/6/2000, Strasbourg, France)
Intern. J. Inorganic Materials, 3 , 1307 (2001)
31) C.A. Londos, M. Potsidou, A. Misiuk, V.V. Emtsev, J. Bak-Misiuk
“The effect of high temperature-high pressure treatment on the annealing behavior of VO center
in neutron-irradiated Czochralski silicon”
21 st Intern. Conf. On Defects in Semiconductors, 16-20 July 2001, Giessen-
Germany
Physica B, 308-310, 313 (2001)
32) C.A. Londos, M. Potsidou, A. Misiuk and I.V. Antonova
“A study of the Conversion of the VO to the VO2 Defect in Heat-Treated Silicon under Stress”
Proceedings “Gettering and Defect Engineering in the Semiconductor
Technology” GADEST ‘01, 30/09-04/10 2001, Catania (Italy)
Edited by V.Raineri, H.Richter and M.Kittler
Solid State Phenomena Vols 82-84, 249 (2002)
33) V.V. Emtsev, A. Misiuk ,B.A. Andreev, V.V. Emtsev Jr, C.A. Londos, G.A. Oganesyan and
D.S. Poloskin
“Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon”
Proceedings “Gettering and Defect Engineering in the Semiconductor
Technology” GADEST ‘01, 30/09-04/10 2001, Catania (Italy)
Edited by V.Raineri, H.Richter and M.Kittler
Solid State Phenomena Vols 82-84, 259 (2002)
34) V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, B. A. Andreev, D.I.
Kuritsyn, A. Misiuk, B. Surma and C. A. Londos
“Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high
hydrostatic pressures”
10 th Intern. Conf. on Shallow Levels Centers in Semiconductors (10 th SLCS)
Warsaw, Poland 24-27 July 2002
phys. stat. sol (b) 235,75 (2003)
35) V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, A. Misiuk, B. Surma,
A. Bukowski, C. A. Londos, M.S. Potsidi
15

“Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon”
Intern. Conf. On Solid State Crystals 2002: Materials Science and Applications (14/10-
18/10/2002, Zakopane, Poland (ICSS’ 2002), (invited)
Cryst. Res. Technol. 38, 394 (2003)
36) I. V. Antonova, A. Misiuk, C. Londos, B. Surma, S. A. Smagulova, A. Bukowski,
W. Jung, A. Barcz
“Pressure induced formation of the electrically active centers in electron and
neutron irradiated silicon”
Proceedings of the 7 th Intern. Conf. On Electron Beam Technologies (EBT 2003) (1-6/6/2003,
Varna, Bulgaria
37) B. Surma, C. A. Londos, V. V. Emtsev, A. Misiuk, A. Bukowski, M.S. Potsidi “Infrared
studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at
T=450-650 o C under hydrostatic pressure”
E-MRS 2002, spring meeting, Strasbourg, 18-21/6/2002, Strasbourg, France
J.Mater. Sci. Engin. B 102, 339 (2003)
38) C.A. Londos, M. S. Potsidi, and E. Stakakis
“Carbon-related complexes in neutron-irradiated silicon”
22 nd Intern. Conf. On Defects in Semiconductors, 28/7-1/8/ 2003, Aarhus,
Denmark
Physica B 340-342 , 551 (2003)
39) I. V. Antonova, A. Misiuk, C.A. Londos, A. Barcz, E. N. Vandyshev, J. Bak-Misiuk, K.S.
Zhuravlev, M. Kaniewka
“Defect-related diffusion of hydrogen in silicon”
22 nd Intern. Conf. On Defects in Semiconductors, 28/7-1/8/ 2003, Aarhus,
Denmark
Physica B 340-342, 659 (2003)
40) V.V. Emtsev, B. A. Andreev, V. Yu Davydov, D. S. Poloskin, G. A. Oganesyan, D. I.
Kryzhkov, V. B. Shmagin, V. V. Emtsev, Jr, A. Misiuk and C. A. Londos
“Stress-induced changes of thermal donor formation in heat-treated Czochralski grown silicon”
22 nd Intern. Conf. On Defects in Semiconductors, 28/7-1/8/ 2003, Aarhus,
Denmark
Physica B 340-342, 769 (2003)
41) W. Jung, M. Kaniewska, A. Misiuk, C.A. Londos
“Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high
pressure annealing”
Proceedings of the 10 th Intern. Conf. of Defects- Imaging and Physics in Semiconductors, DRIP-X
29/9- 2/10/ 2003, Batz-Sur-Mer, Loire Atlantique, France
Eur. Phys. J. Appl. Phys. 27, 115 (2004)
42) C. A. Londos, M.S. Potsidi, A. Misiuk, J. Bak-Misiuk, A. Shalimov and V. V. Emtsev
“Investigations of the effect of high pressure on the annealing behavior of oxygen related defects
in silicon”
16

Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘03,
21-26/9/2003 , Berlin (Germany)
Edited by H.Richter and M.Kittler
Solid State Phenomena Vols 95-96, 59 (2004)
43) C. J. Aidinis, L. Bischoff, G. L. R. Mair, C.A. Londos, Th. Ganetsos and Ch. Akhmadaliev
“Study of a liquid metal field ion emitter for the production of Si ions”
Micro and Nano Engineering Conf. 22-25/09/2003, Cambridge (UK)
Microelectronic Engineering Vols 73-74, 116 (2004)
44) B. Surma, A. Misiuk, A. Wnuk, C. A. Londos, and A. Bukowski
‘Optical studies of defects generated in neutron-irradiated Cz-Si during HP-HT treatment’
International Conference on Solid State Crystals- 7 th Polish Conf. on Crystal Growth (ICSSC-
7PCCP), 16/05-20/05/2004, Zakopane, Poland
Cryst. Res. Technol. 40, 471 (2005)
45) C. A. Londos, M. S. Potsidi and V. V. Emtsev
‘Effect of carbon on oxygen precipitation in Czochralski silicon’
10 th International Conference on Extended Defects in Semiconductors, EDS 2004, 11/09-
17/09/2004, Chernogolovska, Russia
phys. stat. sol (c), 2, 1963 (2005)
46) A. Misiuk, B. Surma, C. A. Londos, J. Bak-Misiuk, W. Wierzchowski, K. Wieteska and W.
Graeff
‘Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high
pressure’
10 th International Conference on Extended Defects in Semiconductors, EDS 2004, 11/09-
17/09/2004, Chernogolovska, Russia
phys. stat. sol (c), 2,1812 (2005)
47) L.Bischoff, W.Pilz, Th.Ganetsos, Ch. Akmadaliev, C.J. Aidinis and C.A.Londos
‘On the temperature dependence of the mass spectra of AuGe and AuGeSi liquid metal alloy ion sources
’
Second Confedence on Microelectronics, Microsystems and Nanotechnology, 14-17 November
2004, Athens, Greece
Journal of Physics: Conference Series 10, 214 (2005)
48) C.A. Londos, G.D. Antonaras, M.S. Potsidi, A. .Misiuk, V.V. Emtsev
‘The effect of thermal treatments on the annealing behaviour of oxygen-vacancy complexes in irradiated
carbon-doped silicon’
Solid State Phenomena Vols. 108-109, 205 (2005)
49) L.I. Murin, J.L. Lindström, B.G. Svenson, V.P. Markervich, A.R. Peaker and C.A.
Londos
‘VOn ( n ≥ 3)
Defects in Irradiated ans Heat-Treated Silicon’
Solid State Phenomena Vols. 108-109, 267 (2005)
50) J. Bak-Misiuk, A. .Misiuk, B. Surma, A. Shalimov, C.A. Londos
‘Infuence of neutron irradiation on stress-induced oxygen precipitation in Cz-Si’
Solid State Phenomena Vols. 108-109, 169 (2005)
17

51) V.V. Emtsev, B.A. Andreev, V.V. Emtsev Jr., G.A. Oganesyan, D.I. Kryzhkov,
A. Misiuk, C.A.Londos and M.S. Potsidi
o
‘New donors in Czochralski Grown Silicon Annealed at T ≥ 600 C under Compressive Stress’
Solid State Phenomena Vols. 108-109, 181 (2005)
52) L.I.Murin, V.P.Markevich,J.L.Lindstrom, C.A.Londos
‘Optically active defects formed upon thermal double donor annihilation in Si’
Proceedings 5 th International Conference "High Education Science, Industry,
International Cooperation"
Edited by V.V.Ponorgadov et al, Minsk, Belarus, 13-15 October 2004, pp111-
114,(2005)
(Invited)
53) W.Jung, A.Misiuk, C.A.Londos, D.Yang, I.V.Antonova, M.Prujszczyk
‘Influence of high pressure annealing on electrical properties of surface layer of
neutron irradiated or germanium doped Cz-Si.’
X Seminar of Surface and thin layer structures (17-21) May 2005 Szklarska
Poreba, Poland
Optica Applicata, 35, 393 (2005)
54) I.V.Antonova, A. Misiuk, C.A.Londos
‘Electrical characteristics of SOI-Like structures formed in nitrogen or oxygen
implanted silicon treated under high pressure’
12 th International Symposium on Silicon-on-Insulator Technology and Devices
Edited by G.K. Celler, S. Cristoloveanu, J.G. Fossum, F. Ganiz, K. Izumi, Y.M.
Kim,
207 th Meeting of the Electrochemical Society (15-20) May pp.325-330 2005,
Quebec, Canada
Silicon-on-Insulator Technology and Devices XII, DV-2005-03
55) I.V.Antonova, A. Misiuk, C.A.Londos
‘Electrical behaviour of SOI-Like structures formed under high pressure in
nitrogen or oxygen implanted silicon’
20 th AIRAPT-43 rd EHPRG Conference in Karlsruhe (27.06-01.07) 2005
Programme and book of Abstracts p.208, abstract T3-P306
56) C.A.Londos, M.S.Potsidi, G.D.Antonaras, A.Andrianakis
‘Isochronal annealing studies of carbon-related defects in irradiated silicon’
23 nd Intern. Conf. On Defects in Semiconductors, (25-29) July 2005, Awaji Island,
Japan
Physica B 376-377, 165 (2006)
57) A.Misiuk, D.Yang, B.Surma,C.A.Londos, J.Bak-Misiuk, A.Andrianakis
‘Defects in Ge-doped Cz-Si annealed under high stress’
Proceedings of the 11 th Intern. Conf. on Defects-Recognition, Imaging and Physics in
Semiconductors, DRIP-X 15-19 September 2005, Beijing, China
18

Mater. Sci. Semicond. Process. 9, 82 (2006)
58) A.Misiuk, C.A.Londos, J.Bak-Misiuk, D.Yang, W.Jung, M.Prujszcyk
‘Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-
Si’
E-MRS Proceedings, Symp.U (Si-based Materials for advanced Microelectronics devices:
Synthesis, defects, and diffusion), 29/5-2/6/2006, Strasbourg, France
Nucl. Instr.Meth.Phys. Res.B, 253, 295, (2006)
59) A. Misiuk, B. Surma, J. Bak-Misiuk, C.A.Londos, P. Vagovic, I. Kovacevic, B.
Pivac,W. Jung, M. Prujszczyk
‘Revealing the radiation-induced effects in silicon by processing at enhanced
temperatures- pressures’
6 th European Conference on Luminescent Detectors and Transformers of Ionizing
Radiation
(LUMDETR 2006) (19-23) June, 2006, Lviv, Ukraine
Radiation measurements, 42,689 (2007)
60) C.A.Londos, A. Andrianakis, D. Aliprantis, H. Ohyama
‘IR studies of oxygen-vacancy defects in electron irradiated Ge-doped Si’
24 rth Intern. Conf. On Defects in Semiconductors, 22/7-27/7/ 2007, Albuquerque,
New Mexico,USA
Physica B 401-402, 487 (2007)
61) C.A.Londos, G.D. Antonaras, M.S. Potsidi, E.N. Sgourou, I.V. Antonova, A.
Misiuk
‘IR studies on the interaction between thermal and radiation defects in Si’
GADEST ’07, 14-19/10/2007, Erice, Italy
Solid State Phenomena 131-133, 351, (2008)
62) C.A. Londos, A. Andrianakis, V.V. Emtsev, G.A. Oganesyan, H. Ohyama
“The effect of germanium doping on the evolution of defects in silicon.”
E-MRS Proceedings, Symp.I (Front-end junction and contact formation in future Silicon-
Germanium based devices), 26-30/5/2008, Strasbourg, France.
Materials Science and Engineering B 154–155, 133–136 (2008)
63) C.A. Londos,G.D. Antonaras, M.S. Potsidi, A. Misiuk
“The influence of thermal treatments under hydrostatic pressure prior to
irradiation on the annealing characteristics of the VO defect in Si.”
E-MRS Proceedings, Symp.K (Advanced silicon material research for electronic
and photovoltaic applications), 26-30/5/2008, Strasbourg, France.
Materials Science and Engineering B 159–160, 122–127 (2009)
64) A. Ide, R.Horiuchi, K. Takakura, M.Yoneoka, H. Ohyama, C.A. Londos, A.
Andrianakis, N.Inoue
“The production of the defects in electron-irradiated Si1-x Gex crystal evaluated by
19

IR spectroscopy” Extended Abstracts
28 th Electronic Material Symposium (EMS-28), 8-10/7/2009, Shiga, Japan
65) A.Misiuk, W.Wierzchowski, B.Surma, A.Wnuk, J.Bak-Misiuk, K.Wieteska ,
A.Barcz, A.Andrianakis, C.A.Londos, D.Yang, M.Prujszczyk, W.Graeff
“Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure.”
9 th International School and Symposium on Synchrotron Radiation in Natural
Sciences (ISSR NS-9) 15-20/6/2009, Ameliowka, Poland
Radiation Physics and Chemistry 78, S64–S66 (2009)
66) A. Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, J.Bak-Misiuk,
M. Prujszczyk, C.A. Londos, W. Graeff
“Thermally induced defects in silicon irradiated with fast neutrons.”
9 th International School and Symposium on Synchrotron Radiation in Natural
Sciences (ISSR NS-9) 15-20/6/2009, Ameliowka, Poland
Radiation Physics and Chemistry 78, S67–S70 (2009)
67) C.A. Londos, A. Andrianakis, V.V. Emtsev, H. Ohyama
“The effect of germanium doping on the behaviour of oxygen and carbon
impurities and radiation related defects in silicon”
25 th Intern. Conf. on Defects in Semiconductors (ICDS-25) 20-24/7/2009,
St. Petersburg, Russia
Physica B 404 , 4693 (2009)
68) L.I.Murin, B.G. Svenson, J.L.Lindstrom,V.P.Markevich and C.A.Londos
“Trivacancy- oxygen complex in silicon: Local Vibrational Mode
characterization.”
25 th Intern. Conf. on Defects in Semiconductors (ICDS-25) 20-24/7/2009,
St. Petersburg, Russia
Physica B 404 , 4658 (2009)
69) C.A. Londos, A. Andrianakis, D. Aliprantis, E.N. Sgourou, V.V. Emtsev, H.
Ohyama
“The effect of germanium doping on the production of carbon-related defects in
electron-irradiated Czochralski silicon.”
GADEST ’09 Conference 26/9-2/10/2009, Berlin, Germany
Solid State Phenomena 156-158, 187-192, (2010)
70) A. Andrianakis, C.A. Londos, A. Misiuk, V.V. Emtsev, G.A. Oganesyan, H.
Ohyama
“The production of vacancy-oxygen defects in electron-irradiated Cz-Si initially
treated at high temperature and high pressure”
GADEST ’09 Conference 26/9-2/10/2009, Berlin, Germany
Solid State Phenomena 156-158, 123-128, (2010)
71) L.I. Murin, B.G. Svenson, J.L. Lindström,V.P. Markervich, and C.A. Londos
“Divacancy- oxygen and trivacancy- oxygen complexes in silicon: Local
Vibrational Mode studies.”
20

GADEST ’09 Conference 26/9-2/10/2009, Berlin, Germany
Solid State Phenomena 156-158, 129-134, (2010)
72) A. Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, C.A. Londos, A.Andrianakis,
J.Bak-Misiuk, D.Yang and B.Surma
“Defect structure of Nitrogen doped Czochralski Silicon annealed under enhanced pressure”
Proceedings of the 8 th national meeting of synchrotron Radiation users, 24-26/9/2009,
Podlesice,Poland
Acta Physica Polonica A 117,344 (2010)
21