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Microsystem technology (MST) - Geert's pages

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RF Passive Integration on Si<br />

thin-film inductors & capacitors (Philips PASSI TM )<br />

IN3 : 5 µm Al<br />

IN1,2 : 0.5 µm Al<br />

425 nm PECVD silicon nitride<br />

= 145 pF/mm 2<br />

high-resitivity silicon, ρ > 4 kΩ.cm<br />

PECVD silicon oxide<br />

passivation<br />

35

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