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Introduction into defect studies in ceramic materials(III) - Positron ...

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Defect Chemical Reaction<br />

3. Electrons, Holes, and Defect Ionization.<br />

• “Intr<strong>in</strong>sic electronic” reaction:<br />

•<br />

null = e′<br />

+ h<br />

( 2.<br />

24)<br />

•<br />

•<br />

•<br />

•<br />

The formation energy is the band gap.<br />

When electrons and holes are tightly bound to an ion, or otherwise<br />

localized at a lattice site, the whole is considered to be ionic <strong>defect</strong>s.<br />

The valence state of <strong>defect</strong>s can be vary.<br />

Changes <strong>in</strong> valence take place via ionization reactions such as:<br />

••<br />

•<br />

V ′ O + e = VO<br />

( 2.<br />

25)<br />

• • ••<br />

Zni<br />

+ h = Zni<br />

For which equilibrium constants can be written:<br />

( 2.<br />

26)<br />

K<br />

1(<br />

2)<br />

K<br />

1(<br />

2)<br />

[ ] •<br />

VO<br />

[ V ] •<br />

O n<br />

[ ] ••<br />

Zni<br />

[ V ] h<br />

= •<br />

= •<br />

i<br />

∆g<br />

= exp( −<br />

kT<br />

1<br />

∆g<br />

= exp( −<br />

kT<br />

2<br />

)<br />

)<br />

9<br />

( 2.<br />

27)<br />

( 2.<br />

28)

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