BSM 75 GB 120 DN2 - Datasheet Catalog
BSM 75 GB 120 DN2 - Datasheet Catalog
BSM 75 GB 120 DN2 - Datasheet Catalog
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<strong>BSM</strong> <strong>75</strong> <strong>GB</strong> <strong>120</strong> <strong>DN2</strong><br />
Electrical Characteristics, at T j = 25 °C, unless otherwise specified<br />
Parameter Symbol Values Unit<br />
min. typ. max.<br />
Static Characteristics<br />
Gate threshold voltage<br />
V GE = V CE, I C = 3 mA<br />
Collector-emitter saturation voltage<br />
V GE = 15 V, I C = <strong>75</strong> A, T j = 25 °C<br />
V GE = 15 V, I C = <strong>75</strong> A, T j = 125 °C<br />
Zero gate voltage collector current<br />
V CE = <strong>120</strong>0 V, V GE = 0 V, T j = 25 °C<br />
V CE = <strong>120</strong>0 V, V GE = 0 V, T j = 125 °C<br />
Gate-emitter leakage current<br />
V GE = 20 V, V CE = 0 V<br />
AC Characteristics<br />
Transconductance<br />
V CE = 20 V, I C = <strong>75</strong> A<br />
Input capacitance<br />
V CE = 25 V, V GE = 0 V, f = 1 MHz<br />
Output capacitance<br />
V CE = 25 V, V GE = 0 V, f = 1 MHz<br />
Reverse transfer capacitance<br />
V CE = 25 V, V GE = 0 V, f = 1 MHz<br />
V GE(th)<br />
4.5 5.5 6.5<br />
V CE(sat)<br />
-<br />
-<br />
I CES<br />
-<br />
-<br />
2.5<br />
3.1<br />
1<br />
4.5<br />
3<br />
3.7<br />
1.5<br />
-<br />
I GES<br />
- - 320<br />
g fs<br />
31 - -<br />
C iss<br />
- 5.5 -<br />
C oss<br />
- 0.8 -<br />
C rss<br />
- 0.3 -<br />
V<br />
mA<br />
nA<br />
S<br />
nF<br />
Semiconductor Group 2 Mar-29-1996
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