BSM 75 GB 120 DN2 - Datasheet Catalog

BSM 75 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type V CE I C Package Ordering Code
BSM 75 GB 120 DN2 1200V 105A HALF-BRIDGE 1 C67076-A2106-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V CE 1200 V
Collector-gate voltage
R GE = 20 kΩ
V CGR
1200
Gate-emitter voltage V GE ± 20
DC collector current
T C = 25 °C
T C = 80 °C
Pulsed collector current, t p = 1 ms
T C = 25 °C
T C = 80 °C
Power dissipation per IGBT
T C = 25 °C
I C
105
75
I Cpuls
210
150
P tot
625
Chip temperature T j + 150 °C
Storage temperature T stg -55 ... + 150
Thermal resistance, chip case R thJC ≤ 0.2 K/W
Diode thermal resistance, chip case R thJCD ≤ 0.5
Insulation test voltage, t = 1min. V is 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
A
W
Semiconductor Group 1 Mar-29-1996

BSM 75 GB 120 DN2
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V GE = V CE, I C = 3 mA
Collector-emitter saturation voltage
V GE = 15 V, I C = 75 A, T j = 25 °C
V GE = 15 V, I C = 75 A, T j = 125 °C
Zero gate voltage collector current
V CE = 1200 V, V GE = 0 V, T j = 25 °C
V CE = 1200 V, V GE = 0 V, T j = 125 °C
Gate-emitter leakage current
V GE = 20 V, V CE = 0 V
AC Characteristics
Transconductance
V CE = 20 V, I C = 75 A
Input capacitance
V CE = 25 V, V GE = 0 V, f = 1 MHz
Output capacitance
V CE = 25 V, V GE = 0 V, f = 1 MHz
Reverse transfer capacitance
V CE = 25 V, V GE = 0 V, f = 1 MHz
V GE(th)
4.5 5.5 6.5
V CE(sat)
-
-
I CES
-
-
2.5
3.1
1
4.5
3
3.7
1.5
-
I GES
- - 320
g fs
31 - -
C iss
- 5.5 -
C oss
- 0.8 -
C rss
- 0.3 -
V
mA
nA
S
nF
Semiconductor Group 2 Mar-29-1996

BSM 75 GB 120 DN2
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at T j = 125 °C
Turn-on delay time
t d(on)
V CC = 600 V, V GE = 15 V, I C = 75 A
R Gon = 15 Ω
- 30 60
Rise time
t r
V CC = 600 V, V GE = 15 V, I C = 75 A
R Gon = 15 Ω
- 70 140
Turn-off delay time
t d(off)
V CC = 600 V, V GE = -15 V, I C = 75 A
R Goff = 15 Ω
- 450 600
Fall time
V CC = 600 V, V GE = -15 V, I C = 75 A
R Goff = 15 Ω
t f
- 70 100
ns
Free-Wheel Diode
Diode forward voltage
I F = 75 A, V GE = 0 V, T j = 25 °C
I F = 75 A, V GE = 0 V, T j = 125 °C
Reverse recovery time
I F = 75 A, V R = -600 V, V GE = 0 V
di F /dt = -900 A/µs, T j = 125 °C
Reverse recovery charge
I F = 75 A, V R = -600 V, V GE = 0 V
di F /dt = -900 A/µs
T j = 25 °C
T j = 125 °C
V F
-
-
2.3
1.8
t rr
- 0.125 -
Q rr
-
-
3.2
12
2.8
-
-
-
V
µs
µC
Semiconductor Group 3 Mar-29-1996

BSM 75 GB 120 DN2
Power dissipation
P tot = ƒ(T C )
parameter: T j
≤ 150 °C
650
Safe operating area
I C = ƒ(V CE )
parameter: D = 0, T C = 25°C , T j
≤ 150 °C
10 3
W
550
A
t p
= 19.0µs
P tot
500
10 2
450
400
350
300
10 1
1 ms
250
200
150
10 0
I C
10 0 10 1 10 2 10 3 V
100 µs
10 ms
100
DC
50
0
0 20 40 60 80 100 120 °C 160
T C
10 -1
V CE
Collector current
I C = ƒ(T C )
parameter: V GE
≥ 15 V , T j
≤ 150 °C
I C
90
10 -1
Transient thermal impedance IGBT
Z th JC = ƒ(t p )
parameter: D = t p / T
120
10 0
A
K/W
100
80
70
60
50
10 -2
D = 0.50
0.20
40
30
20
10 -3
single pulse
0.10
0.05
0.02
0.01
10
0
0 20 40 60 80 100 120 °C 160
T C
Z thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
10 -4
t p
s
Semiconductor Group 4 Mar-29-1996

BSM 75 GB 120 DN2
Typ. output characteristics
I C = f (V CE )
parameter: t p = 80 µs, T j = 25 °C
Typ. output characteristics
I C = f (V CE )
parameter: t p = 80 µs, T j = 125 °C
150
A
150
A
I C
120
110
100
17V
15V
13V
11V
9V
7V
I C
120
110
100
17V
15V
13V
11V
9V
7V
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
0
0 1 2 3 V 5
V CE
10
0
0 1 2 3 V 5
V CE
Typ. transfer characteristics
I C = f (V GE )
parameter: t p = 80 µs, V CE = 20 V
150
A
I C
120
110
100
90
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10 V 14
V GE
Semiconductor Group 5 Mar-29-1996

BSM 75 GB 120 DN2
Typ. gate charge
V GE = ƒ(Q Gate )
parameter: I C puls = 75 A
20
Typ. capacitances
C = f (V CE )
parameter: V GE = 0, f = 1 MHz
10 2
V GE
V
16
C
nF
14
600 V
800 V
10 1
12
10
Ciss
8
6
4
2
10 0
Coss
Crss
0
0 100 200 300 400 nC 550
Q Gate
10 -1
0 5 10 15 20 25 30 V 40
V CE
Reverse biased safe operating area
I Cpuls = f(V CE ) , T j = 150°C
parameter: V GE = 15 V
Short circuit safe operating area
I Csc = f(V CE ) , T j = 150°C
parameter: V GE = ± 15 V, t SC ≤ 10 µs, L < 50 nH
2.5
12
I Cpuls
/I C
I Csc
/I C
1.5
8
6
1.0
4
0.5
2
0.0
0 200 400 600 800 1000 1200 V 1600
V CE
0
0 200 400 600 800 1000 1200 V 1600
V CE
Semiconductor Group 6 Mar-29-1996

BSM 75 GB 120 DN2
Typ. switching time
I = f (I C ) , inductive load , T j = 125°C
par.: V CE = 600 V, V GE = ± 15V, R G = 15 Ω
10 4
Typ. switching time
t = f (R G ) , inductive load , T j = 125°C
par.: V CE = 600V, I C = 75 A
10 4
ns
ns
t
t
10 3
10 3
tdoff
tdoff
10 2
tr
tf
10 2
tr
tdon
tf
tdon
10 1
0 20 40 60 80 100 120 140 A 180
I C
Typ. switching losses
E = f (I C ) , inductive load , T j = 125°C
par.: V CE = 600 V, V GE = ± 15 V, R G = 15 Ω
10 1
0 10 20 30 40 50 60 Ω 80
R G
Typ. switching losses
E = f (R G ) , inductive load , T j = 125°C
par.: V CE = 600 V, V GE = ± 15 V, I C = 75 A
40
30
E
mWs
30
Eon
E
mWs
Eon
25
20
20
15
15
Eoff
10
Eoff
10
5
5
0
0 20 40 60 80 100 120 140 A 180
I C
0
0 10 20 30 40 50 60 Ω 80
R G
Semiconductor Group 7 Mar-29-1996

BSM 75 GB 120 DN2
Forward characteristics of fast recovery
reverse diode I F = f(V F )
parameter: T j
Transient thermal impedance
Z th JC = ƒ(t p )
parameter: D = t p / T
Diode
150
A
10 0
K/W
I F
120
110
10 -1
Z thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
100
90
80
70
60
50
40
30
20
T j =125°C
T j =25°C
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
0
0.0 0.5 1.0 1.5 2.0 V 3.0
V F
10 -4
t p
s
Semiconductor Group 8 Mar-29-1996

BSM 75 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 250 g
Semiconductor Group 9 Mar-29-1996

This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.