BSM 75 GB 120 DN2 - Datasheet Catalog
BSM 75 GB 120 DN2 - Datasheet Catalog
BSM 75 GB 120 DN2 - Datasheet Catalog
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<strong>BSM</strong> <strong>75</strong> <strong>GB</strong> <strong>120</strong> <strong>DN2</strong><br />
Power dissipation<br />
P tot = ƒ(T C )<br />
parameter: T j<br />
≤ 150 °C<br />
650<br />
Safe operating area<br />
I C = ƒ(V CE )<br />
parameter: D = 0, T C = 25°C , T j<br />
≤ 150 °C<br />
10 3<br />
W<br />
550<br />
A<br />
t p<br />
= 19.0µs<br />
P tot<br />
500<br />
10 2<br />
450<br />
400<br />
350<br />
300<br />
10 1<br />
1 ms<br />
250<br />
200<br />
150<br />
10 0<br />
I C<br />
10 0 10 1 10 2 10 3 V<br />
100 µs<br />
10 ms<br />
100<br />
DC<br />
50<br />
0<br />
0 20 40 60 80 100 <strong>120</strong> °C 160<br />
T C<br />
10 -1<br />
V CE<br />
Collector current<br />
I C = ƒ(T C )<br />
parameter: V GE<br />
≥ 15 V , T j<br />
≤ 150 °C<br />
I C<br />
90<br />
10 -1<br />
Transient thermal impedance I<strong>GB</strong>T<br />
Z th JC = ƒ(t p )<br />
parameter: D = t p / T<br />
<strong>120</strong><br />
10 0<br />
A<br />
K/W<br />
100<br />
80<br />
70<br />
60<br />
50<br />
10 -2<br />
D = 0.50<br />
0.20<br />
40<br />
30<br />
20<br />
10 -3<br />
single pulse<br />
0.10<br />
0.05<br />
0.02<br />
0.01<br />
10<br />
0<br />
0 20 40 60 80 100 <strong>120</strong> °C 160<br />
T C<br />
Z thJC<br />
10 -5 10 -4 10 -3 10 -2 10 -1 10 0<br />
10 -4<br />
t p<br />
s<br />
Semiconductor Group 4 Mar-29-1996
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