Phonon lifetimes in silicon from 50 GHz to 15 THz - University of ...

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Time-resolved Raman spectra LO phonon t = 0.7 ps t = -10 ps
Time-resolved anti-Stokes intensities ‣ Integral of intensity in range 600-650 anti- Stokes wavenumbers gives electronic scattering by interband hole excitations. ‣ Integral (after background subtraction) of 490-550 cm -1 gives intensity of LO phonon scattering ‣ Pump power: 86 mW
Page 1 and 2: Phonon lifetimes in silicon from 50
Page 3 and 4: Si phonon dispersion high-field car
Page 5 and 6: Time domain thermoreflectance and p
Page 7 and 8: Broadband acoustic pulses • Fouri
Page 9 and 10: f
Page 11 and 12: Dilute SiGe alloys grown by gas-sou
Page 13: Pump-probe Raman spectrometer
Page 17: Summary • Lifetime of 100 GHz lon

Phonon lifetimes in silicon from 50 GHz to 15 THz - University of ...

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