Surface and bulk passivation of multicrystalline silicon solar cells by ...

LIST OF FIGURES
Figure
Page
1.1 World solar module production 1980-2000 [ 16] 4
I.2 A schematic of photo generation effect .......................................... . ........ 5
I.3 An electrical equivalent circuit of a solar cell .......................................... 7
I.4 The I-V characteristic of a. solar cell with maximum power point [17] 8
1.5 Solar cell production and capacity [28] II
1.6 An. illustration of a. typical crystalline Si solar cell [29] 13
1.7 A pictorial representation of • various types of point, line, area and volume
defects: (a) foreign interstitial; (b) dislocation; (c) self-interstitial; (d)
precipitate; (e) extrinsic stacking fault and partial dislocation; (f) foreign
substitutional; (g) vacancy; (h) intrinsic stacking fault surrounded by a partial
dislocation; (i) foreign substitutional [30] .. 14
2.1 SEM picture of a typical texturized silicon surface using conventional NaOH
texturization bath [39]
2.2 " The calculated reflectance spectra of a bare Si wafer for different surface
conditions: (a) polished and (b) (I00) textured. Wafer thickness =300 μm [40]
2I
21
2.3 The calculated reflectance spectra of a Si wafer coated with SiN (n=2 and
a=5.0): _double sided polished (solid line) and (I00) double sided textured
(dotted line). Wafer thickness = 30 .0 μm [42] ........................................... 23
2.4 The spectrum of AM1.5 radiation [43] 24
2.5 Deposition of SiNx:H fir in (a) a direct-plasm reactor and (h) a remote-plasm
reactor[50] 28
2.6 The refractive index as a function of N/Si ration for SiΝ X:H films [52] .A line is
drawn through the data for visual guidance only 29
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