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RC5T583S PCB LAYOUT GUIDE - Ricoh

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<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

<strong>RC5T583S</strong><br />

<strong>PCB</strong> Layout Guide<br />

Version 1.0<br />

September 28, 2012<br />

RICOH COMPANY, LTD.<br />

Electronic Devices Company<br />

©2012


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

Abstract<br />

This document describes the constraints and points when designing the <strong>PCB</strong> layout with <strong>RC5T583S</strong>.<br />

This guide provides examples to explain of how it can be done.<br />

The <strong>PCB</strong> layout example is helpful to achieve optimal <strong>RC5T583S</strong> performance.<br />

Contents<br />

1. Basic Policy and Examples of Board Pattern ............................................................................................. 3<br />

1.1 ................................................................................................................................. 3<br />

1.1.1 DCDC1, DCDC2 and DCDC3 .....................................................................................................................3<br />

1.1.2 DCDC0 (High current type) .........................................................................................................................8<br />

1.2 RTC Block...................................................................................................................................... 12<br />

2. Recommended External Parts List (*Maximum height: 3.0mm)......................................................... 14<br />

3 Parts Place Example ......................................................................................................................... 15<br />

©2012 Page 2


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

1. Basic Policy and Examples of Board Pattern<br />

1.1 <br />

1.1.1 DCDC1, DCDC2 and DCDC3<br />

Current Loop<br />

Cin_A<br />

Analog<br />

Power<br />

Supply<br />

RCT583S<br />

Buffer<br />

Power<br />

Supply<br />

Cin_B<br />

(Input capacitance)<br />

VFB<br />

Control<br />

and<br />

Analog<br />

BUF<br />

LX<br />

L<br />

Vout<br />

Cout<br />

(Output capacitance)<br />

Analog<br />

GND<br />

Buffer<br />

GND<br />

Fig.1-1 Simplified Schematic for DCDC<br />

DCDC1 DCDC2 DCDC3<br />

Analog Power Supply<br />

VIN3<br />

Buffer Power Supply VIN2, 5 VIN4 VIN6, 7<br />

Buffer GND GND 2, 3 GND 4, 5 GND 6, 7<br />

Analog GND<br />

GND8<br />

VFB FB1 FB2 FB3<br />

LX LX11, 12 LX21, 22 LX31, 32<br />

Table1-1: <strong>RC5T583S</strong> Pin Names<br />

©2012 Page 3


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

(4)<br />

(1)<br />

Vout<br />

Cout<br />

L<br />

(3)<br />

(2)<br />

LX<br />

(5)<br />

(5)<br />

Fig.1-2 DCDC Block Evaluation Board Pattern (Top Layer)<br />

(1) Place the parts to minimize the switching current loop (Figure 1-1: blue line, Figure 1-2: red line).<br />

(2) Route the LX line as short and wide as possible between <strong>RC5T583S</strong> and an inductor and prohibit<br />

adding other redundant lines to the LX line.<br />

(3) Connect the GND line of “Cout” directly to the internal GND plane with multiple vias, in order to reduce<br />

impedance as small as possible. (Target: 50mΩ or less)<br />

(4) Begin to route the VOUT line from near not “L” but “Cout”.<br />

(5) Place inductors for neighboring DCDC without becoming too close between them, in order to avoid the<br />

electromagnetic interference.<br />

©2012 Page 4


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

Vout<br />

Cout<br />

L<br />

VFB<br />

LX<br />

(6)<br />

Fig.1-3: DCDC Block Evaluation Board Pattern (Top Layer (Lx) + 3rd Layer (VFB))<br />

(6) Route the VFB line not to become in parallel with lines, which may be a source of noise, such as the LX<br />

line. If possible, route the VGB line at other layer.<br />

©2012 Page 5


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

(8)<br />

Analog GND<br />

(7)<br />

Buffer GND<br />

Fig.1-4: DCDC Block Evaluation Board Pattern (6th Layer)<br />

(7) Provide the ground plane for Analog-GND and Buffer-GND to the inner layer and multiple vias, in order<br />

to minimize impedance.<br />

(8) Divide Analog-GND from Buffer-GND in order to give impedance and avoid mutual interference.<br />

©2012 Page 6


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

Buffer power supply<br />

(9)<br />

Cin_B<br />

Fig.1-5: DCDC Block Evaluation Board Pattern (5th Layer (Vin_b) + Bottom Layer (Cin_b))<br />

(9) Place “Cin” as close as possible to <strong>RC5T583S</strong>. (Higher priority level is “Cin” < L < “Cout” in the close<br />

distance order with <strong>RC5T583S</strong>)<br />

In the case of the “Cin” as one example; Place “Cin” on the underside, in order to close to <strong>RC5T583S</strong>.<br />

©2012 Page 7


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

1.1.2 DCDC0 (High current type)<br />

less than 5mΩ<br />

Analog<br />

Power<br />

Supply<br />

Buffer<br />

Power<br />

Supply<br />

VIN0<br />

Cin_A<br />

FBP<br />

RCT583S<br />

Control<br />

and BUF<br />

Analog<br />

LH0<br />

LL0<br />

Cin_B1<br />

LX<br />

Cin_B2<br />

L<br />

Vout<br />

Cout<br />

RSO0<br />

FBM<br />

Analog<br />

GND<br />

Buffer<br />

GND<br />

less than 5mΩ<br />

GND0<br />

Fig.1-6: Simplified Schematic for DCDC0<br />

©2012 Page 8


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

VIN0 GND VOUT<br />

(1) (1)<br />

(2)<br />

FET<br />

(N)<br />

L<br />

FET<br />

(P)<br />

LX<br />

RSCO0<br />

Fig.1-7: Peripheral DCDC0 Evaluation Board Pattern 1 <br />

(1) Route the power supply for FET and GND at the lower resistance (<strong>RC5T583S</strong>: 5mΩ or less,<br />

Figure 1-6: Blue line).<br />

(2) Place the bypass capacitor of VIN0 for external FET as close as possible to the external FET.<br />

©2012 Page 9


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

VIN0 GND VOUT<br />

LL0<br />

L<br />

LX<br />

FBP<br />

(4)<br />

LH0<br />

(3)<br />

Fig.1-8: Peripheral DCDC0 Evaluation Board Pattern 2 <br />

(3) Route the LH0/LL0 gate signal lines to FET to become the low resistance and not to become in parallel<br />

with a source of noise, such as a LX line.<br />

In the case of the LX line as one example; Connect the Lx line to FET at the 8 th layer of the evaluation<br />

board.<br />

(4) Route the VFB (FBP) line not to become in parallel with the LX line and under the coil pattern.<br />

In the case of the VFB line as one example; Route the VFB line for a feedback from output at the 5 th layer<br />

of the evaluation board.<br />

©2012 Page 10


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

VIN0<br />

(5)<br />

Fig.1-9: Peripheral DCDC0 Evaluation Board Pattern 3 <br />

(5) Place a bypass capacitor as close as possible to the power supply pin (VIN0) for the internal buffer.<br />

©2012 Page 11


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

1.2 RTC Block<br />

XIN<br />

<strong>RC5T583S</strong><br />

XOUT<br />

Rd<br />

X'tal<br />

Rx<br />

C<br />

1<br />

C2<br />

Fig.1-10: Simplified Schematic around crystal<br />

(1)<br />

(3)<br />

(2)<br />

(4)<br />

Fig.1-11: Evaluation board pattern example. (Top Layer)<br />

©2012 Page 12


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

(1) Place the crystal unit as close as possible to the <strong>RC5T583S</strong>, the route the line on the single layer without<br />

via as short as possible, and not add a redundant line like Monitoring Line.<br />

(2) Place the input and output capacitors (C1 and C2 shown in Fig.1-11) as close as possible to the crystal<br />

unit, in order to reduce the extra parasitic resistance and capacitance.<br />

(3) Draw Land Patterns for Rx and Rd previously, because an adjustment by adding Rx and Rd is required<br />

when the using oscillator exceeds its "Drive Level" specs.<br />

(4) Connect the GND of the oscillation circuit with special GND plane on the component layer (Refer to the<br />

Fig.1-11), and then connect with the internal GND plane by via or through hole. (Refer to the Fig.1-12)<br />

Don’t route the sensitive line on the layer just under the oscillation circuit.<br />

Also, do not place GND between pads of the oscillator to prevent a parasitic resistance.<br />

(4)<br />

Fig.1-12: Evaluation board pattern example (2nd Layer)<br />

©2012 Page 13


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

2. Recommended External Parts List<br />

(*Maximum height: 3.0mm)<br />

<strong>RC5T583S</strong> External Parts<br />

Block Pin Name<br />

Parts Size [mm]<br />

Parts<br />

Model No<br />

Vender Num<br />

X Size Y Size Z Size [mm2]<br />

PMU - - <strong>RC5T583S</strong> RICOH 1 5.00 5.00 1.00 25.00<br />

VBAT 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

Power VDDIO 0.1uF C0603JB0J104K TDK 1 0.60 0.30 0.30 0.18<br />

VDDGP 0.1uF C0603JB0J104K TDK 1 0.60 0.30 0.30 0.18<br />

ADC ADCVDD 0.1uF C0603JB0J104K TDK 1 0.60 0.30 0.30 0.18<br />

VSB<br />

1kohm P-RMC1/20-102FPA KAMAYA 1 0.60 0.30 0.23 0.18<br />

1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

RTC<br />

32K X'tal Q13FC135(32.768kHz, 9pF) EPSON 1 3.20 1.50 0.90 4.80<br />

XOUT<br />

13pF Anything - 1 0.60 0.30 0.30 0.18<br />

XIN 13pF Anything - 1 0.60 0.30 0.30 0.18<br />

VIN0<br />

47uF C2012X5R0J476M TDK 2 2.00 1.20 1.25 4.80<br />

2.2uF C1608X5R1A225K TDK 1 1.60 0.80 0.80 1.28<br />

DCDC0<br />

LH0 P-MOS CSD25401Q3 TI 1 3.30 3.30 1.00 10.89<br />

LL0 N-MOS FDMA410NZ Fairchild 1 2.00 2.00 0.80 4.00<br />

FBP 2.2uH SPM6530T-2R2M TDK 1 7.10 6.50 3.00 46.15<br />

FBM 100uF AMK316ABJ107ML Taiyo Yuden 3 3.20 1.60 1.60 15.36<br />

VIN2,VIN5 22uF GRM21BB30J226ME38 Murata 1 2.00 1.25 1.25 2.50<br />

DCDC1 LX11,LX12 2.2uH LTF5022T-2R2N3R2-LC TDK 1 5.00 5.20 2.20 26.00<br />

FB1 47uF C2012X5R0J476M TDK 1 2.00 1.20 1.25 2.40<br />

VIN4 10uF GRM21BB31A106KE18 Murata 1 2.00 1.25 1.25 2.50<br />

DCDC2 LX21,LX22 2.2uH VLS252015ET-2R2M TDK 1 2.50 2.00 1.50 5.00<br />

FB2 22uF AMK107BJ226MA Taiyo Yuden 1 1.60 0.80 0.80 1.28<br />

VIN6,VIN7 22uF GRM21BB30J226ME38 Murata 1 2.00 1.25 1.25 2.50<br />

DCDC3 LX31,LX32 2.2uH VLF5014ST-2R2M2R3 TDK 1 4.80 4.60 1.40 22.08<br />

FB3 47uF C2012X5R0J476M TDK 1 2.00 1.20 1.25 2.40<br />

VIN8 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VIN9 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VIN10 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VIN11 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VO0 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VO1 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VO2 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

LDO<br />

VO3 4.7uF JMK105BBJ475MV-F Taiyo Yuden 1 1.00 0.50 0.50 0.50<br />

VO4 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VO5 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VO6 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

VO7 4.7uF JMK105BBJ475MV-F Taiyo Yuden 1 1.00 0.50 0.50 0.50<br />

VO8 4.7uF JMK105BBJ475MV-F Taiyo Yuden 1 1.00 0.50 0.50 0.50<br />

VO9 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

REG18V 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

REFO 1uF GRM155B31A105KE15 Murata 1 1.00 0.50 0.50 0.50<br />

TOTAL 189<br />

Table2-1: External Parts list<br />

©2012 Page 14


<strong>RC5T583S</strong> <strong>PCB</strong> <strong>LAYOUT</strong> <strong>GUIDE</strong><br />

<br />

Size IDC1(A) IDC2(A) DCR(mΩ) IOUTMAX<br />

Item Maker L(mm) W(mm) T(mm) S(mm2) Typ typ typ Total (A)<br />

SPM6530 TDK 7.1 6.5 3 46.15 8.4 8.2 17.3 17 9<br />

SPM4012(1.0uH)×2 TDK 4.4 4.1 1.2 36.08 6 4.1 38 76 4<br />

DCDC0 IHLP2525AHER(1.0uH+0.47u Vishay 6.47 6.86 1.8 88.77 14 7 17.5 26 11<br />

IHLP2525AHER(1.0uH)×2 Vishay 6.47 6.86 1.8 88.77 14 7 17.5 35 11<br />

IHLP2525AHER(0.47uH)×4 Vishay 6.47 6.86 1.8 177.54 18 11 8.4 34 20(AC)<br />

LTF5022T-2R2N3R2-LC TDK 5 5.2 2.2 26.00 3.2 2.4 36 36 3<br />

DCDC1 SPM4012T-2R2M TDK 4.4 4.1 1.2 18.04 4.4 2.7 82 82 3<br />

DFE252012C TOKO 2.5 2 1.2 5.00 2.7 2.3 90 90 3<br />

VLS252012MN-2R2M TDK 2.5 2 1.2 5.00 1.7 1.6 96 96 1.2<br />

DCDC2 SPM4012T-2R2M TDK 4.4 4.1 1.2 18.04 4.4 2.7 82 82 1.2<br />

DFE252012C TOKO 2.5 2 1.2 5.00 2.7 2.3 90 90 1.2<br />

VLF5014ST-2R2M2R3 TDK 4.8 4.6 1.4 22.08 3 2.3 59 59 2<br />

DCDC3 SPM4012T-2R2M TDK 4.4 4.1 1.2 18.04 4.4 2.7 82 82 2<br />

DFE252012C TOKO 2.5 2 1.2 5.00 2.7 2.3 90 90 2<br />

Table2-2: External Parts list<br />

*IDC1…-30% Reduction from Normal L Value<br />

*IDC2…self temperature rise(+40degC typ).<br />

The following are guidelines to the select the inductor.<br />

・"IDC1" is larger than Max Current(DC).<br />

・It is better that "IDC2" is over the Max Current.<br />

-> It is necessary to care the increasing temperature if load current is over IDC2.<br />

・It is better that "DCR" is small.<br />

-> In case of serial connection, the efficiency is dropping because DCR is increase.<br />

3 Parts Place Example<br />

This layout is one example of parts layout with <strong>RC5T583S</strong><br />

20.5 mm<br />

L<br />

L<br />

7 mm<br />

p-mos<br />

C<br />

C<br />

C<br />

C<br />

C<br />

C<br />

C<br />

C<br />

L<br />

C<br />

n-<br />

mos<br />

C<br />

C<br />

C<br />

C<br />

11.2 mm<br />

17.5 mm<br />

<strong>RC5T583S</strong><br />

L<br />

Xtal<br />

L<br />

3.4 mm<br />

12.1 mm<br />

5.1 mm<br />

*PKG: BGA 5.0mm×5.0mm、0.5mmpitch、81pins<br />

Fig3-1: Example of parts place<br />

©2012 Page 15

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