Semiconductor <strong>Technology</strong> Environmental "<strong>Roadmap</strong>" Rev. 0 12/98 <strong>Technology</strong> Generation 8" / 0.18um 8" / 0.15um 12" / 0.13um 12" / 0.10um 12" / 0.07um 12" / 0.05um Year 1999 2001 2003 2006 2009 2012 Increase Product Speed 1. Technical Feature (Technical Decription) - Potential Environmental Impact Area(s) 1. Interconnect (Cu metal) - PFCs, HAPs, Waste, Water, Slurry Use 1. Metal Bumps (Potential Lead ban) - Waste, Water, Energy 1. Metal Bumps (Potential Lead ban) - Waste, Water, Energy 1. Gate Dielectric (Oxynitride/Silicon Nitride) - PFCs, HAPs, VOCs, Energy 1. Gate Dielectric (alternaitve High k dielectric) - PFCs, HAPs, VOCs, Energy Increase Power Dissipation Capablility, Decrease in Power Consumption 2. Technical Feature (Technical Decription) - Potential Environmental Impact Area(s) 2. Gate Electrode (Poly/Silicide Gates) - PFCs, HAPs, VOCs, Energy, Slurry Use 2. Gate Electrode (Metal Gates) - PFCs, HAPs, VOCs, Energy, Waste, Water, Slurry Use 1. Interconnect (Advanced <strong>Technology</strong>) - ??? Increase Product Density/Capacity Decrease Electrical Defect Density 1. Resist Development (193 nm resist)- VOCs, Water 1. Resist Development (Post Optical) - VOCs, Water, Energy 2. Lithography Type (Post Optical) - Energy, VOCs Minimize Signal Loss Increase Wafer Size (300 mm) Decrease Final Cost 1. Low K ILD (SiOF) - PFCs, HAPs 1. Low K ILD (CxFy) - PFCs, HAPs 2. Low K ILD (Spin-on Polymer) - VOCs, PFCs, HAPs, Water, Waste, Slurry Use 1. Drain Extension & Contact Doping (New Process) - ??? n/a n/a 1. FOUP (cleaning) - Surfactants 2. Larger Tool Set (consumption) - PFCs, HAPs, VOCs, Water, Waste, Energy 1. Drain Extension & Contact Doping (New Process) - ??? Arlington, VA; April 2000
Five Global Challenges • Chemicals, Materials, and Equipment Management • Climate Change Mitigation • Workplace Protection • Resource Conservation • <strong>ESH</strong> Design and Measurement Methods Arlington, VA; April 2000