IV. Processes: Top-down and Bottom-up

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• Two parallel plate electrodes, one grounded and other powered by a 13.56 MHz power supply through a matching network • Used in etching (CF 4 /O 2 , CHF 3 , Cl 2 , BCl 3 ...discharges) and deposition of thin films • Pressure x distance between electrodes ≈ constant in maintaining a discharge • Note that plasma creation as well as control of ion flux/energy is achieved with only one knob for rf power
• Simple to construct • Ionization Efficiency is higher than dc, rf capactive discharges • Coil can be on top or wound on the side • The bottom electrode holding the wafer can be independently powered with a dc power supply or rf power and a machining network; plasma creation thus separated from ion flux control • The bottom electrode can be cooled or heated as necessary
Page 1 and 2: IV. Processes: Top-down and Bottom-
Page 3 and 4: • Top-down techniques take a bulk
Page 5 and 6: • Thermal evaporation - Old techn
Page 8 and 9: Plasma processes and basics
Page 10 and 11: • Discharges of gases are created
Page 12 and 13: • Thermodynamic nonequilibrium di
Page 14 and 15: Source: Plasma Etching, Manos, Flam
Page 17: * Classification is primarily based
Page 22 and 23: • Versatile process for making ce
Page 24 and 25: • Check http://www.mit.edu/tdp/ww
Page 26 and 27: • Ability to pattern non-planar/f
Page 28 and 29: • Broad nomenclature for processe

IV. Processes: Top-down and Bottom-up

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