Digital IC Design

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Address-Multiplexed Write Timing T.-C. Huang, NCUE Fall 2004 TCH NCUE Page 30
Brief Introduction to Memory Test Fault Model: 0 0 1 1 0 1 0 1 0 1 0 1 0 0 0 0 0 1 1 0 0 1 0 0 0 Basics: ⇓ w0 ⇓ r0 ⇓ w1 ⇓ r1 ⇓ ( w1r 1w0r0) Detailed in the Introduction to <strong>IC</strong> Test. T.-C. Huang, NCUE Fall 2004 TCH NCUE Page 31
Page 1 and 2: Digital IC Design Tsung-Chu Huang D
Page 3 and 4: Moore’s Law on Transistor Counts
Page 5 and 6: Moore’s Law on Memory 10 20 bits
Page 7 and 8: Taxonomy 1. by Access Structure 1.
Page 9 and 10: Basic Static RAM (SRAM) Bit Line Bi
Page 11 and 12: Amplification of SA T.-C. Huang, NC
Page 13 and 14: Basic SRAM Architecture Row/Column
Page 15 and 16: Basic SRAM Architecture An Embedded
Page 17 and 18: Related Techniques of DRAM 1. EDO:
Page 19 and 20: Write Historical Evolution of DRAM
Page 21 and 22: DRAM Cylindrical Stacked Cells T.-C
Page 23 and 24: Typical Storage Hierarchy FF Regist
Page 25 and 26: Basic Standards of Timing Diagrams
Page 27 and 28: Write Cycle T.-C. Huang, NCUE Fall
Page 29: Address-Multiplexed Read Timing T.-

Digital IC Design

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