PUBLICATIONS and TALKS of J.S. Tsai - Nec
PUBLICATIONS and TALKS of J.S. Tsai - Nec
PUBLICATIONS and TALKS of J.S. Tsai - Nec
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Japanese Patent 1889225, “A Josephson junction made <strong>of</strong> ceramic superconductor <strong>and</strong> its fabrication<br />
method”, J. S. <strong>Tsai</strong>, registered 12/7/94<br />
Japanese Patent 1891855, “A Josephson regulator”<br />
J. S. <strong>Tsai</strong>, registered 12/7/94<br />
Japanese Patent 1891856, “A Josephson regulator”<br />
J. S. <strong>Tsai</strong>, registered 12/7/94<br />
Japanese Patent 1910488, “A superconducting quantum interference gate”<br />
J. S. <strong>Tsai</strong>, registered 3/9/95<br />
Japanese Patent 1947997, “A superconducting LSI contact pad”<br />
J. S. <strong>Tsai</strong>, registered 7/10/95<br />
Japanese Patent 1948129, “An integrated circuit”<br />
J. S. <strong>Tsai</strong>, registered 7/10/95<br />
Japanese Patent 2674346, “Josephson device <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong>, registered 7/18/97<br />
Japanese Patent 2674347, “Josephson device <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong>, registered 7/18/97<br />
Japanese Patent 2732539, “A vacuum deposition device”<br />
J. S. <strong>Tsai</strong>, registered 12/26/97<br />
Japanese Patent 2743818, “Scanning Hall microscope chip <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong> <strong>and</strong> H. Lezec, registered 2/6/98<br />
Japanese Patent 2819715, “Tunnel junction <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong>, registered 8/28/98<br />
Japanese Patent 2917933, “Small tunnel junction <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong> <strong>and</strong> Y Nakamura, registered 4/23/99<br />
Japanese Patent 3164208, “Fabrication method <strong>of</strong> single electron device”<br />
J. S. <strong>Tsai</strong>, registered 3/2/01<br />
Japanese Patent 3164300, “Single electron device <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong>, registered 3/2/01<br />
Japanese Patent 3166704, “Single electron device <strong>and</strong> its fabrication method”<br />
J. S. <strong>Tsai</strong>, registered 3/9/01<br />
US Patent 6133798, “SYNCRONIZED SYSTEM”<br />
J.S <strong>Tsai</strong>, M. Nagano, registered 10/7/00<br />
US Patent 6507509B1, “NONVOLATILE MEMORY”<br />
J.S <strong>Tsai</strong>, T. Yasui, Y. Nakamura, J. Sone, Y. Ootsuka, registered 1/14/03<br />
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