PH530-23 - Admiral Microwaves Ltd

PH530-23
High Linearity InGaP HBT Amplifier
Features
Applications
Functional Diagram
800MHz - 3000MHz
19.0 dB Gain at 900MHz
+30 dBm P1dB
+45 dBm Output IP3
Single Voltage Supply
Lead-free / Green / RoHS-
compliant SOT-223 Package
Description
Mobile Infrastructure
Cellular, GSM
PCS, WCDMA, WiBro, WiMAX
W-LAN / ISM
RFID / Fixed Wireless
4
Function
1
2
3
Pin No.
RF IN 1
RF OUT / Bias 3
Ground 2,4
The PH530-23 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high
quality SOT-223 package. The device features excellent Input and output return loss, highly linear performance.
The device can be easily matchedtoobtainoptimum power and linearity. The product is targeted for use as
driver amplifier for wireless infrastructure applications. The PH530-23 operates from a single +5 voltage supply
and have an internal active bias. All devices are 100% RF and DC tested
Specifications
Symbol Parameters Units Freq. Min. Typ. Max.
S21 Gain dB
S11 Input Return Loss dB
S22 Output Return Loss dB
900 MHz
1900 MHz
2140 MHz
2550 MHz
900 MHz
1900 MHz
2140 MHz
2550 MHz
900 MHz
1900 MHz
2140 MHz
2550 MHz
19.0
13.8
13.1
11.5
-17
-17
-19
-19
-15
-18
-17
-17
P1dB
Output Power @1dB
compression
dBm
900 MHz
1900 MHz
2140 MHz
2550 MHz
30.0
30.0
29.5
28.3
OIP3
Output Third Order
intercept
dBm
900 MHz
1900 MHz
2140 MHz
2550 MHz
45
44
45
42.5
NF Noise Figure dB
900 MHz
1900 MHz
2140 MHz
2550 MHz
4.1
3.9
4.0
39
2550 MHz 3.9
V / I Device voltage / current V/mA 5/262
Rth Thermal Resistance °C/W 36
Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +9dBm/tone separated by 1MHz.
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1
January 2007

900 MHz Application Circuit
PH530-23
High Linearity InGaP HBT Amplifier
+5 V
Frequency
900 MHz
1uF
S21 : Gain
S11 : Input Return Loss
19.5 dB
-18 dB
S22 : Output Return Loss
-16 dB
100pF
Output P1dB
+30.2 dBm
RF IN
100pF
3.3nH
100nH
1.8nH
100pF
RF OUT
Output IP3 @8dBm
IS-95A Ch. Power
@ -45dBc ACPR
+45.5 dBm
+23.7 dBm
Noise Figure
4.0 dB
7.0pF
1.0pF
6.0pF
Supply Voltage
Current
5 V
262 mA
24
Gain vs. Frequency
0
Input Return Loss
0
Output Return Loss
22
+25 o C
-40 o C
+85 o C
-5
-6
Gain(dB)
20
S11(dB)
-10
-15
S22(dB)
-12
-18
18
16
800 850 900 950 1000
Frequency(MHz)
-20
+25 o C
-40 o C
+85 o C
-25
800 850 900 950 1000
Frequency(MHz)
+25 o C
-24
-40 o C
+85 o C
-30
800 850 900 950 1000
Frequency(MHz)
36
P1dB vs. Frequency
50
Output IP3 vs. Frequency
+8dBm/tone, +25 o C
48
OIP3 vs. Temperature
Freq=900MHz, +8dBm/tone
P1dB(dBm)
34
32
30
28
26
+25 o C
-40 o C
+85 o C
24
800 850 900 950 1000
OIP3(dBm)
45
40
35
+25 o C
-40 o C
+85 o C
30
800 850 900 950 1000
Frequency(MHz)
Frequency(MHz)
Temperature( o C)
OIP3(dBm)
46
44
42
40
38
-40 -20 0 20 40 60 80
6
5
Noise Figure vs. Frequency
-40
-45
ACPR IS-95A vs. Channel Power
IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset
freq=900MHz
NF(dB)
4
3
2
1
800 850 900 950 1000
Frequency(MHz)
+25 o C
ACPR(dBc)
-50
-55
-60
-65
-70
10 12 14 16 18 20 22 24 26
Output Channel Power(dBm)
2
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January 2007

1900 MHz Application Circuit
PH530-23
High Linearity InGaP HBT Amplifier
+5 V
Frequency
1900 MHz
1uF
S21 : Gain
S11 : Input Return Loss
14.0 dB
-18 dB
S22 : Output Return Loss
-20 dB
20pF
Output P1dB
+30.2 dBm
RF IN
20pF
1.8pF
22nH
50Ω/4mm
20pF
RF OUT
Output IP3 @9dBm
IS-95A Ch. Power
@ -45dBc ACPR
+44.5 dBm
+23.9 dBm
Noise Figure
3.8 dB
1.5pF
2.2pF
Supply Voltage
5 V
Current
262 mA
18
Gain vs. Frequency
0
Input Return Loss
0
Output Return Loss
16
-5
+25 o C
-40 o C
+85 o C
-6
Gain(dB)
14
12
10
+25 o C
-40 o C
+85 o C
8
1800 1850 1900 1950 2000
Frequency(MHz)
S11(dB)
-10
-15
-20
-25
1800 1850 1900 1950 2000
Frequency(MHz)
S22(dB)
-12
-18
-24
+25 o C
-40 o C
+85 o C
-30
1800 1850 1900 1950 2000
Frequency(MHz)
36
P1dB vs. Frequency
50
Output IP3 vs. Frequency
+9dBm/tone, +25 o C
50
OIP3 vs. Temperature
Freq=1900MHz, +9dBm/tone
34
48
P1dB(dBm)
32
30
28
+25 o C
26
-40 o C
+85 o C
24
1800 1850 1900 1950 2000
OIP3(dBm)
35
1800 1850 1900 1950 2000
Frequency(MHz)
Frequency(MHz)
45
40
+25 o C
-40 o C
+85 o C
OIP3(dBm)
46
44
42
40
-40 -20 0 20 40 60 80
Temperature( p ( o C) )
6
5
Noise Figure vs. Frequency
-40
-45
ACPR IS-95A vs. Channel Power
IS-95, 9 Ch. Forward, 30 kHz Meas BW, 885 kHz offset
freq=1.9GHz
NF(dB)
4
3
ACPR(dBc)
-50
-55
-60
2
1
1800 1850 1900 1950 2000
Frequency(MHz)
+25 o C
-65
-70
12 14 16 18 20 22 24 26
Output Channel Power(dBm)
3
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January 2007

2140 MHz Application Circuit
PH530-23
High Linearity InGaP HBT Amplifier
+5 V
Frequency
2140 MHz
1uF
S21 : Gain
S11 : Input Return Loss
13.3 dB
-20 dB
S22 : Output Return Loss
-18 dB
20pF
Output P1dB
+29.8 dBm
RF IN
20pF
1.0pF
22nH
50Ω/4mm
20pF
RF OUT
Output IP3 @9dBm
WCDMA Ch. Power
@ -45dBc ACLR
+45.5 dBm
+21.3 dBm
Noise Figure
3.9 dB
1.0pF
1.8pF
Supply Voltage
Current
5 V
262 mA
18
Gain vs. Frequency
0
Input Return Loss
0
Output Return Loss
16
-5
-6
Gain(dB)
14
12
S11(dB)
-10
-15
S22(dB)
-12
-18
10
+25 o C
-40 o C
+85 o C
8
2050 2100 2150 2200 2250
-20
+25 o C
-40 o C
+85 o C
-25
2050 2100 2150 2200 2250
+25 o C
-24
-40 o C
+85 o C
-30
2050 2100 2150 2200 2250
Frequency(MHz)
Frequency(MHz)
Frequency(MHz)
36
P1dB vs. Frequency
50
Output IP3 vs. Frequency
+9dBm/tone, +25 o C
50
OIP3 vs. Temperature
Freq=2140MHz, +9dBm/tone
34
48
P1dB(dBm)
32
30
28
+25 o C
26
-40 o C
+85 o C
24
2050 2100 2150 2200 2250
OIP3(dBm)
45
40
+25 o C
-40 o C
+85 o C
35
2050 2100 2150 2200 2250
40
-40 -20 0 20 40 60 80
Frequency(MHz)
Frequency(MHz)
Temperature( o C)
OIP3(dBm)
46
44
42
6
Noise Figure vs. Frequency
-35
W-CDMA ACLR vs. Channel Power
3GPP W-CDMA, Test Model1 + 64DPCH, 5MHz offset
freq=2.14GHz
5
-40
NF(dB)
4
3
ACLR(dBc)
-45
-50
2
-55
1
2050 2100 2150 2200 2250
Frequency(MHz)
+25 o C
-60
12 14 16 18 20 22 24
Output Channel Power(dBm)
4
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January 2007

2350 MHz Application Circuit
PH530-23
High Linearity InGaP HBT Amplifier
+5 V
1uF
Frequency
S21 : Gain
2350 MHz
11.4 dB
S11 : Input Return Loss
-17 dB
RF IN
20pF
0.75pF
22nH
20pF
50Ω/4mm
20pF
RF OUT
S22 : Output Return Loss -17 dB
Output t P1dB
+29.4 dBm
Output IP3 @9dBm
+43.5 dBm
Noise Figure
3.9 dB
Supply Voltage
5 V
0.75pF
1.5pF
Current
262 mA
16
Gain vs. Frequency
0
Input Return Loss
0
Output Return Loss
14
-5
-6
Gain(dB)
12
10
S11(dB)
-10
-15
S22(dB)
-12
-18
8
+25 o C
-40 o C
+85 o C
6
2250 2300 2350 2400 2450
-20
+25 o C
-40 o C
+85 o C
-25
2250 2300 2350 2400 2450
+25 o C
-24
-40 o C
+85 o C
-30
2250 2300 2350 2400 2450
Frequency(MHz)
Frequency(MHz)
Frequency(MHz)
34
P1dB vs. Frequency
6
Noise Figure vs. Frequency
32
5
P1dB(dBm)
30
28
26
24
22
2200 2250 2300 2350 2400 2450 2500
Frequency(MHz)
+25 o C
-40 o C
+85 o C
NF(dB)
4
3
2
1
2250 2300 2350 2400 2450
Frequency(MHz)
+25 o C
50
Output IP3 vs. Frequency
+9dBm/tone, +25 o C
46
OIP3 vs. Temperature
Freq=2350MHz, +9dBm/tone
OIP3(dBm)
45
40
+25 o C
-40 o C
+85 o C
35
2250 2300 2350 2400 2450
Frequency(MHz)
OIP3(dBm)
44
42
40
38
-40 -20 0 20 40 60 80
Temperature( o C)
5
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January 2007

2550 MHz Application Circuit
PH530-23
High Linearity InGaP HBT Amplifier
+5 V
1uF
Frequency
S21 : Gain
2550 MHz
11.6 dB
S11 : Input Return Loss
-25 dB
RF IN
20pF
0.5pF
22nH
20pF
1.0nH
20pF
RF OUT
S22 : Output Return Loss -18 dB
Output t P1dB
+28.3 dBm
Output IP3 @9dBm
+43.0 dBm
Noise Figure
3.8 dB
Supply Voltage
5 V
0.5pF
1.2pF
Current
262 mA
16
Gain vs. Frequency
0
Input Return Loss
0
Output Return Loss
14
-10
-6
Gain(dB)
12
10
S11(dB)
-20
S22(dB)
-12
-18
8
+25 o C
-40 o C
+85 o C
6
2450 2500 2550 2600 2650
Frequency(MHz)
-30
+25 o C
-40 o C
+85 o C
-40
2450 2500 2550 2600 2650
Frequency(MHz)
+25 o C
-24
-40 o C
+85 o C
-30
2450 2500 2550 2600 2650
Frequency(MHz)
34
P1dB vs. Frequency
6
Noise Figure vs. Frequency
32
5
P1dB(dBm)
30
28
26
+25 o C
24
-40 o C
+85 o C
22
2450 2500 2550 2600 2650
NF(dB)
4
3
2
+25 o C
1
2450 2500 2550 2600 2650
Frequency(MHz)
Frequency(MHz)
50
Output IP3 vs. Frequency
+9dBm/tone, +25 o C
46
OIP3 vs. Temperature
Freq=2550MHz, +9dBm/tone
45
44
OIP3(dBm)
40
OIP3(dBm)
42
35
+25 o C
-40 o C
+85 o C
40
30
2450 2500 2550 2600 2650
38
-40 -20 0 20 40 60 80
Frequency(MHz)
Temperature( o C)
6
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January 2007

Absolute Maximum Ratings
PH530-23
High Linearity InGaP HBT Amplifier
Parameter Rating Unit
Device Voltage +6 V
Device Current 370 mA
RF Power Input 20 dBm
Storage Temperature -55 to +125 °C
Ambient Operating Temperature -40 to +85 °C
Junction Temperature 180 °C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-223 Package Outline
Land Pattern
ESD / MSL Ratings
11.0
7.5
1. ESD sensitive device.
Observe Handling Precautions.
Package
Outline
Plated Thru
Ground Vias
2.0
4.9
4.5
5.4
2.3
2. ESD Rating : Class 1C(Passes at 1000V min.)
Human Body Model (HBM), JESD22-A114
3. ESD Rating : Class IV (Passes at 1000V min.)
Charged Device Model (CDM), JESD22-C101
4. MSL (Moisture Sensitive Level) Rating : Level 3
at +260°C Convection reflow, J-STD-020
Evaluation Board Layout (4x4)
R .6
Mounting Instructions
7
1. Use a large ground pad area with many plated
through-holes as shown.
2. We recommend 1 oz copper minimum.
3. Measurement for our data sheet was made on
0.8mm thick FR-4 Board.
4. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
5. RF trace width depends on the board material and
construction.
6. Add mounting screws near the part to fasten the
board to a heatsink.
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January 2007