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<strong>Per<strong>for</strong>ated</strong> <strong>Semiconductor</strong> <strong>Neutron</strong> <strong>Detector</strong> <strong>Modules</strong> <strong>for</strong><br />

<strong>Detection</strong> <strong>of</strong> Spontaneous Fission <strong>Neutron</strong>s<br />

Douglas S. McGregor, Steven L. Bellinger, David Bruno, Shawn Cowley,<br />

Melanie Elazegui, Walter J. McNeil, Eric Patterson, Troy Unruh<br />

SMART Laboratories, Mechanical and Nuclear Engineering, Kansas State University,<br />

Manhattan, KS 66506<br />

Ph: 785-532-5284, Email: mcgregor@ksu.edu<br />

Clell J. Solomon, J. Kenneth Shultis<br />

Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506<br />

Blake B. Rice<br />

Nuclear Regulatory Commission, Rockville, MD 20852<br />

Abstract— Compact neutron detectors are being<br />

designed and tested <strong>for</strong> use as low-power real-time<br />

personnel dosimeters and <strong>for</strong> remote neutron sensing. The<br />

neutron detectors are pin diodes that are mass produced<br />

from high-purity Si wafers. Each detector has thousands <strong>of</strong><br />

circular per<strong>for</strong>ations etched vertically into the device. The<br />

per<strong>for</strong>ations are backfilled with 6 LiF to make the pin diodes<br />

sensitive to thermal neutrons. The prototype devices<br />

delivered over 3.8% thermal neutron detection efficiency<br />

while operating on only 15 volts. The highest efficiency<br />

devices thus far have delivered over 12% thermal neutron<br />

detection efficiency. Devices moderated with high density<br />

polyethylene (HDPE) can be used <strong>for</strong> fast neutron detection.<br />

Compact packages with or without remote readout<br />

electronics are under construction and characterization.<br />

C<br />

I. INTRODUCTION<br />

OATED semiconductor diodes have been studied as<br />

neutron detectors <strong>for</strong> many decades [1]. The basic<br />

configuration consists <strong>of</strong> a common Schottky barrier or pn<br />

junction diode, upon which a neutron reactive coating, such<br />

as 10 B or 6 LiF, has been applied. Such devices are compact,<br />

easily produced, and have low power requirements.<br />

However, they are restricted to low thermal neutron<br />

detection efficiencies, typically no greater than 4.5%<br />

intrinsic efficiency, due to reaction product energy selfabsorption<br />

in the neutron sensitive coating [2].<br />

In the present work, the coating is based on the 6 Li(n,t) 4 He<br />

reaction. When thermal neutrons are absorbed in 6 Li, a 2.73<br />

MeV triton and a 2.05 MeV alpha particle are ejected in<br />

opposite directions. The reaction products from the<br />

6 Li(n,t) 4 He reaction are more energetic than those <strong>of</strong> the<br />

10 B(n,α) 7 Li or 157 Gd(n,γ) 158 Gd reactions and, hence, are<br />

much easier to detect and discriminate from background<br />

radiations.<br />

6 Li has a relatively large microscopic thermal<br />

neutron absorption cross section <strong>of</strong> 940 b, although it is less<br />

than 157 Gd and 10 B. The absorption cross section <strong>for</strong> 6 Li<br />

follows a 1/v dependence [3,4]. Although devices have been<br />

fabricated with enriched 6 Li metal as the converter film [2],<br />

pure Li is highly reactive and difficult to prevent from<br />

decomposing, even when using encapsulates. It is the stable<br />

compound LiF that is used more <strong>of</strong>ten. The mass density <strong>of</strong><br />

6 LiF is 2.54 g cm -3 , and the resulting macroscopic thermal<br />

neutron absorption cross section is 57.5 cm -1 .<br />

The advantages <strong>of</strong> coated diodes as neutron detectors<br />

include compact size, a low power requirement, low cost<br />

VLSI mass production methodology, and ruggedness. Yet,<br />

since basic planar thin-film coated diode detectors can only<br />

achieve practical maximum thermal neutron detection<br />

efficiencies <strong>of</strong> approximately 4.5% [2], they have<br />

experienced only modest utilization as neutron radiation<br />

detectors.<br />

Recent advances with inductively-coupled-plasma reactiveion-etching<br />

(ICP-RIE) using high-aspect ratio deep etching<br />

(HARDE) techniques have allowed <strong>for</strong> unique per<strong>for</strong>ated<br />

neutron detector structures to be realized [6]. In such a<br />

configuration, the diode is permeated with per<strong>for</strong>ations<br />

which are backfilled with neutron reactive materials, such as<br />

10 B and 6 LiF [6]. As a result, the intrinsic thermal neutron<br />

detection efficiencies <strong>of</strong> per<strong>for</strong>ated diodes can be increased<br />

above 30%, more than 6 times that <strong>of</strong> a common planar thin<br />

film coated diode [7]. It was shown in previous work that<br />

per<strong>for</strong>ated devices incorporating 6 LiF as the converter can<br />

achieve higher intrinsic thermal neutron detection<br />

efficiencies than devices with 10 B as the converter [6].


Figure 1 - Per<strong>for</strong>ations are etched into the Si substrate with<br />

ICP-RIE. Shown are holes etched into Si, each 30 microns<br />

in diameter and 20 microns deep on a center-to-center pitch<br />

<strong>of</strong> 60 microns. A protective oxide has been grown in and<br />

around the perimeter <strong>of</strong> the holes.<br />

Figure 2 - 30 µm diameter and 100 µm deep per<strong>for</strong>ations in<br />

Si that have been completely backfilled with 6 LiF by using<br />

the low pressure condensation method.<br />

Figure 3 - The fabrication process developed to produce<br />

the per<strong>for</strong>ated detectors was designed <strong>for</strong> mass<br />

production.<br />

(Fig. 1). The hole pitch is 60 microns center-to-center. The<br />

active area <strong>of</strong> the detector is 25 mm 2 with the device<br />

diameter being 5.6 mm and die dimensions being 7 mm x 7<br />

mm. The per<strong>for</strong>ations in the first generation devices were<br />

backfilled by low pressure condensation deposition [8]. The<br />

wafer and 6 LiF powder are placed inside a vacuum furnace.<br />

The per<strong>for</strong>ated substrate is mounted to a cold plate inside<br />

the vacuum furnace. The 6 LiF powder is evaporated and<br />

transported with a carrier gas to the per<strong>for</strong>ated substrate<br />

where it condenses inside the miniature per<strong>for</strong>ations (Fig. 2).<br />

Presently, over 60 detectors can be produced per 3 inch<br />

diameter wafer, as shown in Fig. 3. The details <strong>of</strong> the<br />

detector processing steps can be found elsewhere [6,8].<br />

Basic Module Design<br />

First-generation per<strong>for</strong>ated detectors were coupled to a<br />

simple counting system with a low cost, low power, and a<br />

small transimpedance and gain amplifier combination. The<br />

amplifiers and a detection diode are located in a sealed 4 pin<br />

Hence, <strong>of</strong> the three main materials commonly used <strong>for</strong> thinfilm<br />

coated thermal neutron detectors, the following work<br />

concentrates only on devices constructed with 6 LiF as the<br />

converter material.<br />

<strong>Detector</strong> Dimensions<br />

II. DETECTOR DESIGN<br />

The per<strong>for</strong>ated detectors were produced as Si pin diodes.<br />

The diode fabrication processes were carried out on 3-inch<br />

diameter float zone, double-side polished, >5 kΩ-cm, n-type<br />

Si wafers approximately 325 µm thick. The devices have 30<br />

micron diameter holes that are typically between 20 to 100<br />

microns deep. The devices have an insulating coating inside<br />

the holes to reduce problems <strong>of</strong> excessive leakage current<br />

Figure 4 - Shown is a 6 LiF filled and coated per<strong>for</strong>ated<br />

detector, with a total active diameter <strong>of</strong> 5.6 mm, mounted<br />

alongside the preamplifier/amplifier circuit.


pin crystal carrier <strong>for</strong> noise isolation.<br />

Figure 5 - The per<strong>for</strong>ated detectors operate on minimal<br />

voltage. Shown are the internal parts to the module, with<br />

the detector, preamplifier/amplifier, power supply and<br />

digital display. The entire package is powered by 3 AAA<br />

batteries.<br />

(14 pin footprint) package widely used in the manufacture <strong>of</strong><br />

crystal oscillators (Fig. 4). The wire bonds between the<br />

diode and the transimpedance amplifier are also potted in an<br />

electronics grade epoxy to ensure stability. Once packaged,<br />

the detector plat<strong>for</strong>m is well shielded from external light,<br />

electrical noise, and humidity. The detector module (Fig. 5)<br />

supplies power <strong>for</strong> the amplifier and per<strong>for</strong>ated detector bias<br />

(nominally around 15 volts), and returns a positive polarity<br />

pulse output from neutron interactions between 70 and 130<br />

mV with a pulse width <strong>of</strong> approximately 4 µs (depending on<br />

the individual diode). The module requires an operating<br />

voltage between 2.7 to 5 volts at 150 µA. The module bias<br />

supply uses a charge pump circuit with an external<br />

adjustment potentiometer to supply between 10 and 20 volts<br />

<strong>of</strong> positive detector bias. It is based on a LT1615-1 DC/DC<br />

step up converter. The bias supply is also contained in a 4<br />

Pulse Width (µs)<br />

6.5<br />

6.0<br />

5.5<br />

5.0<br />

4.5<br />

4.0<br />

3.5<br />

90<br />

0 5 10 15 20<br />

Bias Voltage (volts)<br />

Pulse Width<br />

Pulse Height<br />

140<br />

130<br />

120<br />

110<br />

100<br />

Pulse Height (mV)<br />

Figure 6 - <strong>Detector</strong> output pulses as a function <strong>of</strong> applied<br />

bias. The pulse height reaches a maximum at 10 volts<br />

reverse bias, whereas the pulse width continues to decrease<br />

beyond 18 volts reverse bias.<br />

Pulses exiting the amplifier circuit are converted into a<br />

logic-level pulse <strong>for</strong> the counting circuits. An adjustable<br />

voltage level is set with a potentiometer and connected to<br />

the negative input <strong>of</strong> a low power comparator. The pulse is<br />

connected to the non-inverting input <strong>of</strong> the comparator with<br />

an r/c filter to remove a small dc <strong>of</strong>fset introduced by the<br />

amplification stage. This allows the device to “discriminate”<br />

pulse heights, as well as filter out spurious noise. The<br />

prototype arrangement operates on 3 AAA cell batteries (4.5<br />

volts), and uses a low power commercial counter to display<br />

neutron induced counts. The unit is constructed using<br />

surface mount components and techniques, and is housed in<br />

an aluminum box. Module testing was initially per<strong>for</strong>med<br />

with an 241 Am alpha-particle source. The aluminum housing<br />

has a hole drilled above the per<strong>for</strong>ated detector covered by<br />

an aluminized mylar window. The hole allows <strong>for</strong> the 5.5<br />

MeV alpha particles to enter the detector and produce<br />

pulses.<br />

The device modules were tested with an 241 Am alpha<br />

particle source <strong>for</strong> pulse width and pulse height as a function<br />

<strong>of</strong> bias voltage. The pulse widths, on average, leveled <strong>of</strong>f at<br />

approximately 3.7 µs beyond 15 volts bias. The pulse height<br />

leveled <strong>of</strong>f in magnitude at approximately 130 mV <strong>for</strong><br />

voltages exceeding 10 volts bias (Fig. 6). Since the depletion<br />

region need extend only beyond the holes to produce full<br />

charge collection, the voltage needed <strong>for</strong> optimum operation<br />

is actually less than needed <strong>for</strong> full depletion, observed to be<br />

35 volts from CV measurements.<br />

III. NEUTRON MEASUREMENTS<br />

The devices were tested in a tangential thermal beamport at<br />

the Kansas State University TRIGA Mark II Nuclear<br />

Reactor Facility. Each detector was tested in the same<br />

electronics box under identical conditions. The electronics<br />

box and detector were aligned in the beam port using an<br />

indexing holder. A thin film coated calibration detector,<br />

which had a coating <strong>of</strong> only 1400 angstroms <strong>of</strong> 95%<br />

enriched 6 LiF, was used to determine the average thermal<br />

flux at a reactor power <strong>of</strong> 225 kW, which yielded an average<br />

calibration flux unit <strong>of</strong> 1.1 n cm -2 s -1 W -1 ± 0.75%. Hence, at<br />

a reactor power <strong>of</strong> 200 W, the average slow flux at the<br />

indexed detector test location was 220 ± 1.65 n cm -2 s -1 as<br />

compared to the calibration detector.<br />

Figure 7 shows a calculated efficiency <strong>for</strong> a per<strong>for</strong>ated diode<br />

with 30 microns diameter 20 micron deep holes backfilled<br />

with 6 LiF. The spectral features and predicted efficiency<br />

were determined using the model described in the literature<br />

[7]. Distinct features include the 2.73 MeV single particle<br />

limit (from the triton) and the dual particle continuum,


Relative Counts Tallied<br />

10 5 2.73 MeV limit<br />

10 4<br />

10 3<br />

10 2<br />

10 1<br />

2.05 MeV limit<br />

Monte Carlo simulation<br />

Hole diameters = 30 microns<br />

Hole depths = 20 microns<br />

Hole pitch = 60 microns<br />

Cap thickness = 10 microns<br />

10 7 histories<br />

Maximum efficiency = 3.59%<br />

dual particle<br />

continuum<br />

0 1 2 3 4 5<br />

Energy Deposited (MeV)<br />

Recorded Counts<br />

10 5 2.73 MeV limit<br />

10 4<br />

10 3<br />

10 2<br />

10 1<br />

lower level<br />

discriminator<br />

limit<br />

0 1 2 3 4 5<br />

Scaled Energy (MeV)<br />

dual particle<br />

continuum<br />

Hole diameters = 30 microns<br />

Hole depths = 20 microns<br />

Hole pitch = 60 microns<br />

Cap thickness = 10 microns<br />

Efficiency = 3.8%<br />

pulse<br />

pileup<br />

Figure 7 - Calculated efficiency and spectral features <strong>for</strong><br />

a per<strong>for</strong>ated detector with 30 µm diameter 20 µm deep<br />

holes filled with 6 LiF.<br />

which will appear only if the per<strong>for</strong>ated device is<br />

functioning properly. By comparison, Fig. 8 shows a<br />

spectrum <strong>for</strong> a per<strong>for</strong>ated device with 30 micron diameter<br />

and 20 micron deep holes backfilled with 6 LiF. The<br />

measured thermal neutron detection efficiency was 3.8%,<br />

which compares well to the modeled result. Further, the 2.73<br />

Figure 8 - Measured efficiency and spectral features <strong>for</strong> a<br />

per<strong>for</strong>ated detector with 30 µm diameter 20 µm deep<br />

holes filled with 6 LiF.<br />

MeV single particle limit and the dual particle continuum<br />

are clearly present. Devices with holes 100 microns deep<br />

have yielded efficiencies above 12.5%.<br />

It is anticipated that the neutron detectors can be used <strong>for</strong><br />

fast neutron detection <strong>for</strong> remote sensing. In such a case, the<br />

modules can be packaged in high density polyethylene<br />

(HDPE) to scatter fast neutrons down to slow energies<br />

where the per<strong>for</strong>ated detectors have higher detection<br />

efficiency. A device <strong>of</strong> this sort can be stationed in locations<br />

capable <strong>of</strong> accumulating counts from a fast neutron source<br />

over a long period <strong>of</strong> time.<br />

Figure 9 shows a prototype per<strong>for</strong>ated neutron detector<br />

plat<strong>for</strong>m inserted between two HDPE disks, each being 2<br />

inches in diameter and two inches thick. The entire device is<br />

approximately the same size <strong>of</strong> a common 12 oz beverage<br />

can. The preamplifier, amplifier and charge pump are<br />

installed in the base <strong>of</strong> the HDPE moderator. Figure 10<br />

shows the response to fast neutrons from a 252 Cf source at<br />

distances ranging from 0.5 m to 2 m. The detector in the<br />

package was a low thermal neutron detection efficiency<br />

(2%) per<strong>for</strong>ated diode. There is a noticeable difference in<br />

the count rates as a function <strong>of</strong> HDPE cylinder orientation<br />

<strong>for</strong> detector to source distances less than 2 m. Higher count<br />

rates were observed with the HDPE cylinder oriented<br />

perpendicular to the neutron source as opposed to parallel.<br />

IV. REMOTE CAPABILITY<br />

Figure 9 - <strong>Per<strong>for</strong>ated</strong> detectors with miniature<br />

preamplifiers packaged in high density polyethylene<br />

(HDPE).<br />

The detector packages are being outfitted with commercial<br />

radio transmitter technology <strong>for</strong> remote applications. The<br />

wireless detector network is constructed <strong>of</strong> two major<br />

pieces. The first and most important piece is the detector<br />

board. The second piece is the wireless communications<br />

module.


8000<br />

7000<br />

Perpendicular<br />

Parallel<br />

Counts per Hour<br />

6000<br />

5000<br />

4000<br />

3000<br />

2000<br />

1000<br />

0<br />

60 80 100 120 140 160 180 200<br />

Distance from Source(cm)<br />

Figure 10 - Count rate <strong>of</strong> a 2% efficient per<strong>for</strong>ated<br />

semiconductor neutron detector packaged in high density<br />

polyethylene (HDPE) as a function <strong>of</strong> distance from a<br />

252 Cf source.<br />

The remote detector board combines three basic components<br />

needed to detect a neutron, as with the basic module, those<br />

being signal generation, bias supply, and digital converter.<br />

The same detector plat<strong>for</strong>m as shown in Fig. 4 is used. The<br />

bias supply is a simple adjustable capacitor charge pump. It<br />

is also contained within a crystal oscillator package, but it<br />

requires an external inductor to reduce power supply noise.<br />

After a neutron is detected, the pulse is passed through a<br />

high pass filter to remove any dc <strong>of</strong>fsets. Then the pulse is<br />

converted to a digital signal using a simple comparator<br />

circuit. The resulting digital pulse is connected to an<br />

interrupt line on the wireless module via a 51 pin connector<br />

on the underside <strong>of</strong> the detector board.<br />

The wireless module chosen <strong>for</strong> this prototype is<br />

manufactured by Crossbow, named a MICAz. This module<br />

con<strong>for</strong>ms to the new IEEE 802.15.4 ZigBee standard <strong>for</strong> low<br />

power wireless sensor networks, and operates in the 2.4<br />

GHz band. Some attractive features <strong>of</strong> ZigBee networks are<br />

low power requirements, large network sizes, and small<br />

processing and memory requirements. A full discussion <strong>of</strong><br />

the ZigBee protocol can be found elsewhere [9].<br />

One <strong>of</strong> the more attractive features <strong>of</strong> the ZigBee protocol is<br />

the mesh network. Any module or “mote” can act as a router<br />

or base station. As long as any individual mote is within<br />

range <strong>of</strong> another mote, messages can be chained back to the<br />

base station. According to the datasheet <strong>for</strong> the MICAz<br />

series <strong>of</strong> motes [10], the outdoor range is 75 – 100 m, and<br />

the indoor range is from 20 – 30 m, assuming a ½ wave<br />

dipole antenna and line <strong>of</strong> sight (<strong>for</strong> outdoor range). The<br />

lower frequency (900, 430 and 315MHz) MICA2 modules<br />

extend outdoor range to around 300 m. The combined<br />

detector board and remote transmitter is shown in Fig. 11.<br />

Figure 11 – <strong>Detector</strong> board, with the detector package<br />

and charge pump, mounted atop the remote transmitter<br />

module and battery package.<br />

Another attraction <strong>of</strong> the MICAz mote is the built in<br />

Atmega128 processor. The processor allows pulse counting<br />

from each detector, in which the counts are transmitted to a<br />

base computer via the mesh network. The Atmega128<br />

processor also has a built in A/D converter <strong>for</strong> future<br />

applications. The simple s<strong>of</strong>tware <strong>for</strong> the detector system<br />

utilizes an interrupt vector <strong>for</strong> the external interrupt pin to a<br />

subroutine which increments a counter. The mote sends the<br />

accumulated count back to the base station in regular<br />

intervals. If a large number <strong>of</strong> events are counted be<strong>for</strong>e the<br />

timed communication interval, the mote will report back to<br />

the base.<br />

V. CONCLUSIONS<br />

Si-based per<strong>for</strong>ated diode detectors have been fabricated<br />

and demonstrated in compact low-power packages. The<br />

shallow hole device yielded 3.8% thermal neutron detection<br />

efficiency. Future generation devices will be constructed<br />

from diodes with much deeper per<strong>for</strong>ations and a tighter<br />

per<strong>for</strong>ation matrix. Both changes will increase the intrinsic<br />

thermal neutron detection efficiency, with calculations and<br />

models indicating that efficiencies above 30% can be<br />

reached [7].<br />

We plan on extending our existing plat<strong>for</strong>m to include three<br />

detectors – one fast neutron, one thermal neutron, and a<br />

gamma ray detector (most likely CZT). The two neutron<br />

detectors are simple to interface to the processor since they<br />

only produce pulses. The gamma ray detector also provides<br />

pulses, but the pulse height in<strong>for</strong>mation will need to be<br />

stored as well. We can accomplish this by using a sample<br />

and hold circuit along with a discriminator circuit like those<br />

used in the neutron detectors. Once a pulse is detected, the<br />

sample and hold circuit will capture the peak voltage and the<br />

microprocessor will convert the peak into a number. The


number will be used as an index to an array that will be<br />

incremented each time a pulse <strong>of</strong> that specific height is<br />

detected.<br />

VI. ACKNOWLEDGEMENTS<br />

This work was supported under DTRA contract DTRA-01-<br />

03-C-0051, National Science Foundation IMR-MIP grant<br />

No. 0412208, and US Department <strong>of</strong> Energy NEER Grant<br />

DE-FG07-04ID14599.<br />

VII. REFERENCES<br />

[1] <strong>Neutron</strong> <strong>Detector</strong>s, International Atomic Energy<br />

Agency, Bibliographical Series, No. 18, Vienna, 1966.<br />

[2] D.S. McGregor, M.D. Hammig, H.K. Gersch, Y-H.<br />

Yang, and R.T. Klann, “Design Considerations <strong>for</strong><br />

Thin Film Coated <strong>Semiconductor</strong> Thermal <strong>Neutron</strong><br />

<strong>Detector</strong>s, Part I: Basics Regarding Alpha Particle<br />

Emitting <strong>Neutron</strong> Reactive Films,” Nuclear Instruments<br />

and Methods A500, 272-308, 2003.<br />

[3] D.I. Garber, R.R. Kinsey, BNL 325: <strong>Neutron</strong> Cross<br />

Sections, 3rd ed., Vol. 2, Curves, Brookhaven National<br />

Laboratory, Upton, 1976.<br />

[4] V. McLane, C.L. Dun<strong>for</strong>d, P.F. Rose, in: <strong>Neutron</strong><br />

Cross Sections, Vol.2, Academic Press, San Diego,<br />

1988.<br />

[5] D.S. McGregor, R.T. Klann, H.K. Gersch, E. Ariesanti,<br />

J.D. Sanders, and B. Van Der Elzen, “New Surface<br />

Morphology <strong>for</strong> Low Stress Thin-Film-Coated Thermal-<br />

<strong>Neutron</strong> <strong>Detector</strong>s,” IEEE Trans. Nuclear Science 49,<br />

1999-2004, 2002.<br />

[6] D.S. McGregor, S. Bellinger, D. Bruno, W. Dunn, W.J.<br />

McNeil, E. Patterson, B.B. Rice, J.K. Shultis,<br />

“<strong>Per<strong>for</strong>ated</strong> Diode <strong>Neutron</strong> <strong>Detector</strong> <strong>Modules</strong><br />

Fabricated from High-Purity Silicon,” Radiation<br />

Physics and Chemistry, 2007, in press.<br />

[7] J.K. Shultis and D.S. McGregor, “Efficiencies <strong>of</strong><br />

Coated and <strong>Per<strong>for</strong>ated</strong> <strong>Semiconductor</strong> <strong>Neutron</strong><br />

<strong>Detector</strong>s,” IEEE Trans. Nuclear Science NS-53,<br />

1659-1665, 2006.<br />

[8] D.S. McGregor, S. Bellinger, W.J. McNeil, E.<br />

Patterson, B.B. Rice, J.K. Shultis, “Non-Streaming<br />

High-Efficiency <strong>Per<strong>for</strong>ated</strong> <strong>Semiconductor</strong> <strong>Neutron</strong><br />

<strong>Detector</strong>s, Methods <strong>of</strong> Making Same and Measuring<br />

Wand Utilizing Same, US patent pending, 2007.<br />

[9] www.zigbee.com, March, 2007.<br />

[10] www.xbow.com/Products/Product_pdf_files/Wireless_p<br />

df/MICAz_Datasheet.pdf, March, 2007.

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