CM150DU-12H

MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM150DU-12H
● IC ...................................................................150A
● VCES ..........................................................600V
● Insulated Type
● 2-elements in a pack
APPLICATION
UPS, NC machine, AC-Drive control, Servo, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
7
17 23
94
80 ±0.25
23
TC measured point
2–φ6.5
MOUNTING HOLES
4
48
24
CM
C2E1
E2
C1
G1E1 E2 G2
11
4
4 18
13
3–M5NUTS
12mm deep
12 13.5
16 2.5 25 2.5 16
TAB
#110. t=0.5
G2
E2
30 +1
–0.5
LABEL
21.2 7.5
C2E1 E2 C1
CIRCUIT DIAGRAM
G1 E1
Feb. 2009
1

MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol Item Conditions Ratings
Unit
VCES
VGES
IC
ICM
IE (Note 2)
IEM (Note 2)
PC (Note 3)
Tj
Tstg
Viso
—
—
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
VGE = 0V
VCE = 0V
TC = 25°C
Pulse (Note 1)
TC = 25°C
Pulse (Note 1)
TC = 25°C
—
—
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
600
±20
150
300
150
300
600
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
V
V
A
A
A
A
W
°C
°C
Vrms
N·m
N·m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
Symbol Item Test Conditions
VGE(th)
VCE(sat)
VEC(Note 2)
trr (Note 2)
Qrr (Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance (Note 5)
Contact thermal resistance
VCE = VCES, VGE = 0V
IC = 15mA, VCE = 10V
±VGE = VGES, VCE = 0V
IC = 150A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 150A, VGE = 15V
VCC = 300V, IC = 150A
VGE = ±15V
RG = 4.2Ω
Resistive load
IE = 150A, VGE = 0V
IE = 150A,
die / dt = –300A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to heat sink, conductive grease applied
(Per 1/2 module) (Note 6)
Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.
6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Min Typ Max
— — 1
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
6
—
2.4
2.6
—
—
—
300
—
—
—
—
—
—
0.36
—
—
0.07
7.5
0.5
3.0
—
13.2
7.2
2
—
100
350
300
300
2.6
160
—
0.21
0.47
—
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
K/W
K/W
K/W
Feb. 2009
2

MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COLLECTOR CURRENT IC (A)
300
250
200
150
100
OUTPUT CHARACTERISTICS
(TYPICAL)
VGE=20
(V)
Tj=25°C
15
14 13
12
11
10
50
9
8
0
0 2 4 6 8
10
COLLECTOR CURRENT IC (A)
300
250
200
150
100
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
50
Tj = 25°C
Tj = 125°C
0
0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
5
4
3
2
1
0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
Tj = 25°C
Tj = 125°C
0 40 80 120 160 200 240 280 300
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
10
8
6
4
2
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
Tj = 25°C
0
0 4 8 12 16
IC = 300A
IC = 150A
IC = 60A
20
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
10 2 7
5
3
2
10 1 7
5
3
2
10 0 Tj = 25°C
1.0 1.4 1.8
2.2 2.6
CAPACITANCE Cies, Coes, Cres (nF)
10 2 7
5
3
2
10 1 7
Cies
5
3
2
10 0 Coes
7
5
3
2
Cres
10 –1 VGE = 0V
10 –1 2 3 5 710 0 2 3 5 710 1 2 3 5 710 2
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009
3

MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIMES (ns)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
7
5
3
2
Tj = 125°C
td(off)
10 2 7
5
td(on)
3
2
tr
VCC = 300V
10 1
VGE = ±15V
RG = 4.2Ω
7
10 1 2 3 5 7 10 2 2 3 5 7 10 3
tf
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10 3 7
5
3
2
10 2 7
5
3
2
–di/dt = 300A/µs
Tj = 25°C
10 1
10 1 2 3 5 7 10 2
trr
lrr
10 2
7
5
3
2
10 1
7
5
3
2
10 0
2 3 5 7 10 3
REVERSE RECOVERY CURRENT Irr (A)
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10
10 1
–3 23 5710 –2 23 5710 –1 23 5710 0 23 5710 1
7
5
Single Pulse
3 TC = 25°C
2
Per unit base =
10
7 0 Rth(j – c) = 0.21K/W
5
3 3
2 2
10 –1 10 –1
7 7
5 5
3 3
2
2
10 –2 10 –2
7 7
5 5
3 3
2
2
10 –3 10 –3
10 –5 23 5710 –4 23 5710 –3
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j – c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
10 1
–3 23 5710 –2 23 5710 –1 23 5710 0 23 5710 1
7
5
Single Pulse
3 TC = 25°C
2
Per unit base =
10
7 0 Rth(j – c) = 0.47K/W
5
3 3
2 2
10 –1 10 –1
7 7
5 5
3 3
2
2
10 –2 10 –2
7 7
5 5
3 3
2
2
10 –3 10 –3
10 –5 23 5710 –4 23 5710 –3
TIME (s)
TIME (s)
GATE-EMITTER VOLTAGE VGE (V)
20
15
10
5
GATE CHARGE CHARACTERISTICS
(TYPICAL)
IC = 150A
VCC = 200V
VCC = 300V
0
0 100 200 300 400
GATE CHARGE QG (nC)
Feb. 2009
4