Annual Report 2012 - Latvijas Universitātes Cietvielu fizikas institūts

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LABORATORY OF SEMICONDUCTOR OPTOELECTRONICS Head of Laboratory Dr. phys. B.Polakovs Research Area and Main Problems 1. Laser processing of amorphous hydrogenised silicon thin films for solar cell applications. Investigation of effects of pulsed laser processing on electric, structural, morphological and photoconductive properties of a-Si:H films. Development of solar cell prototypes. Scientific cooperation with semiconductor joint stock company Alfa. 2. Laser scribing and laser processing of graphite, graphene and graphene oxide, advanced methods of graphene printing on solid substrates. Optical microscopy, Atomic force microscopy and Scanning Electron microscopy investigation of printed graphene structures. 3. Synthesis of metal and semiconductor nanocrystals for photonic and solar cell applications. Investigation of optical, electrical and photoconductive properties of nanocrystals thin films. Development of nanocrystals based solar cell and hybrid nanocrystals-polymer solar cell prototypes. 4. MOCVD synthesis of group III-nitrides for photonic and electronic applications. Investigation of structure and morphology (XRD, RHEED, SEM, AFM). Investigation of electronic processes using stationary and time-resolved nanoand picosecond UV-VIS spectroscopy. 5. Controlled manipulations of 1D and 0D nanostructures inside Scanning Electron Microscope. Investigation of tribological aspects of nanostructures manipulation (adhesion, static, kinetic friction), nanoindentation experiments, mechanical characterization (Young modulus, bending strength and yield strength) of semiconducting and metallic nanowires. Scientific cooperation with Institute of Physics (University of Tartu) and Estonian Nanotechnology Competence Centre. Scientific Staff Prof., Dr. habil. phys. I. Tale Dr. phys. J. Butikova Dr. phys. L. Dimitrocenko Dr. phys. P. Kulis Dr. phys. B. Polyakov Mg. phys. J. Jansons PhD Students Mg. phys. Guntis Marcins Mg. phys. Andris Voitkans Students Edgars Butanovs Julija Pervenecka Cooperation Latvia Institute of Biomedical Engineering and Nanotechnologies, Riga Technical University G. Liberts Innovative Microscopy Center, University of Daugavpils Joint stock company “Alfa” Germany University of Rostock, Rostock Company “Aixtron”, Achen Max Plank Institute of Plasma Physics, Garching Estonia Institute of Physics, University of Tartu Estonian Nanotechnology Competence Centre, Tartu 22
Main Results LASER CRYSTALLIZATION OF a-Si:H FOR SOLAR CELL APPLICATIONS G. Marcins, J. Butikova, J. Pervenecka, B. Polyakov, A. Muhin, I. Tale Manufacturing of thin film amorphous silicon solar cells has perspectives with a condition of improving solar cell efficiency and reducing production costs. Efficiency of amorphous silicon solar cells decreases with time due to formation of metastable light-induced defects. Laser crystallization helps to prevent this effect. We apply visible laser wavelength for laser crystallization in contrast to widely used exciton laser crystallization, which able to process only ~100 nm thick a-silicon layer. Primary effects of laser crystallization of a-silicon are dopants activation, and increase of charge carrier mobility due to higher crystallinity of processed silicon. Additional effect is texturing of initially smooth surface, which decreases back reflection of incident light and increases efficiency of a solar cell. Amorphous silicon crystallization by laser beam of visible wavelength opens additional possibilities to process the whole p-i-n structure of thin film solar cell I-V curves of amorphous and laser processed a-Si:H solar cells. simultaneously. A-Si:H p-i-n thin film solar cell was grown by PECVD on ITO-coated glass substrates. Laser crystallization was successfully applied for processing the whole p-i-n structure of total thickness around 300 nm. A significant improvement of solar cell output parameters in comparison to a non-processed cell was achieved. GRAPHENE STAMP PRINTING J. Butikova, B. Polyakov, E. Butanovs, L. Dimitrocenko, I. Tale Graphene as a single monolayer of covalently bonded carbon atoms is an intriguing material for both fundamental and applied science. Due to its outstanding electronic and thermal properties (high charge carrier mobility, high heat conductance, etc.) graphene raised huge interest in the last decade, and became a real candidate as a successor of silicon in future microelectronics. There is plenty of graphene synthesis methods, however, the best electric properties were demonstrated by graphene mechanically cleaved from HOPG. Cleaved HOPG graphene sheets, nevertheless, are usually irregular in shape and thickness, and therefore are not suitable for integration in microelectronics devices. Highly oriented pyrolytic graphite (HOPG) was scribed by the pulsed laser beam to produce square patterns. Patterning of HOPG surface facilitates the detachment of graphene layers during contact printing. Direct HOPG-to-substrate and glue-assisted stamp printing of a few-layers graphene was compared. Printed graphene sheets were visualized by optical and scanning electron microscopy. The number of graphene layers was measured by atomic force microscopy. Glue-assisted stamp printing allows printing relatively large graphene sheets (40×40 μm) onto a silicon wafer. The presented method is easier to implement and is more flexible than the majority of existing ways of placing graphene sheets onto a substrate. 23
Page 1 and 2: Institute of Solid State Physics Un
Page 3 and 4: CONTENTS Introduction 4 Department
Page 5 and 6: ORGANIZATIONAL STUCTURE OF THE ISSP
Page 7 and 8: The annual report summarizes the re
Page 9 and 10: The main source for international f
Page 11 and 12: lector at the Faculty of Physics an
Page 13 and 14: the samples having different phase
Page 15 and 16: LABORATORY OF MAGNETIC RESONANCE SP
Page 17 and 18: Scientific publications 1. U. Rogul
Page 19 and 20: Main investigations and results ALU
Page 21: Lectures on Conferences 28 th LU Sc
Page 25 and 26: CONTROLLED MANIPULATION AND MECHANI
Page 27 and 28: DEPARTMENT OF FERROELECTRICS Head o
Page 29 and 30: Belorussia 1. Institute of solid st
Page 31 and 32: Density and dielectric properties f
Page 33 and 34: CONCENTRATION AND THERMAL PHASE TRA
Page 35 and 36: Latvia; SSPA ”Scientific-Practica
Page 37 and 38: • Δ T εmax : Mn>Co>Fe>Cu~Ni •
Page 39 and 40: Li x Na 1-x Ta y Nb 1-y O 3 Solid S
Page 41 and 42: 34. А.И. Бурханов, И.Е.
Page 43 and 44: 16. Š. Svirskas, M. Ivanov, Š. Ba
Page 45 and 46: 45. С.Н. Каллаев, А.Р.
Page 47 and 48: LABORATORY OF VISUAL PERCEPTION Hea
Page 49 and 50: in terms of colour coordinate dispe
Page 51 and 52: 4. R.Truksa, S.Fomins, M.Ozolins, "
Page 53 and 54: Scientific visits abroad 1. Dr. hab
Page 55 and 56: experimental data. We focused on th
Page 57 and 58: GB1 with oxygen vacancy revealed th
Page 59 and 60: Fig. 4. The thermodynamic stability
Page 61 and 62: a supercell model was used, and the
Page 63 and 64: a) b) l [110] d [110] (001) Fig. 9.
Page 65 and 66: Drain CNT Source Drain GNR Source 5
Page 67 and 68: The oxygen incorporation energy for
Page 69 and 70: such as high thermal stability, ver
Page 71 and 72: STATISTICAL ANALYSIS AND CELLULAR A
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REGIONS OF AZIMUTHAL INSTABILITY IN
Page 75 and 76:
25. A. Gopejenko, Yu.F. Zhukovskii,
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15. S. Piskunov and E. Spohr, "SrTi
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43. P. Merzlakov, G. Zvejnieks, V.N
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XII. Annual Monitory Meeting of Eur
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91. L. Shirmane, A.I. Popov, V. Pan
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115. A.I. Popov, J. Zimmermann, V.
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Estonia Institute of Physics, Tartu
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5. Grigorjeva L., Jankoviča D., Sm
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LABORATORY OF AMORPHOUS MATERIALS S
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Main results ABSORPTION AND LUMINES
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LUMINESCENCE OF FUSED AND UNFUSED B
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enables sensitive and selective det
Page 99 and 100:
LABORATORY OF OPTICAL RECORDING Hea
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HOLOGRAPHIC LITHOGRAPHY IN AMORPHOU
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5. U.Gertners, J.Teteris, The impac
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24. J.Aleksejeva, J.Teteris, A.Tokm
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Israel Technion, Haifa (Dr.S.Stolya
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3. A. Rusakova, J. Maniks, K. Schwa
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• Investigation of energetic stru
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Scheme 2 Synthesis of indane-1,3-di
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The synthesized compounds ZWK-1, DW
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7. A. Vembris, K. Pudzs, I. Muzikan
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20. A. Vembris, K. Pudzs, I. Muzika
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• Ion transfer problems related t
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13. SIA „EMU PRIM”, 14. JSC „
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Main results Laboratory of Solid St
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Flax and Hemp Fiber Functionalizati
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CHARACTERIZATION OF LiFePO4/C COMPO
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Fig.1. Upper panel: 4 × 4 ×4 supe
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Fig.1. Left panel: Schematic view o
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Titania with anatase structure is i
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RESEARCH OF CATHODE MATERIALS FOR L
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17. T Dizhbite, J Ponomarenko, A An
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6. J. Kleperis, B. Sloka, J. Dimant
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33. P. Lesnicenoks, A. Sivars, L. G
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France 1. Institute Laue-Langevin,
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different neutron orbits (11/2[615]
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LABORATORY OF ELECTRONIC ENGINEERIN
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2. For JSC Augstsprieguma tīkls an
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4. By orders of several organizatio
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Partners: Fonons Ltd, Riga Technica
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Annual Report 2012 - Latvijas Universitātes Cietvielu fizikas institūts

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