Annual Report 2012 - Latvijas Universitātes Cietvielu fizikas institūts
Annual Report 2012 - Latvijas Universitātes Cietvielu fizikas institūts
Annual Report 2012 - Latvijas Universitātes Cietvielu fizikas institūts
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Main results<br />
ABSORPTION AND LUMINESCENCE IN AMORPHOUS Si x Ge 1-x O 2 FILMS<br />
FABRICATED BY SPCVD<br />
A.N.Trukhin, K.M. Golant 2 , J. Teteris 1<br />
1 University of Latvia, Solid State Physics Institute, LV-1063, Riga, Latvia<br />
2 Kotel’nikov Institute of Radio-engineering and Electronics of RAS,<br />
125009 Moscow, Russia<br />
Optical absorption and photoluminescence of Ge-doped silica films fabricated by the<br />
surface-plasma chemical vapor deposition (SPCVD) are studied in the 2-8 eV spectral<br />
band. The deposited on silica substrates films of about 10 microns in thickness are<br />
composed as Si 1-x Ge x O 2 with x ranging from 0.02 to 1. It is found that all as deposited<br />
films do not luminesce under the excitation by a KrF (5 eV) excimer laser thus<br />
indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of<br />
silicon containing (x
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