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Эволюция технологий кристаллов IR HEXFET<br />
600V<br />
200V<br />
Gen 3.x<br />
Divesture:<br />
55V-500V FETS<br />
+ Diodes, Rectifiers<br />
(10+ Year Old<br />
Technology)<br />
Новые<br />
поколения<br />
Gen 10.0,<br />
10.1, 10.2<br />
Gen 10.7<br />
40V<br />
Gen 5.x<br />
Gen 7.x<br />
Gen 8.0<br />
Gen 10.5,<br />
10.55<br />
Gen<br />
10.59<br />
12V<br />
2000<br />
2007<br />
Planar MOSFET<br />
Trench MOSFET
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