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Новые поколения ключевых
приборов и ИС управления
компании
International Rectifier
Мир Электроники
Ноябрь 2008
1

Расширение номенклатуры высоковолтных ИС драйверов 5 поколения. Новые
семейства ИС для привода, источников питания и автоэлектроники. Новые
функциональные особенности и особенности устройства повышающие
надежность.
- Интегральные Superback POL конверторы. Номенклатура, особенности,
преимущества перед аналогами.
- Новые технологии TrenchFET. Рост показателей качества кристалла
- Новая платформа корпусовдля поверхностного монтажа. Преимущества
MOSFET в DirectFET 2 и PQFN корпусах. Номенклатура новых приборов.
- Новые поколения TrenchFET с эталонными характеристиками в стандартных
корпусах для источников питания и низковольтного привода.
- Расширение номенклатуры Trench IGBT Gen6 для UPS , DC/AC. Планируемое
поколение Gen7 600-1200B Trench IGBT для промышленных приложений и
бытовой техники (привод, сварка, индукционный нагрев). Преимущества перед
аналогами и предыдущим поколением.
- Революционная технологическая платформа "GaN на кремнии". Преимущества
по отношению к другим технологиям, перспективные показатели качества.

Высоковольтные ИС драйверов нового поколения

Tolerance & Immunity to Negative V S
Transients
Typ. IC-Failure mechanisms :
- HO flip
-Latch up
The negative V s Spike problem increases dramatically
with increasing die size of Trench IGBTs switching
huge current densities in a short time
Negative Vs ruggedness will be a decisive factor in the IC selection

Tolerance & Immunity to Negative VS Transients
IR introduces NTSOA
(Negative Transient Safe Operating Area)
DC+ BUS
NEW in IR PRODUCT DATASHEET !
time [nsec]
0 100 200 300 400 500 600 700 800 900 1000
10
Q1
OFF
V S1
Q2
OFF
D1
-
V LC2
+
-
V LE2
+
DC- BUS
-
V D2
+
I U
Negative V S
Stress
amplitude [V]
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
50,-50
10,-70
100,-40
200,-32
150,-36
300,-27
400,-23
550,-15 1000,-15
500,-21
enabling safe & reliable operation under
- Normal switching conditions
- Extreme Short Circuit Events
Transient VSx SOA @ V BS =15V
VS SOA
New HVIC circuitry provides improved resistance to –V S fault
conditions (new Gen5 IRS233x and IRS26xxx families)

Tolerance & Immunity to Negative VS Transients
IR’s New HVICs set an Industry benchmark
outperforming the Competition by far
10
time [nsec]
0 100 200 300 400 500 600 700
0
-10
-20
-30
-40
-21
-26
Competitor’s
destructive
Failures!!!
amplitude [V]
-50
-60
-70
-80
-90
Datasheet SOA
-50
IR latch-up limit
Point of Failure for Negative Vs Transient @ V BS =15V
New –V S Immunity Circuitry for IR HVIC:
IR’s new ICs NEVER flip or glitch HO!!
(Latch-up can occur above SOA curve)
Competitor S
Competitor F
IRS2607D

IRS26xxx(D) and IRS233x(D) – Family Launch
Common Features
Designed, characterized & tested to be
tolerant to rep. negative Vs transient voltage
Characterized to withstand short circuit events
Fully operational to +600 V
Tolerant to large dV/dt
Option: Integrated bootstrap diode for floating
channel supply (D-version)
Shoot-through (cross-conduction) protection
3.3 V logic compatible
IRS233(0,2)(D) 3-Phase Driver
Integrated Operational Amplifier
Over-Current protection & shut down
Advanced input filter
Shoot-through (cross-conduction)
protection
IRS260xD Halfbridge driver
compatible with trapezoidal & sinusoidal motor
drives schemes
IRS263xxD 3-Phase Driver
Over-Current protection
Advanced input filter
IRS26310D
DC bus sensing with Over Voltage
protection and Zero Vector automatic
insertion for safe PM-motor design
IRS26302D
3-Phase driver plus 7 th channel low
side driver
Full Over-Current protection:
•DC-(Itrip), DC+(Ground fault)
•PFCtrip/BRtrip (PFC/Brake protect.).
Direct interface DC+ shunt for Over-
Current protection (ground fault) w/o
need for external bias supply
Enhanced fault diagnostic with simple
protocol to address fault register

IRS26310D
600 V, Three-Phase Driver with Bus Over-Voltage Protection
Features:
200 mA / 350 mA drive (x6)
Integrated bus over-voltage
protection
Integrated bootstrap
functionality
Overcurrent shutdown input
UVLO protection (V CC & V BS )
Adjustable fault clear timing
Enable I/O and fault reporting
Separate logic and power
ground
Advanced input filter
Fixed deadtime
Shoot-through protection
Improved DC operation under
negative V S conditions
VCC
DC Bus
Sense
ITRIP
VSS
IRS26310D
VB
(x3)
HO
(x3)
VS
(x3)
LO
(x3)
COM
DC+ BUS
CBS
RG,HO
RG,LO
VS1 VS2 VS3
RSHUNT
DC- BUS

IRS26302D
600 V, Three-Phase Driver with Ground Fault Protection & 7 th Channel
200 mA / 350 mA drive (x6)
Integrated bootstrap
functionality
Integrated 7 th channel
‣Brake IGBT driver
‣PFC driver
Full Overcurrent Protection
Integrated ground fault
protection on DC+
ITRIP protection on DC-
PFC/Brake IGBT ITRIP
protection
UVLO protection (V CC & V BS )
Adjustable fault clear timing
Enable I/O and fault reporting
Advanced input filter
Fixed deadtime
Shoot-through protection
Improved DC operation under
negative V S conditions
Separate logic and power ground
Brake or
PFC IGBT
V CC
PFC/
BRAKE
V DC
R GF,SHUNT
GF
V B
(x3)
HO
(x3)
V S
(x3)
DC+ BUS
C BS
V S1 V S2 V S3
LO
ITRIP
(x3)
V SS COM
DC- BUS
R ITRIP,SHUNT

200 mA / 420 mA drive (x6)
Integrated Operational
Amplifier
Gate drive supply range (10 V-
20 V)
Floating channel designed for
bootstrap operation
Undervoltage lockout for all
channels
Over-current shutdown turns off
all six drivers
Independent half-bridge drivers
Matched propagation delay for
all channels
Deadtime (typ.)
IRS2330(D) 2.0 µs
IRS2332(D) 0.7 µs
IRS233(0,2)(D)
600 V, Three-Phase Driver
3.3 V logic compatible
Outputs out of phase with inputs
Cross-conduction prevention logic
Integrated Bootstrap Diode
function (IRS233(0,2)D only)

IRS2336(4)(D)
600 V, General Purpose, Three-Phase Driver
180 mA / 330 mA drive (x6)
Gate drive supply range (10 V-
20 V)
Floating channel designed for
bootstrap operation
Undervoltage lockout for all
channels
Over-current shutdown turns off
all six drivers
Shoot-through protection
Advanced input filter
Matched propagation delay for
all channels
Enable/disable input & fault
reporting
Adjustable fault clear timer
3.3 V logic compatible
Cross-conduction prevention logic
Integrated Bootstrap Diode
function (IRS2336(4)D only)
Deadtime (typ.) 300ns

IRS260xD Family
600 V, Half-Bridge and High- & Low-Side Drivers
Features:
• 290 mA / 600 mA drive (x2)
• Integrated bootstrap functionality
compatible with both trapezoidal and sinusoidal motors
• UVLO protection (V CC & V BS )
• V out from 10 – 20 V
• SD input pin (IRS2609 only)
• Input logic from 3.3 V, 5 V, & 15 V
• 8 pin SOIC
Part Number Topology Input Logic SD Input
IRS2607D High- & Low-Side HIN, LIN No
IRS2608D Half-Bridge HIN, LIN/N No
IRS2609D Half-Bridge IN Yes

HVIC-Automotive Applications without IR’s ICs
AUTOMOTIVE
LIGHTING Injection DC/DC HV Motor Drives
High Intensity Discharge Direct Piezo Injection Dual Powernet/HEV HEV Powertrain & Periphery

Automotive HVIC Roadmap (36 AU-Products)
NEW
PP-SPP-#
AU- Check Check
Projected AU
Projected AU sample
availability DATE
Automotive p/n
(DR0)
Datasheet DR1 DR2 CheckDR3 Qualification (

Customer-Benefits of Automotive HVIC P/N
• Assigned Wafer Fab
• Assigned Assembly site
• Assigned Product Engineer
• 100% probe & Tri-Temp-Test
• Opt.: add. automotive screening
solid Change management
solid Change management
Q-Tracking & Continuous Improvement
Field Failure-Rate reduction
Field Failure-Rate reduction
“Ready-to-sell/use” Products
• Short Time to Market for AU-portfolio (no/low risk due to existing qualification)
• Short PPAP delivery time
• RoHS, PBF, Automotive Grade following AEC-Q100 guidelines
• Short response time (FA, 8D)
• Automotive Datasheet
• Automotive Part Marking
• Clear segregation from IR standard parts

AUIRxxxx Continuous Improvement Process
Failure Rate
[arb.units]
IRxxxxx
(Schematic)
Typ. Failure rate of IR standard part
AUIRxxxxx
Reduced failure rates by implementation of tighter test & screening
(e.g. HT-, TriTemp,…) and dedicated AU-assembly lines
Product & Technology dependent
Continuous Improvement, e.g. :
- Q- and failure tracking
- Test & Screening
- Manufacturing/Assembly line
changes
- Equipment Upgrade
- Design/BOM changes
-etc….
Typical target
defect goal
Release
date
Time

Новые поколения TrenchMOSFET 25-200B

Эволюция технологий кристаллов IR HEXFET
600V
200V
Gen 3.x
Divesture:
55V-500V FETS
+ Diodes, Rectifiers
(10+ Year Old
Technology)
Новые
поколения
Gen 10.0,
10.1, 10.2
Gen 10.7
40V
Gen 5.x
Gen 7.x
Gen 8.0
Gen 10.5,
10.55
Gen
10.59
12V
2000
2007
Planar MOSFET
Trench MOSFET

R*AA 4.5V (mOhm.mm2)
Эволюция показателей качества кристалла
45
40
35
30
25
20
15
10
5
0
низковольтных MOSFET IR
Figure of Merit for 30VN
Gen10.55
R*AA 4.5V
R4.5*Qg
Gen10.59
1995 2000 2005 2010
250
200
150
100
Gen 10.59 – более компактный кристалл (ниже цена), нсеколько более низкие потери
50
0
R4.5*Qg (mOhm.nC)

Эволюция показателей качества кристалла MOSFET IR на
напряжения 40-250В
Figure Of Merit for 100VN
R*AA, mohm*mm2
200
150
100
50
0
Gen 7.5
Gen 8.0
Gen 10.7 is very competitive
in markets that value
efficiency.
Fairchild and ST’s
performance similar to gen
10.2.
Gen 10.2
Gen 10.7
Gen 10.8
1000
800
600
400
200
0
R*Qg, mohm*nC
2000 2001 2002 2003 2004 2005 TBD
R*AA
R*Qg, mohm*nC

Новые MOSFET Gen10.59 в корпусе SO-8
•Низкое Rds(on) и Qg
•Рекомендуются для понижающих DC/DC
•Лучший показатель качество/цена в отрасли
•Низкие потери проводимости повышают КПД синхронного
выпрямителя конвертора при полной загрузке, низкие потери
переключения повышают КПД при низкой загрузке
Типономинал
Rds(on) [Мом]
Id [A]
Vgs=4.5В Vgs=10В 25C 70C
Qg [нК] Qgd [нК] Корпус
IRF8707PBF 25,0 8,3 6,6 9,5 2,4 SO-8
IRF8714PBF 13,0 8,7 14,0 11,0 8,1 3,0 SO-8
IRF8721PBF 12,5 8,5 14,0 11,0 8,3 3,2 SO-8
IRF8736PBF 6,8 4,8 18,0 14,4 17,0 5,8 SO-8
IRF7852PBF 4,5 3,7 21,0 17,0 30,0 9,8 SO-8
IRF8788PBF 11,8 8,4 24,0 19,0 44,0 14,0 SO-8
IRLR8721PBF 3,9 3,1 65,0 46,0 8,5 3,4 DPak
IRLR8743PBF 3,8 2,8 160,0 113,0 39,0 13,0 DPak

Универсальность новых MOSFET
IRF8736 заменяет более 30 типономиналов
Part #
IRF7455PBF
IRF7458PBF
IRF7463PBF
IRF7805ZPBF
IRF7822PBF
IRF7835PBF
IRF7836PBF
IRF8113PBF
STS17NF3LL
STS17NH3LL
HAT2040R
HAT2064R
HAT2118R
HAT2195R
HAT2197R
RJK0316DSP
RJK0352DSP
RJK0353DSP
RJK0354DSP
Mfg
IR
IR
IR
IR
IR
IR
IR
IR
ST
ST
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Renesas
Part #
FDS6670A
FDS6682
FDS6688
FDS8690
FDS8817NZ
FDS8874
FDS8896
BSO052N03S
BSO064N03S
BSO072N03S
BSO4420
BSO4420NT
NTMS4503NR2
Si4386DY
Si4634DY
Si4874BDY
SI4888DY-T1-E3
STS17NF3LL
STS17NH3LL
Mfg
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
Infineon
Infineon
Infineon
Infineon
Infineon
ON Semi
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay

Корпус 5х5мм PQFN
Manufacturing Complexity
Power Density/Thermal Performance
PQFN и S08 занимают
одинаковую площадь
SO8 top view
• У PQFN высота коруса 0.9мм – в 2 раза ниже SO-8
•У PQFN ниже Rкорпуса, выше нагрузочна способность
по току
•У PQFN лучше тепловые характеристики и выше
плотность энергии
• PQFN снижает температуру Sync Fet на 28°C и
Control Fet на 9°C
•PQFN и SO-8 близки по цене

Gen10.59 MOSFET в корпусе PQFN
Типономинал
BVdss
[B]
Rds(on) [Мом]
Id [A]
Vgs=4.5В Vgs=10В 25C 70C
Qg [нК] Qgd [нК] Корпус
IRFH7914TRPBF 30 13.0 8.7 15 12 8.3 2.8 PQFN
IRFH7921TRPBF 30 12.5 8.5 15 12 9.3 3.2 PQFN
IRFH7923TRPBF 30 11.9 8.7 15 12 8.7 2.7 PQFN
IRFH7932TRPBF 30 3.9 3.3 25 20 34.0 11.0 PQFN
IRFH7936TRPBF 30 6.8 4.8 20 16 17.0 5.5 PQFN

Миграция MOSFET из SO-8 в PQFN
IRF7821
(30v) (Gen 10.5)
IRF7823
(30v) (Gen 10.55)
IRF8721
(30v) (Gen 10.59)
IRFH7923
(30v) (PQFN Gen 10.55)
IRFH7921
(30v) (PQFN Gen 10.59)
IRF7413Z
(30v) (Gen 10.5)
IRF8714
(30v) (Gen 10.59)
IRFH7914
(30v) (PQFN Gen 10.59)
IRF7832
(30v) (Gen 10.5)
IRF7832Z
(30v) (Gen 10.55)
IRF7862
(30v) (Gen 10.59)
IRF8736
(30v) (Gen 10.59)
IRFH7932
(30v) (PQFN Gen 10.59)
IRFH7936
(30v) (PQFN Gen 10.59)
IRF7836
(30v) (Gen 10.55)

DirectFET 2

DirectFET
•Высота корпуса 0.7мм
•Максимальное отношение
Sкристалла/Sкорпуса
•Нет разварки кристалла

Small Can DirectFET
Micro8
DirectFET
Small-Can
TSSOP-8
SO-8
3.05 x 5.03 x 1.11
(0.026 grams)
15.3mm 2
17.0mm 3 3.95 x 4.85 x 0.70
(0.049 grams)
19.2mm 2
13.4mm 3 3.10 x 6.40 x 1.20
(0.035 grams)
19.8mm 2
23.8mm 3
5.00 x 6.20 x 1.78
(0.082 grams)
31.0mm 2
55.2mm 3
44% Volume Reduction
21% Volume Reduction
38% Area Reduction
75% Volume Reduction

Medium Can DirectFET – размер кристалла как у D-Pak
SO-8
DirectFET
Medium Can
D-Pak
5.00 x 6.20 x 1.78
(0.082 grams)
31.0mm 2
55.2mm 3
60% Volume Reduction
5.05 x 6.35 x 0.70
(0.085 grams)
32.1mm 2
22.4mm 3
6.73 x 10.42 x 2.38
(0.325 grams)
70.1mm 2
166mm
54% Area Reduction
3
87% Volume Reduction

Large Can – площадь кристалла на 42% больше D2Pak
DirectFET
Medium
Can
DirectFET
Large Can
D-Pak
D 2 Pak
7.00 x 9.10 x 0.70
10.7 x 15.9 x 4.83
5.05 x 6.35 x 0.70
6.73 x 10.4 x 2.38
Volume 22.4mm 3 44.6mm 3 166mm 3
822mm 3
Area
(0.085 grams)
32.1mm 2
(0.178 Grams)
63.7mm 2
(0.325 grams)
70.1mm 2
(1.26 grams)
170mm 2
54% Area Reduction
87% Volume Reduction
9% Area Reduction
73% Volume Reduction 63% Area Reduction
95% Volume Reduction
81% Area Reduction
97% Volume Reduction

DirectFET- ультранизкое Rкорпуса
В DirectFET минимально расстояние для протекания тока и
распространения тепла
1.6
1.4
SO-8
Cu-strap
SO-8
DFPR (mOhm)
1.2
1
0.8
0.6
0.4
0.2
< 0.1мОм
0
DirectFET
Bottomless SO-8TM
LFpak
SO-8

DirectFET – двусторонний отвод тепла
SO-8
Rth(j-a) top >55°C/W
at 400 LFM
Rth(j-c): 18°C/W
DirectFET
Rth(j-a) top 40 °C/W
Rth(j-a) bottom >60°C/W
Rth(j-a) bottom >41°C/W

DirectFET – ультранизкая паразитная индуктивность корпуса
Паразитная индуктиность корпуса DirectFET 5нГн – в 10 раз ниже D2Pak, в 5
–DPak, в 3 – SO-8

DirectFET – высокое качество переходных процессов
при переключении
1
2
3

DirectFET 2
Типономинал
BVdss
[B]
Rds(on) [Мом]
Id [A]
Vgs=4.5В Vgs=10В 25C 70C
IRF6715MPBF 25 2.7 1.6 34 27 40.0 12.0 MX
IRF6716MTRPBF 25 2.6 1.6 39 31 39.0 12.0 MX
IRF6714MPBF 25 3.4 2.1 29 23 29.0 8.0 MX
IRF6713STRPBF 25 4.5 3.0 22 17 21.0 6.3 SQ
IRF6712STRPBF 25 8.7 4.9 17 13 12.0 4.0 SQ
IRF6710S2PBF 25 14.0 7.6 12 10 8.5 2.6 S1
IRF6721SPBF 30 8.5 5.1 14 11 11.0 3.7 SQ
IRF6722SPBF 30 8.0 4.7 13 11 11.0 4.1 ST
IRF6722MPBF 30 8.0 4.7 13 11 11.0 4.3 MP
IRF6724MPBF 30 2.7 1.9 27 21 33.0 10.0 MX
IRF6725MPBF 30 2.4 1.7 28 22 36.0 11.0 MX
IRF6726MPBF 30 1.9 1.3 32 25 51.0 16.0 MT
IRF6727MPBF 30 1.8 1.2 32 28 49.0 16.0 MX
DirectFET 2 – в настоящее время представлены Gen 10.59
Qg [нК] Qgd [нК] Корпус

DirectFET : обновление в диапазоне 20 – 25В
R DS(ON)
V GS
Max.
Part
BVDSS
Max.
@ 10V
Max.
@ 4.5V
Max.
@ 10V
Typ.
@ 4.5V
Typ.
Status
Pad
Outline
Number (V) (mΩ) (mΩ) (mΩ) (mΩ) (V) (nC) (nC) (nC) Samples Production Code
IRF6609TRPBF 2.0 2.6 1.6 2.0 ±20 46 15 20 Now
MT
IRF6619TRPBF 2.2 3.0 1.65 2.2 ±20 38 13 17 Now
MX
IRF6620TRPBF 2.7 3.6 2.1 2.8 ±20 28 8.8 12 Now
MX
IRF6636TRPBF 20 4.5 6.4 3.2 4.6 ±20 18 6.1 8 Now
ST
IRF6623TRPBF 5.7 9.7 4.4 7.5 ±20 11 4.0 5.2 Now
ST
IRF6633TRPBF 5.6 9.4 4.1 7.0 ±20 11 4.0 5.2 Now
MP
IRF6610TRPBF 6.8 10.7 5.2 8.2 ±20 11 3.6 4.9 Now
SQ
IRF6716MTRPBF 1.6 2.6 1.2 2.0 ±20 39 12.0 17.3 Now
MX
IRF6715MPBF 1.6 2.7 1.3 2.1 ±20 40 12.0 17.0 Now
MX
IRF6629TRPBF 2.1 2.7 1.6 2.1 ±20 34 11 15 Now
MX
IRF6714MPBF 2.1 3.4 1.6 2.6 ±20 29 8 12.0 Now
MX
IRF6628TRPBF 25 2.5 3.3 1.9 2.5 ±20 31 12 16 Now
MX
IRF6713STRPBF 3.0 4.6 2.2 3.5 ±20 21 6.3 9.0 Now
SQ
IRF6712STRPBF 4.9 8.7 3.8 6.7 ±20 12 4.0 5.8 Now
SQ
IRF6622TRPBF 6.3 8.9 4.9 6.8 ±20 11 3.8 5.4 Now
SQ
IRF6710S2PBF 7.6 14 5.8 11 ±20 8.5 2.6 3.8 Now Jan '08 S1S55
Q G
Typ.
Q GD
Typ.
Q SW
Typ.

DirectFET : обновление в диапазоне 30 – 40В
R DS(ON)
V GS
Max.
Part
BVDSS
Max.
@ 10V
Max.
@ 4.5V
Max.
@ 10V
Typ.
@ 4.5V
Typ.
Status
Pad
Outline
Number (V) (mΩ) (mΩ) (mΩ) (mΩ) (V) (nC) (nC) (nC) Samples Production Code
IRF6727MPBF 1.7 2.4 1.2 1.8 ±20 49 16 21 Now
MX
IRF6635TRPBF 1.8 2.4 1.3 1.8 ±20 47 17 22 Now
MX
IRF6678TRPBF 2.2 3.0 1.7 2.3 ±20 43 15 19 Now
MX
IRF6726MPBF 1.7 2.4 1.3 1.9 ±20 51 16 21 Now
MT
IRF6618TRPBF 2.2 3.4 1.7 - ±20 43 15 19 Now
MT
IRF6725MPBF 2.2 3.2 1.7 2.4 ±20 36 11 15 Now
MX
IRF6611TRPBF 2.6 3.4 2.0 2.6 ±20 37 12.5 15.8 Now
MX
IRF6638TRPBF 30 2.9 3.9 2.2 3.0 ±20 30 11 14 Now
MX
IRF6612TRPBF 3.3 4.4 2.5 3.4 ±20 30 10 13 Now
MX
IRF6626TRPBF 5.4 7.1 4.0 5.2 ±20 19 6.7 8.3 Now
ST
IRF6721SPBF 7.3 11 5.5 8.3 ±20 12 4.5 5.4 Now
SQ
IRF6631TRPBF 7.8 10.8 6.0 8.3 ±20 12 4.4 5.5 Now
SQ
IRF6621TRPBF 9.1 12.1 7.0 9.3 ±20 11.7 4.2 5.2 Now
SQ
IRF6722MPBF 7.0 10.7 5.2 7.6 ±20 11 4.3 5.5 Now
MP
IRF6637TRPBF 7.7 10.8 5.7 8.2 ±20 11 4.0 5.0 Now
MP
IRF6722SPBF 7.3 11 5.5 7.9 ±20 11 4.3 5.5 Now
ST
IRF6617TRPBF 8.1 10.3 6.2 7.9 ±20 11 4.0 5.0 Now
ST
IRF6613TRPBF 3.4 4.1 2.6 3.1 ±20 42 12.6 15.9 Now
MT
IRF6616TRPBF 40 5.0 6.2 3.7 4.6 ±20 29 9.4 12 Now
MX
IRF6614TRPBF 8.3 9.9 5.9 7.1 ±20 19 6.0 7.4 Now
ST
Q G
Typ.
Q GD
Typ.
Q SW
Typ.

DirectFET: диапазон 60-200В
Part
BVDSS
Max.
@ 10V
Max.
R DS(ON)
@ 10V
Typ.
V GS
Max.
Q G
Typ.
Q GD
Typ.
Q SW
Typ.
Status
AN-1035
Layout
Number (V) (mΩ)
(mΩ) (V) (nC) (nC) (nC) Samples Production Code
IRF6674TRPBF 60 11.0 9.0
±20 24 8 10 Now
MZ
IRF6648TRPBF 7.0 5.5 ±20 36 14 17 Now
MN
IRF6646TRPBF
80
9.5 7.6 ±20 36 12 14 Now
MN
IRF6668TRPBF 15 12 ±20 22 7.8 9.4 Now
MZ
IRF6644TRPBF 13 10 ±20 35 12 13 Now
MN
IRF6662TRPBF
100
22 18 ±20 22 6.8 8.0 Now
MZ
IRF6645TRPBF 35 28 ±20 14 4.8 5.6 Now
SJ
IRF6655TRPBF 62 53 ±20 8.7 2.8 3.4 Now
SH
IRF6643TRPBF
150
35 29 ±20 39 11 13 Now
MZ
IRF6775MTRPBF 47 56
±20 25 6.6 8 Now
MZ
IRF6641TRPBF
200
60 51 ±20 34 9.5 11 Now
MZ
IRF6785MTRPBF 100 85 ±20 26 6.9 8.2 Now
MZ
Small Can
Medium Can
Large Can
[4.9 x 3.6 mm]
[6.3 x 4.9 mm]
[9.1 x 7.0 mm]

SupIRBuck TM – интегральные синхронные
понижающие Point-Of-Load DC/DC конверторы

5x6мм QFN
ИС
HG
Gen 10.5 TrenchFET
Vcc
Bias
Generator
3V
3V
POR
20uA
40uA
3uA
POR
SupIRBuck TM 0.6V
Vc
SS/ SD
Vin
OCP
0.25V
Thermal
Shutdown
4.2V
Fault
Vc
3.3V
0.20V
• Uвх =2.5-21B
•Uвых=0.6-12B
•Fшим фикс 300/600кГц
•Программируемая защита по току
(hiccup стабилизация)
•Защита от перегрева
•Программируемый мягкий старт со
смещением
•Программируемый выход Power Good
•Трэкинг для работы с DDR
•-40 - +125С
•Единый корпус для всех приборов
серии
Gnd
Vp
Fb
Vref
Comp
PGood
Vsns
0.38V
OCP
Set Dom
S
Q
R
Error
Amplifier
PWM Comp
Oscillator
Ramp
POR
PWM Latch
R
Q
S
Reset Dom
Set
2.5V
0.3V
SS
Pre-Bias Latch
R
Q
S
S
Q
R
Set Dom
OCen
Driver
Stage
20uA
LDrv
3V
OCSet
SW
PGnd

SupIRBuck для проффесиональных приложений
Типономинал
IR3812MPBF
Uвх
Max/Min
Uвых
Max/Min
Макс
ток
21 / 2.5 12 / 0.6 4A
Частота Корпус Функции
600KHz
5mm x 6mm QFN OCP + OTP +
TRACKING
IR3822MPBF 21 / 2.5 12 / 0.6 4A 600KHz 5mm x 6mm QFN OCP + OTP + PGOOD
IR3822AMPBF 21 / 2.5 12 / 0.6 6A 300KHz 5mm x 6mm QFN OCP + OTP + PGOOD
IR3811MPBF
21 / 2.5 12 / 0.6 7A
600KHz
5mm x 6mm QFN OCP + OTP +
TRACKING
IR3821MPBF 21 / 2.5 12 / 0.6 7A 600KHz 5mm x 6mm QFN OCP + OTP + PGOOD
IR3821AMPBF 21 / 2.5 12 / 0.6 9A 300KHz 5mm x 6mm QFN OCP + OTP + PGOOD
IR3810MPBF
21 / 2.5 12 / 0.6 12A
600KHz
5mm x 6mm QFN OCP + OTP +
TRACKING
IR3820MPBF 21 / 2.5 12 / 0.6 12A 600KHz 5mm x 6mm QFN OCP + OTP + PGOOD
IR3820AMPBF 21 / 2.5 12 / 0.6 14A 300KHz 5mm x 6mm QFN OCP + OTP + PGOOD
OCP – защита от перегрузки по току
ОТР – защита по перегреву
PGOOD-Power Good

SupIRBuck для бытовой техники
Типономинал
Uвх
Max/Min
Uвых
Max/Min
Max ток Частота Корпус Защита
IR3802MPBF 21/2.5 12/0.6 4A 600kHz 5 x 6мм QFN OCP + OTP
IR3802AMPBF 21/2.5 12/0.6 6A 300kHz 5 x 6мм QFN OCP + OTP
IR3801MPBF 21/2.5 12/0.6 7A 600kHz 5 x 6мм QFN OCP + OTP
IR3801AMPBF 21/2.5 12/0.6 9A 300kHz 5 x 6мм QFN OCP + OTP
IR3800MPBF 21/2.5 12/0.6 12A 600kHz 5 x 6мм QFN OCP + OTP
IR3800AMPBF 21/2.5 12/0.6 14A 300kHz 5 x 6мм QFN OCP + OTP
OCP – защита от перегрузки по току
ОТР – защита по перегреву

SupIRBuck – компактность и простота DC/DC
Реализация на дискретных компонентах:
3x3мм MLPD IC + 2 x SO8 FETs
Реализация на IR38XX
Sплаты: ~100 мм 2 Sплаты: 30 мм 2
• На 70% меньше площадь по сравнению с применением 2 x SO8 FET
• На 35% меньше площадь по сравнению с применением Dual SO8 FET

ВысокийКПДвширокомдиапазоневходных
напряжений
95.0%
90.0%
IR3820 Efficiency at 12Vin Single-Rail Operation
Efficiency [%]
85.0%
80.0%
75.0%
70.0%
65.0%
Vout = 3.3V
Vout = 5V
60.0%
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Iout [A]
0.92
0.90
IR3821 Performance at Vin = 19V, Vout = 3.3V
0.88
0.86
0.84
Efficiency
0.82
0.80
0.78
0.76
0.74
0.72
0.70
0 1 2 3 4 5 6 7 8
Output Current [A]

Cравнение диапазонов напряжений
1V
5V 12V 20V 24V
TI
V o
=0.9-3.3
V in
=3-6
V o
=0.5V-5.5
V in
=12V±10%
V in : 2.5-21 V
V o
=0.6-12V
V in
=2.3-5.5
LTC3418
V o
=0.8-5V
Max8654
V in
=4.5-14
V o
=0.6-11.9

Сравнение КПД IR3821,TPS54880, MAX8654
• IR SupIRBuck
– ИС IR3629
– Gen 10.5 TrenchFET
• TI
– ИС
– Планарный FET
• Maxim
– ИС
– Планарный FET
Efficiency [%]
92.0
90.0
88.0
86.0
84.0
82.0
80.0
78.0
IR3821 Performance Comparison at Vin = Vcc = 5V
IR3821
TPS54880
MAX8654
76.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Iout [A]
Uвх 5В, Uвых 1.8В, F=600кГц. Преимущество IR по КПД в диапазоне
токов 3-8А от1-5% до 5-6%

Обновление номенклатуры мощных MOSFET

Обновление номенклатуры IR MOSFET 60-250В
Power Supply and Industrial
60V-75V FETs for Electric Vehicles & UPS 150V & 200V for Audio and LED Applications
IRFS3806PBF 60V, 42A, 16.2 mOhm, 22 nC Qg, D2-Pak
IRFB4615PBF 150V, 34A, 45.3 mOhm, 28 nC Qg, TO-220AB
IRFR3806PBF 60V, 42A, 16.2 mOhm, 22 nC Qg, D-Pak
IRFB4620PBF 200V, 27A, 70.7 mOhm, 28 nC Qg, TO-220AB
IRFB3806PBF 60V, 42A, 16.2 mOhm, 22 nC Qg, TO-220AB
IRF1018ESPBF 60V, 77A, 8.4 mOhm, 51 nC Qg, D2-Pak
IRFR1018EPBF 60V, 77A, 8.4 mOhm, 51 nC Qg, D-Pak
IRF1018EPBF 60V, 77A, 8.4 mOhm, 51 nC Qg, TO-220AB
IRFS3607PBF 75V, 80A, 9.0 mOhm, 51 nC Qg, D2-Pak
IRFR3607PBF 75V, 80A, 9.0 mOhm, 51 nC Qg, D-Pak
IRFB3607PBF 75V, 80A, 9.0 mOhm, 51 nC Qg, TO-220AB
TO-247 Portfolio Expansion
IRFP3306PBF 60V, 160A, 4.2 mOhm, 85 nC Qg, TO-247AC
IRFP3206PBF 60V, 210A, 3 mOhm, 120 nC Qg, TO-247AC
IRFP3077PBF 75V, 210A, 3.3 mOhm, 160 nC Qg, TO-247AC
IRFP4110PBF 100V, 168A, 4.6 mOhm, 152 nC Qg, TO-247AC
IRFP4410ZPBF 100V, 97A, 9 mOhm, 83 nC Qg, TO-247AC
IRFP4310ZPBF 100V, 127A, 6 mOhm, 120 nC Qg, TO-247AC
Benchmark Performance in TO-247
IRFP2602PBF 24V, 342A, 1.5 mOhm, 259 nC, TO-247AC
IRFP4004PBF 40V, 299A, 1.9 mOhm, 259 nC, TO-247AC
IRFP4368PBF 75V, 283A, 2.3 mOhm, 329 nC Qg, TO-247AC
IRFP4468PBF 100V, 253A, 2.8 mOhm, 313 nC Qg, TO-247AC
IRFP4568PBF 150V, 155A, 7.5 mOhm, 193 nC, TO-247
IRFP4668PBF 200V, 128A, 11.1 mOhm, 193 nC, TO-247
Benchmark performance in 7pin D2-Pak
IRFS3006-7PPBF 60V, 265A, 1.9 mOhm, 185 nC Qg, D2-Pak 7-pin
IRFS3107Z-7PPBF 75V, 202A, 2.8 mOhm, 181 nC Qg, D2-Pak 7-pin
IRFS4010-7PPBF 100V, 170A, 4.0 mOhm, 181 nC Qg, D2-Pak 7-pin
IRFS4115-7PPBF 150V, 92A, 13.5 mOhm, 94 nC Qg, D2-Pak 7-pin
Benchmark performance in TO-220 & D2-Pak
IRFB3006PBF 60V, 229A, 2.6 mOhm, 181 nC Qg, TO-220AB
IRFS3006PBF 60V, 242A, 2.3 mOhm, 185 nC Qg, D2-Pak
IRFS3107PBF 75V, 210A, 3.3 mOhm, 160 nC Qg, D2-Pak
IRFB4110PBF 100V, 73A, 4.5 mOhm, 150 nC Qg, TO-220FP
IRFS4010PBF 100V, 180A, 4.5 mOhm, 150 nC Qg, D2-Pak
IRFB4127PBF 200V, 76A, 19 mOhm, 110 nC, TO-220
IRFS4127PBF 200V, 76A, 19 mOhm, 110 nC, D2-Pak
Q1CY08 Q2CY08 Q3CY08
Q4CY08 CY09

ТО-220 – увеличена нагрузочная способность
TO220,D2PAK
and TO262:
Now 120A Package Rating
IRFB3306PBF
IRFB3206PBF
IRFB3307ZPBF
IRFB3207ZPBF
IRFB3077PBF
IRFB4410ZPBF
IRFB4310ZPBF
IRFB4110PBF
TO247:
IRFP3206PBF
IRFP3077PBF
IRFP4110PBF

Силовой SMD корпус D2PAK
IRF2804SBF
Vds Id Rdson
40V 75A 2mOhm
На 0.4mΩ ниже
Rds(on) чем у
D2PAK
Нагрузочная
способность
корпуса в 2 раза
выше D2PAK
IRF2804S-7PPBF
Vds Id Rdson
40V 160A 1.6mOhm
3 Source Pin:
3x20 mil AI wires
5 Source Pins:
4x20 mil AI wires
Double Stitch!!

60-75В MOSFET с высоким качество/цена для UPS и
электропривода с батарейным питанием
IR introduces a new family of 60V and 75V MOSFETs that are targeted for any hard
switched and/or high frequency circuits such as SMPS and UPS. These devices are also
optimized for industrial battery applications such as E-Bike, Scooters, and utility carts.
They utilized IR’s latest Trench silicon technology with superior Rdson to help improve
system efficiency and reliability, while offering the best price/performance combination in
the market.
IR IRFZ44NPBF
IRFR3607 – цена ниже на 40% чем у
IRFR2307Z
ST
Fairchild
AOS
STP45NF06
FQP50N06
AOT462
TO-220
IR
ST
Fairchild
AOS
IR
ST
Fairchild
AOS
IRF1010EPBF
STP80NF55
FQP80N06
AOT460
IRF2807PBF
STP75NF75
FQP74N08A
AOT428
Part V A m?
IRFB3806PBF 60 42 16.2
IRF1018EPBF 60 77 8.4
IRFB3607PBF 75 80 9
Корпуса DPAK, D2PAK, TO-220

Новые MOSFET 60-100В вТО-247
IR introduces a new family of 60V, 75V and 100V MOSFETs in TO-247, further expanding
it’s power MOSFET offering in with of the most rugged and popular power packages on the
market today. IRs latest silicon technology in TO-247 allows for a much higher current rating
than that of standard TO-220 and D2PAK packages. This can help improve system power
densities in SMPS, UPS applications, while also offering high power and thermal cycling
capabilities required by some Industrial Battery applications.
TO-247
Part V A mΩ
IRFP3306PBF 60 160 4.2
IRFP3206PBF 60 210 3
IRFP3077PBF 75 210 3.3
IRFP4410ZPBF 100 97 9
IRFP4310ZPBF 100 127 6
IRFP4110PBF 100 168 4.6
Vishay IRFP048PBF Vishay IRFP054PBF
Vishay IRFP064PBF
ST STB160N75F3 IXYS IXTH200N075T
NXP PSMN009-100W
Vishay IRFP2410 IXYS IXFH80N10Q
Vishay IRFP2410 ST STY140NS10

MOSFET В ТО-247 c эталонными характеристиками
BVdss Rds(on) Qg Id @ 25C
Типономинал
(B) (мОм) (нК) (A)
Корпус
IRFP4004PBF 40 1.7 220 195* ТО-247АС
IRFP4368PBF 75 1.85 380 195* ТО-247АС
IRFP4468PBF 100 2.6 360 195* ТО-247АС
IRFP4568PBF 150 5.9 151 171 ТО-247АС
IRFP4668PBF 200 9.7 161 130 ТО-247АС
* ограничено корпусом

Сравнение с аналогами
Manufacture
r
Part
VBRDS
S (V)
RDS(on)
Max 10V
(mOhms)
ID @ TC
= 25C
(A)
Qg Typ
(nC)
Qgd Typ
(nC)
Rth(JC)
(K/W)
IR IRFP4004PBF 40 1.7 350 220.0 75.0 0.40 380
Power
Dissipatio
n @ TC =
25C (W)
Rds IR /
Rds
comp.
Fairchild FDA8440 40 2.1 100 345 74 0.49 306 0.81
IR IRFP4368PBF 75 1.8 350 380.0 105.0 0.29 520
Fairchild FD038AN08A1 75 3.5 80 125 0.33 450 0.51
STM STW220NF75 75 4.4 120 500 135 0.3 460 0.4
IR IRFP4468PBF 100 2.6 290 360.0 89.0 0.29 520
Fairchild HUF75652G3 100 8 75 475 74 0.29 515 0.32
IXYS IXTR200N10P 100 8 120 235 0.5 300 0.32
IXYS IXFX250N10P 100 6.5 250 205 0.12 1250 0.31
IR IRFP4568PBF 150 5.9 171 151.0 55.0 0.29 517
Fairchild HUF75882G3 150 16 75 480 66 0.3 500 0.4
IXYS IXTQ120N15P 150 16 120 150 0.25 600 0.35
IXYS IXTQ150N15P 150 13 150 190 0.21 714 0.45
IR IRFP4668PBF 200 9.7 130 161.0 52.0 0.29 520
Fairchild FQA65N20 200 32 65 200 75 0.4 310 0.3
IXYS IXTH96N20 200 24 96 145 0.25 600 0.4
IXYS IXTQ120N20 200 22 120 152 0.21 713 0.44

Trench IGBT Gen 6-7 600-1200B

600V Trench IGBT для высокоэффективных UPS и
инверторов солнечных батарей

Пример DC/AC: 500W Solar Inverter
• 600V Trench IGBT IRGB4056DPBF
• Medium can 100V DirectFET, IRF6644
• Self-oscilating full bridge bus converter IR2086S
• 600V half bridge driver IC: IRS2184S
•Частота ШИМ 20кГц

Gen 6 Trench IGBT

У 600V Trench IGBTs ниже Vce(on) и Ets
IRG4PC40UDPBF
IRGP4063DPBF
Technology Planar Punch Through Trench Field Stop
Vce(on), Ic=20A, 150 o C 1.7 Volts 1.6 Volts
Ets, Ic=20A, 150 o C 1.8 mJ 1.2 mJ
Qg 100nC 95nC
Tj max 150 o C 175 o C
Reverse Bias SOA Not Square Square

Ниже потери мощности при использовании Trench IGBTs
Total Power Dissipation vs Ouput RMS Current
Fsw = 20kHz, Rth(s-a) = 5 o C/W, Tamb = 30 o C Full Bridge DC to AC Inverter
40 W
35 W
Total Power Dissipation (Watts)
30 W
25 W
20 W
15 W
10 W
5 W
30%
IRG4BC20UDPBF, Planar IGBT
IRGB4056DPBF, Trench IGBT
0 W
4 A 6 A 8 A 10 A 12 A 14 A
Output RMS current (Amps)

Ниже температура радиатора при применении Trench IGBT
Heatsink Temperature vs Ouput RMS Current
Fsw = 20kHz, Rth(s-a) = 5 o C/W, Tamb = 30 o C Full Bridge DC to AC Inverter
150 oC
140 oC
Heatsink Temperature (oC)
130 oC
120 oC
110 oC
100 oC
60%
IRG4BC20UDPBF, Planar IGBT
IRGB4056DPBF, Trench IGBT
90 oC
80 oC
4 A 6 A 8 A 10 A 12 A 14 A
Output RMS current (Amps)

Прямоугольная зона безопасной работы
Trench IGBT (square)
Planar IGBT (not square)

Performance Comparison of 600V IGBTs

Gen 7 1200V Trench IGBT

Gen 7 IGBT (Trench DS)
•Trench Depletion-Stop Technology
•1200V
•Наилучшая эффективность среди
IGBT (низкое Vce(on), Ets)
•T jmax of 175ºC
•Версии К (tsc 10мкс) и U
•Прямоугольная RBSOA

Рекомендуемые приложения
Gen 7 1200V K-type (Tsc >10usec)
•Industrial Motor Drive
•Industrial Modules
•HEV
Gen 7 1200V U-type (no Tsc guarantee)
•Induction Heating
•UPS
•Solar Inverter
•Welding
•Industrial Modules

Эффективность применения в приводе
Typical RMS Current Density (AA) vs. Switching Frequency
T SINK = 100C, T JMAX = 150C, MI = 1, PF = 1, SPWM
1.80
RMS Current Density, A/mm 2
1.60
1.40
1.20
1.00
0.80
1.30
1.2
IRG7PH30KD
IKW8T120
1.14
0.60
0 2 4 6 8 10 12 14 16 18 20 22
Switching Frequency, kHz

Key Parameters at 150 o C
FGA25N120FTD
IKW25N120T2
IRG7PH42UDPBF
Technology FS Trench FS Trench FS Trench
Vceon at 10A
Vceon at 20A
1.5V 1.5V
1.40 V
1.8V 1.8V
1.75 V
Eoff at 10A, 600V 700 uJ 800 uJ
550 uJ
Eoff at 20A, 600V 1150 uJ 1700 uJ
950 uJ
Rth (j-c)
0.4 o C/W 0.43 o C/W 0.38 o C/W
From Rth(j-c) values, all devices appear to be similar dimensions

Output Current Vs Frequency
Assumptions: Tj=150 o C, Tsink=100 o C, Rthc-s = 2 o C/W
25
Output Current (A)
20
15
10
IRG7PH42UDPBF
FGA25N120FTD
IKW25N120T2
5
0
1 10 100
Switching Frequency (kHz)
IRG4PH42UD gives the highest output power

Competitive Analysis – Induction Heating
• Peak Current:
– IGBT = 60A,
– Diode = 30A
• Current Pulse Width:
– IGBT = 20us,
– Diode = 10us
• Fsw = 25KHz
Estimated Infineon and
Fairchild Psw using same
datasheets ratio from Infineon
R1 version (R2 18% less Eoff
than R1) and FGA25N120ANTD
(FTD 8% less Eoff than ANTD)

GaN-on-Si – революционная платформа
для создания ключевых приборов новых
поколений

Сравнение потенциалов технологий
Темп снижения потерь в новых поколениях МОП-транзисторов
быстро снижается с каждым годом. В ближайшие годы разработка
новых поколений станет экономически нецелесособразной

Сравнение платформ
SiC
Gan on Si
Диаметр пластины 4' 4'/6'/8'/12'
Цена пластины 100 1
Совместимость с CMOS
процессами нет да
Потенциал Gan-On-Si
•Диапазон напряжений 20-1200В
•Снижение R*AA для 100-300В в10-
100раз, 600-1200Вдо1000раз
•Снижение R*Qg 33-300%
•Повышение плотности энергии в 3-4
раза в течение 5лет
•Работа на частотах ШИМ до 50МГц