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RRAM - An Emerging Non-volatile Memory Technology

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CF growth by inserting nano-crystalionatom + + +Cu(Ag) TEi) anodic metal atoms (M) oxidizemetal ions (M z- ) according to thereaction (M → M z- + ze - )ZrO 2voxidedii) the M z- cations migrate towardthe cathode under the high electricfield, more M z- gathered around NC;reducedPt BEMetal NCiii) M z- deoxidize back to M andelectrodeposits on the surface of theinert electrode according to thereversed reaction (M z- + ze - → M)‣ Enhancing and converging the electrical field by metal NC‣ Accelerating metal ions velocity‣ Controlling filament growth location by metal NCQi Liu, et al., EDL 31(11) 1299Feb.10th, 2012, at TIT

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