RRAM - An Emerging Non-volatile Memory Technology

More documents

Recommendations

Info

EDS analysisi) a→b corresponds to the Ag electrode region;ii) b→c corresponds to the CF electrode region;iii)c→d corresponds to the Cu NC region.Qi Liu, et al., ACS Nano. 4, 6162 (2010)Feb.10th, 2012, at TIT
Element mappingCu-KZr-LAg-LThe component of nano-bridge in the Ag/ZrO 2 /Cu NC/Pt device ismainly Ag elements ! Qi Liu, et al., ACS Nano. 4, 6162 (2010)Feb.10th, 2012, at TIT
Page 3 and 4: Flash MemoryConcepts proposed by D.
Page 5: Outline‣ An overview of Non-volat
Page 9: Challenges for RRAM2. Which RRAM ma
Page 12: RRAM research in IMECAS• Switchin
Page 16 and 17: Conductive Filaments MechanismThe r
Page 18 and 19: How many of CF?Step:1mV/stepStep:10
Page 20 and 21: Multiple Filaments MechanismThe ste
Page 22 and 23: Dynamic process of CF formation and
Page 24 and 25: Dynamic process of CF formationIn o
Page 26 and 27: CF growth by inserting nano-crystal
Page 28 and 29: TE/ZrO2/Cu NC/Ptclear Si wafertherm
Page 32 and 33: Outline‣ An overview of Non-volat
Page 34: Thanks for yourattention!Feb.10th,

RRAM - An Emerging Non-volatile Memory Technology

Create successful ePaper yourself

Delete template?

Save as template?