RRAM - An Emerging Non-volatile Memory Technology

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CF growth by inserting nano-crystalionatom + + +Cu(Ag) TEi) anodic metal atoms (M) oxidizemetal ions (M z- ) according to thereaction (M → M z- + ze - )ZrO 2voxidedii) the M z- cations migrate towardthe cathode under the high electricfield, more M z- gathered around NC;reducedPt BEMetal NCiii) M z- deoxidize back to M andelectrodeposits on the surface of theinert electrode according to thereversed reaction (M z- + ze - → M)‣ Enhancing and converging the electrical field by metal NC‣ Accelerating metal ions velocity‣ Controlling filament growth location by metal NCQi Liu, et al., EDL 31(11) 1299Feb.10th, 2012, at TIT
Electric field simulation‣The maximum intensity of E at the NC tip‣The intensity of E rapidly decaysoutside the column region above the NClocation‣The maximum intensity of Eexponentially increase with the NC sizeQi Liu, et al., EDL 31(11) 1299Feb.10th, 2012, at TIT
Page 3 and 4: Flash MemoryConcepts proposed by D.
Page 5: Outline‣ An overview of Non-volat
Page 9: Challenges for RRAM2. Which RRAM ma
Page 12: RRAM research in IMECAS• Switchin
Page 16 and 17: Conductive Filaments MechanismThe r
Page 18 and 19: How many of CF?Step:1mV/stepStep:10
Page 20 and 21: Multiple Filaments MechanismThe ste
Page 22 and 23: Dynamic process of CF formation and
Page 24 and 25: Dynamic process of CF formationIn o
Page 28 and 29: TE/ZrO2/Cu NC/Ptclear Si wafertherm
Page 30 and 31: EDS analysisi) a→b corresponds to
Page 32 and 33: Outline‣ An overview of Non-volat
Page 34: Thanks for yourattention!Feb.10th,

RRAM - An Emerging Non-volatile Memory Technology

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