RRAM - An Emerging Non-volatile Memory Technology
RRAM - An Emerging Non-volatile Memory Technology
RRAM - An Emerging Non-volatile Memory Technology
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Summary Temperature-dependent switching characteristics reveals thatmicroscopic nature of the metallic conductive is Cu element inCu/BTMO:Cu/Pt based <strong>RRAM</strong>. Multiple resistance steps in Cu/BTMO:Cu/Pt device was observed,it is due to successively established parallel filaments between thebottom and top electrodes during Set process. We have indentified the metallic nature of CF in Cu/ZrOx/Ptdevice and observed the existence of multi-CFs Oxide-ElectrolytebasedReRAM. Adding a metal NC layer, CFs grow easily along the direction ofmetal NC, which reduces the randomness of the CF formationand rupture processes.Feb.10th, 2012, at TIT
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