RRAM - An Emerging Non-volatile Memory Technology

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TE/ZrO2/Cu NC/Ptclear Si waferthermal SiO 2 layerdeposit BE electrode materialsdeposit Cu thin film (3nm)TECu NC ZrO 2Pt electrodeTiSiO 2deposit ZrO 2 film (40 nm)rapid thermal annealing (600 o C, 5s, N 2 )defining TE electrode shapedeposit TE electrode materialslift-off to forming TE electrodeelectrical testQi Liu, et al., EDL 31(11) 1299Feb.10th, 2012, at TIT
Ag/ZrO 2 /Cu NC/PtTEM images CFTiPtPtCu NCCu NC~20 nmCFAgAuAgThe nano-bridge region is directly connected to a protrusion of thePt BE, and the protrusion is a Cu NC based on elements analysis byEDS!Qi Liu, et al., ACS Nano. 4, 6162 (2010)Feb.10th, 2012, at TIT
Page 3 and 4: Flash MemoryConcepts proposed by D.
Page 5: Outline‣ An overview of Non-volat
Page 9: Challenges for RRAM2. Which RRAM ma
Page 12: RRAM research in IMECAS• Switchin
Page 16 and 17: Conductive Filaments MechanismThe r
Page 18 and 19: How many of CF?Step:1mV/stepStep:10
Page 20 and 21: Multiple Filaments MechanismThe ste
Page 22 and 23: Dynamic process of CF formation and
Page 24 and 25: Dynamic process of CF formationIn o
Page 26 and 27: CF growth by inserting nano-crystal
Page 30 and 31: EDS analysisi) a→b corresponds to
Page 32 and 33: Outline‣ An overview of Non-volat
Page 34: Thanks for yourattention!Feb.10th,

RRAM - An Emerging Non-volatile Memory Technology

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